Patent application number | Description | Published |
20080317993 | AG BASE ALLOY THIN FILM AND SPUTTERING TARGET FOR FORMING AG BASE ALLOY THIN FILM - The present invention relates to an Ag alloy film. Particularly, it is preferably used as a reflective film or semi-transmissive reflective film for an optical information recording medium having high thermal conductivity/high reflectance/high durability in the field of optical information recording media, an electromagnetic-shielding film excellent in Ag aggregation resistance, and an optical reflective film on the back of a reflection type liquid crystal display device, or the like. The Ag alloy film of the present invention comprises an Ag base alloy containing Bi and/or Sb in a total amount of 0.005 to 10% (in terms of at %). Further, the present invention relates to a sputtering target used for the deposition of such an Ag alloy film. | 12-25-2008 |
20090061142 | AG BASE ALLOY THIN FILM AND SPUTTERING TARGET FOR FORMING AG BASE ALLOY THIN FILM - The present invention relates to an Ag alloy film. Particularly, it is preferably used as a reflective film or semi-transmissive reflective film for an optical information recording medium having high thermal conductivity/high reflectance/high durability in the field of optical information recording media, an electromagnetic-shielding film excellent in Ag aggregation resistance, and an optical reflective film on the back of a reflection type liquid crystal display device, or the like. The Ag alloy film of the present invention comprises an Ag base alloy containing Bi and/or Sb in a total amount of 0.005 to 10% (in terms of at %). Further, the present invention relates to a sputtering target used for the deposition of such an Ag alloy film. | 03-05-2009 |
20090117313 | AG BASE ALLOY THIN FILM AND SPUTTERING TARGET FOR FORMING AG BASE ALLOY THIN FILM - The present invention relates to an Ag alloy film. Particularly, it is preferably used as a reflective film or semi-transmissive reflective film for an optical information recording medium having high thermal conductivity/high reflectance/high durability in the field of optical information recording media, an electromagnetic-shielding film excellent in Ag aggregation resistance, and an optical reflective film on the back of a reflection type liquid crystal display device, or the like. The Ag alloy film of the present invention comprises an Ag base alloy containing Bi and/or Sb in a total amount of to 10% (in terms of at %). Further, the present invention relates to a sputtering target used for the deposition of such an Ag alloy film. | 05-07-2009 |
20100038233 | AG-BI-BASE ALLOY SPUTTERING TARGET, AND METHOD FOR PRODUCING THE SAME - The sputtering target made of a Ag—Bi-base alloy contains Bi in solid solution with Ag. The sputtering target has an intensity of precipitated Bi of 0.01 at % | 02-18-2010 |
20100202280 | ALUMINUM-ALLOY REFLECTION FILM FOR OPTICAL INFORMATION-RECORDING, OPTICAL INFORMATION-RECORDING MEDIUM, AND ALUMINUM-ALLOY SPUTTERING TARGET FOR FORMATION OF THE ALUMINUM-ALLOY REFLECTION FILM FOR OPTICAL INFORMATION-RECORDING - There are provided an aluminum-alloy reflection film for optical information-recording, having low thermal conductivity, low melting temperature, and high corrosion resistance, capable of coping with laser marking, an optical information-recording medium comprising the reflection film described, and an aluminum-alloy sputtering target for formation of the reflection film described. The invention includes (1) an aluminum-alloy reflection film for optical information-recording, containing an element Al as the main constituent, 1.0 to 10.0 at. % of at least one element selected from the group of rare earth elements, and 0.5 to 5.0 at. % of at least one element selected from the group consisting of elements Cr, Ta, Ti, Mo, V, W, Zr, Hf, Nb, and Ni, (2) an optical information-recording medium comprising any of the aluminum-alloy reflection films described as above, and (3) a sputtering target having the same composition as that for any of the aluminum-alloy reflection films described as above. | 08-12-2010 |
20100264018 | AG BASE SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME - An Ag sputtering target | 10-21-2010 |
20110042135 | AG BASE ALLOY THIN FILM AND SPUTTERING TARGET FOR FORMING AG BASE ALLOY THIN FILM - The present invention relates to an Ag alloy film. Particularly, it is preferably used as a reflective film or semi-transmissive reflective film for an optical information recording medium having high thermal conductivity/high reflectance/high durability in the field of optical information recording media, an electromagnetic-shielding film excellent in Ag aggregation resistance, and an optical reflective film on the back of a reflection type liquid crystal display device, or the like. The Ag alloy film of the present invention comprises an Ag base alloy containing Bi and/or Sb in a total amount of 0.005 to 10% (in terms of at %). Further, the present invention relates to a sputtering target used for the deposition of such an Ag alloy film. | 02-24-2011 |
20110220903 | REFLECTIVE ANODE AND WIRING FILM FOR ORGANIC EL DISPLAY DEVICE - To avoid a phenomenon of deterioration which is characteristic to an organic EL display device, such as a dark spot, without forming a pin hole in an organic material used for forming an organic EL layer. A reflective anode for an organic EL display device includes: an Ag-based alloy film ( | 09-15-2011 |
20120196118 | AG BASE ALLOY THIN FILM AND SPUTTERING TARGET FOR FORMING AG BASE ALLOY THIN FILM - The present invention relates to an Ag alloy film. Particularly, it is preferably used as a reflective film or semi-transmissive reflective film for an optical information recording medium having high thermal conductivity/high reflectance/high durability in the field of optical information recording media, an electromagnetic-shielding film excellent in Ag aggregation resistance, and an optical reflective film on the back of a reflection type liquid crystal display device, or the like. The Ag alloy film of the present invention comprises an Ag base alloy containing Bi and/or Sb in a total amount of 0.005 to 10% (in terms of at %). Further, the present invention relates to a sputtering target used for the deposition of such an Ag alloy film. | 08-02-2012 |
Patent application number | Description | Published |
20110044157 | OPTICAL RECORDING MEDIUM - An optical recording medium includes: a substrate; an information recording layer that is formed on the substrate and that has a recording film, which contains Zn or Al, Pd, and oxygen and in which the amount of oxygen is larger than that in a stoichiometric composition when Zn or Al is completely oxidized to become ZnO or Al | 02-24-2011 |
20110165016 | REFLECTIVE FILM FOR OPTICAL INFORMATION RECORDING MEDIUM AND SPUTTERING TARGET FOR FORMING REFLECTIVE FILM FOR OPTICAL INFORMATION RECORDING MEDIUM - Provided is an Al-based alloy reflective film which reduces noise on an optical information recording medium by having a reflective film surface accurately reproduce grooves, pits and the like formed on a substrate, and has high reflectivity. A sputtering target which is effective for forming such a reflective film is also provided. The reflective film to be used for the optical information recording medium is substantially composed of an Al-based alloy containing 2.0-15.0 atm % of a rare-earth element, and has a crystallite size of 30 nm or smaller in the thickness direction of the reflective film. | 07-07-2011 |
20110216643 | RECORDING LAYER FOR OPTICAL INFORMATION RECORDING MEDIUM, OPTICAL INFORMATION RECORDING MEDIUM, AND SPUTTERING TARGET - A recording layer for an optical information recording medium, which has a high reflectance (initial reflectance) and excellent recording characteristics; an optical information recording medium comprising the recording layer; and a sputtering target useful for forming the recording layer. The recording layer for an optical information recording medium, on which recording is performed by irradiation of laser light, is characterized by containing indium (In) oxide and palladium (Pd) oxide which includes palladium monoxide and palladium dioxide. The recording layer for an optical information recording medium is also characterized in that the ratio of Pd atoms contained in the recording layer relative to the total of In atoms and Pd atoms contained therein is 6-60 atom %. | 09-08-2011 |
20110222392 | READ-ONLY OPTICAL INFORMATION RECORDING MEDIUM AND SPUTTERING TARGET FOR DEPOSITING REFLECTIVE FILM FOR THE OPTICAL INFORMATION RECORDING MEDIUM - Provided is a read-only optical information recording medium (for instance, a dual-layer BD-ROM), which uses blue laser and is provided with a reflecting film which has sufficiently high reflectivity while ensuring optical transparency required in manufacture, has excellent reproduction stability when used for an optical information recording medium and has excellent durability. The read-only optical information recording medium includes a structure wherein a plurality of laminated layers of the reflecting film and the optical transparent layer are formed on a substrate, and reproduces information by means of blue laser. The reflecting film closest to the substrate among the reflecting films is substantially composed of an Al-based alloy containing 0.5-3.0 atm % of Ti, and has a film thickness of 10 nm or more but not more than 30 nm. | 09-15-2011 |
20120009430 | OPTICAL INFORMATION RECORDING MEDIUM AND SPUTTERING TARGET FOR FORMING REFLECTIVE FILM FOR OPTICAL INFORMATION RECORDING MEDIUM - Disclosed is a read-only optical information recording medium which comprises a reflective film having a reflectance suitable for use as a reflective film for an optical information recording medium (e.g., BD-ROM) and having excellent reproduction stability, and which utilizes a blue laser beam. Specifically disclosed is a read-only optical information recording medium comprising a reflective film, wherein the reflective film comprises an Al-based alloy containing at least one element selected from Si and Ge in an amount of 5 to 40 at. %. | 01-12-2012 |