Patent application number | Description | Published |
20080291960 | Semiconductor laser diode and the manufacturing method thereof - A multibeam semiconductor laser diode having: an n-type semiconductor substrate; an n-type clad layer, an active layer, a p-type clad layer and a contact layer; a plurality of partitioning grooves extending from one end to the other end of the substrate and formed from the contact layer to a predetermined depth of the p-type clad layer; a stripe-shaped ridge sandwiched between two separation grooves; an insulating layer covering an area from each side wall of the contact layer of each ridge to an end of the partitioning region via the separation groove; a first electrode formed on a second plane of the substrate; and a second electrode formed in each partitioning region covering an area above the ridge, separation grooves and multilayer semiconductor layers outside the separation grooves, the second electrode being constituted of a lower second electrode layer and an upper second plated layer. | 11-27-2008 |
20090041076 | Opto-semiconductor devices - An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of the semiconductor substrate. A support substrate has a first surface formed with a fixing portion having a conductive layer for fixing the first electrode connected thereto through a bonding material. Bonding material and conductive layers forming the first electrode react to form a reaction layer. The difference in thermal expansion coefficient between semiconductor substrate and support substrate is not more than 50%. A second barrier metal layer not reactive with bonding material is formed inside the first electrode uppermost conductive layer, while uppermost layer reacts with the bonding material to form the reaction layer. | 02-12-2009 |
20100254421 | MULTI-BEAM SEMICONDUCTOR LASER DEVICE - Within a semiconductor laser device, mounting a semiconductor laser element array of multi-beam structure on a sub-mount, the semiconductor laser element array of multi-beam structure comprises one piece of a semiconductor substrate | 10-07-2010 |
20110116526 | SEMICONDUCTOR OPTICAL DEVICE - By forming upper-bank patterns made of Au with a thickness of 1.5 μm or larger on bank portions, a solder material on a submount and a surface of a conductive layer in an upper part of a ridge portion of a laser chip are separated so as not to be in contact with each other, thereby preventing the stress generated in a bonding portion when bonding the laser chip and the submount from being applied to the ridge portion. | 05-19-2011 |
20150055670 | MULTI-BEAM SEMICONDUCTOR LASER DEVICE - Provided is a multi-beam semiconductor laser device in which deterioration of element characteristics is suppressed even when a beam pitch is reduced. The multi-beam semiconductor laser device includes: a first semiconductor multilayer in which a plurality of semiconductor layers are laminated; a plurality of light emitting ridge portions that are formed on the first semiconductor multilayer; a support electrode portion formed in a region between a pair of neighboring light emitting ridge portions; and a front ridge portion formed on the front side of the support electrode portion. The support electrode portion is electrically connected to one of the pair of neighboring light emitting ridge portions. The support electrode portion is higher than the one light emitting ridge portion. An end of the front ridge portion on the front end surface side is higher than the one light emitting ridge portion at the front end surface. | 02-26-2015 |
Patent application number | Description | Published |
20130014545 | DRUM-TYPE WASHING MACHINEAANM Ushijima; HideakiAACI KyotoAACO JPAAGP Ushijima; Hideaki Kyoto JPAANM Inoue; YutakaAACI ShigaAACO JPAAGP Inoue; Yutaka Shiga JPAANM Itami; MasahiroAACI OsakaAACO JPAAGP Itami; Masahiro Osaka JPAANM Taguchi; TomoyukiAACI ShigaAACO JPAAGP Taguchi; Tomoyuki Shiga JP - In a drum-type washing machine, a plurality of dampers include a first damper and a second damper, the second damper is provided in such a manner that compression force on the second damper from a rotary drum rotated in the forward direction is larger than that on the first damper, the second damper and a vibration detection portion are arranged posterior to a gravity center of a water tank in the front and rear direction, and the first damper is arranged anterior to the second damper. Thus, precise imbalance determination is performed, so that low vibration is realized. | 01-17-2013 |
20130014546 | DRUM-TYPE WASHING MACHINEAANM Kobayashi; ShinichiroAACI OsakaAACO JPAAGP Kobayashi; Shinichiro Osaka JPAANM Inoue; YutakaAACI ShigaAACO JPAAGP Inoue; Yutaka Shiga JPAANM Itami; MasahiroAACI OsakaAACO JPAAGP Itami; Masahiro Osaka JPAANM Ushijima; HideakiAACI KyotoAACO JPAAGP Ushijima; Hideaki Kyoto JP - A drum-type washing machine includes left and right side plates formed of steel plates, the side plates defining side surfaces of an outer case, a front cover provided with an openable and closable door, the front cover defining a front surface of the outer case, an upper cover defining an upper surface of the outer case, a water tank oscillatably arranged in the outer case, and a rotary drum axially supported in the water tank, wherein a plurality of concave portions are formed on the left and right side plates, and the concave portion closer to the front surface of the outer case as a door side has an arc shape with a larger curvature. Thus, rigidity of the side plates in the up and down direction and the left and right direction is increased, so that vibration at the time of spin-drying is reduced. | 01-17-2013 |
20130125596 | DRUM-TYPE WASHING MACHINE - A front-loading-type washing machine of the invention includes a rotary drum; a water tub; a motor; a filter case that communicates with the water tub via a drain pipe connected to the bottom of the water tub and has a filter provided therein; a circulating pump that communicates with the filter case via a circulating water suction pipe connected to the filter case; a channel that communicates with the circulating pump via a circulating water discharge pipe connected to the circulating pump, and is formed on the front inner side of the water tub; a plurality of jetting ports that are provided on the inner peripheral side of the channel and discharge washing water into the water tub; and a control device. The opening area of the jetting port provided at the farthest position from a connecting portion between the circulating water discharge pipe and the channel is larger than the opening area of the jetting port provided at the nearest position from the connecting portion. | 05-23-2013 |
Patent application number | Description | Published |
20130260650 | COMPOSITION FOR POLISHING AND METHOD OF POLISHING SEMICONDUCTOR SUBSTRATE USING SAME - Provided is a polishing composition containing abrasive grains, at least one type of alcohol compound selected from the group consisting of aliphatic alcohols with 2 to 6 carbon atoms and glycol ethers with 3 to 10 carbon atoms, at least one type of basic compound selected from the group consisting of quaternary ammonium salts and alkali metal salts, and water. The average primary particle diameter of the abrasive grains is 5 to 50 nm. The content of the alcohol compound in the polishing composition is 0.01 to 1% by mass. The polishing composition is mainly used in an application of polishing a semiconductor substrate surface. | 10-03-2013 |
20150014579 | POLISHING COMPOSITION AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE - A polishing composition contains: silicon dioxide having an average primary particle diameter of 40 nm or more as calculated from the specific surface area determined by the BET method; a nitrogen-containing water-soluble polymer; and a basic compound. The value of B/A is 1 or more and less than 7,000 and the value of C/A is 5,000 or more and less than 1,500,000 when in one liter of the polishing composition, A is defined as the number of silicon dioxide, B is defined as the number of monomer units of the nitrogen-containing water-soluble polymer, and C is defined as the number of molecules of the basic compound. Alternatively, the value of B/A is 1 or more and less than 7,000 and the value of C/A is 5,000 or more and less than 100,000. The polishing composition is used, for example, for polishing a semiconductor substrate. | 01-15-2015 |