Patent application number | Description | Published |
20090012945 | SYSTEM FOR EXECUTING A QUERY HAVING MULTIPLE DISTINCT KEY COLUMNS - A system and computer readable medium for executing a query to access data stored in a database, wherein the query includes a plurality of DISTINCT keys, is disclosed. The system and computer readable medium includes a capture module for identifying each of the plurality of DISTINCT keys in the query and a sort module coupled to the capture module for determining if more than one sort is needed to execute the query, performing a first DISTINCT operation on a first DISTINCT key of the plurality of DISTINCT keys, storing data fetched from the first DISTINCT operation in a master workfile only if more than one sort process is needed to execute the query, and utilizing the master workfile to perform subsequent DISTINCT operations on the other of the plurality of DISTINCT keys. | 01-08-2009 |
20110278587 | Fast Annealing for GaN LEDs - Methods of performing fast thermal annealing in forming GaN light-emitting diodes (LEDs) are disclosed, as are GaN LEDs formed using fast thermal annealing. An exemplary method includes forming a GaN multilayer structure having a n-GaN layer and a p-GaN layer that sandwich an active layer. The method includes performing fast thermal annealing of the p-GaN layer using either a laser or a flash lamp. The method further includes forming a transparent conducting layer atop the GaN multilayer structure, and adding a p-contact to the transparent conducting layer and a n-contact to the n-GaN layer. The resultant GaN LEDs have enhanced output power, lower turn-on voltage and reduced series resistance. | 11-17-2011 |
20110309374 | Fast thermal annealing of GaN LEDs - Methods of performing fast thermal annealing in forming GaN light-emitting diodes (LEDs) are disclosed, as are GaN LEDs formed using fast thermal annealing having a time duration of 10 seconds or faster. An exemplary method includes forming a GaN multilayer structure having a n-GaN layer and a p-GaN layer that sandwich an active layer. The method includes performing fast thermal annealing of the p-GaN layer using either a laser or a flash lamp. The method further includes forming a transparent conducting layer atop the GaN multilayer structure, and adding a p-contact to the transparent conducting layer and a n-contact to the n-GaN layer. The resultant GaN LEDs have enhanced output power, lower turn-on voltage and reduced series resistance. | 12-22-2011 |
20120226693 | DYNAMIC SELECTION OF OPTIMAL GROUPING SEQUENCE AT RUNTIME FOR GROUPING SETS, ROLLUP AND CUBE OPERATIONS IN SQL QUERY PROCESSING - A method, apparatus, and article of manufacture for optimizing a query in a computer system. During compilation of the query, a GROUP BY clause with one or more GROUPING SETS, ROLLUP or CUBE operations is maintained in its original form until after query rewrite. The GROUP BY clause with the GROUPING SETS, ROLLUP or CUBE operations is then translated into a plurality of levels having one or more grouping sets. After compilation of the query, a grouping sets sequence is dynamically determined for the GROUP BY clause with the GROUPING SETS, ROLLUP or CUBE operations based on intermediate grouping sets, in order to optimize the grouping sets sequence. The execution of the grouping sets sequence is optimized by selecting a smallest grouping set from a previous one of the levels as an input to a grouping set on a next one of the levels. Finally, a UNION ALL operation is performed on the grouping sets. | 09-06-2012 |
20130196455 | TWO-BEAM LASER ANNEALING WITH IMPROVED TEMPERATURE PERFORMANCE - Systems and methods are disclosed for performing laser annealing in a manner that reduces or minimizes wafer surface temperature variations during the laser annealing process. The systems and methods include annealing the wafer surface with first and second laser beams that represent preheat and anneal laser beams having respective first and second intensities. The preheat laser beam brings the wafer surface temperate close to the annealing temperature and the anneal laser beam brings the wafer surface temperature up to the annealing temperature. The anneal laser beam can have a different wavelength, or the same wavelength but different orientation relative to the wafer surface. Reflectivity maps of the wafer surface at the preheat and anneal wavelengths are measured and used to select first and second intensities that ensure good anneal temperature uniformity as a function of wafer position. | 08-01-2013 |
20140004627 | Two-beam laser annealing with improved temperature performance | 01-02-2014 |
20140057457 | Non-melt thin-wafer laser thermal annealing methods - Methods of annealing a thin semiconductor wafer are disclosed. The methods allow for high-temperature annealing of one side of a thin semiconductor wafer without damaging or overheating heat-sensitive electronic device features that are either on the other side of the wafer or embedded within the wafer. The annealing is performed at a temperature below the melting point of the wafer so that no significant dopant redistribution occurs during the annealing process. The methods can be applied to activating dopants or to forming ohmic contacts. | 02-27-2014 |
20140097171 | Ultrafast laser annealing with reduced pattern density effects in integrated circuit fabrication - Systems and methods for performing ultrafast laser annealing in a manner that reduces pattern density effects in integrated circuit manufacturing are disclosed. The method includes scanning at least one first laser beam over the patterned surface of a substrate. The at least one first laser beam is configured to heat the patterned surface to a non-melt temperature T | 04-10-2014 |
20140131723 | LASER ANNEALING OF GAN LEDS WITH REDUCED PATTERN EFFECTS - The disclosure is directed to laser annealing of GaN light-emitting diodes (LEDs) with reduced pattern effects. A method includes forming elongate conductive structures atop either an n-GaN layer or a p-GaN layer of a GaN LED structure, the elongate conductive structures having long and short dimensions, and being spaced apart and substantially aligned in the long dimensions. The method also includes generating a P-polarized anneal laser beam that has an anneal wavelength that is greater than the short dimension. The method also includes irradiating either the n-GaN layer or the p-GaN layer of the GaN LED structure through the conductive structures with the P-polarized anneal laser beam, including directing the anneal laser beam relative to the conductive structures so that the polarization direction is perpendicular to the long dimension of the conductive structures. | 05-15-2014 |