Top Inventors for class "Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor" |
Rank | Inventor's name | Country | City/State | Last publication | # of patent apps in this class |
1 | Hiroshi Kishi | JP | Akita-Shi | Apr 16, 2020 / 20200115820 - QUARTZ GLASS CRUCIBLE AND MANUFACTURING METHOD THEREOF | 23 |
2 | Toshiaki Sudo | JP | Akita-Shi | Apr 28, 2016 / 20160115625 - METHOD OF MANUFACTURING COMPOSITE CRUCIBLE | 21 |
3 | Makoto Iwai | JP | Kasugai-City | Dec 31, 2020 / 20200411718 - Method of producing substrates including gallium nitride | 14 |
4 | Seiji Sarayama | JP | Miyagi | Jan 26, 2017 / 20170022629 - METHOD FOR PRODUCING GALLIUM NITRIDE CRYSTAL | 14 |
5 | Mark P. D'Evelyn | US | Goleta, CA | Jul 31, 2014 / 20140213001 - WHITE LIGHT DEVICES USING NON-POLAR OR SEMIPOLAR GALLIUM CONTAINING MATERIALS AND PHOSPHORS | 13 |
6 | Tadao Hashimoto | US | Santa Barbara, CA | Nov 18, 2021 / 20210355598 - LOW-DISLOCATION BULK GAN CRYSTAL AND METHOD OF FABRICATING SAME | 13 |
7 | Katsuhiro Imai | JP | Nagoya-City | Jan 14, 2021 / 20210013366 - GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE, FUNCTIONAL ELEMENT, AND METHOD OF PRODUCING GROUP 13 ELEMENT NITRIDE LAYER | 11 |
8 | Hirokazu Iwata | JP | Miyagi | Sep 05, 2019 / 20190273360 - REFLECTOR, SURFACE EMITTING LASER, METHOD FOR MANUFACTURING REFLECTOR, AND METHOD FOR MANUFACTURING SURFACE EMITTING LASER | 11 |
9 | Yuusuke Sato | JP | Tokyo | May 12, 2016 / 20160133457 - VAPOR PHASE GROWTH APPARATUS, STORAGE CONTAINER, AND VAPOR PHASE GROWTH METHOD | 10 |
10 | Peter L. Kellerman | US | Essex, MA | Apr 16, 2020 / 20200115819 - APPARATUS FOR FORMING CRYSTALLINE SHEET FROM A MELT | 10 |
11 | Shinsuke Fujiwara | JP | Itami-Shi | Jun 01, 2017 / 20170152609 - METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE | 10 |
12 | Tsutomu Hori | JP | Itami-Shi | Jun 01, 2017 / 20170152609 - METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE | 9 |
13 | Scott Reitsma | US | Shrewsbury, MA | Mar 27, 2014 / 20140083349 - REMOVABLE THERMAL CONTROL FOR RIBBON CRYSTAL PULLING FURNACES | 9 |
14 | Yusuke Mori | JP | Suita-City | Oct 27, 2011 / 20110259261 - REACTION VESSEL FOR GROWING SINGLE CRYSTAL AND METHOD FOR GROWING SINGLE CRYSTAL | 9 |
15 | Minoru Kanda | JP | Akita-Shi | Nov 26, 2015 / 20150337456 - METHOD OF MANUFACTURING COMPOSITE CRUCIBLE AND METHOD OF MANUFACTURING SILICON CRYSTAL | 9 |
16 | Edward Letts | US | Buellton, CA | Jul 13, 2017 / 20170198407 - METHODS FOR PRODUCING IMPROVED CRYSTALLINITY GROUP III-NITRIDE CRYSTALS FROM INITIAL GROUP III-NITRIDE SEED BY AMMONOTHERMAL GROWTH | 9 |
17 | Ken Kitahara | JP | Akita-Shi | Apr 28, 2016 / 20160115625 - METHOD OF MANUFACTURING COMPOSITE CRUCIBLE | 8 |
18 | Shuji Nakamura | US | Santa Barbara, CA | Jul 28, 2022 / 20220239068 - III-NITRIDE-BASED VERTICAL CAVITY SURFACE EMITTING LASER (VCSEL) CONFIGURATIONS | 8 |
19 | Fumio Kawamura | JP | Suita-City | Jan 21, 2010 / 20100012020 - METHOD FOR MANUFACTURING NITRIDE SINGLE CRYSTAL | 8 |
20 | Nathan G. Stoddard | US | Gettysburg, PA | Mar 26, 2015 / 20150087105 - Methods and Apparatuses for Manufacturing Geometric Multicrystalline Cast Silicon and Geometric Multicrystalline Cast Silicon Bodies for Photovoltaics | 8 |
21 | James S. Speck | US | Goleta, CA | Dec 24, 2015 / 20150372456 - HIGH POWER BLUE-VIOLET III-NITRIDE SEMIPOLAR LASER DIODES | 8 |
22 | Shou-Shan Fan | CN | Beijing | Aug 18, 2022 / 20220260829 - METHOD FOR DESIGNING NONSYMMETRIC FREEFORM SURFACE OPTICAL SYSTEM | 8 |
23 | Takanao Shimodaira | JP | Nagoya-City | Sep 14, 2017 / 20170263810 - Method for Separating Group 13 Element Nitride Layer, and Composite Substrate | 8 |
24 | Keiichi Takanashi | JP | Tokyo | Jun 17, 2021 / 20210181106 - METHOD AND APPARATUS FOR MEASURING TRANSMITTANCE OF QUARTZ CRUCIBLE | 8 |
25 | Yusuke Mori | JP | Osaka | Jan 06, 2022 / 20220002904 - METHOD OF MANUFACTURING GROUP III NITRIDE CRYSTAL | 8 |
26 | Takatomo Sasaki | JP | Suita-City | Jan 21, 2010 / 20100012020 - METHOD FOR MANUFACTURING NITRIDE SINGLE CRYSTAL | 8 |
27 | Hironori Daikoku | JP | Susono-Shi | Jul 13, 2017 / 20170198408 - SIC SINGLE CRYSTAL PRODUCTION METHOD AND PRODUCTION APPARATUS | 8 |
28 | Troy Marlar | US | Knoxville, TN | Apr 30, 2015 / 20150115074 - Device For Separating Materials and a Method For Accomplishing the Same | 7 |
29 | Ryoji Hoshi | JP | Nishishirakawa | Apr 17, 2014 / 20140103492 - SILICON WAFER AND METHOD FOR PRODUCING THE SAME | 7 |
30 | Shinichi Kawazoe | JP | Nagasaki | Jun 16, 2011 / 20110140241 - PROCESSES FOR PRODUCTION OF SILICON INGOT, SILICON WAFER AND EPITAXIAL WAFER , AND SILICON INGOT | 7 |
31 | Shuhei Higashihara | JP | Nagoya-City | Dec 31, 2020 / 20200411718 - Method of producing substrates including gallium nitride | 7 |
32 | Ken Hamada | JP | Tokyo | Jun 30, 2016 / 20160186359 - METHOD OF MANUFACTURING SINGLE CRYSTAL | 7 |
33 | Chantal Arena | US | Mesa, AZ | Nov 11, 2021 / 20210346530 - STERILIZATION TOOL FOR DENTAL AND MEDICAL TOOLS AND RELATED SYSTEMS AND METHODS | 7 |
34 | Fukuo Ogawa | JP | Nagasaki | Jun 16, 2011 / 20110140241 - PROCESSES FOR PRODUCTION OF SILICON INGOT, SILICON WAFER AND EPITAXIAL WAFER , AND SILICON INGOT | 7 |
35 | Toshimichi Kubota | JP | Nagasaki | Jun 16, 2011 / 20110140241 - PROCESSES FOR PRODUCTION OF SILICON INGOT, SILICON WAFER AND EPITAXIAL WAFER , AND SILICON INGOT | 7 |
36 | Atsushi Iwasaki | JP | Echizen | Sep 14, 2017 / 20170260646 - METHOD FOR PRODUCING SINGLE CRYSTAL | 7 |
37 | Yasuhito Narushima | JP | Nagasaki | Jun 16, 2011 / 20110140241 - PROCESSES FOR PRODUCTION OF SILICON INGOT, SILICON WAFER AND EPITAXIAL WAFER , AND SILICON INGOT | 7 |
38 | Shiow-Jeng Lew | TW | Taipei | Aug 27, 2009 / 20090211520 - Crystal-growing furnace system with emergent pressure-release arrangement | 7 |
39 | Yang Wei | CN | Beijing | Oct 28, 2021 / 20210336564 - NANOFIBER ACTUATOR AND METHOD FOR MAKING THE SAME | 7 |
40 | Naho Mizuhara | JP | Itami-Shi | May 28, 2015 / 20150147674 - SOLID ELECTROLYTE LAMINATE, METHOD FOR MANUFACTURING SOLID ELECTROLYTE LAMINATE, AND FUEL CELL | 6 |
41 | Michimasa Miyanaga | JP | Itami-Shi | Dec 04, 2014 / 20140357067 - METHOD OF MANUFACTURING NITRIDE SUBSTRATE, AND NITRIDE SUBSTRATE | 6 |
42 | Koji Uematsu | JP | Itami-Shi | Dec 31, 2015 / 20150380496 - GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, LAMINATED GROUP III NITRIDE COMPOSITE SUBSTRATE, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME | 6 |
43 | Brant Quinton | US | Knoxville, TN | May 21, 2015 / 20150136992 - Rare-Earth Oxyorthosilicates With Improved Growth Stability And Scintillation Characteristics | 6 |
44 | Hideaki Nakahata | JP | Itami-Shi | Aug 13, 2015 / 20150228825 - SEMICONDUCTOR DEVICE, OPTICAL SENSOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD | 6 |
45 | Benno Orschel | US | Salem, OR | Jul 26, 2012 / 20120186512 - PROCEDURE FOR IN-SITU DETERMINATION OF THERMAL GRADIENTS AT THE CRYSTAL GROWTH FRONT | 6 |
46 | Kunihiko Suzuki | JP | Shizuoka | Sep 26, 2013 / 20130247816 - FILM-FORMING APPARATUS FOR THE FORMATION OF SILICON CARBIDE AND FILM-FORMING METHOD FOR THE FORMATION OF SILICON CARBIDE | 6 |
47 | Hidemitsu Sakamoto | JP | Susono-Shi | Oct 22, 2015 / 20150299900 - METHOD FOR PRODUCING SIC SINGLE CRYSTAL | 6 |
48 | Kazuhiko Kusunoki | JP | Chiyoda-Ku | Jan 15, 2015 / 20150013590 - SEED CRYSTAL HOLDING SHAFT FOR USE IN SINGLE CRYSTAL PRODUCTION DEVICE, AND METHOD FOR PRODUCING SINGLE CRYSTAL | 6 |
49 | Hur-Lon Lin | TW | Taipei | Aug 27, 2009 / 20090211520 - Crystal-growing furnace system with emergent pressure-release arrangement | 6 |
50 | Shinichi Mitani | JP | Shizuoka | Feb 14, 2013 / 20130036968 - FILM-FORMING APPARATUS AND METHOD | 6 |
51 | Katsunori Danno | JP | Susono-Shi | Jun 09, 2016 / 20160160384 - METHOD FOR PRODUCING SiC SUBSTRATE | 6 |
52 | Shigeru Yamagata | JP | Narashino | Apr 30, 2015 / 20150114284 - SILICA CONTAINER FOR PULLING SINGLE CRYSTAL SILICON AND METHOD FOR MANUFACTURING THE SAME | 6 |
53 | Roger F. Clark | US | Knoxville, MD | Jan 15, 2015 / 20150013591 - METHODS AND APPARATUSES FOR MANUFACTURING CAST SILICON FROM SEED CRYSTALS | 6 |
54 | Kazuhito Kamei | JP | Chiyoda-Ku | May 01, 2014 / 20140116325 - PRODUCTION APPARATUS OF SiC SINGLE CRYSTAL BY SOLUTION GROWTH METHOD, METHOD FOR PRODUCING SiC SINGLE CRYSTAL USING THE PRODUCTION APPARATUS, AND CRUCIBLE USED IN THE PRODUCTION APPARATUS | 6 |
55 | Donald J.k. Olgado | US | Palo Alto, CA | Apr 11, 2013 / 20130087093 - APPARATUS AND METHOD FOR HVPE PROCESSING USING A PLASMA | 6 |
56 | Masanori Ikari | US | Santa Barbara, CA | Jul 13, 2017 / 20170198407 - METHODS FOR PRODUCING IMPROVED CRYSTALLINITY GROUP III-NITRIDE CRYSTALS FROM INITIAL GROUP III-NITRIDE SEED BY AMMONOTHERMAL GROWTH | 6 |
57 | Hideki Kato | JP | Gifu | Feb 09, 2012 / 20120034415 - CARBON FIBER STRUCTURE AND METHOD FOR MANUFACTURING THE SAME | 5 |
58 | Mehrdad M. Moslehi | US | Los Altos, CA | Nov 17, 2016 / 20160336465 - HIGH-EFFICIENCY PHOTOVOLTAIC BACK-CONTACT SOLAR CELL STRUCTURES AND MANUFACTURING METHODS | 5 |
59 | Edward Semenas | US | Allentown, PA | Jan 06, 2022 / 20220002906 - SiC Single Crystal Sublimation Growth Apparatus | 5 |
60 | Masahiro Yasuda | JP | Gifu | Jan 19, 2012 / 20120014862 - GRAPHITE MATERIAL | 5 |
61 | Nobuyoshi Yashiro | JP | Chiyoda-Ku | May 01, 2014 / 20140116325 - PRODUCTION APPARATUS OF SiC SINGLE CRYSTAL BY SOLUTION GROWTH METHOD, METHOD FOR PRODUCING SiC SINGLE CRYSTAL USING THE PRODUCTION APPARATUS, AND CRUCIBLE USED IN THE PRODUCTION APPARATUS | 5 |
62 | Ronald Thomas Bertram, Jr. | US | Mesa, AZ | May 26, 2016 / 20160145767 - DEPOSITION SYSTEMS HAVING ACCESS GATES AT DESIRABLE LOCATIONS, AND RELATED METHODS | 5 |
63 | Glen A. Slack | US | Scotia, NY | Oct 17, 2019 / 20190316272 - ALUMINUM NITRIDE BULK CRYSTALS HAVING HIGH TRANSPARENCY TO ULTRAVIOLET LIGHT AND METHODS OF FORMING THEM | 5 |
64 | Richard L. Wallace | US | Acton, MA | Aug 07, 2014 / 20140220171 - APPARATI FOR FABRICATING THIN SEMICONDUCTOR BODIES FROM MOLTEN MATERIAL | 5 |
65 | Mark S. Andreaco | US | Knoxville, TN | Nov 04, 2021 / 20210340442 - Passivation of Metal Halide Scintillators | 5 |
66 | Susumu Sonokawa | JP | Nishishirakawa | Apr 17, 2014 / 20140103492 - SILICON WAFER AND METHOD FOR PRODUCING THE SAME | 5 |
67 | Wilfried Von Ammon | AT | Hochburg | Aug 01, 2013 / 20130192518 - METHOD FOR PRODUCING A SINGLE CRYSTAL OF SEMICONDUCTOR MATERIAL | 5 |
68 | Masaki Morikawa | JP | Akita | Jul 08, 2010 / 20100170298 - Vitreous silica crucible manufacturing apparatus | 5 |
69 | Robert T. Bondokov | US | Watervliet, NY | Mar 10, 2022 / 20220074072 - IMPURITY CONTROL DURING FORMATION OF ALUMINUM NITRIDE CRYSTALS AND THERMAL TREATMENT OF ALUMINUM NITRIDE CRYSTALS | 5 |
70 | Max Robinson | GB | Durham | Jun 09, 2016 / 20160160385 - APPARATUS AND PROCESS FOR CRYSTAL GROWTH | 5 |
71 | John Walter Locher | US | Amherst, NH | Oct 23, 2014 / 20140311402 - Sapphire Sheets and Apparatus and Method for Producing Sapphire Sheets with Angled Heat Shields | 5 |
72 | Hironobu Hirata | JP | Shizuoka | Mar 08, 2012 / 20120055406 - Vapor Phase Deposition Apparatus and Support Table | 5 |
73 | Issei Satoh | JP | Itami-Shi | Apr 30, 2015 / 20150118830 - Method of Manufacturing GaN-Based Film and Composite Substrate Used Therefor | 5 |
74 | Shiro Yamazaki | JP | Aichi-Ken | Aug 30, 2012 / 20120217510 - LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITROGEN COMPOUND | 5 |
75 | Fumio Kawamura | JP | Osaka | Jan 30, 2014 / 20140030549 - GROUP III ELEMENT NITRIDE CRYSTAL PRODUCING METHOD AND GROUP-III ELEMENT NITRIDE CRYSTAL | 5 |
76 | David Harvey | US | Westford, MA | Mar 27, 2014 / 20140083349 - REMOVABLE THERMAL CONTROL FOR RIBBON CRYSTAL PULLING FURNACES | 5 |
77 | Takatomo Sasaki | JP | Osaka | Jul 05, 2012 / 20120168695 - GROUP-III ELEMENT NITRIDE CRYSTAL PRODUCING METHOD AND GROUP-III ELEMENT NITRIDE CRYSTAL | 5 |
78 | Dong Geun Shin | KR | Seoul | Aug 06, 2015 / 20150218005 - SILICON CARBIDE POWDER AND PREPARATION METHOD THEREFOR | 5 |
79 | Hitoshi Noguchi | JP | Annaka | Sep 19, 2013 / 20130239880 - BASE MATERIAL FOR GROWING SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING SINGLE CRYSTAL DIAMOND SUBSTRATE | 5 |
80 | Motohisa Kado | JP | Susono-Shi | Jul 09, 2015 / 20150191848 - APPARATUS FOR PRODUCING SIC SINGLE CRYSTAL BY SOLUTION GROWTH METHOD, AND METHOD FOR PRODUCING SIC SINGLE CRYSTAL BY USING THE PRODUCTION APPARATUS AND CRUCIBLE USED IN THE PRODUCTION APPARATUS | 5 |
81 | Haruhide Shikano | JP | Gifu | Feb 09, 2012 / 20120034415 - CARBON FIBER STRUCTURE AND METHOD FOR MANUFACTURING THE SAME | 5 |
82 | Keiichi Takanashi | JP | Saga-Shi | Mar 31, 2022 / 20220098757 - METHOD AND APPARATUS FOR MANUFACTURING DEFECT-FREE MONOCRYSTALLINE SILICON CRYSTAL | 5 |
83 | Dawei Sun | US | Nashua, NH | Feb 12, 2015 / 20150040818 - METHOD FOR ACHIEVING SUSTAINED ANISOTROPIC CRYSTAL GROWTH ON THE SURFACE OF A MELT | 5 |
84 | Keisuke Tanizaki | JP | Itami-Shi | Jun 26, 2014 / 20140175616 - Composite of III-Nitride Crystal on Laterally Stacked Substrates | 5 |
85 | Eriko Suzuki | JP | Akita-Shi | Dec 24, 2015 / 20150368828 - METHOD OF MANUFACTURING VITREOUS SILICA CRUCIBLE AND METHOD OF MANUFACTURING SILICON INGOT | 5 |
86 | Koichi Suzuki | JP | Akita-Shi | Nov 26, 2015 / 20150337456 - METHOD OF MANUFACTURING COMPOSITE CRUCIBLE AND METHOD OF MANUFACTURING SILICON CRYSTAL | 5 |
87 | Takeshi Fujita | JP | Akita-Shi | Nov 26, 2015 / 20150337456 - METHOD OF MANUFACTURING COMPOSITE CRUCIBLE AND METHOD OF MANUFACTURING SILICON CRYSTAL | 5 |
88 | Leo J. Schowalter | US | Latham, NY | Mar 10, 2022 / 20220074072 - IMPURITY CONTROL DURING FORMATION OF ALUMINUM NITRIDE CRYSTALS AND THERMAL TREATMENT OF ALUMINUM NITRIDE CRYSTALS | 5 |
89 | Christine Richardson | US | Northborough, MA | Mar 27, 2014 / 20140083349 - REMOVABLE THERMAL CONTROL FOR RIBBON CRYSTAL PULLING FURNACES | 5 |
90 | David L. Bender | US | Thousand Oaks, CA | Oct 10, 2013 / 20130263772 - Method and apparatus for controlling melt temperature in a Czochralski grower | 5 |
91 | Hyon-Jong Cho | KR | Gumi-Si | Aug 18, 2011 / 20110197809 - SINGLE CRYSTAL COOLER AND SINGLE CRYSTAL GROWER INCLUDING THE SAME | 4 |
92 | Kenneth E. Morgan | US | Castleton, NY | Oct 17, 2019 / 20190316272 - ALUMINUM NITRIDE BULK CRYSTALS HAVING HIGH TRANSPARENCY TO ULTRAVIOLET LIGHT AND METHODS OF FORMING THEM | 4 |
93 | Christiaan Werkhoven | US | Gilbert, AZ | Feb 13, 2014 / 20140041584 - ABATEMENT OF REACTION GASES FROM GALLIUM NITRIDE DEPOSITION | 4 |
94 | Shunsaku Ueta | JP | Itami-Shi | Jun 01, 2017 / 20170152609 - METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE | 4 |
95 | Shiro Yamasaki | JP | Nishikasugai-Gun | Dec 03, 2009 / 20090293805 - Melt composition for gallium nitride single crystal growth and method for growing gallium nitride single crystal | 4 |
96 | Masaru Sato | JP | Akita-Shi | Jan 17, 2013 / 20130014474 - CLOSURE FOR SILICA GLASS CRUCIBLE, SILCA GLASS CRUCIBLE AND METHOD OF HANDLING THE SAME | 4 |
97 | Takuma Yoshioka | JP | Akita-Shi | Apr 28, 2016 / 20160115625 - METHOD OF MANUFACTURING COMPOSITE CRUCIBLE | 4 |
98 | Masataka Hourai | JP | Tokyo | Nov 22, 2012 / 20120293793 - METHOD OF EVALUATING SILICON WAFER AND METHOD OF MANUFACTURING SILICON WAFER | 4 |
99 | Tomohiro Kawase | JP | Itami-Shi | May 19, 2016 / 20160138186 - SILICON CARBIDE SINGLE-CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURING THE SAME | 4 |
100 | Joel Kearns | US | Springfield, VA | Jul 26, 2012 / 20120186512 - PROCEDURE FOR IN-SITU DETERMINATION OF THERMAL GRADIENTS AT THE CRYSTAL GROWTH FRONT | 4 |