Yusuke Kobayashi
Yusuke Kobayashi, Mishima-Gun JP
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20120126282 | SEALANT FOR OPTICAL SEMICONDUCTORS AND OPTICAL SEMICONDUCTOR DEVICE - The present invention provides a sealant for an optical semiconductor device which has high gas barrier property against corrosive gas, and is less likely to crack or is less likely to peel off even when used in harsh environments. | 05-24-2012 |
20130221400 | ENCAPSULATING AGENT FOR OPTICAL SEMICONDUCTOR DEVICES, AND OPTICAL SEMICONDUCTOR DEVICE USING SAME - Provided is an encapsulant for optical semiconductor devices, which is capable of enhancing the adhesion between a housing and the encapsulant when an optical semiconductor device is encapsulated in the housing, and which is also capable of enhancing the bonding reliability with respect to humidity. The encapsulant for optical semiconductor devices includes: a first organopolysiloxane having an alkenyl group bonded to a silicon atom and an aryl group bonded to a silicon atom, but not having a hydrogen atom bonded to a silicon atom; a second organopolysiloxane having a hydrogen atom bonded to a silicon atom and an aryl group bonded to a silicon atom; a catalyst for hydrosilylation reaction; and an organic compound having a titanium atom. | 08-29-2013 |
20140175505 | SEALING AGENT FOR OPTICAL SEMICONDUCTOR DEVICES, AND OPTICAL SEMICONDUCTOR DEVICE - The present invention provides an encapsulant for optical semiconductor devices, which is capable of suppressing surface tackiness of a cured product and is also capable of enhancing the heat resistance and thermal cycle characteristics of the cured product. An encapsulant for optical semiconductor devices according to the present invention which includes: a first organopolysiloxane which is represented by formula (1A) or formula (1B) and has an alkenyl group and a methyl group bonded to a silicon atom; a second organopolysiloxane which is represented by formula (51A) or formula (51B) and has a hydrogen atom bonded to a silicon atom and a methyl group bonded to a silicon atom; and a catalyst for hydrosilylation reaction, and the content ratios of methyl groups bonded to silicon atoms in the first and second organopolysiloxanes each are 80 mol % or more. | 06-26-2014 |
Yusuke Kobayashi, Matsumoto-City JP
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20130075819 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - A semiconductor device includes an active section for a main current flow and a breakdown withstanding section for breakdown voltage. An external peripheral portion surrounds the active section on one major surface of an n-type semiconductor substrate. The breakdown withstanding section has a ring-shaped semiconductor protrusion, with a rectangular planar pattern including a curved section in each of four corners thereof, as a guard ring. The ring-shaped semiconductor protrusion has a p-type region therein, is sandwiched between a plurality of concavities deeper than the p-type region, and has an electrically conductive film across an insulator film on the surface thereof. Because of this, it is possible to manufacture at low cost a breakdown withstanding structure with which a high breakdown voltage is obtained in a narrow width, wherein there is little drop in breakdown voltage, even when there are variations in a patterning process of a field oxide film. | 03-28-2013 |
20140357026 | PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE - A method for producing a semiconductor device includes an implantation step of performing proton implantation from a rear surface of a semiconductor substrate of a first conductivity type and a formation step of performing an annealing process for the semiconductor substrate in an annealing furnace to form a first semiconductor region of the first conductivity type which has a higher impurity concentration than the semiconductor substrate after the implantation step. In the formation step, the furnace is in a hydrogen atmosphere and the volume concentration of hydrogen is in the range of 6% to 30%. Therefore, it is possible to reduce crystal defects in the generation of donors by proton implantation. In addition, it is possible to improve the rate of change into a donor. | 12-04-2014 |
20150050798 | PRODUCTION METHOD FOR A SEMICONDUCTOR DEVICE - A method for producing a semiconductor device includes providing a semiconductor substrate having a first conductivity type; implanting protons through a rear surface of the semiconductor substrate of the first conductivity type; and forming a first semiconductor region of the first conductivity type in the semiconductor substrate by performing an annealing process in an annealing furnace in a hydrogen atmosphere having a volume concentration of hydrogen that is equal to or greater than 0.5% and less than 4.65%, the first semiconductor region having a higher impurity concentration than that of the semiconductor substrate after the implantation step. The method reduces crystal defects in the generation of donors during proton implantation and improves the rate of change into a donor. | 02-19-2015 |
20150349103 | SEMICONDUCTOR DEVICE - A semiconductor device has mesa form first and second p-type base regions and a floating p-type region provided in a surface layer of an n−-type drift layer. The first p-type base region and floating p-type region are separated by a first trench. The second p-type base region is separated from the floating p-type region by a second trench. The first and second p-type base regions are conductively connected to an emitter electrode. The floating p-type region is in a floating state electrically isolated from the emitter electrode. A first gate electrode is provided via a first gate insulating film inside the first trench. An emitter potential second gate electrode is provided via a second gate insulating film inside the second trench. Therefore, di/dt controllability when turning on the semiconductor device can be increased. | 12-03-2015 |
20160064476 | SEMICONDUCTOR DEVICE - A semiconductor device has a reduced an on-voltage and uses a gate resistance to improve the trade-off relationship between turn-on loss Eon and dV/dt, and turn-on dV/dt controllability. A floating p | 03-03-2016 |
Yusuke Kobayashi, Mie-Ken JP
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20130181275 | MANUFACTURING METHOD OF NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND A NONVOLATILE SEMICONDUCTOR STORAGE DEVICE - A nonvolatile semiconductor storage device has a semiconductor substrate, a gate insulating film formed on the semiconductor substrate, multiple floating gate electrodes formed on the gate insulating film, an inter-electrode insulating film formed on the multiple floating gate electrodes, and word lines formed on the inter-electrode insulating film. The word lines have lower and upper layers containing polysilicon doped with an impurity and are formed with a separating layer between the lower layer and the upper layer. A portion of the separating layer is located between multiple floating gate electrodes, and the height of the lower layer is less than the height of the upper layer. | 07-18-2013 |
Yusuke Kobayashi, Saitama-Shi JP
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20130181727 | CAPACITIVE SENSOR SHEET AND PRODUCTION METHOD THEREOF - A production method of a capacitive sensor sheet, comprising: a film forming step forming of a optically-transparent electroconductive film | 07-18-2013 |
Yusuke Kobayashi, Matsumoto JP
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20140217407 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A donor layer that is formed by performing a heat treatment for a crystal defect formed by proton radiation is provided in an n-type drift layer of an n | 08-07-2014 |
20140319576 | SEMICONDUCTOR DEVICE - In a non-punch-through (NPT) insulated gate bipolar transistor (IGBT), a rear surface structure including a p | 10-30-2014 |
Yusuke Kobayashi, Yokohama-Shi JP
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20150093176 | INK COMPOSITION FOR AQUEOUS INK BALL POINT PEN - Provided are an ink composition for an aqueous ink ball point pen, which contains modified polyvinyl alcohol and at least one selected from boric acid and salts thereof, and an aqueous ink ball point pen charged with the ink composition, wherein the boric acid and the salts thereof are preferably at least one selected from boric acid, alkali metal salts of boric acid and ammonium salts of boric acid. | 04-02-2015 |
20150275000 | INK COMPOSITION FOR AQUEOUS BALLPOINT PEN - Provided is an ink composition for an aqueous ballpoint pen making it possible to draw sharp and fine lines which are less likely to be blurred at an initial part of writing and are written smoothly and which are clear at stop, jump and sweep parts to provide beautiful characters. The ink composition for an aqueous ballpoint pen contains at least water and a colorant and having a dilatant fluid characteristic in at least a part of a region of a shear rate of 1 to 383 s | 10-01-2015 |
Yusuke Kobayashi, Tsukuba-Shi JP
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20150211109 | TARGET FOR MAGNETRON SPUTTERING - A target for magnetron sputtering, comprising metal Co, metal Cr, and an oxide with an atomic ratio of the metal Cr to the total of the metal Co and the metal Cr being less than 25 at %, wherein the target comprises: a non-magnetic metal phase containing metal Co and metal Cr with an atomic ratio of the metal Cr to the total of the metal Co and the metal Cr being 25 at % or more and with an atomic ratio of the metal Co to the total of the metal Co and the other metals being more than 0 at % and 45 at % or less; and a magnetic metal phase containing metal Co, wherein a volume ratio of the oxide to the non-magnetic metal phase is more than 0 and 1.2 or less, and wherein the non-magnetic metal phase and the oxide are mutually dispersed. | 07-30-2015 |
20150214017 | MANUFACTURING METHOD FOR TARGET FOR MAGNETRON SPUTTERING - A manufacturing method for a target for magnetron sputtering, the method comprising the steps of: mixing and dispersing non-magnetic metal powder and oxide powder to obtain a non-magnetic powder mixture, the non-magnetic metal powder containing metal Co and metal Cr with an atomic ratio of the metal Cr to the total of the metal Co and the metal Cr being 25 at % or more and with an atomic ratio of the metal Co to the total of the metal Co and the other metals being 45 at % or less, the oxide powder being mixed at a volume ratio of more than 0 and 1.2 or less with respect to the non-magnetic metal powder; mixing and dispersing the obtained non-magnetic powder mixture and magnetic metal powder containing metal Co to obtain a powder mixture for pressure sintering; and pressure sintering the obtained powder mixture for pressure sintering. | 07-30-2015 |
Yusuke Kobayashi, Mie JP
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20150283962 | WIRE HARNESS - It is an object of the present invention, with regard to a wire harness for being attached together with a sheet-like cover member to a door panel of a vehicle, to realize a simplification and reduction in the number of steps of the installation work and moreover to decrease the weight and cost of the wire harness. A wire harness comprises an electric wire and a sheet-like service hole cover having elasticity for being attached to the inside of the door panel of a vehicle. The electric wire includes an inside wiring section, which extends along a first surface of the service hole cover, and an outside wiring section, which is fed through to a second-surface side, the electric wire being united with the service hole cover in the inside wiring section. | 10-08-2015 |
20150380916 | WIRING MODULE AND METHOD FOR ASSEMBLING WIRING MODULE - It is aimed to improve soundproofing of a wiring module. The wiring module is provided with a sheet-shaped first soundproofing member; a wire harness which contains at least one wire and is disposed at least partially along one main surface of the first soundproofing member, and a second soundproofing member. The second soundproofing member is provided partially to one main surface of the first soundproofing member and holds the wire harness interposed between the first soundproofing member and the second soundproofing member. | 12-31-2015 |
Yusuke Kobayashi, Shiga JP
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20150296771 | OIL-BASED PESTICIDAL SUSPENSION - To provide an oil-based pesticidal suspension which suppresses foaming at the time of preparation of a spray liquid by an organic silicone type surfactant, and which has excellent pesticidal activity with a small amount of an agricultural chemical. | 10-22-2015 |
Yusuke Kobayashi, Kuwana JP
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20160111641 | MEMORY DEVICE AND MANUFACTURING METHOD THEREFOR - According to one embodiment, a memory device includes a substrate, a conductive wire provided above the substrate to extend in a first direction and including an end portion decreases in width toward a distal end, and a contact connected to the conductive wire at least a side surface of the end portion. The end portion includes, in the contact, a first portion having a shortest distance from an outer peripheral surface of the contact and a second portion extending from the first portion and having a distance from the outer peripheral surface of the contact longer than the shortest distance. | 04-21-2016 |
Yusuke Kobayashi, Nasushiobara JP
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20160135789 | ULTRASOUND DIAGNOSIS APPARATUS - According to one embodiment, an ultrasound diagnosis apparatus is configured to generate ultrasound image data of a subject through an ultrasound probe. The ultrasound diagnosis apparatus includes a specifying unit, a transmission/reception condition change unit, and an image generator. The specifying unit specifies a characteristic site, which is included in a scanning range related to the ultrasound image data and has specific acoustic characteristics, based on three-dimensional image data of the subject generated in advance. The transmission/reception condition change unit changes transmission/reception conditions of ultrasound waves based on the acoustic characteristics of the characteristic site. The image generator generates the ultrasound image data based on changed transmission/reception conditions. | 05-19-2016 |