Patent application number | Description | Published |
20130136921 | METHOD OF GENERATING HIGH PURITY BISMUTH OXIDE - A method for forming and protecting high quality bismuth oxide films comprises depositing a transparent thin film on a substrate comprising one of Si, alkali metals, or alkaline earth metals. The transparent thin film is stable at room temperature and at higher temperatures and serves as a diffusion barrier for the diffusion of impurities from the substrate into the bismuth oxide. Reactive sputtering, sputtering from a compound target, or reactive evaporation are used to deposit a bismuth oxide film above the diffusion barrier. | 05-30-2013 |
20130189526 | Heat Stable SnAl and SnMg Based Dielectrics - A transparent dielectric composition comprising tin, oxygen and one of aluminum or magnesium with preferably higher than 15% by weight of aluminum or magnesium offers improved thermal stability over tin oxide with respect to appearance and optical properties under high temperature processes. For example, upon a heat treatment at temperatures higher than 500 C, changes in color and index of refraction of the present transparent dielectric composition are noticeably less than those of tin oxide films of comparable thickness. The transparent dielectric composition can be used in high transmittance, low emissivity coated panels, providing thermal stability so that there are no significant changes in the coating optical and structural properties, such as visible transmission, IR reflectance, microscopic morphological properties, color appearance, and haze characteristics, of the as-coated and heated treated products. | 07-25-2013 |
20130260508 | Methods for forming resistive switching memory elements - Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication. | 10-03-2013 |
20130334491 | Methods for Forming Nickel Oxide Films for Use With Resistive Switching Memory Devices - Methods for forming a NiO film on a substrate for use with a resistive switching memory device are presenting including: preparing a nickel ion solution; receiving the substrate, where the substrate includes a bottom electrode, the bottom electrode utilized as a cathode; forming a Ni(OH) | 12-19-2013 |
20140166472 | Method and apparatus for temperature control to improve low emissivity coatings - A method for making low emissivity panels, comprising cooling the article before or during sputter depositing a coating layer, such as a seed layer or an infrared reflective layer. The cooling process can improve the quality of the infrared reflective layer, which can lead to better transmittance in visible regime, block more heat transfer from the low emissivity panels, and potentially can reduce the requirements for other layers, so that the overall performance, such as durability, could be improved. | 06-19-2014 |
20140168759 | Methods and apparatuses for patterned low emissivity panels - A method for making low emissivity panels, comprising forming a patterned layer on a transparent substrate. The patterned layers can offer different color schemes or different decorative appearance styles for the coated panels, or can offer gradable thermal efficiency through the patterned layers. | 06-19-2014 |
20140170338 | pvd chamber and process for over-coating layer to improve emissivity for low emissivity coating - A method for making low emissivity panels, including control the ion characteristics, such as ion energy, ion density and ion to neutral ratio, in a sputter deposition process of a layer deposited on a thin conductive silver layer. The ion control can prevent or minimize degrading the quality of the conductive silver layer, which can lead to better transmittance in visible regime, block more heat transfer from the low emissivity panels, and potentially can reduce the requirements for other layers, so that the overall performance, such as durability, could be improved. | 06-19-2014 |
20140170413 | Silver Based Conductive Layer For Flexible Electronics - Methods for making conducting stacks includes forming a doped or alloyed silver layer sandwiched between two layers of transparent conductive oxide such as indium tin oxide (ITO). The doped silver or silver alloy layer can be thin, such as between 1.5 to 20 nm and thus can be transparent. The doped silver or silver alloy can provide improved ductility property, allowing the conductive stack to be bendable. The transparent conductive oxide layers can also be thin, allowing the conductive stack can have improved ductility property. | 06-19-2014 |
20140170421 | Low-E Panel with Improved Barrier Layer and Method for Forming the Same - Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A reflective layer is formed above the transparent substrate. A titanium-yttrium oxide layer is deposited above the transparent substrate, or above the transparent substrate and the reflective layer, which may enhance optical performance. | 06-19-2014 |
20140170422 | Low emissivity coating with optimal base layer material and layer stack - A method for making low emissivity panels, including forming a base layer to promote a seed layer for a conductive silver layer. The base layer can be an amorphous layer or a nanocrystalline layer, which can facilitate zinc oxide seed layer growth, together with smoother surface and improved thermal stability. The base layer can include doped tin oxide, for example, tin oxide doped with Al, Ga, In, Mg, Ca, Sr, Sb, Bi, Ti, V, Y, Zr, Nb, Hf, Ta, or any combination thereof. The doped tin oxide base layer can influence the growth of (002) crystallographic orientation in zinc oxide, which in turn serves as a seed layer template for silver (111). | 06-19-2014 |
20140170434 | Two Layer Ag Process For Low Emissivity Coatings - Two layer silver process comprising a silver layer deposited on a doped silver layer can improve the adhesion of the silver layer on a substrate, minimizing agglomeration to provide a high quality silver layer. The doped silver layer can comprise silver and a doping element that has lower enthalpy of formation with oxide than that of silver, leading to better bonding with oxygen in the substrate. | 06-19-2014 |
20140177042 | Novel silver barrier materials for low-emissivity applications - A method for making low emissivity panels, including control the composition of a barrier layer formed on a thin conductive silver layer. The barrier structure can include an alloy of a first element having high oxygen affinity with a second element having low oxygen affinity. The first element can include Ta, Nb, Zr, Hf, Mn, Y, Si, and Ti, and the second element can include Ru, Ni, Co, Mo, and W, which can have low oxygen affinity property. The alloy barrier layer can reduce optical absorption in the visible range, can provide color-neutral product, and can improve adhesion to the silver layer. | 06-26-2014 |
20140185034 | Method to Extend Single Wavelength Ellipsometer to Obtain Spectra of Refractive Index - Methods are provided to use data obtained from a single wavelength ellipsometer to determine the refractive index of materials as a function of wavelength for thin conductive films. The methods may be used to calculate the refractive index spectrum as a function of wavelength for thin films of metals, and conductive materials such as conductive metal nitrides or conductive metal oxides. | 07-03-2014 |
20140186598 | Base-layer consisting of two materials layer with extreme high/low index in low-e coating to improve the neutral color and transmittance performance - Low emissivity coated panels can be fabricated using a base layer having a low refractive index layer on a high refractive index layer. The low refractive index layer can have refractive index less than 1.5, and can include Mg F | 07-03-2014 |
20140231744 | Methods for forming resistive switching memory elements - Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication. | 08-21-2014 |
20140264155 | High-selectivity wet patterning of source-drain electrodes over taos for a bce device structure - Methods and formulations for the selective etching of etch stop layers deposited above metal-based semiconductor layers used in the manufacture of TFT-based display devices are presented. The formulations are based on an alkaline solution. Methods and formulations for the selective etching of molybdenum-based and/or copper-based source/drain electrode layers deposited above metal-based semiconductor layers used in the manufacture of TFT-based display devices are presented. The formulations are based on an alkaline solution. | 09-18-2014 |
20140268317 | High Solar Gain Low-E Panel and Method for Forming the Same - Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A reflective layer is formed above the transparent substrate. An over-coating layer is formed above the reflective layer. The over-coating layer includes first, second, and third sub-layers. The second sub-layer is between the first and third sub-layers, and the first and third sub-layers include the same material | 09-18-2014 |
20140272335 | Low-E Glazing Performance by Seed Structure Optimization - A bi-layer seed layer can exhibit good seed property for an infrared reflective layer, together with improved thermal stability. The bi-layer seed layer can include a thin zinc oxide layer having a desired crystallographic orientation for a silver infrared reflective layer disposed on a bottom layer having a desired thermal stability. The thermal stable layer can include aluminum, magnesium, or bismuth doped tin oxide (AlSnO, MgSnO, or BiSnO), which can have better thermal stability than zinc oxide but poorer lattice matching for serving as a seed layer template for silver (111). | 09-18-2014 |
20140272354 | Method to generate high LSG low-emissivity coating with same color after heat treatment - Low emissivity panels can include a separation layer of Zn | 09-18-2014 |
20140272390 | Low-E Panel with Improved Barrier Layer Process Window and Method for Forming the Same - Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A reflective layer is formed above the transparent substrate. A barrier layer is formed above the reflective layer. A nitride-containing layer is formed above the barrier layer. The nitride-containing layer has a thickness that is 1 nm or less. A over-coating layer is formed above the nitride-containing layer. The over-coating layer includes a different material than that of the nitride-containing layer. | 09-18-2014 |
20140272395 | LOW-EMISSIVITY GLASS INCLUDING SPACER LAYERS COMPATIBLE WITH HEAT TREATMENT - Disclosed herein are systems, methods, and apparatus for forming low emissivity panels that may include a first reflective layer, a second reflective layer, and a spacer layer disposed between the first reflective layer and the second reflective layer. In some embodiments, the spacer layer may have a thickness of between about 20 nm and 90 nm. The spacer layer may include a bi-metal oxide that may include tin, and may further include one of zinc, aluminum, or magnesium. The spacer layer may have a substantially amorphous structure. Moreover, the spacer layer may have a substantially uniform composition throughout the thickness of the spacer layer. The low emissivity panel may be configured to have a color change as determined by Rg ΔE (i.e. as determined on the glass side) that is less than about 1.7 in response to an application of a heat treatment to the low emissivity panel. | 09-18-2014 |
20140272455 | Titanium nickel niobium alloy barrier for low-emissivity coatings - A method for making low emissivity panels, including control the composition of a barrier layer formed on a thin conductive silver layer. The barrier structure can include a ternary alloy of titanium, nickel and niobium, which showed improvements in overall performance than those from binary barrier results. The percentage of titanium can be between 5 and 15 wt %. The percentage of nickel can be between 30 and 50 wt %. The percentage of niobium can be between 40 and 60 wt %. | 09-18-2014 |
20140287254 | Heat Stable SnAl and SnMg Based Dielectrics - A transparent dielectric composition comprising tin, oxygen and one of aluminum or magnesium with preferably higher than 15% by weight of aluminum or magnesium offers improved thermal stability over tin oxide with respect to appearance and optical properties under high temperature processes. For example, upon a heat treatment at temperatures higher than 500 C, changes in color and index of refraction of the present transparent dielectric composition are noticeably less than those of tin oxide films of comparable thickness. The transparent dielectric composition can be used in high transmittance, low emissivity coated panels, providing thermal stability so that there are no significant changes in the coating optical and structural properties, such as visible transmission, IR reflectance, microscopic morphological properties, color appearance, and haze characteristics, of the as-coated and heated treated products. | 09-25-2014 |