Patent application number | Description | Published |
20090114947 | Semiconductor device and inverter circiut having the same - A semiconductor device includes a semiconductor substrate, an insulated gate transistor formed to the semiconductor substrate, a diode formed to the semiconductor substrate, and a control transistor formed to the semiconductor substrate. A first current terminal of the insulated gate transistor is coupled to a cathode of the diode at a high potential side. A second current terminal of the insulated gate transistor is coupled to an anode of the diode at a low potential side. The control transistor is configured to turn off the insulated gate transistor by reducing a potential of a gate terminal of the insulated gate transistor when the diode conducts an electric current. | 05-07-2009 |
20100140658 | Method of manufacturing semiconductor device including insulated gate bipolar transistor and diode - In a method of manufacturing a semiconductor device, a semiconductor substrate of a first conductivity type having first and second surfaces is prepared. Second conductivity type impurities for forming a collector layer are implanted to the second surface using a mask that has an opening at a portion where the collector layer will be formed. An oxide layer is formed by enhanced-oxidizing the collector layer. First conductivity type impurities for forming a first conductivity type layer are implanted to the second surface using the oxide layer as a mask. A support base is attached to the second surface and a thickness of the semiconductor substrate is reduced from the first surface. An element part including a base region, an emitter region, a plurality of trenches, a gate insulating layer, a gate electrode, and a first electrode is formed on the first surface of the semiconductor substrate. | 06-10-2010 |
20110044009 | Semiconductor device - An electric device includes: a first electric element; a second electric element capable of flowing large current therethrough so that heat is generated in the second electric element; a heat sink; and a first wiring board and a second wiring board, which are disposed on one side of the heat sink. The large current in the second electric element is larger than that in the first electric element. The first wiring board and the second wiring board are separated each other. The first electric element is disposed on the first wiring board, and the second electric element is disposed on the second wiring board. | 02-24-2011 |
20110198733 | SEMICONDUCTOR DEVICE AND METHOD OF PATTERNNING RESIN INSULATION LAYER ON SUBSTRATE OF THE SAME - In a method of manufacturing a semiconductor device, an electrode layer is formed on a surface of a semiconductor substrate, and a resin insulation layer is formed on the surface of the semiconductor substrate so that the electrode layer can be covered with the resin insulation layer. A tapered hole is formed in the insulation layer by using a tool bit having a rake angle of zero or a negative value. The tapered hole has an opening defined by the insulation layer, a bottom defined by the electrode layer, and a side wall connecting the opening to the bottom. | 08-18-2011 |
20110207241 | Formation method of metallic electrode of semiconductor device and metallic electrode formation apparatus - A formation method of a metallic electrode of a semiconductor device is disclosed. The method includes: acquiring data about surface shape of a surface part of a semiconductor substrate; and causing a deformation device to deform the semiconductor substrate based on the data so that a distance between a cutting plane and the surface part falls within a required accuracy in cutting amount. In deforming the semiconductor substrate, multiple actuators are used as the deformation device. A pitch of the multiple actuators is set to a value that is greater than one-half of wavelength of spatial frequency of a thickness distribution of the semiconductor substrate and that is less than or equal to the wavelength. | 08-25-2011 |
20110207264 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes cutting a part of a resin insulating layer formed on a surface of a semiconductor substrate with a cutting tool. The cutting the part of the resin insulating layer includes cutting a portion of the resin insulating layer that has a surface on which a metal layer is disposed. The cutting the portion of the resin insulating layer is performed in such a manner that, in a stress distribution inside the resin insulating layer along an edge portion of the cutting tool and a peripheral portion of the edge portion, a width at 90% of a maximum value is not more than 1.3 μm. | 08-25-2011 |
20130316498 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING INSULATED GATE BIPOLAR TRANSISTOR AND DIODE - In a method of manufacturing a semiconductor device, a semiconductor substrate of a first conductivity type having first and second surfaces is prepared. Second conductivity type impurities for forming a collector layer are implanted to the second surface using a mask that has an opening at a portion where the collector layer will be formed. An oxide layer is formed by enhanced-oxidizing the collector layer. First conductivity type impurities for forming a first conductivity type layer are implanted to the second surface using the oxide layer as a mask. A support base is attached to the second surface and a thickness of the semiconductor substrate is reduced from the first surface. An element part including a base region, an emitter region, a plurality of trenches, a gate insulating layer, a gate electrode, and a first electrode is formed on the first surface of the semiconductor substrate. | 11-28-2013 |
Patent application number | Description | Published |
20100147570 | CIRCUIT SUBSTRATE AND CIRCUIT SUBSTRATE MANUFACTURING METHOD - A circuit substrate includes protruding terminals and has a structure that ensures an excellent connection with an electronic component, such as an IC. The circuit substrate on which an IC is to be mounted includes terminals that are to be electrically connected to solder bumps located on the IC. The terminals protrude from the mounting surface of a substrate body on which the IC is to be mounted. The sectional area of the top surface of each of the terminals is about 1.2 times the sectional area of each of the terminals on the mounting surface. | 06-17-2010 |
20100147573 | CIRCUIT SUBSTRATE, CIRCUIT MODULE AND METHOD FOR MANUFACTURING THE CIRCUIT SUBSTRATE - A thin circuit substrate and a circuit module are arranged such that the circuit module includes an IC mounted on a circuit substrate, the IC includes an IC body and an solder bump located on a mounting surface of the IC body, and the circuit substrate includes a substrate including a recess formed by recessing a portion of a mounting surface of the substrate on which the IC is to be mounted, and a terminal protruding from the mounting surface of the substrate. The terminal is to be electrically connected to the solder bump. | 06-17-2010 |
20130008586 | CIRCUIT SUBSTRATE, CIRCUIT MODULE AND METHOD FOR MANUFACTURING THE CIRCUIT SUBSTRATE - A thin circuit substrate and a circuit module are arranged such that the circuit module includes an IC mounted on a circuit substrate, the IC includes an IC body and an solder bump located on a mounting surface of the IC body, and the circuit substrate includes a substrate including a recess formed by recessing a portion of a mounting surface of the substrate on which the IC is to be mounted, and a terminal protruding from the mounting surface of the substrate. The terminal is to be electrically connected to the solder bump. | 01-10-2013 |