Patent application number | Description | Published |
20100308008 | NANOIMPRINT RESIST, NANOIMPRINT MOLD AND NANOIMPRINT LITHOGRAPHY - A nanoimprint resist includes a hyperbranched polyurethane oligomer (HP), a perfluoropolyether (PFPE), a methylmethacrylate (MMA), and a diluent solvent. A method of a nanoimprint lithography is also provided. | 12-09-2010 |
20100308009 | NANOIMPRINT RESIST, NANOIMPRINT MOLD AND NANOIMPRINT LITHOGRAPHY - A nanoimprint resist that includes a hyperbranched polyurethane oligomer (HP), a perfluoropolyether (PFPE), a methylmethacrylate (MMA), a diluent solvent and a photo initiator. A method of a nanoimprint lithography is also provided. | 12-09-2010 |
20100308512 | NANOIMPRINT RESIST, NANOIMPRINT MOLD AND NANOIMPRINT LITHOGRAPHY - A nanoimprint mold includes a flexible body and a molding layer formed on the flexible body. The molding layer includes a plurality of protrusions and recesses. The molding layer is a polymer material polymerized via a cross linking polymerization of a nanoimprint resist which includes a hyperbranched polyurethane oligomer (HP), a perfluoropolyether (PFPE), a methylmethacrylate (MMA), a diluent solvent and a photo initiator. A method for making the nanoimprint mold is also provided. | 12-09-2010 |
20110195201 | METHOD FOR MAKING A NANO-OPTICAL ANTENNA ARRAY - A method for making a nano-optical antenna array includes following steps. First, an insulative substrate is provided. Second, the insulative substrate is hydrophilicly treated. Third, a monolayer nanosphere array is formed on the insulative substrate. Fourth, a film is deposited on the monolayer nanosphere array. Fifth, the monolayer nanosphere array is removed. | 08-11-2011 |
20110293884 | THREE-DIMENSIONAL NANO-STRUCTURE ARRAY - A three-dimensional nano-structure array includes a substrate and a number of three-dimensional nano-structures. The three-dimensional nano-structures are located on a surface of the substrate. Each of the plurality of three-dimensional nano-structures is a stepped bulge. The stepped bulge includes a first cylinder located on the substrate and a second cylinder located on the first cylinder. | 12-01-2011 |
20110294295 | METHOD FOR MAKING THREE-DIMENSIONAL NANO-STRUCTURE ARRAY - A method for making a three-dimensional nano-structure array includes following steps. First, a substrate is provided. Next, a mask is formed on the substrate. The mask is a monolayer nanosphere array or a film defining a number of holes arranged in an array. The mask is then tailored and simultaneously the substrate is etched by the mask. Lastly, the mask is removed. | 12-01-2011 |
20110297966 | LIGHT EMITTING DIODE - A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are orderly stacked on the substrate. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer. The second semiconductor layer has a plurality of three-dimensional nano-structures. Each of the plurality of three-dimensional nano-structures has a stepped structure. | 12-08-2011 |
20110303640 | NANOIMPRINT METHOD - A nanoimprint method is provided. A substrate and a master stamp are first provided. The substrate has a first resist layer, a transition layer, and a second resist layer orderly formed thereon. The master stamp has a nanopattern defined therein. The second resist layer is a layer of hydrogen silsesquioxane. The nanopattern of the master stamp is then pressed into the second resist layer to form a nanopattern in the second resist layer at normal temperature which is in a range from about 20 centidegrees to about 50 centidegrees. Finally, the nanopattern of the second resist layer is transferred to the substrate. | 12-15-2011 |
20120152353 | SOLAR CELL AND METHOD FOR MAKING THE SAME - A solar cell is provided. The solar cell includes a silicon substrate, a back electrode, a doped silicon layer, and an upper electrode. The silicon substrate includes a lower surface, an upper surface opposite to the lower surface, and a plurality of three-dimensional nano-structures located on the upper surface. Each three-dimensional nano-structure has a stepped structure. The back electrode is located on and electrically connected to the lower surface of the silicon substrate. The doped silicon layer is attached to the three-dimensional nano-structures and the upper surface of the silicon substrate between the three-dimensional nano-structures. The upper electrode is located on at least part of the doped silicon layer. A method for making the solar cell is also provided. | 06-21-2012 |
20120170032 | CARRIER FOR SINGLE MOLECULE DETECTION - A carrier for single molecule detection includes a substrate and a metal layer. The substrate has a surface and includes a number of three-dimensional nano-structures at the surface. The metal layer is located on the surface of the substrate and covers the three-dimensional nano-structures. The enhancement factor of SERS of the carrier is relatively high. | 07-05-2012 |
20120170033 | METHOD FOR DETECTING SINGLE MOLECULE - A method for detecting single molecule includes providing a carrier. The carrier includes a substrate and a metal layer. The substrate has a surface and defines a number of blind holes caved in the substrate from the surface thereof. The metal layer covers the surface of the substrate and inner surfaces of the number of blind holes. Single molecule samples are disposed on the metal layer. The single molecule samples are detected by a Raman Spectroscopy system. | 07-05-2012 |
20120232182 | NANOIMPRINT RESIST - A nanoimprint resist includes a hyperbranched polyurethane oligomer, a perfluoropolyether, a methylmethacrylate, a diluent solvent, and a photo initiator. The hyperbranched polyurethane oligomer can be polymerized by a copolymerization of trimellitic anhydride, ethylene mercaptan, and epoxy acrylic acid. The hyperbranched polyurethane oligomer can also be polymerized by a ring-opening copolymerization epoxy acrylic acid and ethylene glycol. | 09-13-2012 |
20120244245 | NANOIMPRINT RESIST, NANOIMPRINT MOLD AND NANOIMPRINT LITHOGRAPHY - A nanoimprint mold includes a flexible body and a molding layer formed on the flexible body. The molding layer includes a plurality of protrusions and recesses. The molding layer is a polymer material polymerized via a cross linking polymerization of a nanoimprint resist which includes a hyperbranched polyurethane oligomer (HP), a perfluoropolyether (PFPE), a methylmethacrylate (MMA), a diluent solvent and a photo initiator. | 09-27-2012 |
20130087526 | METHOD FOR MAKING THREE-DIMENSIONAL NANO-STRUCTURE ARRAY - A method for making three-dimensional nano-structure array is provided. The method includes following steps. A base is provided. A mask layer is located on the base. The mask layer is patterned, and a number of bar-shaped protruding structures is formed on a surface of the mask layer, a lot is defined between each of two adjacent protruding structures of the number of protruding structures to expose a portion of the base. The exposed portion of the base is etched through the slot so that the each of two adjacent protruding structures begin to slant face to face until they are contacting each other to form a protruding pair. The mask layer is removed. | 04-11-2013 |
20130087528 | NANOIMPRINT RESIST, NANOIMPRINT MOLD AND NANOIMPRINT LITHOGRAPHY - A nanoimprint lithography method includes the following steps. First, a first sacrifice layer, a second sacrifice layer and a nanoimprint resist are formed on a substrate. The nanoimprint resist includes a hyperbranched polyurethane oligomer, a perfluoropolyether; a methylmethacrylate, and a diluent solvent. Second, a master stamp with a first nanopattern formed by a number of projecting portions and gaps is provided, and the first nanopattern is pressed into the nanoimprint resist to form a second nanopattern in the nanoimprint resist. Third, the second nanopattern is transferred to the substrate. | 04-11-2013 |
20130087818 | LIGHT EMITTING DIODE - A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The substrate includes a first surface and a second surface, and the second surface is a light emitting surface of the LED. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked on the first surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on at least one surface of the substrate and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped. | 04-11-2013 |
20130087819 | LIGHT EMITTING DIODE - A light emitting diode is provided. The light emitting diode includes a first semiconductor layer, an active layer and a second semiconductor layer. The active layer is sandwiched between the first semiconductor layer and the second semiconductor layer, and a surface of the second semiconductor layer which is away from the active layer is a light emitting surface. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are formed on the light emitting surface. The number of the three-dimensional nano-structure are aligned side by side, and a cross-section of thee three-dimensional nano-structure is M-shaped. | 04-11-2013 |
20130087820 | LIGHT EMITTING DIODE - A light emitting diode is provided. The light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode and a second electrode. The active layer is sandwiched between the first semiconductor layer and the second semiconductor layer, and a surface of the second semiconductor layer which is away from the active layer is a light extraction surface of the LED. The first electrode is electrically connected with the first semiconductor layer. The second electrode electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are formed on the light extraction surface of LED, the number of the three-dimensional nano-structures are aligned side by side, and a cross section of each three-dimensional nano-structure is M-shaped. | 04-11-2013 |
20130089709 | THREE-DIMENSIONAL NANO-STRUCTURE ARRAY - A three-dimensional nano-structure array includes a substrate and a number of three-dimensional nano-structures. Each three-dimensional nano-structure has a first peak and a second peak aligned side by side. A first groove is defined between the first peak and the second peak. A second groove is defined between the two adjacent three-dimensional nano-structures. A depth of the first groove is lower than that of the second groove. | 04-11-2013 |
20130089938 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode is provided. The method includes following steps. A light emitting diode chip is provided, wherein the light emitting diode chip comprises a first semiconductor layer, an active layer and a second semiconductor layers stacked together in that order. A patterned mask layer is located on a surface of the first semiconductor layer, wherein the patterned mask layer includes a number of bar-shaped protruding structures aligned side by side, and a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed portion of the first semiconductor layer is etched to form a protruding pair. A number of M-shaped three-dimensional nano-structures are formed by removing the mask layer. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. | 04-11-2013 |
20130089939 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode is provided. The method includes following steps. A light emitting diode chip is provided, the light emitting diode includes a first semiconductor layer, an active layer and a second semiconductor layers stacked on a surface of a substrate in that order. A patterned mask layer is located on the second semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures aligned side by side. The second semiconductor layer is etched to form a number of three-dimensional nano-structures preform. The mask layer is removed to form a number of M-shaped three-dimensional nano-structures. The second semiconductor layer and the active layer are etched to expose a portion of the first semiconductor layer. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. | 04-11-2013 |
20130104967 | SOLAR CELL | 05-02-2013 |
20130105439 | MANUFACTURING METHOD OF GRATING | 05-02-2013 |
20130107367 | GRATING | 05-02-2013 |
20130109127 | METHOD FOR MAKING SOLAR CELL | 05-02-2013 |
20130140519 | LIGHT EMITTING DIODE - A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and the light emitting surface, and a cross section of each of the three-dimensional nano-structures is M-shaped. | 06-06-2013 |
20130140520 | LIGHT EMITTING DIODE - A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The substrate includes an epitaxial growth surface and a light emitting surface. The first semiconductor layer, the active layer and the second semiconductor layer is stacked on the epitaxial growth surface. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped. | 06-06-2013 |
20130140593 | LIGHT EMITTING DIODE - A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped. | 06-06-2013 |
20130140594 | LIGHT EMITTING DIODE - A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. A surface of the substrate away from the active layer is configured as the light emitting surface. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with and covers a surface of the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and the light emitting surface, and a cross section of each of the three-dimensional nano-structure is M-shaped. | 06-06-2013 |
20130140595 | LIGHT EMITTING DIODE - A light emitting diode including a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode is electrically connected with and covers the first surface of the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and the light emitting surface, and a cross section of each of the three-dimensional nano-structure is M-shaped. | 06-06-2013 |
20130140596 | LIGHT EMITTING DIODE - A light emitting diode including a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode covers the entire surface of the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped. | 06-06-2013 |
20130143340 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode includes following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed by removing the patterned mask layer. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. A first electrode is electrically connected with the first semiconductor layer. A second electrode is located to cover the entire surface of the second semiconductor layer which is away from the active layer. | 06-06-2013 |
20130143341 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode includes the following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. The substrate is removed and a surface of the first semiconductor layer is exposed. A first electrode is applied to cover the exposed surface. A second electrode is electrically connected with the second semiconductor layer. | 06-06-2013 |
20130143342 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode is provided. The method includes following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed by removing the patterned mask layer. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. | 06-06-2013 |
20130270603 | LIGHT EMITTING DIODE - A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are orderly stacked on the substrate. The second semiconductor layer is covered with stepped three-dimensional nano-structures in a particular shape, which act to reabsorb wide-angle incident light and re-emit the light at narrower angles of incidence, to increase the light-giving properties of the light emitting diode | 10-17-2013 |
20130328076 | LIGHT EMITTING DIODE - A light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, a first optical symmetric layer, a metallic layer, and a second optical symmetric layer stacked in that sequence. A first electrode is electrically connected to the first semiconductor layer, and a second electrode is electrically connected to the second semiconductor layer. A first effective refractive index n | 12-12-2013 |
20130328083 | SEMICONDUCTOR STRUCTURE - A semiconductor structure includes a first semiconductor layer, an active layer, a second semiconductor layer, a first optical symmetric layer, a metallic layer, and a second optical symmetric layer stacked in that sequence. A first effective refractive index n | 12-12-2013 |
20130328084 | LIGHT EMITTING DIODE - A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first optical symmetric layer, a metallic layer, and a second optical symmetric layer stacked on the substrate in that sequence. A first electrode is electrically connected to the first semiconductor layer, and a second electrode is electrically connected to the second semiconductor layer. A first effective refractive index n | 12-12-2013 |
20130328085 | SEMICONDUCTOR STRUCTURE - A semiconductor structure includes a first semiconductor layer, an active layer, a second semiconductor layer, and a cermet layer stacked together. The active layer is on a surface of the first semiconductor layer. The second semiconductor layer is on a surface of the active layer away from the first semiconductor layer. The cermet layer is on a surface of the second semiconductor layer away from the first semiconductor layer. | 12-12-2013 |
20130328086 | LIGHT EMITTING DIODE - A light emitting diode includes a substrate, a buffer layer, a first semiconductor layer, an active layer, a second semiconductor layer, and a cermet layer. The active layer is on the first semiconductor layer. The second semiconductor layer is on the active layer. The cermet layer is on the second semiconductor layer. A first electrode is electrically connected to the first semiconductor layer. A second electrode is electrically connected to the second semiconductor layer. | 12-12-2013 |
20130328087 | LIGHT EMITTING DIODE - A light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, and a cermet layer. The active layer is on the first semiconductor layer. The second semiconductor layer is on the active layer. The cermet layer is on the second semiconductor layer. A first electrode covers entire surface of the first semiconductor layer away from the active layer. A second electrode is electrically connected to the second semiconductor layer. | 12-12-2013 |
20130330849 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode includes following steps. A substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer are epitaxially grown on the epitaxial growth surface of the substrate in that sequence. A cermet layer is formed on the second semiconductor layer. A first electrode is applied to electrically connected to the first semiconductor layer. A second electrode is applied to electrically connected to the second semiconductor layer. | 12-12-2013 |
20130330863 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode includes following steps. A substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer is epitaxially grown on the epitaxial growth surface of the substrate in that sequence. A first optical symmetric layer is formed on the second semiconductor layer. A metallic layer is applied on the first optical symmetric layer. A second optical symmetric layer is formed on the metallic layer. The substrate is removed. A first electrode is configured to cover entire exposed surface of the first semiconductor layer. A second electrode is electrically connected to the second semiconductor layer. | 12-12-2013 |
20130330864 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode includes following steps. A substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer is epitaxially grown on the epitaxial growth surface of the substrate in that sequence. A first optical symmetric layer is formed on the second semiconductor layer. A metallic layer is applied on the first optical symmetric layer. A second optical symmetric layer is formed on the metallic layer. A first electrode is electrically connected to the first semiconductor layer. A second electrode is electrically connected to the second semiconductor layer. | 12-12-2013 |
20130330865 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode includes following steps. A substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer is epitaxially grown on the epitaxial growth surface of the substrate in that sequence. A cermet layer is formed on the second semiconductor layer. The substrate is removed to form an exposed surface. A first electrode is applied to cover the entire exposed surface of the first semiconductor layer. A second electrode is applied to electrically connected to the second semiconductor layer. | 12-12-2013 |
20140084243 | LIGHT EMITTING DIODE WITH THREE-DIMENSIONAL NANO-STRUCTURES - A light emitting diode including a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode is electrically connected with and covers the first surface of the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and a surface of the active layer, and a cross section of each of the three-dimensional nano-structure is M-shaped. | 03-27-2014 |
20140091276 | LIGHT EMITTING DIODE - A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of first three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer. A number of second three-dimensional nano-structures are located on the substrate, and a cross section of each of the three-dimensional nano-structures is M-shaped. | 04-03-2014 |
20140175045 | METHOD FOR MAKING GRATING - A method for making grating is provided. The method includes following steps. A substrate is provided. A mask layer is located on the substrate. The mask layer is patterned, and a number of bar-shaped protruding structures are formed on a surface of the mask layer, a slot is defined between each of two adjacent protruding structures of the number of protruding structures to expose a portion of the substrate. The protruding structures are etched so that each of two adjacent protruding structures begin to slant face to face until they are contacting each other. The exposed portion of the substrate is etched through the slot. The mask layer is removed. | 06-26-2014 |
20140291614 | THIN FILM TRANSISTOR - A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, a transition layer, an insulating layer and a gate electrode. The drain electrode is spaced apart from the source electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconductor layer by the insulating layer. The transition layer is sandwiched between the insulating layer and the semiconductor layer. The transition layer is a silicon-oxide cross-linked polymer layer including a plurality of Si atoms. The plurality of Si atoms is bonded with atoms of the insulating layer and atoms of the semiconductor layer. | 10-02-2014 |
20140346137 | METHOD FOR MAKING THREE-DIMENSIONAL NANO-STRUCTURE ARRAY - A method for making three-dimensional nano-structure array is provided. The method includes following steps. A base is provided. A mask layer is located on the base. The mask layer is patterned, and a number of bar-shaped protruding structures is formed on a surface of the mask layer, a lot is defined between each of two adjacent bar-shaped protruding structures of the number of protruding structures to expose a portion of the base. The exposed portion of the base is etched through the slot so that the each of two adjacent bar-shaped protruding structures begin to slant face to face until they are contacting each other to form a protruding pair. The mask layer is removed. | 11-27-2014 |
20140367357 | MANUFACTURING METHOD OF GRATING - The disclosure relates to a method for making a grating. The method includes the following steps. First, a substrate is provided. Second, a photoresist film is formed on a surface of the substrate. Third, a nano-pattern is formed on the photoresist film by nano-imprint lithography. Fourth, the photoresist film is etched to form a patterned photoresist layer. Fifth, a mask layer is covered on the patterned photoresist layer and the surface of the substrate exposed to the patterned photoresist layer. Sixth, the patterned photoresist layer and the mask layer thereon are removed to form a patterned mask layer. Seventh, the substrate is etched through the patterned mask layer by reactive ion etching, wherein etching gases includes carbon tetrafluoride, sulfur hexafluoride, and argon. Finally, the patterned mask layer is removed. | 12-18-2014 |
20150050786 | THIN FILM TRANSISTOR - A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, a transition layer, an insulating layer and a gate electrode. The drain electrode is spaced apart from the source electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconductor layer by the insulating layer. The transition layer is sandwiched between the insulating layer and the semiconductor layer. The transition layer is a silicon-oxide cross-linked polymer layer including a plurality of Si atoms. The plurality of Si atoms is bonded with atoms of the insulating layer and atoms of the semiconductor layer. | 02-19-2015 |
20150069326 | LIGHT EMITTING DIODE - A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of first three-dimensional nano-structures are located on the second surface of the first semiconductor layer. A number of second three-dimensional nano-structures are located on a surface of the active layer contacting the second semiconductor layer, and a cross section of each of the three-dimensional nano-structures is M-shaped. | 03-12-2015 |
20150069446 | LIGHT EMITTING DIODE - A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are orderly stacked on the substrate. The first electrode is electrically connected to the first semiconductor layer. The second electrode electrically is connected to the second semiconductor layer. The first semiconductor layer has a number of three-dimensional nano-structures, and each of the number of three-dimensional nano-structures has a stepped structure. | 03-12-2015 |
20150085364 | HOWLLOW-STRUCTURE METAL GRATING - A hollow-structure metal grating is provided. The hollow-structure metal grating includes a substrate, a number of connecting metal layers, and a number of hollow metal protrusions spaced and located on a surface of the substrate. A space is defined between each of the number of hollow metal protrusions and the substrate. | 03-26-2015 |
20150087141 | METHOD OF MANUFACTURING METAL GRATING - A method for making a metal grating is provided. The method includes providing a substrate, applying a metal layer on a surface of the substrate, forming a number of protrusions spaced from each other on a surface of the metal layer, wherein each of the number of protrusions is made of two resist layer, one of the two resist layers being made of silicone oligomer, etching the surface of the metal layer exposed out of the number of protrusions using a physical etching gas and a reactive etching gas, and dissolving the number of protrusions on the surface of the metal layer. | 03-26-2015 |
20150087152 | METHOD OF MANUFACTURING HOWLLOW-STRUCTURE METAL GRATING - A method for making a hollow-structure metal grating is provided. The method includes the following steps. First, a substrate is provided. Second, a metal layer is located on a surface of the substrate. Third, a patterned mask layer is formed on a surface of the metal layer. The patterned mask layer is made of a chemical amplified photoresist. Fourth, the surface of the metal layer exposed out of the patterned mask layer is plasma etched. Lastly, the patterned mask layer on the surface of the metal layer is dissolved. | 03-26-2015 |
20150087153 | METHOD OF MANUFACTURING HOWLLOW-STRUCTURE METAL GRATING - A method for making a hollow-structure metal grating is provided. The method includes providing a substrate, forming a patterned mask layer on a surface of the substrate, applying a metal layer with a thickness greater than 10 nanometers on the patterned mask layer, and removing the patterned mask layer by a washing method using organic solvent. The patterned mask layer includes a plurality of first protruding structures and a plurality of first cavities arranged in intervals. | 03-26-2015 |