Patent application number | Description | Published |
20140102985 | REVERSE OSMOSIS WATER-ON-WATER CONTROL VALVE - Described are water-on-water valves for use in reverse osmosis filtration systems. The water-on-water valves are regulated by the pressure in a product line, which contains fluid from a product line of the filter module and/or the product side of a water-on-water storage tank. Exemplary valves are shuttle valves that are regulated by the pressure downstream of the product side of a reverse osmosis filter module. The valves may comprise a piston within a housing, and an end of the piston may have an enlarged diameter relative to the maximum diameter of the remainder of the piston. | 04-17-2014 |
20140251824 | RECHARGEABLE ELECTROCHEMICAL CELLS - Provided are electrochemical devices that are rechargeable, where the regeneration techniques are based on a batchwise application of current or current density to the cells, where there are a service mode where no current or current density is applied and a recharge mode where a current or current density is applied. Electrochemical and EDI systems according to the embodiments herein are suitable for deionization and/or purification of typical municipal tap quality water in applications where demand for purified, low-TDS water is intermittent. Such operations avoid the use of chemical additions for regeneration purposes. In addition the cells provided herein are amenable to small footprints for consumer and commercial applications such as: dishwashers, washing machines, coffee and espresso makers, ice makers, steam tables, car wash water sources, and steamers. | 09-11-2014 |
20150083666 | REVERSE OSMOSIS WATER-ON-WATER CONTROL VALVE - Described are water-on-water valves for use in reverse osmosis filtration systems. The water-on-water valves are regulated by the pressure in a product line, which contains fluid from a product line of the filter module and/or the product side of a water-on-water storage tank. Exemplary valves are shuttle valves that are regulated by the pressure downstream of the product side of a reverse osmosis filter module. The valves may comprise a piston within a housing, and an end of the piston may have an enlarged diameter relative to the maximum diameter of the remainder of the piston. The body of the piston may have sections of differing diameters, where the smaller diameter sections form flow channels, or the body may a diameter that is substantially the same along its length in conjunction with gratings and flow channels. | 03-26-2015 |
Patent application number | Description | Published |
20140118529 | Fourier Ptychographic Imaging Systems, Devices, and Methods - Systems, devices, and methods of Fourier ptychographic imaging by computationally reconstructing a high-resolution image by iteratively updating overlapping regions of variably-illuminated, low-resolution intensity images in Fourier space. | 05-01-2014 |
20140126691 | Fourier Ptychographic X-ray Imaging Systems, Devices, and Methods - Methods, systems, and devices of Fourier ptychographic X-ray imaging by capturing a plurality of variably-illuminated, low-resolution intensity X-ray images of a specimen and computationally reconstructing a high-resolution X-ray image of the specimen by iteratively updating overlapping regions in Fourier space with the variably-illuminated, low-resolution intensity X-ray images. | 05-08-2014 |
20140133702 | Methods for Rapid Distinction between Debris and Growing Cells - Methods of rapid distinction between growing cells and debris, which determine a time-lapse movie of specimen images, track features of each entity, and categorize each entity as growing cells or debris. | 05-15-2014 |
20150036038 | APERTURE SCANNING FOURIER PTYCHOGRAPHIC IMAGING - Certain aspects pertain to aperture-scanning Fourier ptychographic imaging devices comprising an aperture scanner that can generate an aperture at different locations at an intermediate plane of an optical arrangement, and a detector that can acquire lower resolution intensity images for different aperture locations, and wherein a higher resolution complex image may be constructed by iteratively updating regions in Fourier space with the acquired lower resolution images. | 02-05-2015 |
20150054979 | VARIABLE-ILLUMINATION FOURIER PTYCHOGRAPHIC IMAGING DEVICES, SYSTEMS, AND METHODS - Certain aspects pertain to Fourier ptychographic imaging systems, devices, and methods such as, for example, high NA Fourier ptychographic imaging systems and reflective-mode NA Fourier ptychographic imaging systems. | 02-26-2015 |
20150160450 | EMBEDDED PUPIL FUNCTION RECOVERY FOR FOURIER PTYCHOGRAPHIC IMAGING DEVICES - Certain aspects pertain to Fourier ptychographic imaging systems, devices, and methods that implement an embedded pupil function recovery | 06-11-2015 |
Patent application number | Description | Published |
20090001525 | HIGH-K DUAL DIELECTRIC STACK - The present invention discloses a method including: providing a Group III-V component semiconductor material; forming a first layer over a surface of the Group III-V component semiconductor material, the first layer to unpin a Fermi level at the surface; forming a second layer over the first layer, the second layer for scaling an equivalent oxide thickness (EOT); and annealing the first layer before or after forming the second layer to remove bulk trap defects in the first layer. | 01-01-2009 |
20090004882 | Method of forming high-k dual dielectric stack - The present invention discloses a method including: providing a Group III-V component semiconductor material; forming a first layer over a surface of the Group III-V component semiconductor material, the first layer to unpin a Fermi level at the surface; forming a second layer over the first layer, the second layer for scaling an equivalent oxide thickness (EOT); and annealing the first layer before or after forming the second layer to remove bulk trap defects in the first layer. | 01-01-2009 |
20110001107 | HOLLOW GST STRUCTURE WITH DIELECTRIC FILL - A memory cell structure, including a substrate having a via therein bound at first and second ends thereof by electrodes. The via is coated on side surfaces thereof with GST material defining a core that is hollow or at least partially filled with material, e.g., germanium or dielectric material. One or more of such memory cell structures may be integrated in a phase change memory device. The memory cell structure can be fabricated in a substrate containing a via closed at one end thereof with a bottom electrode, by conformally coating GST material on sidewall surface of the via and surface of the bottom electrode enclosing the via, to form an open core volume bounded by the GST material, optionally at least partially filling the open core volume with germanium or dielectric material, annealing the GST material film, and forming a top electrode at an upper portion of the via. | 01-06-2011 |
20110124182 | SYSTEM FOR THE DELIVERY OF GERMANIUM-BASED PRECURSOR - A supply of a germanium precursor such as germanium n-butylamidinate is provided in close proximity to a microelectronic device substrate to be contacted therewith for deposition of germanium-containing material on the substrate. Specific arrangements are described, including tray and reservoir structures from which solid, liquid, suspended or dissolved germanium precursor can be volatilized for transport to the substrate surface together with other precursors, carrier gases, co-reactants or the like. In such manner, the germanium precursor can be activated independently of the activation of other precursors, within the deposition chamber, to achieve highly efficient formation of germanium-containing material on the substrate, e.g., a GST film of a phase change memory device. | 05-26-2011 |
20110180905 | GeSbTe MATERIAL INCLUDING SUPERFLOW LAYER(S), AND USE OF Ge TO PREVENT INTERACTION OF Te FROM SbXTeY AND GeXTeY RESULTING IN HIGH Te CONTENT AND FILM CRYSTALLINITY - A multilayer film stack containing germanium, antimony and tellurium that can be annealed to form a GST product material of homogeneous and smooth character, wherein at least one antimony-containing layer is isolated from a tellurium-containing layer by an intervening germanium layer, and the multilayer film stack comprises at least two intervening germanium layers. The multilayer film stack can be formed by vapor deposition techniques such as chemical vapor deposition or atomic layer deposition. The annealable multilayer film stack can be formed in high aspect ratio vias to form phase change memory devices of superior character with respect to the stoichiometric and morphological characteristics of the GST product material. | 07-28-2011 |
20110260132 | HIGH CONCENTRATION NITROGEN-CONTAINING GERMANIUM TELLURIDE BASED MEMORY DEVICES AND PROCESSES OF MAKING - A PCM device has the composition GexTeyNzAm deposited onto a substrate, where x is about 40% to about 60%, y is about 30% to about 49%, and z is about 5% to about 20% and more preferably about 5% to about 40%. The component represented as A is optional and representative of an element of Sb, Sn, In, Ga, or Zn, and m is up to about 15%. The composition is in the form of a film, and the nitrogen allows for the substantially conformal deposition of the film onto the substrate. A CVD process for depositing the PCM comprises delivering a Ge-based precursor and a Te-based precursor in vapor form to a CVD chamber, heating and pressurizing the chamber, and depositing the film onto a substrate. In making a phase change device using this process, the film is annealed and polished. | 10-27-2011 |
20120115315 | LOW TEMPERATURE GST PROCESS - A deposition process to form a conformal phase change material film on the surface of a substrate to produce a memory device wafer comprises providing a substrate to a chamber of a deposition system; providing an activation region; introducing one or more precursors into the chamber upstream of the substrate; optionally introducing one or more co-reactants upstream of the substrate; activating the one or more precursors; heating the substrate; and depositing the phase change material film on the substrate from the one or more precursors by chemical vapor deposition. The deposited phase change material film comprises Ge | 05-10-2012 |
20130078475 | GERMANIUM ANTIMONY TELLURIDE MATERIALS AND DEVICES INCORPORATING SAME - Germanium antimony telluride materials are described, e.g., material of the formula Ge | 03-28-2013 |
20130112933 | GERMANIUM ANTIMONY TELLURIDE MATERIALS AND DEVICES INCORPORATING SAME - A chalcogenide alloy composition, having an atomic composition comprising from 34 to 45 Ge, from 2 to 16% Sb, from 48 to 55% Te, from 3 to 15% carbon and from 1 to 10% nitrogen, wherein all atomic percentages of all components of the film total to 100 atomic %. Material of such composition is useful to form phase change films, e.g., as conformally coated on a phase change memory device substrate to fabricate a phase change random access memory cell. | 05-09-2013 |
20130284999 | PHASE CHANGE MEMORY STRUCTURE COMPRISING PHASE CHANGE ALLOY CENTER-FILLED WITH DIELECTRIC MATERIAL - A phase change memory structure, including a substrate having a cavity extending from a surface of the substrate into an interior region thereof, wherein the cavity is bounded by side wall surface, wherein the cavity is coated on the side wall surface with a film of phase change memory material defining a core that is at least partially filled with dielectric material such as alumina. Such phase change memory structure can be fabricated in a substrate containing a cavity closed at one end thereof with a bottom electrode, by a method including: conformally coating sidewall surface of the cavity and surface of the bottom electrode closing the cavity, with a phase change memory material film, to form an open core volume bounded by the phase change memory material film; at least partially filling the open core volume with alumina or other dielectric material; and forming a top electrode at an upper portion of the cavity. | 10-31-2013 |
20140106549 | LOW TEMPERATURE GST PROCESS - A deposition process to form a conformal phase change material film on the surface of a substrate to produce a memory device wafer comprises providing a substrate to a chamber of a deposition system; providing an activation region; introducing one or more precursors into the chamber upstream of the substrate; optionally introducing one or more co-reactants upstream of the substrate; activating the one or more precursors; heating the substrate; and depositing the phase change material film on the substrate from the one or more precursors by chemical vapor deposition. The deposited phase change material film comprises Ge | 04-17-2014 |
20150280115 | DOUBLE SELF-ALIGNED PHASE CHANGE MEMORY DEVICE STRUCTURE - A double self-aligned phase change memory device structure, comprising transversely spaced-apart facing phase change memory film members symmetrically arranged with respect to one another, each of the phase change memory film members at an upper portion thereof being in contact with a separate conductive element, and each of the phase change memory film members being in a range of from 5 nm to 25 nm in thickness. Also described are various methods of making such phase change memory device structure. | 10-01-2015 |
Patent application number | Description | Published |
20080226591 | Compounds for the Treatment of Hepatitis C - The invention encompasses compounds of formula I as well as compositions and methods of using the compounds. The compounds have activity against hepatitis C virus (HCV) and are useful in treating those infected with HCV. | 09-18-2008 |
20080227769 | Compounds for the Treatment of Hepatitis C - The invention encompasses compounds of formula I, including pharmaceutically acceptable salts, as well as compositions and methods of using these compounds. The compounds have activity against hepatitis C virus (HCV) and are useful in treating those infected with HCV. | 09-18-2008 |
20090280083 | Compounds for the Treatment of Hepatitis C - The invention encompasses compounds of formula I as well as compositions and methods of using the compounds. The compounds have activity against hepatitis C virus (HCV) and are useful in treating those infected with HCV. | 11-12-2009 |
20110207749 | Glycine Chroman-6-Sulfonamides for Use as Inhibitors of Diacylglycerol Lipase - The present disclosure is generally directed to compounds that can inhibit DAGLα and/or β activity, compositions comprising such compounds, and methods for inhibiting DAGLα and/or β activity. | 08-25-2011 |
20110207772 | Glycine Chroman-6-Sulfonamides for Use as Inhibitors of Diacylglycerol Lipase - The present disclosure is generally directed to compounds that can inhibit DAGLα and/or β activity, compositions comprising such compounds, and methods for inhibiting DAGLα and/or β activity. | 08-25-2011 |
20150291549 | Compounds Useful as Immunomodulators - The present disclosure generally relates to compounds useful as immunomodulators. Provided herein are compounds, compositions comprising such compounds, and methods of their use. The disclosure further pertains to pharmaceutical compositions comprising at least one compound according to the disclosure that are useful for the treatment of various diseases, including cancer and infectious diseases. | 10-15-2015 |
Patent application number | Description | Published |
20120256490 | Integrated Expandable Grid-Ready Solar Electrical Generator - The generator of the present invention is a complete 220V or 120V AC solar electrical generator that is ready to be directly connected to utility power grid, and more than one of the generators can be connected in parallel to power the grid or to power an isolated electrical system. The generator is integrated with a solar panel that converts solar energy into electrical energy, a Max Power Point Tracking (MPPT) controller that dynamically adjust the output power of the generator to maximize the power of the solar energy, a high efficiency low harmonic digital signal process (DSP) technology based synthetic DC to AC converter that provides 220V or 120V AC power, a synchronizing controller that enables the generator to be connected to the utility power grid or connected to other generators, a power factor compensation unit that reduces the reactive power to improve power quality, a protection unit to prevent the generator from hazardous accident, an energy meter that measures the energy generated by the solar panel and the energy feed into the utility power grid, and a communication unit that sends the parameters such as the voltage, the current, the temperature of the solar panel, the efficiency and related data of MPPT, the timing of AC power and the other information about the generator to the other generators and central controller and receives the information and control commands from the other generators and central controller through AC wire or wirelessly. The generator can be optionally to be equipped with proper battery for some isolated applications. | 10-11-2012 |
20140329458 | SMART ANTENNA - A smart antenna apparatus includes a casing, which supports an omnidirectional antenna array; a plurality of transceivers electrically connected with the antenna array; and a format converter and booster device electrically connected between the plurality of transceivers and a network port, said format converter and booster device comprising a multiplexer/de-multiplexer circuit for encoding plural USB signals from the plurality of transceivers to the network port and for decoding plural USB signals from the network port to the plurality of transceivers | 11-06-2014 |
Patent application number | Description | Published |
20120304811 | GEARBOX MOUNT BRACKET - A bracket for attaching a gearbox to an engine casing has a first portion having a first array of openings for receiving attachments therethrough, the first portion having, on a backside thereof, a first rail for engaging a slot in the engine casing, and a second portion having a second array of openings for receiving attachments therethrough. A hookup for attaching to the gearbox attaches to and in between the first portion and the second portion for diminishing effects of radial rotation between the casing and the gearbox. | 12-06-2012 |
20130193298 | GAS TURBINE ENGINE MOUNTING STRUCTURE WITH SECONDARY LOAD PATH - A connection for mounting an aircraft engine to an aircraft pylon has a plate to be bolted to a portion of an aircraft engine, and a body extending rearwardly from the plate. The body has a main pivot attachment to a balance beam, which has thrust links pivotally attached to the balance beam. A back-up connection is included between the balance beam and the body such that the back-up connection allows normal pivoting movement of the balance beam relative to the body without contact at the back-up connection. | 08-01-2013 |
20130200211 | GAS TURBINE ENGINE MOUNTING STRUCTURE WITH SECONDARY LOAD PATHS - A connection for mounting an aircraft engine to an aircraft pylon includes a plate to be connected to a portion of an engine, and a body that extends rearward from the plate. A back-up connection, including a pin positioned within a slotted hole, is provided between the portion of the engine and the body. When there is a normal connection between the plate and the body, there is clearance between the pin and the slotted hole. | 08-08-2013 |
20130302157 | ADJUSTABLE ENGINE MOUNT - A forward engine mount assembly for a gas turbine engine includes a mount beam having a main body with a fore end and an aft end and a forward shackle assembly supported by the fore end of the mount beam. The forward shackle assembly comprises a first link configured to be connected to a first engine case structure and a second link configured to be connected to a second engine case structure. The first and second links are pivotally attached to each other. | 11-14-2013 |
20140061375 | ASSEMBLY FOR MOUNTING A TURBINE ENGINE TO A PYLON - An assembly for mounting a turbine engine to a pylon includes a mounting beam, a plurality of fasteners, a first mounting linkage and a second mounting linkage. The mounting beam includes a mount beam fitting that extends axially between a first mount beam end and a second mount beam end, and a mount beam flange that extends radially out from the mount beam fitting at the first mount beam end. A first fastener aperture extends radially through the mount beam fitting, and a second fastener aperture extends axially through the mount beam flange. The fasteners connect the mounting beam to the pylon. A first of the fasteners is mated with the first fastener aperture, and a second of the fasteners is mated with the second fastener aperture. The first mounting linkage connects the first mount beam end to a first engine attachment. The second mounting linkage connects the second mount beam end to second engine attachments. | 03-06-2014 |
20140061426 | SECONDARY LOAD PATH FOR GAS TURBINE ENGINE - A waiting link to support an engine on an aircraft includes a body portion including a first body portion opening, a second body portion opening, and a space therebetween. A first bearing is received in the first body portion opening and moveable in a generally vertical direction. A second bearing is received in the second body portion opening. The first and second bearings include a first and second bearing opening, respectively, that receives a first and second attachment member, respectively, that secures the body portion to a first and second structure, respectively. A cam is located in the space. The cam is pivotable between a first position and a second position. The waiting link does not provide a load path when the cam is in the first position, and when a primary load path fails, the waiting link provides the load path when the cam is in the second position. | 03-06-2014 |
Patent application number | Description | Published |
20130102589 | Novel Compound for the Treatment of Hepatitis C - The present invention provides (1aR,12bS)-8-cyclohexyl-11-fluoro-N-((1-methylcyclopropyl)sulfonyl)-1a-((3-methyl-3,8-diazabicyclo[3.2.1]oct-8-yl)carbonyl)-1,1a,2,12b-tetrahydrocyclopropa[d]indolo[2,1-a][2]benzazepine-5-carboxamide (formula I), including pharmaceutically acceptable salts, as well as compositions and methods of using the compound. The compound has activity against hepatitis C virus (HCV) and may be useful in treating those infected with HCV. | 04-25-2013 |
20130237499 | Inhibitors of Human Immunodeficiency Virus Replication - The disclosure generally relates to compounds of formula I, including compositions and methods for treating human immunodeficiency virus (HIV) infection. The disclosure provides novel inhibitors of HIV, pharmaceutical compositions containing such compounds, and methods for using these compounds in the treatment of HIV infection. | 09-12-2013 |
20140051692 | Inhibitors of Human Immunodeficiency Virus Replication - The disclosure generally relates to compounds of formula I, including compositions and methods for treating human immunodeficiency virus (HIV) infection. The disclosure provides novel inhibitors of HIV, pharmaceutical compositions containing such compounds, and methods for using these compounds in the treatment of HIV infection. | 02-20-2014 |
20150232481 | Pyrazolopyrimidine Macrocycles as Inhibitors of Human Immunodeficiency Virus Replication - The disclosure generally relates to compounds of formula I, including compositions and methods for treating human immunodeficiency virus (HIV) infection. The disclosure provides novel inhibitors of HIV, pharmaceutical compositions containing such compounds, and methods for making and using these compounds in the treatment of HIV infection. | 08-20-2015 |