Patent application number | Description | Published |
20100001329 | METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING CAPACITOR ELEMENT - In a complete CMOS SRAM having a memory cell composed of six MISFETs formed over a substrate, a capacitor element having a stack structure is formed of a lower electrode covering the memory cell, an upper electrode, and a capacitor insulating film (dielectric film) interposed between the lower electrode and the upper electrode. One electrode (the lower electrode) of the capacitor element is connected to one storage node of a flip-flop circuit, and the other electrode (the upper electrode) is connected to the other storage node. As a result, the storage node capacitance of the memory cell of the SRAM is increased to improve the soft error resistance. | 01-07-2010 |
20100148869 | POWER AMPLIFICATION CIRCUIT HAVING TRANSFORMER - In order to realize a wider bandwidth of a frequency characteristic of a power amplification circuit, outputs of differential push-pull amplifiers which are matched at respectively different frequencies are combined together by secondary inductors, and the combined signal is outputted. | 06-17-2010 |
20110012181 | METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVCIE HAVING CAPACITOR ELEMENT - In a complete CMOS SRAM having a memory cell composed of six MISFETs formed over a substrate, a capacitor element having a stack structure is formed of a lower electrode covering the memory cell, an upper electrode, and a capacitor insulating film (dielectric film) interposed between the lower electrode and the upper electrode. One electrode (the lower electrode) of the capacitor element is connected to one storage node of a flip-flop circuit, and the other electrode (the upper electrode) is connected to the other storage node. As a result, the storage node capacitance of the memory cell of the SRAM is increased to improve the soft error resistance. | 01-20-2011 |
20110150402 | OPTICAL FIBER CABLE - An optical fiber cable which is suitably set in a conduit by pushing the optical fiber cable into the conduit so as to insert the optical fiber cable through the conduit and which does not reduce the ease of manufacture and the mechanical characteristics of the optical fiber cable. The optical fiber cable includes an optical fiber cable core wire and a sheath covering the optical fiber cable core wire, wherein a dynamic friction coefficient between a surface of the sheath of the optical fiber cable and a surface of a sheath of another optical fiber cable is 0.17 to 0.34, and a dynamic friction coefficient between the surface of the sheath of the optical fiber cable and a surface of a sheet composed of polyvinyl chloride is 0.30 to 0.40. | 06-23-2011 |
20110255834 | OPTICAL FIBER CABLE - An optical fiber cable enabling further reduction of possibilities of disconnection of optical fiber due to, for instance, cicada oviposition. The optical fiber cable ( | 10-20-2011 |
20120133431 | POWER AMPLIFICATION CIRCUIT HAVING TRANSFORMER - In order to realize a wider bandwidth of a frequency characteristic of a power amplification circuit, outputs of differential push-pull amplifiers which are matched at respectively different frequencies are combined together by secondary inductors, and the combined signal is outputted. | 05-31-2012 |
20130069723 | POWER AMPLIFICATION CIRCUIT HAVING TRANSFORMER - In order to realize a wider bandwidth of a frequency characteristic of a power amplification circuit, outputs of differential push-pull amplifiers which are matched at respectively different frequencies are combined together by secondary inductors, and the combined signal is outputted. | 03-21-2013 |
Patent application number | Description | Published |
20090108371 | SEMICONDUCTOR DEVICE AND MANUFACTURING THE SAME - A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film. | 04-30-2009 |
20100044793 | SEMICONDUCTOR DEVICE HAVING A PLURALITY OF MISFETS FORMED ON A MAIN SURFACE OF A SEMICONDUCTOR SUBSTRATE - In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs | 02-25-2010 |
20100097156 | Semiconductor device and manufacturing the same - A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film. | 04-22-2010 |
20100097157 | SEMICONDUCTOR DEVICE AND MANUFACTURING THE SAME - A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film. | 04-22-2010 |
20100258876 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - To reduce the size and improve the power added efficiency of an RF power module having an amplifier element composed of a silicon power MOSFET, the on resistance and feedback capacitance, which were conventionally in a trade-off relationship, are reduced simultaneously by forming the structure of an offset drain region existing between a gate electrode and an n | 10-14-2010 |
20110127594 | SEMICONDUCTOR DEVICE AND MANUFACTURING THE SAME - A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film. | 06-02-2011 |
20110220999 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs | 09-15-2011 |
20110254087 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - To reduce the size and improve the power added efficiency of an RF power module having an amplifier element composed of a silicon power MOSFET, the on resistance and feedback capacitance, which were conventionally in a trade-off relationship, are reduced simultaneously by forming the structure of an offset drain region existing between a gate electrode and an n | 10-20-2011 |
20120235250 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs | 09-20-2012 |
Patent application number | Description | Published |
20110248344 | SEMICONDUCTOR DEVICE - An object of the invention is to provide a semiconductor device having improved performance, high reliability, and a reduced chip size, in particular, to provide a semiconductor device having an MOSFET over an SOI substrate capable of maintaining its reliability while controlling the potential of a well below a gate electrode and preventing generation of parasitic capacitance. Generation of parasitic capacitance is prevented by controlling the potential of a well below a gate electrode by using a well contact plug passing through a hole portion formed in a gate electrode wiring. Generation of defects in a gate insulating film is prevented by making use of a gettering effect produced by causing an element isolation region to extend along the gate electrode. | 10-13-2011 |
20110278581 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The reliability of a semiconductor device including a MOSFET formed over an SOI substrate is improved. A manufacturing method of the semiconductor device is simplified. A semiconductor device with n-channel MOSFETsQn formed over an SOI substrate SB includes an n | 11-17-2011 |
20120228711 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A semiconductor device has a first element region, a second element region, and a first isolation region in a thin film region and a third element region, a fourth element region, and a second isolation region in a thick film region . It is manufactured with step (a) of providing a substrate having a silicon layer formed via an insulating layer , step (b) of forming element isolation insulating films in the silicon layer in the first isolation region and the second isolation region of the substrate step (c) of forming a hard mask in the thin film region , step (d) of forming silicon films over the silicon layer exposed from the hard mask in the third element region and the fourth element region, and step (e) of forming element isolation insulating films between the silicon films in the third element region and the fourth element region. | 09-13-2012 |
20130265109 | POWER AMPLIFICATION CIRCUIT HAVING TRANSFORMER - In order to realize a wider bandwidth of a frequency characteristic of a power amplification circuit, outputs of differential push-pull amplifiers which are matched at respectively different frequencies are combined together by secondary inductors, and the combined signal is outputted. | 10-10-2013 |
20140206155 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The reliability of a semiconductor device including a MOSFET formed over an SOI substrate is improved. A manufacturing method of the semiconductor device is simplified. A semiconductor device with n-channel MOSFETsQn formed over an SOI substrate SB includes an n | 07-24-2014 |
20150155300 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A semiconductor device has a first element region, a second element region, and a first isolation region in a thin film region and a third element region, a fourth element region, and a second isolation region in a thick film region. It is manufactured with step (a) of providing a substrate having a silicon layer formed via an insulating layer, step (b) of forming element isolation insulating films in the silicon layer in the first isolation region and the second isolation region of the substrate step (c) of forming a hard mask in the thin film region, step (d) of forming silicon films over the silicon layer exposed from the hard mask in the third element region and the fourth element region, and step (e) of forming element isolation insulating films between the silicon films in the third element region and the fourth element region. | 06-04-2015 |