Patent application number | Description | Published |
20100006423 | MAGNETIC FIELD GENERATION CONTROL UNIT AND MAGNETRON SPUTTERING APPARATUS AND METHOD USING THE SAME - A magnetic field generation control unit and a magnetron sputtering apparatus and method using the magnetic field generation control circuit. The magnetic field generation control unit includes a magnetic field generator for providing a specific magnetic field to a target consisting of a metal material to be deposited on a substrate, and a magnetic field generator control module electrically connected with the magnetic field generator, receiving an electrical signal from outside, and selectively supplying a current capable of generating the magnetic field to the magnetic field generator. The target is prevented from being magnetized when a sputtering process is not performed, and the magnetic field is generated from the target when the process is performed. Consequently, it is possible to perform uniform deposition on the substrate. | 01-14-2010 |
20100006424 | MAGNETRON UNIT MOVING APPARATUS FOR PREVENTING MAGNETIZATION AND MAGNETRON SPUTTERING EQUIPMENT HAVING THE SAME - A magnetron unit moving apparatus for preventing magnetization and magnetron sputtering equipment having the same. The magnetron unit moving apparatus includes a magnetron unit disposed adjacent to a target, to generate a specific magnetic field, and a movement unit to space the magnetron unit and the target apart such that a strength of a magnetic field generated over the target is within a predetermined reference strength range. It is possible to space the target and the magnetron unit apart so as to prevent the target from being magnetized when a process is not performed. | 01-14-2010 |
20100040991 | IN-LINE ANNEALING APPARATUS AND METHOD OF ANNEALING SUBSTRATE USING THE SAME - An in-line annealing apparatus and a method of annealing a substrate using the in-line annealing apparatus in which a plurality of heating devices provide a transportation path of a substrate and heat the substrate transported along the transportation path to a crystallization temperature, and an instantaneous high-temperature annealing unit heats the substrate positioned in the transportation path between the heating devices to a instantaneous annealing temperature. The in-line annealing apparatus and the method of annealing a substrate using the same provide a highly efficient annealing process that can be performed at various temperatures including a high temperature of 700° C. or higher. | 02-18-2010 |
20100224881 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance. | 09-09-2010 |
20100224883 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME - A thin film transistor (TFT) and an organic light emitting diode (OLED) display device. The TFT and the OLED display device include a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate electrode insulated from the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode, and source and drain electrodes insulated from the gate electrode and partially connected to the semiconductor layer, wherein the semiconductor layer is formed from a polycrystalline silicon layer crystallized by a metal catalyst and the metal catalyst is removed by gettering using an etchant. In addition, the OLED display device includes an insulating layer disposed on the entire surface of the substrate, a first electrode disposed on the insulating layer and electrically connected to one of the source and drain electrodes, an organic layer, and a second electrode. | 09-09-2010 |
20100227060 | ATOMIC LAYER DEPOSITION APPARATUS AND METHOD OF FABRICATING ATOMIC LAYER USING THE SAME - An atomic layer deposition apparatus includes a chamber, a vacuum pump to control a pressure in the chamber, a gas supply unit to supply a reaction gas into the chamber, a substrate holder disposed between the vacuum pump and the gas supply unit and having a heater, a mask assembly disposed between the substrate holder and the gas supply unit and having a cooling path to move coolant, and a coolant source to supply the coolant into the cooling path. The mask assembly is positioned a first distance from a substrate, and coolant is supplied into the cooling path of the mask assembly. The substrate is heated using the heater of the substrate holder, a pressure of the chamber is controlled using the vacuum pump, and reaction gasses are sequentially supplied through the gas supply unit. | 09-09-2010 |
20100227443 | METHOD OF FORMING POLYCRYSTALLINE SILICON LAYER - A method of forming a polycrystalline silicon layer includes forming an amorphous silicon layer on a substrate by chemical vapor deposition using a gas including a silicon atom and hydrogen gas, and crystallizing the amorphous silicon layer into a polycrystalline silicon layer using a crystallization-inducing metal. The resultant polycrystalline silicon layer has an improved charge mobility. | 09-09-2010 |
20100227458 | METHOD OF FORMING POLYCRYSTALLINE SILICON LAYER AND ATOMIC LAYER DEPOSITION APPARATUS USED FOR THE SAME - A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer. | 09-09-2010 |
20100263594 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus that forms thin films on a plurality of substrates and thermally processes the substrates, by uniformly heating the substrates. The substrate processing apparatus includes a processing chamber, a boat in which substrates are stacked, an external heater located outside of the processing chamber, a feeder to move the boat into and out of the processing chamber, a lower heater located below the feeder, and a central heater located in the center of the boat. | 10-21-2010 |
20110008540 | CANISTER FOR DEPOSITION APPARATUS, AND DEPOSITION APPARATUS AND METHOD USING THE SAME - A deposition apparatus, and a canister for the deposition apparatus capable of maintaining a predetermined amount of source material contained in a reactive gas supplied to a deposition chamber when the source material is deposited on a substrate by atomic layer deposition includes a main body, a source storage configured to store a source material, a heater disposed outside the main body, and a first feed controller configured to control the source material supplied to the main body from the source storage. | 01-13-2011 |
20110041767 | METAL CAPTURING APPARATUS AND ATOMIC LAYER DEPOSITION APPARATUS HAVING THE SAME - A metal capturing apparatus and an atomic layer deposition apparatus, which are capable of discharging an exhaust gas from a process chamber, in which a metal atomic layer is deposited on a substrate using a reaction gas containing a metal catalyst, without a scrubber, and easily reusing the metal catalyst contained in the exhaust gas. The metal capturing apparatus includes a capturing chamber having a capturing space, a capturing plate disposed at one side of the capturing chamber and partially inserted into the capturing chamber, a refrigerant source feeding a refrigerant cooling the capturing plate, and an attachment unit attaching the capturing plate to the capturing chamber. The atomic layer deposition apparatus includes a process chamber, a vacuum pump connected to an exhaust port of the process chamber, and a metal capturing apparatus disposed between the process chamber and the vacuum pump. | 02-24-2011 |
20110083960 | SPUTTERING APPARATUS - A sputtering apparatus that is capable of uniformly depositing an ultra-low concentration metal catalyst on a substrate having an amorphous silicon layer in order to crystallize the amorphous silicon layer. The sputtering apparatus includes a process chamber, a metal target located inside the process chamber, a substrate holder located opposite the metal target, and a vacuum pump connected with an exhaust pipe of the process chamber. An area of the metal target is more than 1.3 times an area of a substrate placed on the substrate holder. | 04-14-2011 |
20110100973 | APPARATUS FOR THERMALLY PROCESSING SUBSTRATE - An apparatus for thermally processing a plurality of substrates including a process chamber into which a boat having a plurality of substrates stacked thereon is loaded, and a heater chamber separate from the process chamber and having a plurality of heaters to apply heat to the process chamber. Here, the heaters are installed to correspond to all sides of the plurality of substrates. Therefore, it is possible to minimize a temperature distribution in the process chamber and uniformly supply heat to the entire region of the plurality of substrates. | 05-05-2011 |
20110120859 | SPUTTERING APPARATUS - Provided is a sputtering apparatus which deposits a metal catalyst on an amorphous silicon layer at an extremely low concentration in order to crystallize amorphous silicon, and particularly minimizes non-uniformity of the metal catalyst caused by a pre-sputtering process without reducing process efficiency. This sputtering apparatus improves the uniformity of the metal catalyst deposited on the amorphous silicon layer at an extremely low concentration. The sputtering apparatus includes a process chamber having first and second regions, a metal target located inside the process chamber, a target transfer unit moving the metal target and having a first shield for controlling a traveling direction of a metal catalyst discharged from the metal target, and a substrate holder disposed in the second region to be capable of facing the metal target. A distance difference between a linear distance, which is a distance between a substrate loaded on the substrate holder and the metal target, and a length of the first shield is less than 3 cm. | 05-26-2011 |
20110121309 | METHOD OF FABRICATING POLYSILICON LAYER, THIN FILM TRANSISTOR, ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME - A method of fabricating an organic light emitting diode (OLED) display device having a thin film transistor including a polysilicon layer. The method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer. The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer. | 05-26-2011 |
20110220878 | Thin film transistor and method of manufacturing the same - A thin film transistor (TFT) includes a substrate, and an active region on the substrate including source and drain regions at opposing ends of the active region, a lightly doped region adjacent to at least one of the source region and the drain region, a plurality of channel regions, and a highly doped region between two channel regions of the plurality of channel regions. The TFT includes a gate insulation layer on the active region, and a multiple gate electrode having a plurality of gate electrodes on the gate insulation layer, the plurality of channel regions being disposed below corresponding gate electrodes, and the source region and the drain region being disposed adjacent to outermost portions of the multiple gate electrode. The TFT includes a first interlayer insulation layer on the multiple gate electrode, and source and drain electrodes extending through the first interlayer insulation layer and contacting the respective source and drain regions. | 09-15-2011 |
20110227078 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A display device including: a substrate; a first semiconductor layer disposed on the substrate; a second semiconductor layer disposed on the substrate and adjacent to the first semiconductor layer; a first insulation layer disposed on both the first semiconductor layer and the second semiconductor layer, the first insulation layer including a first opening forming a space between the first semiconductor layer and the second semiconductor layer; and a second insulation layer disposed on the first insulation layer and that fills the first opening. | 09-22-2011 |
20110227079 | THIN FILM TRANSISTOR, DISPLAY DEVICE THEREOF, AND MANUFACTURING METHOD THEREOF - A thin film transistor including: an active layer formed on a substrate; a gate insulating layer pattern formed on a predetermined region of the active layer; a gate electrode formed on a predetermined region of the gate insulating layer pattern; an etching preventing layer pattern covering the gate insulating layer pattern and the gate electrode; and a source member and a drain member formed on the active layer and the etching preventing layer pattern. | 09-22-2011 |
20110233529 | Substrate including thin film transistor, method of manufacturing the substrate, and organic light emitting display apparatus including the substrate - A substrate including a thin film transistor, the substrate including an active layer disposed on the substrate, the active layer including a channel area and source and drain areas, a gate electrode disposed on the active layer, the channel area corresponding to the gate electrode, a gate insulating layer interposed between the active layer and the gate electrode, an interlayer insulating layer disposed to cover the active layer and the gate electrode, the interlayer insulating layer having first and second contact holes partially exposing the active layer, source and drain electrodes disposed on the interlayer insulating layer, the source and drain areas corresponding to the source and drain electrodes, and ohmic contact layers, the ohmic contact layers being interposed between the interlayer insulating layer and the source and drain electrodes, and contacting the source and drain areas through the first and second contact holes. | 09-29-2011 |
20110248276 | THIN FILM TRANSISTOR, METHOD OF MANUFACTURING ACTIVE LAYERS OF THE THIN FILM TRANSISTOR, AND DISPLAY DEVICE - A thin film transistor including a first polycrystalline semiconductor layer disposed on a substrate, a second polycrystalline semiconductor layer disposed on the first polycrystalline semiconductor layer, and metal catalysts configured to adjoin the first polycrystalline semiconductor layer and spaced apart from one another at specific intervals. | 10-13-2011 |
20110248277 | METHOD OF CRYSTALIZING AMORPHOUS SILICON LAYER, METHOD OF MANUFACTURING THIN FILM TRANSISTOR USING THE SAME, AND THIN FILM TRANSISTOR USING THE MANUFACTURING METHOD - A method of crystallizing an amorphous silicon layer, a method of manufacturing a thin film transistor using the same, and a thin film transistor using the manufacturing method, the crystallizing method including: forming an amorphous silicon layer; positioning crystallization catalyst particles on the amorphous silicon layer to be separated from each other; selectively removing the crystallization catalyst particles from a portion of the amorphous silicon layer; and crystallizing the amorphous silicon layer by a heat treatment. | 10-13-2011 |
20110253987 | POLYSILICON LAYER, METHOD OF PREPARING THE POLYSILICON LAYER, THIN FILM TRANSISTOR USING THE POLYSILICON LAYER, AND ORGANIC LIGHT EMITTING DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR - A method of crystallizing a silicon layer. An amorphous silicon layer is formed on a buffer layer on a substrate. A catalyst metal layer is formed on the amorphous silicon layer to have a density of from about 10 | 10-20-2011 |
20110263107 | METHOD OF FORMING POLYCRYSTALLINE SILICON LAYER AND ATOMIC LAYER DEPOSITION APPARATUS USED FOR THE SAME - A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer. | 10-27-2011 |
20110300674 | Method of crystallizing silicon layer and method of forming a thin film transistor using the same - A method of crystallizing a silicon layer and a method of manufacturing a thin film transistor using the same, the method of crystallizing the silicon layer including forming an amorphous silicon layer on a substrate; performing a hydrophobicity treatment on a surface of the amorphous silicon layer so as to obtain a hydrophobic surface thereon; forming a metallic catalyst on the amorphous silicon layer that has been subjected to the hydrophobicity treatment; and heat-treating the amorphous silicon layer including the metallic catalyst thereon to crystallize the amorphous silicon layer into a polycrystalline silicon layer. | 12-08-2011 |
20110312135 | Method of forming a polycrystalline silicon layer and method of manufacturing thin film transistor - A method of crystallizing a silicon layer and a method of manufacturing a TFT, the method of crystallizing a silicon layer including forming a catalyst metal layer on a substrate; forming a catalyst metal capping pattern on the catalyst metal layer; forming a second amorphous silicon layer on the catalyst metal capping pattern; and heat-treating the second amorphous silicon layer to form a polycrystalline silicon layer. | 12-22-2011 |
20120000425 | Apparatus for Processing Substrate - A substrate processing apparatus that simultaneously forms thin films on a plurality of substrates and performs heat treatment includes: a plurality of substrate holders, each including a substrate support that supports a substrate and a first gas pipe having one or a plurality of injection holes; a boat where the plurality of substrate holders are stacked and including a second gas pipe connected with the first gas pipe of each of the substrate holders; a process chamber providing a space in which the substrates stacked in the boat are processed; a conveying unit that carries the boat into/out of the process chamber; a first heating unit disposed outside the process chamber; and a gas supply unit including a third gas pipe connected with the second gas pipe and supplying a heated or cooled gas into the second gas pipe. | 01-05-2012 |
20120000986 | CANISTER FOR DEPOSITION APPARATUS AND DEPOSITION APPARATUS USING SAME - A canister for a deposition apparatus and a deposition apparatus using the same, and more particularly, a canister for a deposition apparatus that can provide a uniform amount of source material contained in a reaction gas supplied into a deposition chamber and improve safety in the supply of the source material, and a deposition apparatus using the canister. The deposition apparatus includes a deposition chamber; a canister supplying a reaction gas into the deposition chamber; and a carrier gas supplier for supplying a carrier gas into the canister, in which the canister includes a main body, a heating unit heating the main body and a temperature measuring unit disposed under the main body. | 01-05-2012 |
20120056187 | METHOD OF FORMING POLYCRYSTALLINE SILICON LAYER, AND THIN FILM TRANSISTOR AND ORGANIC LIGHT EMITTING DEVICE INCLUDING THE POLYCRYSTALLINE SILICON LAYER - A method of forming a polycrystalline silicon layer includes forming a first amorphous silicon layer and forming a second amorphous silicon layer such that the first amorphous silicon layer and the second amorphous silicon layer have different film qualities from each other, and crystallizing the first amorphous silicon layer and the second amorphous silicon layer using a metal catalyst to form a first polycrystalline silicon layer and a second polycrystalline silicon layer. A thin film transistor includes the polycrystalline silicon layer formed by the method and an organic light emitting device includes the thin film transistor. | 03-08-2012 |
20120056189 | THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE USING THE SAME - A thin film transistor includes a substrate, a semiconductor layer provided on the substrate and crystallized by using a metal catalyst, a gate electrode insulated from and disposed on the semiconductor layer, and a getter layer disposed between the semiconductor layer and the gate electrode and formed with a metal oxide having a diffusion coefficient that is less than that of the metal catalyst in the semiconductor layer. | 03-08-2012 |
20120298500 | SEPARATED TARGET APPARATUS FOR SPUTTERING AND SPUTTERING METHOD USING THE SAME - A separated target apparatus and a sputtering method using the separated target apparatus. The separated target apparatus includes a plurality of separated targets that are adhered to a base plate and that form a regular array, wherein gaps between the plurality of separated targets are disposed within an angle between a first direction that is a direction of the regular array, and a second direction perpendicular to the first direction. When sputtering is performed by using the separated target apparatus having the aforementioned structure, it is possible to obtain an uniform deposition quality on a substrate by using the separated targets that are easily manufactured and handled, and thus it is possible to make brightness of a display apparatus be uniform on an entire screen. | 11-29-2012 |
20120298501 | SEPARATED TARGET APPARATUS FOR SPUTTERING AND SPUTTERING METHOD USING THE SAME - A separated target apparatus includes a base plate; and a plurality of source units including a plurality of separated targets that are adhered on one surface of the base plate and that form a regular array, and a plurality of magnets that are adhered on the other surface of the base plate and that make a pair with the plurality of separated targets. The plurality of source units are arrayed in parallel at an angle between a first direction that is a direction of the regular array and a second direction that is perpendicular to the first direction. Sputtering is performed by using the separated target apparatus having the aforementioned structure. | 11-29-2012 |
20120299007 | THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THIN FILM TRANSISTOR, AND ORGANIC LIGHT EMITTING DIODE DISPLAY - There is provided a thin film transistor including an active layer on a substrate (the active layer including polysilicon and a metal catalyst dispersed in the polysilicon, a source area, a drain area, and a channel area), a gate electrode disposed on the channel area of the active layer, a source electrode electrically connected to the source area, and a drain electrode electrically connected to the drain area, wherein the gate electrode, the source area, and the drain area of the active layer include metal ions, the source area and the drain area are separate from each other, and the channel is disposed between the source area and the drain area. | 11-29-2012 |
20120329001 | CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, AND HEAT TREATMENT SYSTEM - A crystallization apparatus includes a receiving unit supporting an object to be processed, a first heating unit adjacent the receiving unit, the first heating unit configured to heat the object to be processed to a first temperature during a first period, and a second heating unit adjacent the first heating unit, the second heating unit configured to heat the object to be processed to a second temperature, higher than the first temperature, during a second period that is shorter than the first period. | 12-27-2012 |
20130122664 | METHOD OF MANUFACTURING SUBSTRATE INCLUDING THIN FILM TRANSISTOR - A substrate including a thin film transistor, the substrate including an active layer disposed on the substrate, the active layer including a channel area and source and drain areas, a gate electrode disposed on the active layer, the channel area corresponding to the gate electrode, a gate insulating layer interposed between the active layer and the gate electrode, an interlayer insulating layer disposed to cover the active layer and the gate electrode, the interlayer insulating layer having first and second contact holes partially exposing the active layer, source and drain electrodes disposed on the interlayer insulating layer, the source and drain areas corresponding to the source and drain electrodes, and ohmic contact layers, the ohmic contact layers being interposed between the interlayer insulating layer and the source and drain electrodes, and contacting the source and drain areas through the first and second contact holes. | 05-16-2013 |
20130143378 | METHOD OF FORMING POLYSILICON LAYER AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR USING THE POLYSILICON LAYER - In one aspect, a method of forming a polysilicon (poly-Si) layer and a method of manufacturing a thin film transistor (TFT) using the poly-Si layer is provided. In one aspect, the method of forming a polysilicon (poly-Si) layer includes forming an amorphous silicon (a-Si) layer on a substrate in a chamber; cleaning the chamber; removing fluorine (F) generated while cleaning the chamber; forming a metal catalyst layer for crystallization, on the a-Si layer; and crystallizing the a-Si layer into a poly-Si layer by performing a thermal processing operation. | 06-06-2013 |
20130200422 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode display includes a substrate, an organic light emitting diode provided on the substrate and including a first electrode, an organic emission layer, and a second electrode, a packed layer on the organic light emitting diode, and a protective layer on the packed layer, the protective layer including at least one of a graphene oxide and a graphene nitride. | 08-08-2013 |
20130228760 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance. | 09-05-2013 |
20130302535 | SPUTTER DEVICE AND METHOD FOR DEPOSITING THIN FILM USING THE SAME - A sputter device includes a cathode portion including a target support portion coupled to a front surface of a cathode main body, a target being mounted on the front surface of the cathode main body and being supported by the target support portion, an anode portion including an anode coupled to an anode main body, the anode main body surrounding a side and a bottom of the cathode portion, and the anode covering the target support portion and an edge of the target, an internal insulator between the cathode portion and the anode main body, an electrode insulator between the anode and each of the target support portion and the edge of the target, and a power source portion connected to the cathode portion and the anode portion. | 11-14-2013 |
20140045305 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A display device including: a substrate; a first semiconductor layer disposed on the substrate; a second semiconductor layer disposed on the substrate and adjacent to the first semiconductor layer; a first insulation layer disposed on both the first semiconductor layer and the second semiconductor layer, the first insulation layer including a first opening forming a space between the first semiconductor layer and the second semiconductor layer; and a second insulation layer disposed on the first insulation layer and that fills the first opening. | 02-13-2014 |
20140308445 | CANISTER FOR DEPOSITION APPARATUS, AND DEPOSITION APPARATUS AND METHOD USING THE SAME - A deposition apparatus, and a canister for the deposition apparatus capable of maintaining a predetermined amount of source material contained in a reactive gas supplied to a deposition chamber when the source material is deposited on a substrate by atomic layer deposition includes a main body, a source storage configured to store a source material, a heater disposed outside the main body, and a first feed controller configured to control the source material supplied to the main body from the source storage. | 10-16-2014 |
20140363936 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME - A thin film transistor (TFT) and an organic light emitting diode (OLED) display device. The TFT and the OLED display device include a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate electrode insulated from the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode, and source and drain electrodes insulated from the gate electrode and partially connected to the semiconductor layer, wherein the semiconductor layer is formed from a polycrystalline silicon layer crystallized by a metal catalyst and the metal catalyst is removed by gettering using an etchant. In addition, the OLED display device includes an insulating layer disposed on the entire surface of the substrate, a first electrode disposed on the insulating layer and electrically connected to one of the source and drain electrodes, an organic layer, and a second electrode. | 12-11-2014 |