Patent application number | Description | Published |
20100175509 | METHOD OF PROCESSING COPPER ARSENIC COMPOUND - Provided is a method of easily producing scorodite which is stable and has excellent filtering properties with excellent reproducibility and without using complex operations, when processing arsenic that is included in non-ferrous smelting intermediates, and particularly when processing copper arsenic compounds in the form of an intermetallic compound. Scorodite is produced by a leaching step of leaching arsenic from a non-ferrous melting intermediate containing a copper arsenic compound in the form of an intermetallic compound in the presence of a sulfidizing agent and an oxidizing agent, a solution adjusting step of oxidizing trivalent arsenic to pentavalent arsenic by adding the oxidizing agent to the leaching solution, and a crystallizing step of converting the arsenic in the adjusted solution to scorodite crystals. | 07-15-2010 |
20100196230 | METHOD OF PROCESSING NON-FERROUS SMELTING INTERMEDIATE CONTAINING ARSENIC - Provided is a method of easily producing easily-filterable and stable scorodite that meets the leaching standard (conformance to Japanese Environmental Agency Notice 13) with excellent reproducibility and without using complex operations, when processing arsenic that is included in non-ferrous smelting intermediates, and particularly when processing arsenic in the form of a sulfide. Scorodite is produced by a leaching step of leaching arsenic from a non-ferrous melting intermediate containing arsenic in the weakly acid region, a solution adjusting step of oxidizing trivalent arsenic to pentavalent arsenic by adding an oxidizing agent to the leaching solution, and a crystallizing step of converting the arsenic in the adjusted solution to scorodite crystals. | 08-05-2010 |
20100196231 | Method Of Processing Non-Ferrous Smelting Intermediates Containing Arsenic - The object is to remove arsenic in a stable form from an arsenic-containing smelting intermediate product. Thus, disclosed is a method for treating an arsenic-containing nonferrous smelting intermediate product, which comprises: a leaching step of subjecting a mixed slurry of a nonferrous smelting intermediate product containing arsenic in the form of a sulfide and a nonferrous smelting intermediate product containing arsenic and metal copper to the oxidation/leaching in an acidic range to produce a leaching solution; a solution preparation step of adding an oxidizing agent to the leaching solution to oxidize trivalent arsenic into pentavalent arsenic, thereby producing a preparation solution; and a crystallization step of converting arsenic contained in the preparation solution into a scorodite crystal. | 08-05-2010 |
20100215570 | METHOD OF ALKALI PROCESSING SUBSTANCE CONTAINING ARSENIC - To provide a method of generating, with good reproducibility and ease and without complicated operations, scorodite which satisfies the elution standard (in accordance with Notification of No. 13 of Japanese Environment Agency) and which has good filterbility and stability for processing arsenic contained in a non-ferrous smelting intermediate, particularly, for processing a diarsenic trioxide form. A method of processing diarsenic trioxide, including: a leaching step of adding water and alkali to a non-ferrous smelting intermediate that contains diarsenic trioxide to produce slurry, heating the slurry, and leaching arsenic; a solution adjusting step of adding an oxidizing agent to the leachate to oxidize trivalent arsenic to pentavalent arsenic so as to obtain an adjusted solution; and a crystallizing step of converting arsenic in the adjusted solution to scorodite crystal. | 08-26-2010 |
20100266484 | METHOD OF PROCESSING DIARSENIC TRIOXIDE - To provide a method of generating, with good reproducibility and ease and without complicated operations, scorodite which satisfies the elution standard (in accordance with Notification of No. 13 of Japanese Environment Agency) and which has good filterbility and stability for processing arsenic contained in a diarsenic trioxide form. A method of processing diarsenic trioxide, including: a leaching step of adding water to diarsenic trioxide to produce slurry, heating the slurry, and leaching arsenic while adding an oxidant to obtain leachate; a deoxidization step of removing the oxidant so as to obtain an adjusted solution; and a crystallizing step of converting arsenic in the adjusted solution to scorodite crystal. | 10-21-2010 |
Patent application number | Description | Published |
20080303986 | Wire grid polarizer and liquid crystal display device using the same - A wire grid polarizer has mainly a resin substrate | 12-11-2008 |
20100178879 | RF POWER MODULE - A technique is provided for achieving reduction in size of an electronic device with a power amplifier circuit, while enhancing the performance of the electronic device. An RF power module for a mobile communication device includes first and second semiconductor chips, a passive component, and first and second integrated passive components, which are mounted over a wiring board. In the first semiconductor chip, MISFET elements constituting power amplifier circuits for the GSM 900 and for the DCS 1800 are formed, and a control circuit is also formed. In the first integrated passive component, a low pass filter circuit for the GSM 900 is formed, and in the second integrated passive component, a low pass filter circuit for the DCS 1800 is formed. In the second semiconductor chip, antenna switch circuits for the GSM 900 and DCS 1800 are formed. Over the upper surface of the wiring board, the second semiconductor chip is disposed next to the first semiconductor chip between the integrated passive components. | 07-15-2010 |
20110236856 | REMOVABLE DENTURE AND METHOD OF PRODUCING THE SAME - A removable denture includes a denture base that is made of ultrahigh molecular weight polyethylene and is formed in a predetermined shape by a molded object of ultrahigh molecular weight polyethylene being cut; and artificial teeth that are arrayed at the denture base. | 09-29-2011 |
20120026642 | MULTILAYER CERAMIC ELECTRONIC COMPONENT - Disclosed is a multilayer ceramic electronic component, comprising an element body obtained by stacking dielectric layers (thickness t1) and electrode layers (thickness t2). The dielectric layer ( | 02-02-2012 |
20120238438 | DIELECTRIC CERAMIC COMPOSITION - A dielectric ceramic composition comprising a main component and at least one or more subcomponent elements has a dielectric particle and a grain boundary. The dielectric particle has a main component phase substantially composed of the main component, and a diffusive phase around the main component phase where at least one selected from the subcomponent elements is diffused, a local minimal value of Cs is located at an outside edge side with respect to a position of the local maximum value of Cs, and Cs is increased from a position of the local minimal value of Cs toward the outside edge, when the dielectric particle is cut on an arbitrary cutting plane including the main component phase, and Cs is defined as a concentration of one or more elements selected from the subcomponent elements in an arbitrary position in the dielectric particle. | 09-20-2012 |
20140102533 | Polyvinylidene Fluoride Resin Film, Multilayer Film, Backsheet for Solar Cell Module and Production Process of Film - The invention provides a polyvinylidene fluoride resin (PVDF) film in which a crystal structure determined from an absorbance by an infrared absorption spectrum is such that a proportion of a β-type crystal is 10% or more based on the sum total of an α-type crystal and the β-type crystal, further preferably a film whose tensile modulus in TD at 120° C. is 90 MPa or less, or a film in which a ratio of its tensile modulus in TD at a temperature of 100° C. to its tensile modulus in TD at a temperature of 23° C. is 4% or less, in particular an extruded film, a backsheet for solar cell module, which comprises the film, and a production process of the film, which comprises quenching a PVDF sheet-shaped material melt-extruded at 5 to 70° C. and preferably then subjecting the quenched material to a heat treatment. | 04-17-2014 |
20140306213 | ORGANIC EL ELEMENT - An organic EL element including: a transparent supporting substrate; a diffraction grating having a concavity and convexity layer with first concavities and convexities formed on a surface thereof and disposed on the transparent supporting substrate; and a transparent electrode, an organic layer, and a metal electrode which are stacked in this order on the diffraction grating and formed into such shapes that a shape of the first concavities and convexities formed on the surface of the diffraction grating is maintained, the organic layer comprising at least a light emitting layer. The organic EL element satisfies specified conditions (A) to (C). | 10-16-2014 |