| Patent application number | Description | Published |
|---|
| 20100090261 | MAGNETIC STACK WITH LAMINATED LAYER - A magnetic stack with a multilayer free layer having a switchable magnetization orientation, the free layer comprising a first ferromagnetic portion and a second ferromagnetic portion with an electrically conducting non-magnetic intermediate layer between the first portion and the second portion. The magnetic stack also includes a first ferromagnetic reference layer having a pinned magnetization orientation, a first non-magnetic spacer layer between the free layer and the first reference layer, a second ferromagnetic reference layer having a pinned magnetization orientation, and a second non-magnetic spacer layer between the free layer and the second reference layer. | 04-15-2010 |
| 20100090301 | MAGNETIC STACK WITH OXIDE TO REDUCE SWITCHING CURRENT - A magnetic stack having a ferromagnetic free layer, a metal oxide layer that is antiferromagnetic at a first temperature and non-magnetic at a second temperature higher than the first temperature, a ferromagnetic pinned reference layer, and a non-magnetic spacer layer between the free layer and the reference layer. During a writing process, the metal oxide layer is non-magnetic. For magnetic memory cells, such as magnetic tunnel junction cells, the metal oxide layer provides reduced switching currents. | 04-15-2010 |
| 20100091564 | MAGNETIC STACK HAVING REDUCED SWITCHING CURRENT - A magnetic stack having a ferromagnetic free layer, a ferromagnetic pinned reference layer, a non-magnetic spacer layer between the free layer and the reference layer, and a variable layer proximate the free layer. The variable layer is antiferromagnetic at a first temperature and paramagnetic at a second temperature higher than the first temperature. During a writing process, the variable layer is paramagnetic. For magnetic memory cells, such as magnetic tunnel junction cells, the variable layer provides reduced switching currents. | 04-15-2010 |
| 20100254174 | Resistive Sense Memory with Complementary Programmable Recording Layers - A resistive sense memory and method of writing data thereto. In accordance with various embodiments, the resistive sense memory comprises a first reference layer with a fixed magnetic orientation in a selected direction coupled to a first tunneling barrier, a second reference layer with a fixed magnetic orientation in the selected direction coupled to a second tunneling barrier, and a recording structure disposed between the first and second tunneling barriers comprising first and second free layers. A selected logic state is written to the resistive sense memory by applying a programming input to impart complementary first and second programmed magnetic orientations to the respective first and second free layers. | 10-07-2010 |
| 20100271870 | MAGNETIC STACK HAVING ASSIST LAYER - A magnetic memory cell having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation and switchable by spin torque. The cell includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than about 500 Oe. The assist layer may have in-plane or out-of-plane anisotropy. | 10-28-2010 |
| 20110006385 | MAGNETIC STACK HAVING REFERENCE LAYERS WITH ORTHOGONAL MAGNETIZATION ORIENTATION DIRECTIONS - A magnetic cell includes a ferromagnetic free layer having a free magnetization orientation direction and a first ferromagnetic pinned reference layer having a first reference magnetization orientation direction that is parallel or anti-parallel to the free magnetization orientation direction. A first oxide barrier layer is between the ferromagnetic free layer and the first ferromagnetic pinned reference layer. The magnetic cell further includes a second ferromagnetic pinned reference layer having a second reference magnetization orientation direction that is orthogonal to the first reference magnetization orientation direction. The ferromagnetic free layer is between the first ferromagnetic pinned reference layer and the second ferromagnetic pinned reference layer. | 01-13-2011 |
| 20110058412 | MAGNETIC STACK HAVING ASSIST LAYER - A magnetic tunnel junction having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation, the ferromagnetic free layer switchable by spin torque. The magnetic tunnel junction includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than 700 Oe and positioned to apply a magnetic field on the free layer. | 03-10-2011 |
| 20110090627 | COMPUTER HOUSING - A multipart computer housing is described. The multipart computer housing includes at least a clutch barrel. The clutch barrel encloses a connector assembly, the connector assembly providing support for a lid. The clutch barrel is configured such that a junction formed by the clutch barrel and a top layer of the lid is not visible to a user when the computer housing is on a horizontal surface. | 04-21-2011 |
| 20110090632 | COMPUTER HOUSING - A multipart computer housing is described. The multipart computer housing includes at least a structural support layer and a body. The body includes at least an outer layer formed of lightweight flexible material and an inner layer attached to the outer layer. The inner layer is connected to the support layer forming a load path between the inner layer and the structural support layer. A load applied to the multipart computer housing is transferred by way of the load path to the support layer without substantially affecting the outer layer. | 04-21-2011 |
| 20110092081 | MAGNETIC CONNECTOR HAVING A UNITARY HOUSING - Power cables that include plug housings having an improved appearance as well as employ a halogen-free cable while providing adequate fire resistance. One example provides a power cable having cable plug with a substantially unitary body. Another example provides a power cable that is formed using halogen-free materials. To provide adequate fire protection, a strain relief formed using multiple materials is used. | 04-21-2011 |
| 20110104945 | SUPER-THIN USB CONNECTOR RECEPTACLE HOUSINGS HAVING REDUCED-WEAR FINGER CONTACTS - Structures, methods, and apparatus that provide connector receptacles that have a reduced tendency to scratch and otherwise mar connector inserts, have an aesthetically-pleasing appearance, have an improved tactile response when inserts are inserted, or are very thin or have a low profile. Various examples reduce scratches and wear by utilizing domes, cylinders, balls, or other structures as finger contacts in a connector receptacle. Another example provides aesthetically-pleasing connector receptacle enclosures by forming receptacle enclosures using the same type of material, or material having the same or similar color or texture, as is used for enclosing the electronic device that includes the receptacle. Another example provides an aesthetically-pleasing receptacle enclosure by forming receptacle enclosures that are, in part or in whole, contiguous or formed with the housing. Another example provides a super-thin connector receptacle by removing fingers and portions of a shell along one or more sides. | 05-05-2011 |
