Patent application number | Description | Published |
20090261043 | CHELATING COMPOUNDS AND IMMOBILIZED TETHERED CHELATORS - Novel di- and tripodal compounds useful as chelators, intermediates for their production and a method for treating an aqueous solution to remove trivalent metal ions are presented. | 10-22-2009 |
20100034799 | ANTI-COCAINE COMPOSITIONS AND TREATMENT - Embodiments of the invention disclosed herein generally relate to anti-cocaine therapeutics. Specifically, some embodiments of the invention relate to highly efficient, thermostable, and long-lasting cocaine esterase (CocE) mutants that can protect against the toxic and reinforcing effects of cocaine in subjects. Provided herein are mutant CocE polypeptides displaying thermostable esterase activity. Also provided are methods of treating cocaine-induced conditions in a subject in need via administration of mutant CocE as well as methods for high-throughput screening of candidate esterase polypeptides. | 02-11-2010 |
20110168636 | CHELATING COMPOUNDS AND IMMOBILIZED TETHERED CHELATORS - Methods are described for removing aluminum from a solution using novel di- and tripodal compounds as chelators. | 07-14-2011 |
20110288844 | Modeling of mPGES-1 three-dimensional structures: applications in drug design and discovery - This invention relates to representations of prostaglandin synthase three-dimensional structures. Such representations are suitable for designing agents that modulate the activity of the enzyme by binding to the substrate binding domain. | 11-24-2011 |
20130136728 | ANTI-COCAINE COMPOSITIONS AND TREATMENT - Embodiments of the invention disclosed herein generally relate to anti-cocaine therapeutics. Specifically, some embodiments of the invention relate to highly efficient, thermostable, and long-lasting cocaine esterase (CocE) mutants that can protect against the toxic and reinforcing effects of cocaine in subjects. Provided herein are mutant CocE polypeptides displaying thermostable esterase activity. Also provided are methods of treating cocaine-induced conditions in a subject in need via administration of mutant CocE as well as methods for high-throughput screening of candidate esterase polypeptides. | 05-30-2013 |
20160122732 | HIGH ACTIVITY MUTANTS OF COCAINE ESTERASE FOR COCAINE HYDROLYSIS - The Bacterial cocaine esterase (CocE) mutants disclosed herein each have enhanced catalytic efficiency for (−)-cocaine, as compared to CocE mutants in the prior art, including CocE mutant E172-173. The presently-disclosed subject matter further includes a pharmaceutical composition including a mutant of bacterial cocaine hydrolase, as described herein, and a suitable pharmaceutical carrier. The presently-disclosed subject matter further includes a method of treating a cocaine-induced condition comprising administering to an individual an effective amount of a mutant of bacterial cocaine hydrolase variant, as disclosed herein, to accelerate cocaine metabolism and produce biologically inactive metabolites. | 05-05-2016 |
Patent application number | Description | Published |
20100197065 | Piezo-Diode Cantilever MEMS Fabrication Method - A piezo thin-film diode (piezo-diode) cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method deposits thin-films overlying a substrate. The substrate can be made of glass, polymer, quartz, metal foil, Si, sapphire, ceramic, or compound semiconductor materials. Amorphous silicon (a-Si), polycrystalline Si (poly-Si), oxides, a-Site, poly-SiGe, metals, metal-containing compounds, nitrides, polymers, ceramic films, magnetic films, and compound semiconductor materials are some examples of thin-film materials. A cantilever beam is formed from the thin-films, and a diode is embedded with the cantilever beam. The diode is made from a thin-film shared in common with the cantilever beam. The shared thin-film may a film overlying a cantilever beam top surface, a thin-film overlying a cantilever beam bottom surface, or a thin-film embedded within the cantilever beam. | 08-05-2010 |
20110032743 | Colloidal-Processed Silicon Particle Device - Colloidal-processed Si particle devices, device fabrication, and device uses have been presented. The generic device includes a substrate, a first electrode overlying the substrate, a second electrode overlying the substrate, laterally adjacent the first electrode, and separated from the first electrode by a spacing. A colloidal-processed Si particle layer overlies the first electrode, the second electrode, and the spacing between the electrodes. The Si particle layer includes a first plurality of nano-sized Si particles and a second plurality of micro-sized Si particles. | 02-10-2011 |
20130161584 | Light Emitting Diode (LED) Using Three-Dimensional Gallium Nitride (GaN) Pillar Structures with Planar Surfaces - A method is provided for fabricating a light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. The method forms a plurality of GaN pillar structures, each with an n-doped GaN (n-GaN) pillar and planar sidewalls perpendicular to the c-plane, formed in either an m-plane or a-plane family. A multiple quantum well (MQW) layer is formed overlying the n-GaN pillar sidewalls, and a layer of p-doped GaN (p-GaN) is formed overlying the MQW layer. The plurality of GaN pillar structures are deposited on a first substrate, with the n-doped GaN pillar sidewalls aligned parallel to a top surface of the first substrate. A first end of each GaN pillar structure is connected to a first metal layer. The second end of each GaN pillar structure is etched to expose the n-GaN pillar second end and connected to a second metal layer. | 06-27-2013 |
20130161643 | Method for Fabricating Three-Dimensional Gallium Nitride Structures with Planar Surfaces - A method is provided for fabricating three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. After providing a substrate, the method grows a GaN film overlying a top surface of the substrate and forms cavities in a top surface of the GaN film. The cavities are formed using a laser ablation, ion implantation, sand blasting, or dry etching process. The cavities in the GaN film top surface are then wet etched, forming planar sidewalls extending into the GaN film. More explicitly, the cavities are formed into a c-plane GaN film top surface, and the planar sidewalls are formed perpendicular to a c-plane, in the m-plane or a-plane family. | 06-27-2013 |
20140077158 | Light Emitting Diode (LED) using Three-Dimensional Gallium Nitride (GaN) Pillar Structures - A method is provided for fabricating a light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. The method forms a plurality of GaN pillar structures, each with an n-doped GaN (n-GaN) pillar and planar sidewalls perpendicular to the c-plane, formed in either an m-plane or a-plane family. A multiple quantum well (MQW) layer is formed overlying the n-GaN pillar sidewalls, and a layer of p-doped GaN (p-GaN) is formed overlying the MQW layer. The plurality of GaN pillar structures are deposited on a first substrate, with the n-doped GaN pillar sidewalls aligned parallel to a top surface of the first substrate. A first end of each GaN pillar structure is connected to a first metal layer. The second end of each GaN pillar structure is etched to expose the n-GaN pillar second end and connected to a second metal layer. | 03-20-2014 |
20150155445 | Counterbore Pocket Structure for Fluidic Assembly - A fluidic assembly method is provided that uses a counterbore pocket structure. The method is based upon the use of a substrate with a plurality of counterbore pocket structures formed in the top surface, with each counterbore pocket structure having a through-hole to the substrate bottom surface. The method flows an ink with a plurality of objects over the substrate top surface. As noted above, the objects may be micro-objects in the shape of a disk. For example, the substrate may be a transparent substrate and the disks may be light emitting diode (LED) disks. Simultaneously, a suction pressure is created at the substrate bottom surface. In response to the suction pressure from the through-holes, the objects are drawn into the counterbore pocket structures. Also provided is a related fluidic substrate assembly. | 06-04-2015 |
20150214430 | Fluidic Assembly Top-Contact LED Disk - A method is provided for forming a direct emission display. The method provides a transparent substrate with an array of wells formed in its top surface. A fluid stream is supplied to the substrate top surface comprising a plurality of top-contact light emitting diode (LED) disks. The wells are filled with the LED disks. A first array of electrically conductive lines is formed over the substrate top surface to connect with a first contact of each LED disk, and a second array of electrically conductive lines is formed over the substrate top surface to connect with a second contact of each LED disk. An insulator over the disk exposes an upper disk (e.g., p-doped) contact region. A via is formed through the disk, exposing a center contact region of a lower (e.g., n-doped) disk contact region. Also provided are a top-contact LED disk and direct emission display. | 07-30-2015 |
20150221827 | Three-Dimensional Gallium Nitride (GaN) Pillar Structure Light Emitting Diode (LED) - A method is provided for fabricating a light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. The method forms a plurality of GaN pillar structures, each with an n-doped GaN (n-GaN) pillar and planar sidewalls perpendicular to the c-plane, formed in either an m-plane or a-plane family. A multiple quantum well (MQW) layer is formed overlying the n-GaN pillar sidewalls, and a layer of p-doped GaN (p-GaN) is formed overlying the MQW layer. The plurality of GaN pillar structures are deposited on a first substrate, with the n-doped GaN pillar sidewalls aligned parallel to a top surface of the first substrate. A first end of each GaN pillar structure is connected to a first metal layer. The second end of each GaN pillar structure is etched to expose the n-GaN pillar second end and connected to a second metal layer. | 08-06-2015 |
20150380169 | Surface-Passivated Mesoporous Structure Solar Cell - A method is presented for forming a surface-passivated mesoporous-structured solar cell. The method provides a transparent substrate, and forms an overlying transparent conductive electrode. A non-mesoporous layer of a first metal oxide is formed overlying the transparent conductive electrode. A mesoporous structure is formed overlying the non-mesoporous layer of first metal oxide. The mesoporous structure includes a mesoporous layer of a second metal oxide over the first metal oxide layer, and coating the mesoporous layer of second metal oxide is a passivating semiconductor layer having a bandgap wider than the second metal oxide. A semiconductor absorber layer is formed overlying the mesoporous structure, which is made up of both organic and inorganic components. A hole-transport medium (HTM) layer is formed overlying the semiconductor absorber layer, which may be an organic material. A metal electrode overlies the HTM layer. Also provided is a surface-passivated mesoporous-structured solar cell and ambipolar material. | 12-31-2015 |
20150380170 | Mesoporous Structure Solar Cell with Siloxane Barrier - A method is provided for forming a mesoporous-structured solar cell with a silane or siloxane barrier. The method forms a transparent conductive electrode overlying a transparent substrate. A non-mesoporous layer of a first metal oxide overlies the transparent conductive electrode, with a mesoporous layer of a second metal oxide overlying the non-mesoporous layer of first metal oxide. An aminoalkoxysilane layer overlies the mesoporous layer of second metal oxide. Over the aminoalkoxysilane layer is deposited a semiconductor absorber layer comprising organic and inorganic components. Using the aminoalkoxysilane linker, the mesoporous layer of second metal oxide is linked to the semiconductor absorber layer. A hole-transport material (HTM) layer is formed overlying the semiconductor absorber layer, and a metal electrode overlies the HTM layer. A mesoporous-structured solar cell with a silane or siloxane barrier is also provided. | 12-31-2015 |
20160005987 | Planar Structure Solar Cell with Inorganic Hole Transporting Material - A method is provided for forming a planar structure solar cell. Generally, the method forms a transparent conductive electrode, with a planar layer of a first metal oxide adjacent to the transparent conductive electrode. For example, the first metal oxide may be an n-type metal oxide. A semiconductor absorber layer is formed adjacent to the first metal oxide, comprising organic and inorganic materials. A p-type semiconductor hole-transport material (HTM) layer is formed adjacent to the semiconductor absorber layer, and a metal electrode is formed. adjacent to the HTM layer. In one aspect, the HTM layer is an inorganic material such as a p-type metal oxide. Some explicit examples of HTM materials include stoichiometric and non-stoichiometric molybdenum (VI) oxide, stoichiometric and non-stoichiometric vanadium (V) oxide, stoichiometric and non-stoichiometric nickel (II) oxide, and stoichiometric and non-stoichiometric copper (I) oxide. Also provide are planar solar cell devices. | 01-07-2016 |
Patent application number | Description | Published |
20100144673 | Diagnosis, prognosis and identification of potential therapeutic targets of multiple myeloma based on gene expression profiling - Gene expression profiling is a powerful tool that has varied utility. It enables classification of multiple myeloma into subtypes and identifying genes directly involved in disease pathogensis and clinical manifestation. The present invention used gene expression profiling in large uniformly treated population of patients with myeloma to identify genes associated with poor prognosis. It also demonstrated that over-expression of CKS1B gene, mainly due to gene amplification that was determined by Fluorescent in-situ hybridization to impart a poor prognosis in multiple myleoma. It is further contemplated that therapeutic strategies that directly target CKS1B or related pathways may represent novel, and more specific means of treating high risk myeloma and may prevent its secondary evolution. | 06-10-2010 |
20120178089 | MATERIALS AND METHODS FOR THE IDENTIFICATION OF DRUG-RESISTANT CANCERS AND TREATMENT OF SAME - Disclosed herein are diagnostic methods for identifying cancer and predicting drug resistance. The assays involve the detection of NEK2 gene expression alone or in combination with other genes or clinical factors. The test is suitable for diagnosing and monitoring treatment of subjects having or suspected of having a neoplastic disease, such as multiple myeloma. The disclosure also relates to inhibitors of NEK2 for the treatment of cancer, including drug-resistant multiple myeloma. | 07-12-2012 |
20120184494 | MULTIPLE MYELOMA PROGNOSIS AND TREATMENT - Disclosed herein are diagnostic and prognostic methods for determining the overall survival, and therapeutic regimes, for multiple myeloma patients. The methods involve the detection of PTHR1 gene expression alone or in combination with other clinical factors. The tests are suitable for diagnosing and monitoring treatment of patients having or suspected of having multiple myeloma. The disclosure also relates to proteasome inhibitors and other activators of PTHR1, for the treatment of multiple myeloma. | 07-19-2012 |
20130109017 | MULTIPLE MYELOMA PROGNOSIS AND TREATMENT | 05-02-2013 |
20130338025 | USE OF GENE EXPRESSION PROFILING TO PREDICT SURVIVAL IN CANCER PATIENT - Gene expression profiling in multiple myeloma patients identifies genes that distinguish between patients with subsequent early death or long survival after treatment. Poor survival is linked to over-expression of genes such as ASPM, OPN3 and CKS1B which are located in chromosome 1q. Given the frequent amplification of 1q in many cancers, it is possible that these genes can be used as powerful prognostic markers and therapeutic targets for multiple myeloma and other cancer. | 12-19-2013 |
20130345080 | Diagnosis, Prognosis and Identification of Potential Therapeutic Targets of Multiple Myeloma Based on Gene Expression Profiling - Gene expression profiling is a powerful tool that has varied utility. It enables classification of multiple myeloma into subtypes and identifying genes directly involved in disease pathogensis and clinical manifestation. The present invention used gene expression profiling in large uniformly treated population of patients with myeloma to identify genes associated with poor prognosis. It also demonstrated that over-expression of CKS1B gene, mainly due to gene amplification that was determined by Fluorescent in-situ hybridization to impart a poor prognosis in multiple myeloma. It is further contemplated that therapeutic strategies that directly target CKS1B or related pathways may represent novel, and more specific means of treating high risk myeloma and may prevent its secondary evolution. | 12-26-2013 |
20140179545 | Diagnosis, Prognosis and Identification of Potential Therapeutic Targets of Multiple Myeloma Based on Gene Expression Profiling - Gene expression profiling is a powerful tool that has varied utility. It enables classification of multiple myeloma into subtypes and identifying genes directly involved in disease pathogensis and clinical manifestation. The present invention used gene expression profiling in large uniformly treated population of patients with myeloma to identify genes associated with poor prognosis. It also demonstrated that over-expression of CKS1B gene, mainly due to gene amplification that was determined by Fluorescent in-situ hybridization to impart a poor prognosis in multiple myleoma. It is further contemplated that therapeutic strategies that directly target CKS1B or related pathways may represent novel, and more specific means of treating high risk myeloma and may prevent its secondary evolution. | 06-26-2014 |
Patent application number | Description | Published |
20080234139 | Diagnosis, prognosis and identification of potential therapeutic targets of multiple myeloma based on gene expression profiling - Provided herein are methods for diagnosing and treating multiple myeloma based on statistical analysis of and subsequent increasing/inhibiting expression of subgroups of plasma cells and B cell genes. Also provided are methods for a developmental stage-based classification for multiple myeloma using hierarchical clustering analysis of plasma cell and B cell nucleic acids and for discriminating among normal, hyperplastic and malignant using gene expression array data and statistical analysis thereof. In addition methods for determining the risk of developing bone disease in a test individual by examining expression levels of a WNT signaling antagonist, such as DKK1, are provided. A kit comprising anti-DKK1 antibodies and detection reagents for measuring DKK1 protein levels also is provided. | 09-25-2008 |
20080274911 | Gene expression profiling based identification of genomic signature of high-risk multiple myeloma and uses thereof - The present invention discloses a method of applying novel bioinformatics and computational methodologies to data generated by high-resolution genome-wide comparative genomic hybridization and gene expression profiling on CD138-sorted plasma cells from a cohort of 92 newly diagnosed multiple myeloma patients treated with high dose chemotherapy and stem cell rescue. The results revealed that gains the q arm and loss of the p arm of chromosome 1 were highly correlated with altered expression of resident genes in this chromosome, with these changes strongly correlated with 1) risk of death from disease progression, 2) a gene expression based proliferation index, and 3) a recently described gene expression-based high-risk index. Importantly, we also found a strong correlation between copy number gains of 8q24, and increased expression of Argonate 2 (AGO2) a gene coding for a master regulator of microRNA expression and maturation, also being significantly correlated with outcome. Our novel findings significantly improve our understanding of the genomic structure of multiple myeloma and its relationship to clinical outcome. | 11-06-2008 |
20080280779 | Gene expression profiling based identification of genomic signatures of multiple myeloma and uses thereof - Monoclonal gammopathy of undetermined significance can progress to multiple myeloma. Applying significance analysis of microarrays, 52 genes, involved in important pathways related to cancer, were differentially expressed between plasma cells from healthy subjects and patients with stringently defined monoclonal gammopathy of undetermined significance/smoldering multiple myeloma and symptomatic multiple myeloma. Unsupervised hierarchical clustering of 351 multiple myeloma and 44 cases of monoclonal gammopathy of undetermined significance and 16 cases of multiple myeloma with a monoclonal gammopathy of undetermined significance history, created two major cluster branches, one containing 82% of the monoclonal gammopathy of undetermined significance cases and 28% of the multiple myeloma, termed monoclonal gammopathy of undetermined significance-like multiple myeloma. Using the same clustering approach on an independent cohort of 213 cases of multiple myeloma revealed 27% with monoclonal gammopathy of undetermined significance-like multiple myeloma which, despite a lower incidence of complete remission, was associated with low-risk clinical and molecular features and superior survival. The monoclonal gammopathy of undetermined significance-like multiple myeloma signature was also seen in patients surviving more than 10 years after autotransplant. | 11-13-2008 |
20080293578 | Diagnosis, prognosis and identification of potential therapeutic targets of multiple myeloma based on gene expression profiling - Provided herein is a method for gene expression profiling multiple myeloma patients into distinct subgroups via DNA hybridization and hierarchical clustering analysis of the hybridization data where the results may further be used to identify therapeutic gene targets. Also provided is a method for controlling bone loss in an individual via pharmacological inhibitors of DKK1 protein. In addition provided herein is a method for diagnosing multiple myeloma using a 15-gene model that classifies myeloma into groups 1-7. | 11-27-2008 |
20100316629 | Use of gene expression profiling to predict survival in cancer patient - Gene expression profiling in multiple myeloma patients identifies genes that distinguish between patients with subsequent early death or long survival after treatment. Poor survival is linked to over-expression of genes such as ASPM, OPN3 and CKS1B which are located in chromosome 1q. Given the frequent amplification of 1q in many cancers, it is possible that these genes can be used as powerful prognostic markers and therapeutic targets for multiple myeloma and other cancer. | 12-16-2010 |
20110319470 | Diagnosis, prognosis and identification of potential therapeutic targets of multiple myeloma based on gene expression profiling - Provided herein is a method for gene expression profiling multiple myeloma patients into distinct subgroups via DNA hybridization and hierarchical clustering analysis of the hybridization data where the results may further be used to identify therapeutic gene targets. Also provided is a method for controlling bone loss in an individual via pharmacological inhibitors of DKK1 protein. In addition provided herein is a method for diagnosing multiple myeloma using a 15-gene model that classifies myeloma into subtypes 1-7. | 12-29-2011 |
Patent application number | Description | Published |
20090213506 | RESISTOR TRIGGERED ELECTROSTATIC DISCHARGE PROTECTION - An electrostatic discharge (ESD) protection device ( | 08-27-2009 |
20090273867 | MULTI-VOLTAGE ELECTROSTATIC DISCHARGE PROTECTION - An electrostatic discharge (ESD) clamp ( | 11-05-2009 |
20100019341 | BURIED ASYMMETRIC JUNCTION ESD PROTECTION DEVICE - An improved lateral bipolar electrostatic discharge (ESD) protection device ( | 01-28-2010 |
20100320501 | NON-SNAPBACK SCR FOR ELECTROSTATIC DISCHARGE PROTECTION - An electrostatic discharge (ESD) protection device ( | 12-23-2010 |
20110175198 | ESD PROTECTION WITH INCREASED CURRENT CAPABILITY - A stackable electrostatic discharge (ESD) protection clamp ( | 07-21-2011 |
20110176243 | STACKED ESD PROTECTION - A stacked electrostatic discharge (ESD) protection clamp ( | 07-21-2011 |
20120119331 | Area-Efficient High Voltage Bipolar-Based ESD Protection Targeting Narrow Design Windows - An area-efficient, high voltage, single polarity ESD protection device ( | 05-17-2012 |
20120231587 | METHODS OF FORMING VOLTAGE LIMITING DEVICES - Embodiments include methods for forming an electrostatic discharge (ESD) protection device coupled across input-output (I/O) and common terminals of a core circuit, where the ESD protection device includes first and second merged bipolar transistors. A base of the first transistor serves as collector of the second transistor and the base of the second transistor serves as collector of the first transistor, the bases having, respectively, first and second widths. A first resistance is coupled between an emitter and base of the first transistor and a second resistance is coupled between an emitter and base of the second transistor. ESD trigger voltage Vt1 and holding voltage Vh can be independently optimized by choosing appropriate base widths and resistances. By increasing Vh to approximately equal Vt1, the ESD protection is more robust, especially for applications with narrow design windows, for example, with operating voltage close to the degradation voltage. | 09-13-2012 |
20120295414 | METHODS FOR PRODUCING STACKED ELECTROSTATIC DISCHARGE CLAMPS - Methods are provided for producing stacked electrostatic discharge (ESD) clamps. In one embodiment, the method includes providing a semiconductor substrate in which first and second serially-coupled transistors are formed. The first transistor includes a first well region having a first lateral edge partially forming the first transistor's base. The second transistor including a second well region having a second lateral edge partially forming the second transistor's base. Third and fourth well regions are formed in the first and second transistors, respectively, and extend a different distance into the substrate than do the well regions of the first and second transistors. The third well region has a third lateral edge separated from the first lateral edge by a first spacing dimension D1. The fourth well region has a fourth lateral edge separated from the second lateral edge by a second spacing dimension D2, which is different than D1. | 11-22-2012 |
20130010394 | MULTI-VOLTAGE ELECTROSTATIC DISCHARGE PROTECTION - An electrostatic discharge (ESD) clamp, coupled across input-output (I/O) and common (GND) terminals of a protected semiconductor device or integrated circuit is provided. One ESD clamp comprises an ESD transistor (ESDT) with source-drain coupled between the GND and I/O terminals, a first resistor coupled between the gate and source and a second resistor coupled between the ESDT body and source. Paralleling the resistors are control transistors with gates coupled to one or more bias supplies Vb, Vb′. The main power rail (Vdd) of the device or IC is a convenient source for Vb, Vb′. When the Vdd is off during shipment, handling, equipment assembly, etc., the ESD trigger voltage Vt | 01-10-2013 |
20130157433 | METHODS FOR FORMING ELECTROSTATIC DISCHARGE PROTECTION CLAMPS WITH INCREASED CURRENT CAPABILITIES - Methods for forming an electrostatic discharge protection (ESD) clamps are provided. In one embodiment, the method includes forming at least one transistor having a first well region of a first conductivity type extending into a substrate. At least one transistor is formed having another well region of a second opposite conductivity type, which extends into the substrate to partially form a collector. The lateral edges of the transistor well regions are separated by a distance D, which at least partially determines a threshold voltage Vt1 of the ESD clamp. A base contact of the first conductivity type is formed in the first well region and separated from an emitter of the second conductivity type by a lateral distance Lbe. The first doping density and the lateral distance Lbe are selected to provide a parasitic base-emitter resistance Rbe in the range of 106-20-2013 | |
20130279051 | Sharing Stacked BJT Clamps for System Level ESD Protection - An area-efficient, high voltage, dual polarity ESD protection device ( | 10-24-2013 |
20140061716 | ESD PROTECTION DEVICE - An electrostatic discharge protection clamp adapted to limit a voltage appearing across protected terminals of an integrated circuit to which the electrostatic discharge protection clamp is coupled is presented. The electrostatic discharge protection clamp includes a substrate, and a first electrostatic discharge protection device formed over the substrate. The first electrostatic discharge protection device includes a buried layer formed over the substrate, the buried layer having a first conductivity type and defining an opening located over a region of the substrate, a first transistor formed over the opening of the buried layer, the first transistor having an emitter coupled to a first cathode terminal of the electrostatic discharge protection clamp, and a second transistor formed over the buried layer, the second transistor having an emitter coupled to a first anode terminal of the electrostatic discharge protection clamp | 03-06-2014 |
20140126091 | Protection Device And Related Fabrication Methods - Protection device structures and related fabrication methods are provided. An exemplary protection device includes a first bipolar junction transistor, a second bipolar junction transistor, a first zener diode, and a second zener diode. The collectors of the first bipolar junction transistors are electrically coupled. A cathode of the first zener diode is coupled to the collector of the first bipolar transistor and an anode of the first zener diode is coupled to the base of the first bipolar transistor. A cathode of the second zener diode is coupled to the collector of the second bipolar transistor and an anode of the second zener diode is coupled to the base of the second bipolar transistor. In exemplary embodiments, the base and emitter of the first bipolar transistor are coupled at a first interface and the base and emitter of the second bipolar transistor are coupled at a second interface. | 05-08-2014 |
20140211346 | Area-Efficient High Voltage Bipolar-Based ESD Protection Targeting Narrow Design Windows - An area-efficient, high voltage, single polarity ESD protection device ( | 07-31-2014 |
20140235026 | METHODS FOR FORMING ELECTROSTATIC DISCHARGE PROTECTION CLAMPS WITH INCREASED CURRENT CAPABILITIES - Methods for forming an electrostatic discharge protection (ESD) clamps are provided. In one embodiment, the method includes forming at least one transistor having a first well region of a first conductivity type extending into a substrate. At least one transistor is formed having another well region of a second opposite conductivity type, which extends into the substrate to partially form a collector. The lateral edges of the transistor well regions are separated by a distance D, which at least partially determines a threshold voltage Vt | 08-21-2014 |
20140346560 | PROTECTION DEVICE AND RELATED FABRICATION METHODS - Protection device structures and related fabrication methods are provided. An exemplary semiconductor protection device includes a base well region having a first conductivity type, an emitter region within the base well region having a second conductivity type opposite the first conductivity type, a collector region having the second conductivity type, a first floating region having the second conductivity type within the base well region between the emitter region and the collector region, and a second floating region having the first conductivity type within the base well region between the first floating region and the collector region. The floating regions within the base well region are electrically connected to reduce current gain and improve holding voltage. | 11-27-2014 |
20140347771 | PROTECTION DEVICE AND RELATED FABRICATION METHODS - Protection device structures and related fabrication methods are provided. An exemplary semiconductor protection device includes a first base region of semiconductor material having a first conductivity type, a second base region of semiconductor material having the first conductivity type and a dopant concentration that is less than the first base region, a third base region of semiconductor material having the first conductivity type and a dopant concentration that is greater than the second base region, an emitter region of semiconductor material having a second conductivity type opposite the first conductivity type within the first base region, and a collector region of semiconductor material having the second conductivity type. At least a portion of the second base region resides between the third base region and the first base region and at least a portion of the first base region resides between the emitter region and the collector region. | 11-27-2014 |
20140367830 | ESD PROTECTION DEVICE - An electrostatic discharge protection clamp includes a substrate and a first electrostatic discharge protection device over the substrate. The first electrostatic discharge protection device includes a buried layer over the substrate. The buried layer has a first region having a first doping concentration and a second region having a second doping concentration. The first doping concentration is greater than the second doping concentration. The first electrostatic discharge protection device includes a first transistor over the buried layer. The first transistor has an emitter coupled to a first cathode terminal of the electrostatic discharge protection clamp. The first electrostatic discharge protection device includes a second transistor over the buried layer. The second transistor has an emitter coupled to a first anode terminal of the electrostatic discharge protection clamp. A collector of the first transistor and a collector of the second transistor are over the first region of the buried layer. | 12-18-2014 |
20150102384 | ESD Protection with Asymmetrical Bipolar-Based Device - An electrostatic discharge (ESD) protection device includes a semiconductor substrate comprising a buried insulator layer and a semiconductor layer over the buried insulator layer having a first conductivity type, and first and second bipolar transistor devices disposed in the semiconductor layer, laterally spaced from one another, and sharing a common collector region having a second conductivity type. The first and second bipolar transistor devices are configured in an asymmetrical arrangement in which the second bipolar transistor device includes a buried doped layer having the second conductivity type and extending along the buried insulator layer from the common collector region across a device area of the second bipolar transistor device. | 04-16-2015 |
20160005730 | ESD Protection with Asymmetrical Bipolar-Based Device - An ESD protection device is fabricated in a semiconductor substrate that includes a semiconductor layer having a first conductivity type. A first well implantation procedure implants dopant of a second conductivity type in the semiconductor layer to form inner and outer sinker regions. The inner sinker region is configured to establish a common collector region of first and second bipolar transistor devices. A second well implantation procedure implants dopant of the first conductivity type in the semiconductor layer to form respective base regions of the first and second bipolar transistor devices. Conduction of the first bipolar transistor device is triggered by breakdown between the inner sinker region and the base region of the first bipolar transistor device. Conduction of the second bipolar transistor device is triggered by breakdown between the outer sinker region and the base region of the second bipolar transistor device. | 01-07-2016 |
Patent application number | Description | Published |
20130136322 | Image-Based Detection Using Hierarchical Learning - Systems and methods are provided for detecting anatomical components in images. In accordance with one implementation, at least one anchor landmark is detected in an image. The position of the anchor landmark is used to detect at least one bundle landmark in the image. In accordance with another implementation, at least two neighboring landmarks are detected in an image, and used to detect at least one anatomical primitive in the image. | 05-30-2013 |
20140161337 | Adaptive Anatomical Region Prediction - Disclosed herein is a framework for facilitating adaptive anatomical region prediction. In accordance with one aspect, a set of exemplar images including annotated first landmarks is received. User definitions of first anatomical regions in the exemplar images are obtained. The framework may detect second landmarks in a subject image. It may further compute anatomical similarity scores between the subject image and the exemplar images based on the first and second landmarks, and predict a second anatomical region in the subject image by adaptively combining the first anatomical regions based on the anatomical similarity scores. | 06-12-2014 |
20140294263 | Synchronized Navigation of Medical Images - Disclosed herein is a framework for facilitating synchronized image navigation. In accordance with one aspect, at least first and second medical images are received. A non-linear mapping between the first and second medical images is generated. A selection of a given location in the first medical image is received in response to a user's navigational operation. Without deforming the second medical image, a target location in the second medical image is determined by using the non-linear mapping. The target location corresponds to the given location in the first medical image. An optimized deformation-free view of the second medical image is generated based at least in part on the target location. While the user performs navigational operations on the first medical image, the framework repeatedly receives the selection of the given location, determines the target location using the non-linear mapping, and generates the optimized deformation-free view of the second medical image based at least in part on the target location. | 10-02-2014 |
20150023575 | Anatomy Aware Articulated Registration for Image Segmentation - Disclosed herein is a framework for facilitating image processing. In accordance with one aspect, the framework receives first image data acquired by a first modality and one or more articulated models. The one or more articulated models may include at least one section image acquired by the first modality and aligned with a local image acquired by a second modality. The framework may align an anatomical region of the first image data with the section image and non-rigidly register a first region of interest extracted from the section image with a second region of interest extracted from the aligned anatomical region. To generate a segmentation mask of the anatomical region, the registered first region of interest may be inversely mapped to a subject space of the first image data. | 01-22-2015 |
20150043774 | Automatic Planning For Medical Imaging - Disclosed herein is a framework for facilitating automatic planning for medical imaging. In accordance with one aspect, the framework receives first image data of a subject. One or more imaging parameters may then be derived using a geometric model and at least one reference anatomical primitive detected in the first image data. The geometric model defines a geometric relationship between the detected reference anatomical primitive and the one or more imaging parameters. The one or more imaging parameters may be presented, via a user interface, for use in acquisition, reconstruction or processing of second image data of the subject. | 02-12-2015 |
20150043799 | Localization of Anatomical Structures Using Learning-Based Regression and Efficient Searching or Deformation Strategy - Disclosed herein is a framework for localizing anatomical structures. In accordance with one aspect, the framework receives a learned regressor and image data of a subject. The learned regressor may be invoked to predict a first spatial metric from a seed voxel to a target anatomical structure in the image data. The learned regressor may further be invoked to predict second spatial metrics from candidate voxels to the target anatomical structure. The candidate voxels may be located around a search region defined by the first spatial metric. The candidate voxel associated with the smallest second spatial metric may then be output as a localized voxel. | 02-12-2015 |
20150043809 | Automatic Segmentation of Articulated Structures - Disclosed herein is a framework for segmenting articulated structures. In accordance with one aspect, the framework receives a target image, a reference image, statistical shape models, local appearance models and a learned landmark detector. The framework may automatically detect first centerline landmarks along centerlines of articulated structures in the target image using the learned landmark detector. The framework may then determine a non-rigid transformation function that registers second centerline landmarks along centerlines of articulated structures in the reference image with the first centerline landmarks. Mean shapes of the statistical shape models may then be deformed to the target image space by applying the non-rigid transformation function on the mean shapes. The framework may further search for candidate points in the mean shapes using the local appearance models. The mean shapes may be fitted to the candidate points to generate a segmentation mask. | 02-12-2015 |