Patent application number | Description | Published |
20080219006 | Display apparatus - The present invention supplied a display apparatus using plastic substrate instead of glass substrate, which can solve such problems that the plastic substrate has a low heat conductivity and its heat release performance becomes bad so that it is difficult to obtain stable performance and reliability. In the display apparatus, inner surface electrode integrated with vertical wiring between plastic substrate and thin film LED | 09-11-2008 |
20080224170 | Semiconductor wafer, light emitting diode print head, image forming apparatus, and method of producing semiconductor device - A nitride semiconductor wafer includes a substrate; a nitride compound semiconductor layer formed on the substrate; and an Al | 09-18-2008 |
20090001391 | LIGHT EMITTING PANEL, DISPLAY DEVICE AND LIGHT SOURCE DEVICE - A light emitting panel includes a plurality of light emitting element arrays each of which has a plurality of light emitting elements arranged in a plane. The light emitting element arrays are configured so that an arrangement plane of the light emitting elements of one light emitting element array is overlapped with another arrangement plane of the light emitting elements of another light emitting element array in substantially parallel to each other, and so that the light emitting elements of one light emitting element array and the light emitting elements of another light emitting element array emit lights to the same side. | 01-01-2009 |
20090188847 | Ventilation system of sludge receiving facility - A sludge receiving facility is provided with upper and lower structures respectively having inner spaces communicating with each other, wherein sludge tanks each having a sludge charging port are provided in the lower structure, and a partition wall configured to partition a carrying-in space of the upper structure from the inner space is provided, the sludge receiving facility including: outside air blowing means; air circulating means configured to enable the inner space and the carrying-in space to communicate with each other; first exhausting means configured to exhaust air from an upper part of the carrying-in space; second exhausting means configured to exhaust air above the sludge charging port; and third exhausting means configured to exhaust air inside the sludge tanks, wherein opening/closing means are respectively provided in the circulating means and the first to third exhausting means. | 07-30-2009 |
20090212398 | Semiconductor device - A thin-film semiconductor element is formed on a plastic substrate in a semiconductor device. A thermal expansion buffer layer is interposed between the thin-film semiconductor element and the plastic substrate. Although the thin-film semiconductor element is made from a material with a thermal expansion coefficient differing from the thermal expansion coefficient of the plastic substrate, the thermal expansion buffer layer interposed between the thin-film semiconductor element and the plastic substrate protects the thin-film semiconductor element from damage caused by mechanical stress in the device fabrication process due to the different thermal expansion coefficients, enabling the semiconductor device to function reliably. | 08-27-2009 |
20090239361 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - An aspect of the invention provides a method of manufacturing a method of manufacturing a semiconductor element comprises the steps of: growing epitaxially a semiconductor layer on top of a semiconductor substrate; forming a patterned portion of the grown semiconductor layer by forming a pattern by a patterning process on top of the grown semiconductor layer; removing a portion of the semiconductor layer other than the patterned portion by a first etching method with a first etchant; and immersing a resultant from the first etching method in a second etchant that etches only the semiconductor substrate by a second etching method thereby removing the substrate from the semiconductor layer. | 09-24-2009 |
20090242904 | Semiconductor Light Emitting Apparatus and Optical Print Head - A semiconductor light emitting apparatus is supplied capable of providing a high performance that can optimize simultaneously both an electrical characteristic and a light emitting characteristic. The semiconductor apparatus comprises an anode layer; a cathode layer that has a conductive type different from that of the anode layer; a gate layer that controls an electrical conduction between the anode layer and the cathode layer; an active layer that is set between the anode layer and the cathode layer and emits light through recombination of electron and positive hole; a first cladding layer that is set on one surface of the active layer and has an energy band gap larger than that of the active layer; and a second cladding layer that is set on other surface of the active layer, has an energy band gap larger than that of the active layer and has a conductive type different from that of the first cladding layer, wherein a thickness of the gate layer is or below a mean free path of carriers implanted into the gate layer. | 10-01-2009 |
20100132592 | Method and facility for disposing wet sludge - An object of the present invention is to provide a wet sludge disposal method and facility capable of smoothly transferring wet sludge to a kiln inlet part, or the like, of a dry process kiln, by a low feeding pressure and without substantially increasing the moisture content in the wet sludge. To this end, the present invention is characterized, in a cement clinker manufacturing facility having a preheater ( | 06-03-2010 |
20120286303 | DISPLAY APPARATUS - The present invention supplied a display apparatus using plastic substrate instead of glass substrate, which can solve such problems that the plastic substrate has a low heat conductivity and its heat release performance becomes bad so that it is difficult to obtain stable performance and reliability. In the display apparatus being formed by bonding semiconductor thin film element on a plastic substrate, a thin film metal layer is formed on surface of the semiconductor thin film element for promoting heat release. | 11-15-2012 |