Patent application number | Description | Published |
20080204197 | Memory carrier and method for driving the same - A contactless memory carrier for which it is not necessary to fabricate a barcode and a tag using separate processes is provided. The memory carrier includes a memory which stores data; a control circuit which reads the data from the memory in accordance with a signal transmitted contactlessly from an interrogator; a converter which converts the read data in accordance with an algorithm; an image signal generating circuit which uses the data converted by the converter to generate an image signal; and a display device which uses the image signal to display a code. The data converted in accordance with the algorithm may be stored in the memory in advance. In that case, it is not necessary to provide the converter for converting data in accordance with the algorithm. | 08-28-2008 |
20080230821 | Semiconductor device - In a semiconductor device which can perform data communication through wireless communication, to suppress transmission and the like of an AC signal, the semiconductor device includes an input circuit to which a radio signal is input, a first circuit, which generates a constant voltage, such as a constant voltage circuit or a limiter circuit, a second circuit to which the generated constant voltage is input and which can change impedance of the semiconductor device, and a filter provided between the first circuit and the second circuit. Transmission of an AC signal is suppressed by the filter, and malfunctions or operation defects such as complete inoperative due to variation in the constant voltage is prevented. | 09-25-2008 |
20080258918 | Wireless communication method - To provide a wireless communication method in the case where communication of a wireless signal from a communication device to a semiconductor device can be ensured, communication of a wireless signal can be ensured without using a repeater even when communication of a wireless signal from a semiconductor device to a communication device is difficult due to an external factor such as an obstacle. A plurality of semiconductor devices operate in selectively switching between a first state in which the first wireless signal transmitted from the communication device is received and a second state in which the second wireless signal transmitted from the semiconductor device is received. The semiconductor device in the second state receives the second wireless signal from the semiconductor device in the first state and transmits to the communication device the second wireless signal including detection data for indicating that the second wireless signal is received. | 10-23-2008 |
20090289340 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A conductive shield covering a semiconductor integrated circuit prevents electrostatic breakdown of the semiconductor integrated circuit (e.g., malfunction of a circuit and damage to a semiconductor element) due to electrostatic discharge. Further, with use of a pair of insulators between which the semiconductor integrated circuit is sandwiched, a highly reliable semiconductor having resistance can be provided while achieving reduction in the thickness and size. Moreover, also in the manufacturing process, external stress, or defective shapes or deterioration in characteristics resulted from electrostatic discharge are prevented, and thus the semiconductor device can be manufactured with high yield. | 11-26-2009 |
20090289341 | SEMICONDUCTOR DEVICE - An object is to provide a highly reliable semiconductor device having resistance to external stress and electrostatic discharge while achieving reduction in thickness and size. Another object is to prevent defective shapes and deterioration in characteristics due to external stress or electrostatic discharge in a manufacture process to manufacture a semiconductor device with a high yield. A first insulator and a second insulator facing each other, a semiconductor integrated circuit and an antenna provided between the first insulator and the second insulator facing each other, a conductive shield provided on one surface of the first insulator, and a conductive shield provided on one surface of the second insulator are provided. The conductive shield provided on one surface of the first insulator and the conductive shield provided on one surface of the second insulator are electrically connected. | 11-26-2009 |
20100066325 | SEMICONDUCTOR DEVICE - The adverse effect of noise a constant voltage receives in a semiconductor device capable of data communication through wireless communication is suppressed. Further, communication is performed normally with a constant voltage with less noise even in the case where the amount of received power is large. The semiconductor device includes an input circuit for generating a DC voltage from an AC signal, a circuit for generating a constant voltage lower than the DC voltage, a circuit portion supplied with the constant voltage, a filter, and a feedback circuit for changing impedance with the constant voltage input from the circuit for generating a constant voltage, wherein the filter is electrically connected between the input circuit and the circuit for generating a constant voltage. | 03-18-2010 |
20100120186 | LIQUID CRYSTAL DISPLAY DEVICE - An object of the present invention is to provide a transflective liquid crystal display device having an excellent visibility obtained by optimizing the arrangement of a color filter, which would become a problem in the process of fabricating transparent and reflective liquid crystal display devices, for the transflective liquid crystal display device. In the present invention, the arrangement of a color filter is optimized for improving the visibility of the transflective liquid crystal display device. In addition, the structure, which allows the formation of color filters without increasing the capacitance that affects on a display, is fabricated. Furthermore, in the process of fabricating the transflective liquid crystal display device, an uneven structure is additionally formed without particularly increasing an additional patterning step for the formation of such an uneven structure. | 05-13-2010 |
20100259314 | Semiconductor Device and Driving Method Thereof - The invention provides a semiconductor device with high yield by reducing an effect of variations in characteristics of a semiconductor element. Further, by reducing an effect of variations in characteristics of a semiconductor element to improve productivity, an inexpensive semiconductor device can be provided. Further, an inexpensive semiconductor device can be provided by forming a semiconductor device in a large amount over a large substrate such as a glass substrate and a flexible substrate. A semiconductor device of the invention includes a demodulation signal generating circuit and an antenna or a wire for connecting the antenna. The demodulation signal generating circuit includes a demodulation circuit and a correction circuit. The correction circuit corrects a first demodulation signal generated from the demodulation circuit and generates a second demodulation signal. | 10-14-2010 |
20100289331 | ELECTRIC POWER SUPPLY SYSTEM AND ELECTRIC POWER SUPPLY SYSTEM FOR MOTOR VEHICLE - To provide for a movable electronic device a power receiving device that when charging a battery, simplifies charging of the battery from a power feeder, which is a power supply means, and does not have faults due to an external factor relating to a relay terminal, or damage of the relay terminal, that are caused by directly connecting the battery and the power feeder, and further, to provide an electronic device including the power receiving device. An antenna circuit and a booster antenna for supplying electric power are provided in a movable electronic device. The antenna circuit receives a radio signal such as an electromagnetic wave via the booster antenna, and electric power that is obtained through the receiving of the radio signal is supplied to the battery through a signal processing circuit. | 11-18-2010 |
20100309177 | Semiconductor Device, and Display Device and Electronic Device Utilizing the Same - A semiconductor device having a normal function means is provided, in which the amplitude of an output signal is prevented from being decreased even when a digital circuit using transistors having one conductivity is employed. By turning OFF a diode-connected transistor | 12-09-2010 |
20110007044 | Semiconductor Device, and Display Device and Electronic Device Utilizing the Same - A semiconductor device having a normal function means is provided, in which the amplitude of an output signal is prevented from being decreased even when a digital circuit using transistors having one conductivity is employed. By turning OFF a diode-connected transistor | 01-13-2011 |
20110012183 | WIRELESS CHIP - An ID tag capable of communicating data wirelessly, the size of which is reduced, and where the size of an IC chip is reduced, a limited area of the chip is effectively used, current consumption is reduced, and communication distance is prevented from decreasing. The ID tag of the invention includes an IC chip having an integrated circuit, a resonance capacitor portion and a storage capacitor portion, and an antenna formed over the IC chip so as to overlap at least partially with an insulating film interposed therebetween. The antenna, the insulating film and wirings or semiconductor films forming the integrated circuit are stacked, and one or both of capacitors in the resonance capacitor portion and the storage capacitor portion are formed by this stacked structure. | 01-20-2011 |
20110055463 | SEMICONDUCTOR DEVICE AND DRIVING METHOD THE SAME - It is an object to prevent miswriting by radio in a relatively easy way in a semiconductor device which is capable of data communication (reception/transmission) through wireless communication, in particular, in an RFID tag provided with an OTP memory or a write-once memory. Alternatively, it is an object to prevent data from being tampered. Further alternatively, it is an object to inhibit access to a memory in a relatively easy way and to inhibit reading of data in a semiconductor device which is capable of data communication (reception/transmission) through wireless communication. In a semiconductor device including a control circuit and an OTP memory, a memory includes at least a sector for preventing additional writing and an information sector. When data for preventing additional writing is written to the sector for preventing additional writing and information is written to the information sector which is electrically connected to the sector for preventing additional writing, additional writing to the information sector to which the information is written is impossible. | 03-03-2011 |
20110101333 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device with reduced standby power. A transistor including an oxide semiconductor as an active layer is used as a switching element, and supply of a power supply voltage to a circuit in an integrated circuit is controlled by the switching element. Specifically, when the circuit is in an operation state, supply of the power supply voltage to the circuit is performed by the switching element, and when the circuit is in a stop state, supply of the power supply voltage to the circuit is stopped by the switching element. In addition, the circuit supplied with the power supply voltage includes a semiconductor element which is a minimum unit included in an integrated circuit formed using a semiconductor. Further, the semiconductor included in the semiconductor element contains silicon having crystallinity (crystalline silicon). | 05-05-2011 |
20110102018 | LOGIC CIRCUIT AND SEMICONDUCTOR DEVICE - In a logic circuit where clock gating is performed, the standby power is reduced or malfunction is suppressed. The logic circuit includes a transistor which is in an off state where a potential difference exists between a source terminal and a drain terminal over a period during which a clock signal is not supplied. A channel formation region of the transistor is formed using an oxide semiconductor in which the hydrogen concentration is reduced. Specifically, the hydrogen concentration of the oxide semiconductor is 5x10 | 05-05-2011 |
20110111721 | Semiconductor Device and Driving Method Thereof - The invention provides a semiconductor device with high yield by reducing an effect of variations in characteristics of a semiconductor element. Further, by reducing an effect of variations in characteristics of a semiconductor element to improve productivity, an inexpensive semiconductor device can be provided. Further, an inexpensive semiconductor device can be provided by forming a semiconductor device in a large amount over a large substrate such as a glass substrate and a flexible substrate. A semiconductor device of the invention includes a demodulation signal generating circuit and an antenna or a wire for connecting the antenna. The demodulation signal generating circuit includes a demodulation circuit and a correction circuit. The correction circuit corrects a first demodulation signal generated from the demodulation circuit and generates a second demodulation signal. | 05-12-2011 |
20110127338 | RECTIFIER CIRCUIT, POWER SUPPLY CIRCUIT, AND SEMICONDUCTOR DEVICE - It is an object of the present invention to provide a rectifier circuit that can suppress deterioration or dielectric breakdown of a semiconductor element due to excessive current. A rectifier circuit of the present invention includes at least a first capacitor, a second capacitor, and a diode which are sequentially connected in series in a path which connects an input terminal and one of two output terminals, and a transistor. The second capacitor is connected between one of a source region and a drain region and a gate electrode of the transistor. Further, the other one of the source region and the drain region and the other one of two output terminals are connected each other. | 06-02-2011 |
20110148455 | METHOD FOR MEASURING CURRENT, METHOD FOR INSPECTING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND TEST ELEMENT GROUP - An object is to provide a current measurement method which enables a minute current to be measured. To achieve this, the value of a current flowing through an electrical element is not directly measured, but is calculated from a change in potential observed in a predetermined period. The detection of a minute current can be achieved by a measurement method including the steps of applying a predetermined potential to a first terminal of an electrical element comprising the first terminal and a second terminal; measuring an amount of change in potential of a node connected to the second terminal; and calculating, from the amount of change in potential, a value of a current flowing between the first terminal and the second terminal of the electrical element. | 06-23-2011 |
20110156025 | MEMORY DEVICE AND SEMICONDUCTOR DEVICE - It is an object to provide a memory device whose power consumption can be suppressed and a semiconductor device including the memory device. As a switching element for holding electric charge accumulated in a transistor which functions as a memory element, a transistor including an oxide semiconductor film as an active layer is provided for each memory cell in the memory device. The transistor which is used as a memory element has a first gate electrode, a second gate electrode, a semiconductor film located between the first gate electrode and the second gate electrode, a first insulating film located between the first gate electrode and the semiconductor film, a second insulating film located between the second gate electrode and the semiconductor film, and a source electrode and a drain electrode in contact with the semiconductor film. | 06-30-2011 |
20110175083 | Semiconductor Device - A semiconductor device has a non-volatile memory cell including a write transistor which includes an oxide semiconductor and has small leakage current in an off state (off-state current) between a source and a drain, a read transistor including a semiconductor material different from that of the write transistor, and a capacitor. Data is written or to the memory cell by applying a potential to a node where one of a source electrode and drain electrode of the write transistor, one electrode of the capacitor, and a gate electrode of the read transistor are electrically connected to one another so that the predetermined amount of charge is held in the node. The memory window width is changed by 2% or less, before and after 1×10 | 07-21-2011 |
20110204968 | DEMODULATION CIRCUIT AND RFID TAG INCLUDING THE DEMODULATION CIRCUIT - An object is to provide a demodulation circuit having a sufficient demodulation ability. Another object is to provide an RFID tag which uses a demodulation circuit having a sufficient demodulation ability. A material which enables a reverse current to be small enough, for example, an oxide semiconductor material, which is a wide bandgap semiconductor, is used in part of a transistor included in a demodulation circuit. By using the semiconductor material which enables a reverse current of a transistor to be small enough, a sufficient demodulation ability can be secured even when an electromagnetic wave having a high amplitude is received. | 08-25-2011 |
20110215787 | BOOSTING CIRCUIT AND RFID TAG INCLUDING BOOSTING CIRCUIT - One object is to provide a boosting circuit whose boosting efficiency is enhanced. Another object is to provide an RFID tag including a boosting circuit whose boosting efficiency is enhanced. A node corresponding to an output terminal of a unit boosting circuit or a gate electrode of a transistor connected to the node is boosted by bootstrap operation, so that a decrease in potential which corresponds to substantially the same as the threshold potential of the transistor can be prevented and a decrease in output potential of the unit boosting circuit can be prevented. | 09-08-2011 |
20110254538 | CURRENT MEASUREMENT METHOD, INSPECTION METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND TEST ELEMENT GROUP - One object is to provide a method for measuring current by which minute current can be measured. A value of current flowing through an electrical element is not directly measured but is calculated from change in a potential observed in a predetermined period. The method for measuring current includes the steps of: applying a predetermined potential to a first terminal of an electrical element having the first terminal and a second terminal; measuring an amount of change in a potential of a node connected to the second terminal; and calculating, from the amount of change in the potential, a value of current flowing between the first terminal and the second terminal of the electrical element. Thus, the value of minute current can be measured. | 10-20-2011 |
20110278571 | SEMICONDUCTOR DEVICE - A semiconductor device including a first transistor and a second transistor and a capacitor which are over the first transistor is provided. A semiconductor layer of the second transistor includes an offset region. In the second transistor provided with an offset region, the off-state current of the second transistor can be reduced. Thus, a semiconductor device which can hold data for a long time can be provided. | 11-17-2011 |
20110309688 | WIRELESS POWER FEEDING SYSTEM AND WIRELESS POWER FEEDING METHOD - An object is to provide a power feeding system and a power feeding method which are higher convenient for a power feeding user on the power receiving side. Another object is to provide a power feeding system and a power feeding method which can offer efficient services by determining or managing a power feeding user and controlling the amount of power supplied to the power receiver appropriately by a company on the power feeding side. A power feeding device which supplies power to a power receiver wirelessly manages the power receiver on the basis of identification information of the power receiver and controls power transmitted to the power receiver on the basis of position information of the power receiver. | 12-22-2011 |
20110315780 | SEMICONDUCTOR DEVICE AND WIRELESS COMMUNICATION SYSTEM USING THE SAME - Initialization of a semiconductor device can be efficiently performed, which transmits and receives data through wireless communication. The semiconductor device includes an antenna, a power source circuit, a circuit which uses a DC voltage generated by the power source circuit as a power source voltage, and a resistor. The antenna includes a pair of terminals and receives a wireless signal (a modulated carrier wave). The power source circuit includes a first terminal and a second terminal and generates a DC voltage between the first terminal and the second terminal by using a received wireless signal (the modulated carrier wave). The resistor is connected between the first terminal and the second terminal. In this manner, the semiconductor device and the wireless communication system can transmit and receive data accurately. | 12-29-2011 |
20120024963 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object of this invention is to provide a semiconductor device (an RFID) with reduced loss of voltage/current corresponding to a threshold value of a transistor, and having a voltage/current rectification property. Another object of this invention is to simplify a fabrication process and a circuit configuration. A rectifier circuit is provided in an element included in a semiconductor device (RFID) capable of communicating data wirelessly. As compared to the case where only a diode is provided, coils are provided between gate terminals and drain terminals of transistors constituting the diode in a rectifier circuit, so that the coils overlap an antenna which receives a radio wave, whereby a voltage output by the rectifier circuit is increased using electromagnetic coupling between the antenna which receives a radio wave and the coils, so that the rectification efficiency is improved. | 02-02-2012 |
20120025627 | WIRELESS POWER FEEDING SYSTEM AND WIRELESS POWER FEEDING METHOD - An object is to provide a power feeding system and a power feeding method which are more convenient for a power feeding user at the power receiving end. An object is to provide a power feeding system and a power feeding method which also allow a power feeding provider (a company) which feeds power (at the power transmitting end) to supply power without waste. A power feeding device which wirelessly supplies power to a power receiver detects the position and the resonant frequency of the power receiver to be supplied with power, and controls the frequency of a power signal to be transmitted to the power receiver on the basis of the information. | 02-02-2012 |
20120025631 | WIRELESS POWER FEEDING SYSTEM AND WIRELESS POWER FEEDING METHOD - An object is to provide a power feeding system and a power feeding method which are more convenient for a power feeding user at the power receiving end, without causing increases in complexity and size of devices. An object is to provide a power feeding system and a power feeding method which also allow a power feeding provider (a company) which feeds power (at the power transmitting end) to supply power without waste. A power feeding device which wirelessly supplies power to a power receiver detects the position and the resonant frequency of the power receiver by receiving a position and resonant frequency detection signal using a plurality of sub-carriers having different frequencies from the power receiver, and controls the frequency of a power signal to be transmitted to the power receiver on the basis of the information. An efficient power feeding service can be offered by transmitting a power signal to the power receiver at an optimum frequency for high power transmission efficiency. | 02-02-2012 |
20120026774 | SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME - An object is to provide a semiconductor device in which lower power consumption is realized by lowering voltage for data writing without increase in types of power supply potentials. Another object is to provide a semiconductor device in which threshold voltage drop of a selection transistor is suppressed without increase in types of power supply potentials for data writing. A diode-connected transistor is electrically connected in series with a word line electrically connected to a gate of an n-channel selection transistor. A capacitor is provided between the word line and a bit line electrically connected to one of a source and a drain of the selection transistor; alternatively, the capacitance between the bit line and the word line is used. In data writing, the timing of selecting the word line is earlier than the timing of selecting the bit line. | 02-02-2012 |
20120032943 | Semiconductor Device, and Display Device and Electronic Device Utilizing the Same - A semiconductor device having a normal function means is provided, in which the amplitude of an output signal is prevented from being decreased even when a digital circuit using transistors having one conductivity is employed. By turning OFF a diode-connected transistor | 02-09-2012 |
20120043388 | SEMICONDUCTOR DEVICE - An object of the present invention is to provide a semiconductor device which can obtain the high potential necessary for writing data to a memory, using a small circuit area. In the present invention, by using as input voltage of a booster circuit not the conventionally used output VDD of a regulator circuit | 02-23-2012 |
20120063206 | SEMICONDUCTOR MEMORY DEVICE - An object is to provide a semiconductor memory device capable of copying memory data without using an external circuit. The semiconductor memory device includes a bit line to which first terminals of a plurality of memory cells are connected in common; a pre-charge circuit which is connected to the bit line and pre-charges the bit line with a specific potential in data reading; a data holding circuit comprising a capacitor which temporarily holds data read out from the memory cell or data which is written to the memory cell; and an inverted data output circuit which outputs inverted data of data held in the data holding circuit to the bit line. The inverted data output circuit includes a means for controlling output of inverted data of data held in the data holding circuit. | 03-15-2012 |
20120112191 | SEMICONDUCTOR DEVICE - A data retention period in a semiconductor device or a semiconductor memory device is lengthened. The semiconductor device or the semiconductor memory includes a memory circuit including a first transistor including a first semiconductor layer and a first gate and a second transistor including a second semiconductor layer, a second gate, and a third gate The first semiconductor layer is formed at the same time as a layer including the second gate. | 05-10-2012 |
20120195115 | SEMICONDUCTOR DEVICE - A first field-effect transistor provided over a substrate in which an insulating region is provided over a first semiconductor region and a second semiconductor region is provided over the insulating region; an insulating layer provided over the substrate; a second field-effect transistor that is provided one flat surface of the insulating layer and includes an oxide semiconductor layer; and a control terminal are provided. The control terminal is formed in the same step as a source and a drain of the second field-effect transistor, and a voltage for controlling a threshold voltage of the first field-effect transistor is supplied to the control terminal. | 08-02-2012 |
20120262432 | LIGHT-EMITTING DEVICE, DISPLAY DEVICE, LIGHT-EMITTING SYSTEM, AND DISPLAY SYSTEM - A highly reliable light-emitting device is provided. A lighting device or a display device with a high level of safety and without an exposed electrode is provided. A lighting device or a display device with high layout flexibility is provided. A light-emitting system or a display system to which the light-emitting device or the display device can be applied is provided. An electrode for receiving power and a rectifier circuit are provided in a light-emitting device including an organic EL element and arranged so as to face an electrode for transmitting power, whereby alternating-current power is supplied to the light-emitting device. The alternating-current power is rectified by the rectifier circuit to direct-current power so that the organic EL element in the light-emitting device is driven. | 10-18-2012 |
20120268164 | PROGRAMMABLE LSI - A low-power programmable LSI that can perform dynamic configuration is provided. The programmable LSI includes a plurality of logic elements. The plurality of logic elements each include a configuration memory. Each of the plurality of logic elements performs different arithmetic processing and changes an electrical connection between the logic elements, in accordance with the configuration data stored in the configuration memory. The configuration memory includes a set of a volatile storage circuit and a nonvolatile storage circuit. The nonvolatile storage circuit includes a transistor whose channel is formed in an oxide semiconductor layer and a capacitor whose one of a pair of electrodes is electrically connected to a node that is set in a floating state when the transistor is turned off. | 10-25-2012 |
20120273773 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device which has low power consumption and can operate at high speed. The semiconductor device includes a memory element including a first transistor including crystalline silicon in a channel formation region, a capacitor for storing data of the memory element, and a second transistor which is a switching element for controlling supply, storage, and release of charge in the capacitor. The second transistor is provided over an insulating film covering the first transistor. The first and second transistors have a source electrode or a drain electrode in common. | 11-01-2012 |
20120281469 | SEMICONDUCTOR DEVICE - Noise generated on a word line is reduced without increasing a load on the word line. A semiconductor device is provided in which a plurality of storage elements each including at least one switching element are provided in matrix; each of the plurality of storage elements is electrically connected to a word line and a bit line; the word line is connected to a gate (or a source and a drain) of a transistor in which minority carriers do not exist substantially; and capacitance of the transistor in which minority carriers do not exist substantially can be controlled by controlling a potential of a source and a drain (or a gate) the transistor in which minority carriers do not exist substantially. The transistor in which minority carriers do not exist substantially may include a wide band gap semiconductor. | 11-08-2012 |
20120286268 | DEMODULATION CIRCUIT AND RFID TAG INCLUDING THE DEMODULATION CIRCUIT - An object is to provide a demodulation circuit having a sufficient demodulation ability. Another object is to provide an RFID tag which uses a demodulation circuit having a sufficient demodulation ability. A material which enables a reverse current to be small enough, for example, an oxide semiconductor material, which is a wide bandgap semiconductor, is used in part of a transistor included in a demodulation circuit. By using the semiconductor material which enables a reverse current of a transistor to be small enough, a sufficient demodulation ability can be secured even when an electromagnetic wave having a high amplitude is received. | 11-15-2012 |
20120292613 | SEMICONDUCTOR DEVICE - The data in a volatile memory may conventionally be lost even in case of a very short time power down or supply voltage drop such as an outage or sag. In view of the foregoing, an object is to extend data retention time even with a volatile memory for high-speed data processing. Data retention time can be extended by backing up the data content stored in the volatile memory in a memory including a capacitor and an oxide semiconductor transistor. | 11-22-2012 |
20120293201 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device that can maintain the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units even after supply of power supply voltage is stopped. Another object is to provide a semiconductor device in which the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units can be changed at high speed. In a reconfigurable circuit, an oxide semiconductor is used for a semiconductor element that stores data on the circuit configuration, connection relation, or the like. Specifically, the oxide semiconductor is used for a channel formation region of the semiconductor element. | 11-22-2012 |
20120293203 | SEMICONDUCTOR DEVICE - A programmable analog device in which data can be held even when supply of a power supply potential is stopped. The programmable circuit includes unit cells connected in parallel or in series, and each of the unit cells includes an analog element. A conduction state of each of the unit cells is changed between an on state and an off state. Each of the unit cells includes, as a switch of the unit cell, a first transistor having a sufficiently low off-state current and a second transistor, a gate electrode of the second transistor being electrically connected to a source or drain electrode of the first transistor. The conduction state of the unit cell is controlled with a potential of the gate electrode of the second transistor, which can be kept even when no power is supplied thanks to the low off-state current of the first transistor. | 11-22-2012 |
20120294067 | SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME - In a semiconductor device performing pipeline processing with the use of a reading portion reading an instruction and an arithmetic portion performing an operation in accordance with the instruction, the instruction held in the reading portion is transmitted from the flip-flop to the memory when branch prediction turns out to be wrong. Note that the arithmetic portion controls transmission and reception of the instruction between the flip-flop and the memory which are included in the reading portion. This enables elimination of redundant operations in the reading portion in the case where an instruction read by the reading portion after the branch prediction turns out to be wrong is a subroutine, or the like. That is, the instruction held in the memory is transmitted back to the flip-flop without rereading of the same instruction by the reading portion, whereby the instruction can be output to the arithmetic portion. | 11-22-2012 |
20120311365 | PROGRAMMABLE LOGIC DEVICE - An object is to provide a programmable logic device configured to keep a connection state of logic circuits even while power supply voltage is stopped. The programmable logic device includes arithmetic circuits each of whose logic state can be changed; a configuration changing circuit changing the logic states of the arithmetic circuits; a power supply control circuit controlling supply of power supply voltage to the arithmetic circuits; a state memory circuit storing data on the logic states and data on states of the power supply voltage of the arithmetic circuits; and an arithmetic state control circuit controlling the configuration changing circuit and the power supply control circuit in accordance with the data stored in the state memory circuit. A transistor in which a channel formation region is formed in an oxide semiconductor layer is provided between the configuration changing circuit and each of the arithmetic circuits. | 12-06-2012 |
20130002326 | LOGIC CIRCUIT AND SEMICONDUCTOR DEVICE - In a logic circuit where clock gating is performed, the standby power is reduced or malfunction is suppressed. The logic circuit includes a transistor which is in an off state where a potential difference exists between a source terminal and a drain terminal over a period during which a clock signal is not supplied. A channel formation region of the transistor is formed using an oxide semiconductor in which the hydrogen concentration is reduced. Specifically, the hydrogen concentration of the oxide semiconductor is 5×10 | 01-03-2013 |
20130147518 | LOGIC CIRCUIT AND SEMICONDUCTOR DEVICE - In a logic circuit where clock gating is performed, the standby power is reduced or malfunction is suppressed. The logic circuit includes a transistor which is in an off state where a potential difference exists between a source terminal and a drain terminal over a period during which a clock signal is not supplied. A channel formation region of the transistor is formed using an oxide semiconductor in which the hydrogen concentration is reduced. Specifically, the hydrogen concentration of the oxide semiconductor is 5×10 | 06-13-2013 |
20130251091 | PULSE OUTPUT CIRCUIT, SHIFT REGISTER AND ELECTRONIC EQUIPMENT - A driver circuit of a display device, which includes TFTs of a single conductivity type and outputs an output signal with normal amplitude. A pulse is inputted to TFTs | 09-26-2013 |
20130264574 | SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE AND ELECTRONIC DEVICE USING THE SAME - A semiconductor device having a normal function means is provided, in which the amplitude of an output signal is prevented from being decreased even when a digital circuit using transistors having one conductivity is employed. By turning OFF a diode-connected transistor | 10-10-2013 |
20130285464 | POWER FEEDING SYSTEM AND POWER FEEDING METHOD - To provide a power feeding system and the like with which charging can be performed without a decrease in the power supply efficiency. To provide a power feeding system and the like with which can offer a power feeding service which is efficient to both a power feeding user and a power feeding provider. The power transmission state in each of power transmitting portions is monitored, the power transmitting portion having the highest power transmission efficiency is selected based on positional advantage, and the power transmitting resonance coil included in the selected power transmitting portion is kept at a first resonance frequency, whereby power transmission continues. The resonance frequency of the power transmitting resonance coil included in the non-selected power transmitting portion (the number of the non-selected power transmitting portions may be plural) is set to a second resonance frequency, whereby power transmission is stopped. | 10-31-2013 |
20130290747 | POWER RECEPTION CONTROL DEVICE, POWER RECEPTION DEVICE, POWER TRANSMISSION AND RECEPTION SYSTEM, AND ELECTRONIC DEVICE - Provided is a power reception device in which power consumption at the time of wireless power supply is reduced. A power reception device is provided with a power reception control device capable of temporarily stopping supply of power supply voltage to a communication control unit for controlling communication in a break period of communication intermittently performed between a power transmission device and a power reception device. In the structure, a clock signal is generated on the basis of a power receiving signal transmitted from the power transmission device, and a period of communication intermittently performed can be measured using the clock signal. Further, a structure may be employed in which supply of power supply voltage to the communication unit in the power reception control device can be stopped in the break period of the communication. | 10-31-2013 |
20130308372 | STORAGE DEVICE AND WRITING METHOD OF THE SAME - A storage device in which held voltage is prevented from decreasing due to feedthrough in writing data to the storage device at high voltage is provided. The storage device includes a write circuit, a bit line, a word line, a transistor, and a capacitor. A gate of the transistor is electrically connected to the word line. One of a source and a drain of the transistor is electrically connected to the bit line. The other of the source and the drain of the transistor is electrically connected to one terminal of the capacitor. The other terminal of the capacitor is electrically connected to a ground. The write circuit includes an element holding write voltage and a circuit gradually decreasing voltage from the element holding write voltage. The write voltage is output from the write circuit to the word line. | 11-21-2013 |
20130314152 | DEMODULATION CIRCUIT AND RFID TAG INCLUDING THE DEMODULATION CIRCUIT - An object is to provide a demodulation circuit having a sufficient demodulation ability. Another object is to provide an RFID tag which uses a demodulation circuit having a sufficient demodulation ability. A material which enables a reverse current to be small enough, for example, an oxide semiconductor material, which is a wide bandgap semiconductor, is used in part of a transistor included in a demodulation circuit. By using the semiconductor material which enables a reverse current of a transistor to be small enough, a sufficient demodulation ability can be secured even when an electromagnetic wave having a high amplitude is received. | 11-28-2013 |
20130322187 | SEMICONDUCTOR DEVICE AND PROCESSING UNIT - A semiconductor device in which the power consumption of a register is low is provided. Further, a processing unit whose operation speed is high and whose power consumption is low is provided. In the semiconductor device, a register operating at high speed and a nonvolatile FILO (first-in-last-out) register capable of reading and writing data from/to the register are provided. | 12-05-2013 |
20140042496 | SEMICONDUCTOR DEVICE - A programmable analog device in which data can be held even when supply of a power supply potential is stopped. The programmable circuit includes unit cells connected in parallel or in series, and each of the unit cells includes an analog element. A conduction state of each of the unit cells is changed between an on state and an off state. Each of the unit cells includes, as a switch of the unit cell, a first transistor having a sufficiently low off-state current and a second transistor, a gate electrode of the second transistor being electrically connected to a source or drain electrode of the first transistor. The conduction state of the unit cell is controlled with a potential of the gate electrode of the second transistor, which can be kept even when no power is supplied thanks to the low off-state current of the first transistor. | 02-13-2014 |
20140077786 | BOOSTING CIRCUIT AND RFID TAG INCLUDING BOOSTING CIRCUIT - One object is to provide a boosting circuit whose boosting efficiency is enhanced. Another object is to provide an RFID tag including a boosting circuit whose boosting efficiency is enhanced. A node corresponding to an output terminal of a unit boosting circuit or a gate electrode of a transistor connected to the node is boosted by bootstrap operation, so that a decrease in potential which corresponds to substantially the same as the threshold potential of the transistor can be prevented and a decrease in output potential of the unit boosting circuit can be prevented. | 03-20-2014 |
20140117932 | Moving Object, Wireless Power Feeding System, and Wireless Power Feeding Method - An object is to provide a moving object structure capable of reducing power loss caused when power is supplied from a power feeding device to a moving object by wireless communication. Another object is to provide a moving object structure capable of reducing the strength of a radio wave radiated to the surroundings. Before power is supplied to a moving object, a radio wave for alignment of antennas is output from a power feeding device. That is, radio waves are output from a power feeding device in two stages. In a first stage, a radio wave is output to align positions of antennas of the power feeding device and the moving object. In a second stage, a radio wave is output to supply power from the power feeding device to the moving object. | 05-01-2014 |
20140184162 | POWER STORAGE DEVICE CONTROL SYSTEM, POWER STORAGE SYSTEM, AND ELECTRICAL APPLIANCE - Deterioration of a power storage device is reduced. Switches that control the connections of a plurality of power storage devices separately are provided. The switches are controlled with a plurality of control signals, so as to switch between charge and discharge of each of the power storage devices or between serial connection and parallel connection of the plurality of power storage devices. Further, a semiconductor circuit having a function of carrying out arithmetic is provided for the power storage devices, so that a control system of the power storage devices or a power storage system is constructed. | 07-03-2014 |
20140231882 | Wireless Processor, Wireless Memory, Information System, And Semiconductor Device - The invention provides a processor obtained by forming a high functional integrated circuit using a polycrystalline semiconductor over a substrate which is sensitive to heat, such as a plastic substrate or a plastic film substrate. Moreover, the invention provides a wireless processor, a wireless memory, and an information processing system thereof which transmit and receive power or signals wirelessly. According to the invention, an information processing system includes an element forming region including a transistor which has at least a channel forming region formed of a semiconductor film separated into islands with a thickness of 10 to 200 nm, and an antenna. The transistor is fixed on a flexible substrate. The wireless processor in which a high functional integrated circuit including the element forming region is formed and the semiconductor device transmit and receive data through the antenna. | 08-21-2014 |
20140266305 | SEMICONDUCTOR DEVICE - A semiconductor device having a power-saving circuit. The semiconductor device includes an input-output terminal and a holding circuit. When the input-output terminal is used, an inverter loop of the holding circuit is made not to operate by controlling a switch, and when the input-output terminal is not used, the inverter loop of the holding circuit operate by controlling the switch. Power consumption of the holding circuit can be reduced. An OS transistor is preferably used for the switch. | 09-18-2014 |
20140269063 | METHOD FOR DRIVING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - To read multilevel data from a memory cell having a transistor using silicon and a transistor using an oxide semiconductor, without switching a signal for reading the multilevel data in accordance with the number of the levels of the multilevel data. The electrical charge of a bit line is discharged, the potential of the bit line is charged via a transistor for writing data, and the potential of the bit line which is changed by the charging is read as multilevel data. With such a structure, the potential corresponding to data held in a gate of the transistor can be read by only one-time switching of a signal for reading data. | 09-18-2014 |
20140269099 | METHOD FOR DRIVING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - To read multilevel data from a memory cell having a transistor using silicon and a transistor using an oxide semiconductor, without switching a signal for reading the multilevel data in accordance with the number of the levels of the multilevel data. The potential of the bit line is precharged, the electrical charge of the bit line is discharged via a transistor for writing data, and the potential of the bit line which is changed by the discharging is read as multilevel data. With such a structure, the potential corresponding to data held in a gate of the transistor can be read by only one-time switching of a signal for reading data. | 09-18-2014 |
20140310533 | SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME - An object is to solve all of the following problems caused when a volatile register and a non-volatile register are used as registers in a processor: degradation of the integrity of data stored in the non-volatile register; loss of data security due to the processor and a non-volatile memory device that are provided apart from each other; and slow data processing speed due to wiring delay or the like caused by these devices provided apart from each other. When data maintained in the volatile register is stored in the non-volatile register before supply of power supply voltage is stopped, the data is encrypted by an encryption circuit and stored in a non-volatile memory device that is provided separately from the processor. Then, the data stored in the non-volatile register is compared with the compressed and encrypted data stored in the non-volatile memory device. | 10-16-2014 |
20140340134 | SEMICONDUCTOR DEVICE - To reduce power consumption of a circuit (TEDC) which detects timing errors in a main flip-flop by determining whether or not output data signals of the main flip-flop and a shadow flip-flop correspond. The TEDC includes a power gating circuit (PGC) which performs power gating of the shadow FF and a reset circuit (RSTC) which resets an output signal of the shadow FF. The PGC makes the shadow FF in an active mode only when error detection needs to be performed; other than that, the PGC makes the shadow FF in a power saving mode. The RSTC supplies a certain voltage to an output terminal of the shadow FF in the power saving mode to suppress malfunction of the TEDC. A transistor using an oxide semiconductor is used to supply the voltage to the output terminal. | 11-20-2014 |
20140367681 | SEMICONDUCTOR DEVICE - The data in a volatile memory may conventionally be lost even in case of a very short time power down or supply voltage drop such as an outage or sag. In view of the foregoing, an object is to extend data retention time even with a volatile memory for high-speed data processing. Data retention time can be extended by backing up the data content stored in the volatile memory in a memory including a capacitor and an oxide semiconductor transistor. | 12-18-2014 |
20140375263 | WIRELESS POWER FEEDING SYSTEM AND WIRELESS POWER FEEDING METHOD - An object is to provide a power feeding system and a power feeding method which are more convenient for a power feeding user at the power receiving end. An object is to provide a power feeding system and a power feeding method which also allow a power feeding provider (a company) which feeds power (at the power transmitting end) to supply power without waste. A power feeding device which wirelessly supplies power to a power receiver detects the position and the resonant frequency of the power receiver to be supplied with power, and controls the frequency of a power signal to be transmitted to the power receiver on the basis of the information. An efficient power feeding service can be offered by transmitting a power signal to the power receiver at an optimum frequency for high power transmission efficiency. | 12-25-2014 |
20150048376 | Semiconductor Device, and Display Device and Electronic Device Utilizing the Same - A semiconductor device having a normal function means is provided, in which the amplitude of an output signal is prevented from being decreased even when a digital circuit using transistors having one conductivity is employed. By turning OFF a diode-connected transistor | 02-19-2015 |