Patent application number | Description | Published |
20090103036 | ACTIVE MATRIX SUBSTRATE AND ELECTRONIC DISPLAY DEVICE - A disclosed active matrix substrate includes plural pixels arranged in a matrix form. At least one of a source electrode, a gate electrode, and a capacitor electrode of pixel component electrodes of each of the pixels is shared by adjacent pixels. | 04-23-2009 |
20090321727 | ORGANIC TRANSISTOR ARRAY, DISPLAY DEVICE AND METHOD OF FABRICATING DISPLAY DEVICE - An organic transistor array includes gate electrodes provided on a substrate, source and drain electrodes provided above or below the gate electrodes via a gate insulator layer, and an organic semiconductor layer opposing the gate electrodes via the gate insulator layer, and forming a channel region between mutually adjacent source and drain electrodes. The organic transistor array in a plan view is sectioned into sections each forming a single pixel, and each section has a closest packed structure. | 12-31-2009 |
20100193775 | ORGANIC TRANSISTOR, ORGANIC TRANSISTOR ARRAY, AND DISPLAY DEVICE - An organic transistor includes a substrate; a gate electrode and a gate insulating film sequentially formed on the substrate in the stated order; and a source electrode, a drain electrode, and an organic semiconductor layer formed on at least the gate insulating film. Ultraviolet light is radiated to the substrate from a side without the gate electrode, transmitted through the substrate and the gate insulating film, reflected at the gate electrode, and absorbed at the organic semiconductor layer. Conductivity of the organic semiconductor layer that has absorbed the ultraviolet light is lower than that of the organic semiconductor layer that has not absorbed the ultraviolet light. | 08-05-2010 |
20100224865 | ORGANIC TRANSISTOR, ORGANIC TRANSISTOR ARRAY AND DISPLAY APPARATUS - A disclosed organic transistor includes a substrate; a gate electrode; a gate insulating film; source-drain electrodes; and an organic semiconductor layer. The gate electrode and the gate insulating film are disposed on the substrate in the stated order, and the source-drain electrodes and the organic semiconductor layer are disposed at least on the gate insulating film in the stated order. At least one of the source-drain electrodes includes a first part disposed directly above the gate electrode, a second part disposed not over the gate electrode, and a connecting part which has a width smaller than a width of the first part and connects the first part and the second part. | 09-09-2010 |
20110215306 | ORGANIC SEMICONDUCTOR ELEMENT AND ORGANIC ELECTRODE - To provide an organic semiconductor element, containing: a source electrode containing a first organic compound layer and a second organic compound layer, at least one of the layers having an organic semiconductor active region; and a drain electrode containing the first organic compound layer and the second organic compound layer, as well as providing an organic electrode, containing: a laminated film, in which a layer of a tetrathiafulvalene derivative expressed by the following general formula I and a layer of an electron accepting compound are laminated: | 09-08-2011 |
20120153271 | LEAVING SUBSTITUENT-CONTAINING COMPOUND, ORGANIC SEMICONDUCTOR MATERIAL, ORGANIC SEMICONDUCTOR FILM CONTAINING THE MATERIAL, ORGANIC ELECTRONIC DEVICE CONTAINING THE FILM, METHOD FOR PRODUCING FILM-LIKE PRODUCT, PI-ELECTRON CONJUGATED COMPOUND AND METHOD FOR PRODUCING THE PI-ELECTRON CONJUGATED COMPOUND - A leaving substituent-containing compound including a partial structure represented by the following General Formula (I): where a pair of X | 06-21-2012 |
20130095605 | LEAVING SUBSTITUENT-CONTAINING COMPOUND, ORGANIC SEMICONDUCTOR MATERIAL FORMED THEREFROM, ORGANIC ELECTRONIC DEVICE, ORGANIC THIN-FILM TRANSISTOR AND DISPLAY DEVICE USING THE ORGANIC SEMICONDUCTOR MATERIAL, METHOD FOR PRODUCING FILM-LIKE PRODUCT, PI-ELECTRON CONJUGATED COMPOUND AND METHOD FOR PRODUCING THE PI ELECTRON CONJUGATED COMPOUND - A leaving substituent-containing compound represented by General Formula (I), wherein the leaving substituent-containing compound can be converted to a compound represented by General Formula (Ia) and a compound represented by General Formula (II), by applying energy to the leaving substituent-containing compound, in General Formulas (I), (Ia) and (II), X and Y each represent a hydrogen atom or a leaving substituent, where one of X and Y is the leaving substituent and the other is the hydrogen atom; Q | 04-18-2013 |
20130096320 | ORGANIC SEMICONDUCTIVE MATERIAL PRECURSOR CONTAINING DITHIENOBENZODITHIOPHENE DERIVATIVE, INK, INSULATING MEMBER, CHARGE-TRANSPORTING MEMBER, AND ORGANIC ELECTRONIC DEVICE - An organic semiconductive material precursor containing a dithienobenzodithiophene derivative expressed by General Formula I: in General Formula I, X and Y represent groups bonded together, upon application of external stimulus, to form X—Y which is eliminated from the compound expressed by General Formula I; R | 04-18-2013 |
20140024841 | ORGANIC SEMICONDUCTIVE MATERIAL PRECURSOR CONTAINING DITHIENOBENZODITHIOPHENE DERIVATIVE, INK, INSULATING MEMBER, CHARGE-TRANSPORTING MEMBER, AND ORGANIC ELECTRONIC DEVICE - An ink containing an organic semiconductive material precursor containing a dithienobenzodithiophene derivative of the following formula: | 01-23-2014 |
20140175416 | LEAVING SUBSTITUENT-CONTAINING COMPOUND, ORGANIC SEMICONDUCTOR MATERIAL, ORGANIC SEMICONDUCTOR FILM CONTAINING THE MATERIAL, ORGANIC ELECTRONIC DEVICE CONTAINING THE FILM, METHOD FOR PRODUCING FILM-LIKE PRODUCT, PI-ELECTRON CONJUGATED COMPOUND AND METHOD FOR PRODUCING THE PI-ELECTRON CONJUGATED COMPOUND - A leaving substituent-containing compound including a partial structure represented by the following General Formula (I): | 06-26-2014 |
20140187797 | LEAVING SUBSTITUENT-CONTAINING COMPOUND, ORGANIC SEMICONDUCTOR MATERIAL, ORGANIC SEMICONDUCTOR FILM CONTAINING THE MATERIAL, ORGANIC ELECTRONIC DEVICE CONTAINING THE FILM, METHOD FOR PRODUCING FILM-LIKE PRODUCT, PI-ELECTRON CONJUGATED COMPOUND AND METHOD FOR PRODUCING THE PI-ELECTRON CONJUGATED COMPOUND - A leaving substituent-containing compound including a partial structure represented by the following General Formula (I): | 07-03-2014 |
Patent application number | Description | Published |
20130250394 | ELECTROCHROMIC DISPLAY DEVICE AND A METHOD FOR MANUFACTURING AN ELECTROCHROMIC DISPLAY DEVICE - Disclosed is an electrochromic display device including a display substrate, a display electrode provided on the display substrate, a first electrochromic layer provided on the display electrode, an intermediate display electrode provided above the first electrochromic layer separately from the first electrochromic layer, a second electrochromic layer provided on and contacting the intermediate display electrode, an opposed substrate, an opposed electrode provided on the opposed substrate, and an electrolyte solution provided between a surface of the display substrate on which the display electrode is formed and a surface of the opposed substrate on which the opposed electrode is formed, wherein the intermediate display electrode contains a rod-shaped, whisker-shaped, or long-fiber-shaped electrically conductive fine particle, and at least a portion of a space in the electrically conductive fine particle is filled with a material forming the second electrochromic layer. | 09-26-2013 |
20140212705 | SOLID DYE SENSITIZATION TYPE SOLAR CELL AND SOLID DYE SENSITIZATION TYPE SOLAR CELL MODULE - A solid dye sensitization type solar cell includes a substrate, a first electrode disposed on the substrate, an electron transport layer including an electron transport semiconductor and disposed on the first electrode, the electron transport layer including a photosensitizing compound adsorbed on a surface of the electron transport semiconductor, a hole transport layer disposed on the electron transport layer, and a second electrode disposed on the hole transport layer. Each of the first electrode and the second electrode includes divided multiple electrodes. | 07-31-2014 |
20140268284 | ELECTROCHROMIC DISPLAY ELEMENT AND DISPLAY DEVICE - Disclosed is an electrochromic display element, including a display substrate, an opposed substrate that is opposed to the display substrate, an opposed electrode being formed at a display-substrate-opposed side of the opposed substrate, a first display electrode and a first electrochromic layer being laminated at an opposed-substrate-opposed side of the display substrate, a single porous film being formed between the display substrate and the opposed substrate, a second display electrode and a second electrochromic layer being laminated at a display-substrate-opposed side of the porous film, a third display electrode and a third electrochromic layer being laminated at an opposed-substrate-opposed side of the porous film, and an electrolyte being present between the display substrate and the opposed substrate. | 09-18-2014 |
20150198857 | ELECTROCHROMIC DEVICE AND PRODUCTION METHOD THEREOF - An electrochromic device, which contains: one support; a first electrode layer formed on the support; a second electrode layer provided to face the first electrode layer; an electrochromic layer provided to be in contact with the first electrode layer or the second electrode layer; a solid electrolyte layer containing inorganic particles, which is filled between the first electrode layer and the second electrode layer, and is provided to be in contact with the electrochromic layer; and a protective layer provided on the second electrode layer. | 07-16-2015 |
20150274761 | ELECTROCHROMIC COMPOUND, ELECTROCHROMIC COMPOSITION, AND DISPLAY ELEMENT - To provide an electrochromic compound, represented by the following general formula (I): General Formula (I) where X | 10-01-2015 |
20150331295 | ELECTROCHROMIC DISPLAY ELEMENT, DISPLAY DEVICE, INFORMATION SYSTEM, AND ELECTROCHROMIC DIMMING LENS - To provide an electrochromic display element, which contains: a display substrate; a display electrode; an electrochromic layer provided in contact with the display electrode; a counter substrate provided to face the display substrate; a counter electrode; a charge retention layer provided in contact with the counter electrode; and an electrolyte layer filling between the display substrate and the counter substrate, wherein the electrochromic layer contains titanium oxide particles, and metal hydroxide is dispersed on surfaces and in inner parts of the titanium oxide particles. | 11-19-2015 |
20150378233 | ELECTROCHROMIC DISPLAY ELEMENT AND IMAGE DISPLAY DEVICE - Disclosed is an electrochromic display element, including a display substrate, a display electrode, an electrochromic layer, an opposed electrode, and an opposed substrate, wherein the electrochromic layer is formed on the display electrode, a liquid crystal composition that includes a low-molecular liquid crystal and an ionic liquid is present between the display electrode and the opposed electrode, and the ionic liquid includes a tetracyanoboric acid ion and/or tris(pentafluoroethyl)trifluorophosphoric acid ion as an anionic component. | 12-31-2015 |
20160005375 | ELECTROCHROMIC DISPLAY DEVICE, AND PRODUCING METHOD AND DRIVING METHOD THEREOF - An electrochromic display device is provided. The electrochromic display device includes a first substrate; a first electrode formed of a transparent conductive film, overlying the first substrate; a second electrode formed of a transparent conductive film, overlying the first electrode; a white reflective layer, overlying the second electrode; a reflective layer, overlying the white reflective layer; a support substrate, overlying the reflective layer; an electrochromic layer, adjacent to the first electrode or the second electrode; and an electrolyte, present between the first electrode and the second electrode. | 01-07-2016 |
20160108072 | ELECTROCHROMIC COMPOUND, ELECTROCHROMIC COMPOSITION, DISPLAY ELEMENT, AND DIMMING ELEMENT - An electrochromic compound, represented by the following general formula (I); | 04-21-2016 |
Patent application number | Description | Published |
20090098719 | METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - An object of the invention is to provide a method for manufacturing a silicon carbide semiconductor device having constant characteristics with reduced variations in forward characteristics. The method for manufacturing the silicon carbide semiconductor device according to the invention includes the steps of: (a) preparing a silicon carbide substrate; (b) forming an epitaxial layer on a first main surface of the silicon carbide substrate; (c) forming a protective film on the epitaxial layer; (d) forming a first metal layer on a second main surface of the silicon carbide substrate; (e) applying heat treatment to the silicon carbide substrate at a predetermined temperature to form an ohmic junction between the first metal layer and the second main surface of the silicon carbide substrate; (f) removing the protective film; (g) forming a second metal layer on the epitaxial layer; and (h) applying heat treatment to the silicon carbide substrate at a temperature from 400° C. to 600° C. to form a Schottky junction of desired characteristics between the second metal layer and the epitaxial layer. | 04-16-2009 |
20110001209 | SEMICONDUCTOR DEVICE - In a termination structure in which a JTE layer is provided, a level or defect existing at an interface between a semiconductor layer and an insulating film, or a minute amount of adventitious impurities that infiltrate into the semiconductor interface from the insulating film or from an outside through the insulating film becomes a source or a breakdown point of a leakage current, which deteriorates a breakdown voltage. A semiconductor device includes: an n | 01-06-2011 |
20110284874 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - In a cell region of a first major surface of a semiconductor substrate of a first conductivity type, a first well of a second conductivity type is in an upper surface. A diffusion region of a first conductivity type is in the upper surface in the first well. A first gate insulating film is on the first well, and a first gate electrode on the first gate insulating film. A second well of a second conductivity type is in the upper surface of the first major surface on a peripheral portion of the cell region. A second gate insulating film is on the second well, and a thick field oxide film is on the peripheral side than the second gate insulating film. A second gate electrode is sequentially on the second gate insulating film and the field oxide film and electrically connected to the first gate electrode. A first electrode is connected to the first, second well and the diffusion region. A second electrode is connected on a second major surface of the semiconductor substrate. A gate wiring is on the field oxide film, going around a periphery of the cell region, and electrically connected to the second gate electrode. The gate wiring is a silicide of a constituting substance of the second gate electrode. | 11-24-2011 |
20120028453 | METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - An object is to provide a method for manufacturing a silicon carbide semiconductor device in which a time required for removing a sacrificial oxide film can be shortened and damage to a surface of the silicon carbide layer can be reduced. The method for manufacturing a silicon carbide semiconductor device includes: (a) performing ion implantation to a silicon carbide layer; (b) performing activation annealing to the ion-implanted silicon carbide layer 2; (c) removing a surface layer of the silicon carbide layer 2, to which the activation annealing has been performed, by dry etching; (d) forming a sacrificial oxide film on a surface layer of the silicon carbide layer, to which the dry etching has been performed, by performing sacrificial oxidation thereto; and (e) removing the sacrificial oxide film by wet etching. | 02-02-2012 |
20120241766 | EPITAXIAL WAFER AND SEMICONDUCTOR ELEMENT - A silicon carbide semiconductor element, including: i) an n-type silicon carbide substrate doped with a dopant, such as nitrogen, at a concentration C, wherein the substrate has a lattice constant that decreases with doping; ii) an n-type silicon carbide epitaxially-grown layer doped with the dopant, but at a smaller concentration than the substrate; and iii) an n-type buffer layer doped with the dopant, and arranged between the substrate and the epitaxially-grown layer, wherein the buffer layer has a multilayer structure in which two or more layers having the same thickness are laminated, and is configured such that, based on a number of layers (N) in the multilayer structure, a doping concentration of a K-th layer from a silicon carbide epitaxially-grown layer side is C·K/(N+1). | 09-27-2012 |
20130026494 | SILICON CARBIDE SEMICONDUCTOR DEVICE - An SiC semiconductor device includes a semiconductor element formed in an SiC substrate, a source electrode and a gate pad formed by using an interconnect layer having barrier metal provided at the bottom surface thereof, and a temperature measuring resistive element formed by using part of the barrier metal in the interconnect line. | 01-31-2013 |
20130196494 | METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - A target made of a metal material is sputtered to form a metal film on a silicon carbide wafer. At this time, the metal film is formed under a condition that an incident energy of incidence, on the silicon carbide wafer, of the metal material sputtered from the target and a sputtering gas flowed in through a gas inlet port is lower than a binding energy of silicon carbide, and more specifically lower than 4.8 eV. For example, the metal film is formed while a high-frequency voltage applied between a cathode and an anode is set to be equal to or higher than 20V and equal to or lower than 300V. | 08-01-2013 |
20130221477 | SEMICONDUCTOR DEVICE - A semiconductor device that can achieve a high-speed operation at a time of switching, and the like. The semiconductor device includes: a p-type buried layer buried within an n | 08-29-2013 |
20140191251 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - It is expected that both reduction of the resistance of a source region and reduction of a leakage current in a gate oxide film be achieved in an MOSFET in a silicon carbide semiconductor device. A leakage current to occur in a gate oxide film of the MOSFET is suppressed by reducing roughness at an interface between a source region and the gate oxide film. If an impurity concentration is to become high at a surface portion of the source region, the gate oxide film is formed by dry oxidation or CVD process. If the gate oxide film is formed by wet oxidation, the impurity concentration at the surface portion of the source region is controlled at a low level. | 07-10-2014 |
20150060882 | SILICON CARBIDE SEMICONDUCTOR DEVICE - A silicon carbide semiconductor device includes: a drift layer of the a first conduction type; a guard ring region of a second conduction type formed in annular form in a portion of one surface of the drift layer; a field insulating film formed on the one surface of the drift layer and surrounding the guard ring region; a Schottky electrode covering the guard ring region and the drift layer exposed inside the guard ring region and having an outer peripheral end existing on the field insulating film; and a surface electrode pad on the Schottky electrode, wherein an outer peripheral end of the surface electrode pad comes into contact with the field insulating film over the outer peripheral end of the Schottky electrode. | 03-05-2015 |
20150303297 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - In a cell region of a first major surface of a semiconductor substrate of a first conductivity type, a first well of a second conductivity type is in an upper surface. A diffusion region of a first conductivity type is in the upper surface in the first well. A first gate insulating film is on the first well, and a first gate electrode on the first gate insulating film. A second well of a second conductivity type is in the upper surface of the first major surface on a peripheral portion of the cell region. A second gate insulating film is on the second well, and a thick field oxide film is on the peripheral side than the second gate insulating film. A second gate electrode is sequentially on the second gate insulating film and the field oxide film and electrically connected to the first gate electrode. A first electrode is connected to the first, second well and the diffusion region. A second electrode is connected on a second major surface of the semiconductor substrate. A gate wiring is on the field oxide film, going around a periphery of the cell region, and electrically connected to the second gate electrode. The gate wiring is a silicide of a constituting substance of the second gate electrode. | 10-22-2015 |