Patent application number | Description | Published |
20080315420 | Metal pad formation method and metal pad structure using the same - A metal pad formation method and metal pad structure using the same are provided. A wider first pad metal is formed together with a first metal. A dielectric layer is then deposited thereon. A first opening and a second opening are formed in the dielectric layer to respectively expose the first metal and the first pad metal. Then, the first opening is filled by W metal to generate a first via. Finally, a second metal and a second pad metal are formed to respectively cover the first via and the first pad metal to generate the metal pad. | 12-25-2008 |
20090029551 | Pad and method for chemical mechanical polishing - A method for chemical-mechanical polishing two adjacent structures of a semiconductor device is provided. The method for mechanical polishing comprising: (a) providing a semiconductor device comprising a recess formed in a surface thereof, a first layer formed over the surface, and a second layer filled with the recess and formed on the first layer; and (b) substantially polishing the first and second layer with a pad and a substantially inhibitor-free slurry, wherein the pad comprising a corrosion inhibitor of the second layer. | 01-29-2009 |
20120313214 | POLYSILICON STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A polysilicon structure and method of forming the polysilicon structure are disclosed, where the method includes a two-step deposition and planarization process. The disclosed process reduces the likelihood of defects such as voids, particularly where polysilicon is deposited in a trench having a high aspect ratio. A first polysilicon structure is deposited that includes a trench liner portion and a first upper portion. The trench liner portion only partially fills the trench, while the first upper portion extends over the adjacent field isolation structures. Next, at least a portion of the first upper portion of the first polysilicon structure is removed. A second polysilicon structure is then deposited that includes a trench plug portion and a second upper portion. The trench is filled by the plug portion, while the second upper portion extends over the adjacent field isolation structures. The second upper portion is then removed. | 12-13-2012 |
20130113031 | KINK POLY STRUCTURE FOR IMPROVING RANDOM SINGLE BIT FAILURE - A memory cell having a kinked polysilicon layer structure, or a polysilicon layer structure with a top portion being narrower than a bottom portion, may greatly reduce random single bit (RSB) failures and may improve high density plasma (HDP) oxide layer fill-in by reducing defects caused by various impurities and/or a polysilicon layer short path. A kinked polysilicon layer structure may also be applied to floating gate memory cells either at the floating gate structure or the control gate structure. | 05-09-2013 |
Patent application number | Description | Published |
20090194259 | VAPOR CHAMBER AND SUPPORTING STRUCTURE THEREOF - In a vapor chamber and a supporting structure thereof, the vapor chamber includes a casing, in which a capillary wick and a supporting structure are accommodated. The supporting structure includes a plate, on which a plurality of channels are disposed at equal intervals and arranged by corresponding to each other. A corrugated piece is formed in each channel and upper and lower sides of the corrugated piece are respectively abutted against the capillary wick, making the capillary wick and inner wall faces of the casing tightly contacted to each other. In addition, a vapor chamber having this kind of supporting structure is provided. Thereby, it is possible to increase the phase-changing amount of the vapor chamber, accelerate the heat-transferring speed, and enhance the heat-conducting performance further. | 08-06-2009 |
20090205812 | ISOTHERMAL VAPOR CHAMBER AND SUPPORT STRUCTURE THEREOF - In an isothermal vapor chamber and its support structure, the isothermal vapor chamber includes a casing, a capillary wick, a support structure and a working fluid. The capillary wick is disposed in the casing. The support structure is contained in the capillary wick for supporting the capillary wick and the support structure includes two side panels and a plurality of wavy plates are connected between the two side panels. The wavy plate is formed by a plurality of wave peak sections and a plurality of wave valley sections, and the wave peak sections of any two adjacent wavy plates are installed alternately with each other, and any two adjacent wavy plates are partitioned to form a partition channel. The working fluid is filled into the casing and flowed through the partition channel for improving the heat conducting efficiency of the isothermal vapor chamber. | 08-20-2009 |
20100006267 | COVERED PLATE-TYPE HEAT PIPE - A compact plate-type heat pipe having a large strength includes a plate-type heat pipe having a vaporized end and a condensed end and a metallic plate-like sleeve. The plate-like sleeve is covered outside the plate-type heat pipe tightly with the vaporized end of the plate-type heat pipe being exposed to the outside. The surface of the vaporized end of the plate-type heat pipe is adhered to the surface of a heat-generating electronic element, so that the heat generated by the heat-generating electronic element can be dissipated quickly. | 01-14-2010 |
20100006268 | VAPOR CHAMBER AND SUPPORTING STRUCTURE OF THE SAME - A vapor chamber includes a casing, the working fluid, a wick structure and a supporting structure. The casing has a hollow room for allowing the working fluid to be filled therein. The wick structure is distributed in the hollow room. The supporting structure abuts against an inside surface of the wick structure. The supporting structure includes side plates and a plurality of wavelike pieces connected between the side plates. Each of the wavelike pieces is constituted of a plurality of crests and troughs. The crests of any two neighboring wavelike pieces are arranged in an alternating manner. A penetrating hole is provided at the crests and the troughs respectively. The working fluid flows through the separated passages and the penetrating holes. Via the above arrangement, the heat-conducting efficiency of the vapor chamber can be enhanced. | 01-14-2010 |
20110315351 | VAPOR CHAMBER HAVING COMPOSITE SUPPORTING STRUCTURE - A vapor chamber having a composite supporting structure includes a flat sealed casing; a wick structure, a working fluid and a composite supporting structure. The composite supporting structure has a waved supporting rack and at least one supporting pillar. The waved supporting rack is configured to support upper and lower inner walls of the flat sealed casing. The waved supporting rack has plural separated channels for allowing vapor of the working fluid to flow through. Both ends of the at least one supporting pillar are respectively connected to the flat sealed casing or the wick structure. With this arrangement, compressive strength and tensile strength of the vapor chamber can be increased simultaneously without obstructing the circulation of liquid/vapor phases of the working fluid and reducing the thermal-conducting efficiency thereof. | 12-29-2011 |
20130199757 | HEAT-DISSIPATING MODULE HAVING LOOP-TYPE VAPOR CHAMBER - A heat-dissipating module having a loop-type vapor chamber includes a heat-dissipating body, a loop-type vapor chamber, and a heat-conducting medium. The loop-type vapor chamber is completely covered by the heat-dissipating body. The loop-type vapor chamber includes a loop body, a wick structure and a supporting structure. The loop body includes a bottom plate and a cover plate. A vacuum chamber is formed between the bottom plate and the cover plate. The wick structure is arranged on inner surfaces of the cover plate and the bottom plate. The supporting structure abuts the wick structure toward the cover plate and the bottom plate. The loop-type vapor chamber is tightly connected to the heat-dissipating body via the heat-conducting medium. | 08-08-2013 |
Patent application number | Description | Published |
20140252659 | SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF - A semiconductor structure includes a wafer, at least one nonmetal oxide layer, a pad, a passivation layer, an isolation layer, and a conductive layer. The wafer has a first surface, a second surface, a third surface, a first stage difference surface connected between the second and third surfaces, and a second stage difference surface connected between the first and third surfaces. The nonmetal oxide layer is located on the first surface of the wafer. The pad is located on the nonmetal oxide layer and electrically connected to the wafer. The passivation layer is located on the nonmetal oxide layer. The isolation layer is located on the passivation layer, nonmetal oxide layer, the first, second and third surfaces of the wafer, and the first and second stage difference surfaces of the wafer. The conductive layer is located on the isolation layer and electrically contacts the pad. | 09-11-2014 |
20150340403 | MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE - A manufacturing method of a semiconductor structure includes the following steps. A temporary bonding layer is used to adhere a carrier to a first surface of a wafer. A second surface of the wafer is adhered to an ultraviolet tape on a frame, and the temporary bonding layer and the carrier are removed. A protection tape is adhered to the first surface of the wafer. An ultraviolet light is used to irradiate the ultraviolet tape. A dicing tape is adhered to the protection tape and the frame, and the ultraviolet tape is removed. A first cutter is used to dice the wafer from the second surface of the wafer, such that plural chips and plural gaps between the chips are formed. A second cutter with a width smaller than the width of the first cutter is used to cut the protection tape along the gaps. | 11-26-2015 |
Patent application number | Description | Published |
20090115369 | PORTABLE ELECTRONIC APPARATUS AND CIRCUIT AND METHOD FOR CHARGING RECHARGEABLE BATTERY THEREOF - A portable electronic apparatus capable of dynamically adjusting a charging current includes a memory unit, a memory controlling unit, a detecting unit, a current-adjusting unit and a rechargeable battery. The memory controlling unit is coupled to the memory unit for reading/writing the data of the memory unit. The detecting unit is coupled to the memory controlling unit for detecting the portable electronic apparatus to determine whether or not the portable electronic apparatus executes any operation, for example, reading/writing data or playing music and thereby generating a detection result. The current-adjusting unit is coupled to the detecting unit for correspondingly adjusting the charging current according to the detection result. The rechargeable battery is coupled to the current-adjusting unit for receiving the charging current for charging. | 05-07-2009 |
20120153891 | PORTABLE ELECTRONIC APPARATUS AND CIRCUIT AND METHOD FOR CHARGING RECHARGEABLE BATTERY THEREOF - In a method of providing operating current to a portable electronic apparatus, a first connection terminal of the portable electronic apparatus is connected to a second connection terminal of a host, and interface type of the second connection terminal is determined. If the interface type is USB 2.0, the host provides a first operating current to the portable electronic apparatus for performing data read/write, and an internal rechargeable battery of the portable electronic apparatus provides a second operating current to the portable electronic apparatus. If the interface type is USB 3.0, the host provides a third operating current to the portable electronic apparatus for performing data read/write, and the third operating current selectively performs a charge process on the rechargeable battery. If the interface type is Wi-Fi, the rechargeable battery provides a fourth operating current to the portable electronic apparatus. | 06-21-2012 |