Zheleva
Daniella I. Zheleva, Fife GB
Patent application number | Description | Published |
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20080318954 | Compounds - The present invention relates to compounds of formula (I), or a pharmaceutically acceptable salts thereof, wherein: Z | 12-25-2008 |
20090215805 | 4-Heteroaryl Pyrimidine Derivatives and use thereof as Protein Kinase Inhibitors - The present invention relates to compounds of formula (I) or formula (II), or pharmaceutically acceptable salts thereof. Further aspects relate to pharmaceutical compositions comprising compounds according to the invention, and the use of said compounds in the preparation of a medicament for treating a variety of disorders, including proliferative disorders, viral disorders, stroke, etc. | 08-27-2009 |
20100035870 | Pyrimidin-4-yl-3, 4-Dihydro-2H-Pyrrolo[1,2A] Pyrazin-1-one Compounds - The present invention relates to compounds of formula (I), or pharmaceutically acceptable salts thereof, wherein Z is NR | 02-11-2010 |
Elena Zheleva, College Park, MD US
Patent application number | Description | Published |
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20100011071 | Systems and methods for reporter-based filtering of electronic communications and messages - Methods and apparatuses for filtering electronic communications in a communication system. The method includes receiving a message report from a user in response to an electronic message received by the user, and identifying a confidence value associated with the user from whom the message report is received. The method also includes adding, if the confidence value exceeds a predetermined confidence value threshold, the confidence value to a signature value associated with the electronic message, and determining if the signature value exceeds a signature value threshold. The method further includes filtering the electronic message if the signature value exceeds the signature value threshold. | 01-14-2010 |
20110314039 | Media Item Recommendation - Media item recommendation is described. In one example, a statistical model of media consumption is applied to media session consumption data from a community of users to infer parameters of the model. The model comprises a first probability distribution for each user defining a likelihood of the user having a latent characteristic for a session, and a second probability distribution for each latent characteristic defining a likelihood of a user selecting a media item given the latent characteristic. In another example, the inferred parameters are provided to a recommendation engine arranged to recommend media items. The recommendation engine uses the model with inferred parameters and data describing media items newly consumed by a user to infer a current latent characteristic for a current session of the user, and uses them to generate recommended media items for the user in the current session based on the current latent characteristic. | 12-22-2011 |
20140373142 | SYSTEMS AND METHODS FOR REPORTER-BASED FILTERING OF ELECTRONIC COMMUNICATIONS AND MESSAGES - Methods and apparatuses for filtering electronic communications in a communication system. The method includes receiving a message report from a user in response to an electronic message received by the user, and identifying a confidence value associated with the user from whom the message report is received. The method also includes adding, if the confidence value exceeds a predetermined confidence value threshold, the confidence value to a signature value associated with the electronic message, and determining if the signature value exceeds a signature value threshold. The method further includes filtering the electronic message if the signature value exceeds the signature value threshold. | 12-18-2014 |
Tsvetanka S. Zheleva, Rockville, MD US
Patent application number | Description | Published |
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20100171124 | Low-defect density gallium nitride semiconductor structures and fabrication methods - A low-defect gallium nitride structure including a first gallium nitride layer comprising a plurality of gallium nitride columns etched into the first gallium nitride layer and a first dislocation density; and a second gallium nitride layer that extends over the gallium nitride columns and comprises a second dislocation density, wherein the second dislocation density may be lower than the first dislocation density. In addition, a method for fabricating a gallium nitride semiconductor layer that includes masking an underlying gallium nitride layer with a mask that comprises an array of columns and growing the underlying gallium nitride layer through the columns and onto said mask using metal-organic chemical vapor deposition pendeo-epitaxy to thereby form a pendeo-epitaxial gallium nitride layer coalesced on said mask to form a continuous pendeo-epitaxial monocrystalline gallium nitride semiconductor layer. | 07-08-2010 |
20130207119 | LOW-DEFECT DENSITY GALLIUM NITRIDE SEMICONDUCTOR STRUCTURES AND FABRICATION METHODS - A low-defect gallium nitride structure including a first gallium nitride layer comprising a plurality of gallium nitride columns etched into the first gallium nitride layer and a first dislocation density; and a second gallium nitride layer that extends over the gallium nitride columns and comprises a second dislocation density, wherein the second dislocation density may be lower than the first dislocation density. In addition, a method for fabricating a gallium nitride semiconductor layer that includes masking an underlying gallium nitride layer with a mask that comprises an array of columns and growing the underlying gallium nitride layer through the columns and onto said mask using metal-organic chemical vapor deposition pendeo-epitaxy to thereby form a pendeo-epitaxial gallium nitride layer coalesced on said mask to form a continuous pendeo-epitaxial monocrystalline gallium nitride semiconductor layer. | 08-15-2013 |