Patent application number | Description | Published |
20080239847 | SEMI-SHARED SENSE AMPLIFIER AND GLOBAL READ LINE ARCHITECTURE - A memory includes a global read line and a plurality of banks. For each bank, the memory includes a sense amplifier. A discharge circuit discharges the global read line if any one of a plurality of the sense amplifiers is enabled and is outputting a signal having a first digital logic value onto an input lead of the discharge circuit. In this way, the sense amplifiers share the discharge circuit. In one example, the memory includes a pair of differential read lines that are precharged to begin a read operation. After precharging, if either of two sense amplifiers is enabled and outputting the first digital logic value, then a first discharge circuit discharges a first of the global read lines. If either of two sense amplifiers is enabled and outputting the second digital logic value, then a second discharge circuit discharges a second of the global read lines. | 10-02-2008 |
20080285367 | METHOD AND APPARATUS FOR REDUCING LEAKAGE CURRENT IN MEMORY ARRAYS - Techniques for reducing leakage current in memory arrays are described. A memory array has multiple rows and multiple columns of memory cells. Bit lines are coupled to the columns of memory cells, and word lines are coupled to the rows of memory cells. The bit lines have disconnected paths to a power supply and float during a sleep mode for the memory array. The bit lines may be coupled to (i) precharge circuits used to precharge the bit lines prior to each read or write operation, (ii) pass transistors used to couple the bit lines to sense amplifiers for read operations, and (iii) pull-up transistors in drivers used to drive the bit lines for write operations. The precharge circuits, pass transistors, and pull-up transistors are turned off during the sleep mode. The word lines are set to a predetermined logic level to disconnect the memory cells from the bit lines during the sleep mode. | 11-20-2008 |
20080298142 | CLOCK AND CONTROL SIGNAL GENERATION FOR HIGH PERFORMANCE MEMORY DEVICES - Techniques for generating clock and control signals to achieve good performance for read and write operations in memory devices are described. In one design, a clock and control signal generator within a memory device includes first and second clock generators, first and second control signal generators, and a reset circuit. The first clock generator generates a first clock signal used for read and write operations. The second clock generator generates a second clock signal used for write operations. The reset circuit generates at least one reset signal for the first and second clock generators. The reset signal(s) may have timing determined based on loading due to dummy cells. The first control signal generator generates control signals used for read and write operations based on the first clock signal. The second control signal generator generates control signals used for write operations based on the second clock signal. | 12-04-2008 |
20080298143 | MEMORY DEVICE WITH DELAY TRACKING FOR IMPROVED TIMING MARGIN - A memory device that can provide good timing margins for read and write operations is described. In one design, the memory device includes a memory array, a timing control circuit, and an address decoder. The memory array includes memory cells for storing data and dummy cells to mimic the memory cells. The timing control circuit generates at least one control signal used for writing data to the memory cells and having timing determined based on the dummy cells. The timing control circuit may generate a pulse on an internal clock signal with a driver having configurable drive strength and a programmable delay unit. The pulse duration may be set to obtain the desired write timing margin. The address decoder activates word lines for rows of memory cells for a sufficiently long duration, based on the internal clock signal, to ensure reliable writing of data to the memory cells. | 12-04-2008 |
20090174453 | System and Method of Conditional Control of Latch Circuit Devices - A circuit device includes a first input to receive a reset control signal and a second input coupled to an output of a latch. The circuit device also includes a logic circuit adapted to conditionally reset the latch based on a state of the output in response to receiving the reset control signal. | 07-09-2009 |
20090231934 | Advanced Bit Line Tracking in High Performance Memory Compilers - A method accurately tracks a bit line maturing time for compiler memory. The method includes enabling a dummy word line in response to an internal clock signal. The dummy word line is enabled prior to enabling a real word line. A dummy bit line is matured in response to enabling of the dummy word line. The dummy bit line matures at a same rate that a real bit line matures. The method also includes disabling the dummy word line in response to determining a threshold voltage differential based on monitoring maturation of the dummy bit line. The real word line is enabled a predefined delay after enabling of the dummy word line. Similarly, the word line is disabled the predefined delay after disabling of the dummy word line. In response to disabling the dummy word line, a sense enable signal is generated. | 09-17-2009 |
20100046280 | SRAM Yield Enhancement by Read Margin Improvement - A sense margin is improved for a read path in a memory array. Embodiments improve the sense margin by using gates with a lower threshold voltage in a read column multiplexer. A cross coupled keeper can further improve the sense margin by increasing a voltage level on a bit line storing a high value, thereby counteracting leakage on the “high” bit line. | 02-25-2010 |
20100061161 | Self Reset Clock Buffer In Memory Devices - A memory device includes a clock buffer circuit. The clock buffer circuit includes a cross-coupled logic circuit. The cross-coupled logic circuit has at least two logic gates in which an output of at least one of the logic gates is coupled to an input of at least one of the logic gates. The cross-coupled logic circuit is coupled to an input for accepting a clock signal. The memory device also includes a clock driver operable to generate a clock signal from the output of the cross-coupled logic circuit. A feedback loop from the clock signal to the cross-coupled logic circuit controls the cross-coupled logic circuit. A buffer circuit including a tri-state inverter is coupled to the clock signal to maintain the clock signal while avoiding contention with the clock generator. The memory device is enabled by a chip select signal. | 03-11-2010 |
20100142300 | Semiconductor Memory Device And Methods Of Performing A Stress Test On The Semiconductor Memory Device - A semiconductor memory device and method of performing a stress test on a semiconductor memory device are provided. In an example, the semiconductor memory device includes a multiplexer arrangement configured to switch a timing signal that controls an internal timing of the semiconductor memory device from an internal signal to an external signal during a stress mode, and further includes one or more word lines of the semiconductor memory device receiving a stress voltage during the stress mode, a duration of the stress mode based upon the external signal. In another example, the semiconductor memory device includes one or more word lines configured to receive a stress voltage during a stress mode, and a precharge circuit configured to provide a precharge voltage to a bit line of the semiconductor memory device during the stress mode. | 06-10-2010 |
20100146320 | Memory Access Time Measurement Using Phase Detector - Methods and systems for determining a memory access time are provided. A first phase skew is measured between a first clock signal used by a memory and a second clock signal used as a reference clock signal. Then, a second phase skew is measured between a delayed version of the first clock signal output by the memory when the memory completes a given read operation and the second clock signal. The memory access time is determined based on the first and second phase skews. | 06-10-2010 |
20100226191 | Leakage Reduction in Memory Devices - A memory device includes a core array that includes memory cells. The memory device also includes a headswitch coupled to the core array and a positive supply voltage. The headswitch reduces leakage current from the core array by disconnecting the core array from the positive supply voltage. Additionally, head switches are added for pre-charge devices to further reduce leakage current. | 09-09-2010 |
20100238756 | Self Reset Clock Buffer In Memory Devices - A memory device includes a clock buffer circuit. The clock buffer circuit includes a cross-coupled logic circuit. The cross-coupled logic circuit has at least two logic gates in which an output of at least one of the logic gates is coupled to an input of at least one of the logic gates. The cross-coupled logic circuit is coupled to an input for accepting a clock signal. The memory device also includes a clock driver operable to generate a clock signal from the output of the cross-coupled logic circuit. A feedback loop from the clock signal to the cross-coupled logic circuit controls the cross-coupled logic circuit. A buffer circuit including a tri-state inverter is coupled to the clock signal to maintain the clock signal while avoiding contention with the clock generator. The memory device is enabled by a chip select signal. | 09-23-2010 |
20120068774 | Amplitude Control for Oscillator - An amplitude control circuit includes a pair of peak detectors. The pair of peak detectors are responsive to a voltage reference generator. The amplitude control circuit is configured to be responsive to an oscillating signal of a crystal oscillator and configured to generate a control signal to control an amplitude of the oscillating signal. | 03-22-2012 |
20120082174 | Sense Amplifier with Selectively Powered Inverter - A sense amplifier includes a first inverter responsive to a first output of a latch. The first inverter is powered by a sense enable signal. The sense amplifier also includes a second inverter responsive to a second output of the latch. The second inverter is also powered by the sense enable signal. | 04-05-2012 |
20130187708 | Wide Input Bit-Rate, Power Efficient PWM Decoder - A pulse width modulated (PWM) signal is received and, over a time interval of the PWM signal, a first count is incremented when the PWM signal is at a first level, and a second count is incremented when the PWM signal is at a second level. At the end of time interval the first count is compared to the second count and, based on the comparison, a decoded bit is generated. Optionally, incrementing the first count is by enabling a first oscillator that increments a first counter, and incrementing the second count is by enabling a second oscillator that increments a second counter. | 07-25-2013 |
20140321227 | FREQUENCY POWER MANAGER - A method and an apparatus are provided. The apparatus is a hardware module that controls a power mode of a plurality of modules. The apparatus receives an indication of a desired operational frequency. Based on the received indication, the apparatus determines to switch from a first power mode associated with a first set of modules to a second power mode corresponding to the desired operational frequency and associated with a second set of modules. The apparatus enables modules in the second set of modules that are unassociated with the first power mode, stops traffic through the plurality of modules upon expiration of a time period after enabling the modules in the second set of modules that are unassociated with the first power mode, routes traffic through the second set of modules, and disables modules in the first set of modules that are unassociated with the second power mode. | 10-30-2014 |