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| 20090121119 | SEMICONDUCTOR DEVICE - The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected. | 05-14-2009 |
| 20100187405 | PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF - It is an object to provide a photoelectric conversion device which detects light ranging from weak light to strong light. The present invention relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer, an amplifier circuit including a thin film transistor and a bias switching means, where a bias which is connected to the photodiode and the amplifier circuit is switched by the bias switching means when intensity of incident light exceeds predetermined intensity, and accordingly, light which is less than the predetermined intensity is detected by the photodiode and light which is more than the predetermined intensity is detected by the thin film transistor of the amplifier circuit. By the present invention, light ranging from weak light to strong light can be detected. | 07-29-2010 |
| 20100187534 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object of the present invention to provide a semiconductor device manufactured in short time by performing the step of forming the thin film transistor and the step of forming the photoelectric conversion layer in parallel, and to provide a manufacturing process thereof. According to the present invention, a semiconductor device is manufactured in such a way that a thin film transistor is formed over a first substrate, a photoelectric conversion element is formed over a second substrate, and the thin film transistor and the photoelectric conversion element are connected electrically by sandwiching a conductive layer between the first and second substrates opposed to each other so that the thin film transistor and the photoelectric conversion element are located between the first and second substrates. Thus, a method for manufacturing a semiconductor device which suppresses the increase in the number of steps and which increases the throughput can be provided. | 07-29-2010 |
| 20110062543 | SEMICONDUCTOR DEVICE - The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected. | 03-17-2011 |
| 20110073981 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a semiconductor device formed over an insulating substrate, typically a semiconductor device having a structure in which mounting strength to a wiring board can be increased in an optical sensor, a solar battery, or a circuit using a TFT, and which can make it mount on a wiring board with high density, and further a method for manufacturing the same. According to the present invention, in a semiconductor device, a semiconductor element is formed on an insulating substrate, a concave portion is formed on a side face of the semiconductor device, and a conductive film electrically connected to the semiconductor element is formed in the concave portion. | 03-31-2011 |
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| 20080203515 | Photoelectric conversion device and electronic device, and method for manufacturing photoelectric conversion device - A photoelectric conversion device includes: a first substrate of which end portions are cut off so as to slope or with a groove shape; a photodiode and an amplifier circuit over the first substrate; a first electrode electrically connected to the photodiode and provided over one end portion of the first substrate; a second electrode electrically connected to the amplifier circuit and provided over an another end portion of the first substrate; and a second substrate having third and fourth electrodes thereon. The first and second electrodes are attached to the third and fourth electrodes, respectively, with a conductive material provided not only at the surfaces of the first, second, third, and fourth electrodes facing each other but also at the side surfaces of the first and second electrodes to increase the adhesiveness between a photoelectric conversion device and a member on which the photoelectric conversion device is mounted. | 08-28-2008 |
| 20080265351 | Semiconductor device and method of fabricating the same - In fabrication of a semiconductor device mounted on a wiring board, a semiconductor circuit portion is formed over a glass substrate. Then, an interposer having connection terminals are bonded to the semiconductor circuit portion. After that, the glass substrate is peeled off from the semiconductor circuit portion, and a mold resin is poured to cover the periphery of the semiconductor circuit portion from a direction of the separation plane. Then, the mold resin is heated under predetermined conditions to be hardened. | 10-30-2008 |
| 20080308851 | Photoelectric conversion element having a semiconductor and semiconductor device using the same - A semiconductor device, particularly, a photoelectric conversion element having a semiconductor layer is demonstrated. The photoelectric conversion element of the present invention comprises, over a substrate, a photoelectric conversion layer and first and second electrodes which are electrically connected to the photoelectric conversion layer. The photoelectric conversion element further comprises a wiring board over which a third and fourth electrodes are provided. The characteristic point of the present invention is that a bonding layer, which readily forms an alloy with a conductive material, is formed over the first and second electrodes. This bonding layer improves the bonding strength between the first and third electrodes and the second and fourth electrode, which contributes to the prevention of the connection defect between the substrate and the wiring board and consequentially to high reliability of the photoelectric conversion element. | 12-18-2008 |
| 20110012218 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - In fabrication of a semiconductor device mounted on a wiring board, a semiconductor circuit portion is formed over a glass substrate. Then, an interposer having connection terminals are bonded to the semiconductor circuit portion. After that, the glass substrate is peeled off from the semiconductor circuit portion, and a mold resin is poured to cover the periphery of the semiconductor circuit portion from a direction of the separation plane. Then, the mold resin is heated under predetermined conditions to be hardened. | 01-20-2011 |
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| 20090126790 | PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD OF THE SAME, AND A SEMICONDUCTOR DEVICE - A photo-sensor having a structure which can suppress electrostatic discharge damage is provided. Conventionally, a transparent electrode has been formed over the entire surface of a light receiving region; however, in the present invention, the transparent electrode is not formed, and a p-type semiconductor layer and an n-type semiconductor layer of a photoelectric conversion layer are used as an electrode. Therefore, in the photo-sensor according to the present invention, resistance is increased an electrostatic discharge damage can be suppressed. In addition, positions of the p-type semiconductor layer and the n-type semiconductor layer, which serve as an electrode, are kept away; and thus, resistance is increased and withstand voltage can be improved. | 05-21-2009 |
| 20100330729 | PHOTOELECTRIC CONVERSION DEVICE, MANUFACTURING METHOD THEREOF AND SEMICONDUCTOR DEVICE - The present invention provides a photoelectric conversion device in which a leakage current is suppressed. A photoelectric conversion device of the present invention comprises: a first electrode over a substrate; a photoelectric conversion layer including a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode, wherein an end portion of the first electrode is covered with the first semiconductor layer; an insulating film, and a second electrode electrically connected to the third semiconductor film with the insulating film therebetween, over the insulating film, are formed over the third semiconductor film, and wherein a part of the second semiconductor layer and a part of the third semiconductor layer is removed in a region of the photoelectric conversion layer, which is not covered with the insulating film. | 12-30-2010 |
