Patent application number | Description | Published |
20100085291 | LCD with two-dot inversion - An LCD with two-dot inversion includes plural gate lines for transmitting gate driving signals, plural data lines for transmitting data driving signals, and a pixel array. The pixel array includes plural pixels. The plural pixels display frames according to the received gate driving signals and data driving signals. A first data line of the plural data lines is coupled to a first column of pixels and a second column of pixels. The plural data lines are curves with several bends. The difference between the numbers of the first and the second columns is at least two. | 04-08-2010 |
20100134463 | Driving Method of Display Panel with Half-Source-Driving Structure - An exemplary driving method of a display panel with half-source-driving structure is provided. The display panel includes at least one pixel each using a capacitor to store a voltage. A terminal of the capacitor is adapted to receive a display data inputted from a data line, and another terminal of the capacitor is electrically coupled to a common electrode. The driving method includes: obtaining a direct current power signal; coupling an alternating current signal with the direct current power signal to generate a common electrode driving signal; and applying the common electrode driving signal to the common electrode. A rising time of a rising edge and a falling time of a falling edge of the common electrode driving signal are modified to improve a V-line mura phenomenon of the display panel. | 06-03-2010 |
20100295764 | DISPLAY DEVICE - A display device includes a substrate, gate lines, data lines, data signal links, and contact vias. The substrate includes a display region, and a peripheral region surrounding the display region. The gate lines, data lines, data signal links, and contact vias are disposed within the display region of the substrate. The gate lines cross the data lines. Each of the data signal links is disposed between adjacent gate lines. Each of the contact vias is disposed between each of the data signal links and a corresponding data line, such that each of the data signal links is electrically connected with the corresponding data line. | 11-25-2010 |
20120104620 | CONTACT PAD ARRAY - A contact pad array is provided. The contact pad array includes a plurality of first contact pads and a plurality of second contact pads. The first contact pads are arranged along the first direction. Each first contact pad includes two first lengthwise sides and two widthwise sides. The second contact pads are arranged along the first direction. Each second contact pad includes two second lengthwise sides and two second widthwise sides. The length of the second lengthwise side is substantially shorter than that of the first lengthwise side, and the width of the second widthwise side is substantially larger than that of the first widthwise side. The projection of the first widthwise side of each first contact pad on the first direction is completely within the projection of the second widthwise side of the corresponding second contact pad on the first direction. | 05-03-2012 |
20120306833 | DISPLAY DEVICE AND DRIVING METHOD THEREOF - A method for driving a display panel includes in a first time slot of a polarity inversion period turning on a plurality of first pixels in a first row via a first scan line, and providing a common voltage with a first potential; in a second time slot of the polarity inversion period turning on a plurality of second pixels in the first row via a second scan line, and providing the common voltage with a second potential; in a third time slot of the polarity inversion period turning on a plurality of first pixels in a second row via a third scan line, and providing the common voltage with the second potential; and in a fourth time slot of the polarity inversion period turning on a plurality of second pixels in the second row via a fourth scan line, and providing the common voltage with the first potential. | 12-06-2012 |
20130127798 | DRIVING METHOD FOR DISPLAY PANEL BY DIVIDING SCAN LINES INTO GROUPS AND ADJUSTING SCAN SEQUENCES - A driving method for a display panel is provided. The display panel includes a plurality of data lines, a plurality of scan lines, and a plurality of pixel units coupled to the data lines and the scan lines. The data lines are arranged to input an image data to the pixel units. The scan lines have groups of scan lines, and pixel units coupled to each group of scan lines are coupled to the same data line. The driving method includes: during a first and a second frame, scanning the scan lines one by one in a first and a second scan sequence to enable the pixel units, respectively, wherein the second scan sequence is different from the first scan sequence, and the scan sequence of each group of scan lines in the first scan sequence is different from that in the second scan sequence. | 05-23-2013 |
20130155035 | METHOD FOR DRIVING PIXEL CIRCUITS - A method for driving a pixel circuit, which is adapted to drive a first pixel circuit coupled to a first gate line and a second pixel circuit coupled to a second gate line, is disclosed. The first pixel circuit receives display data before the second pixel circuit does. The method provides only one first enable pulse to the first gate line in a frame, and provides a second enable pulse and a third enable pulse to the second gate line in the same frame. The starting time of the second enable pulse is in an enabled time period of the first enable pulse, and the enabled time period of the third enable pulse is after the enabled time periods of the first and second enable pulses. | 06-20-2013 |
Patent application number | Description | Published |
20130196459 | HYBRID OPTOELECTRONIC DEVICE - A hybrid optoelectronic device having Group III-V and Si composition on a low-cost substrate is disclosed. A photonic integrated circuit implemented by the hybrid optoelectronic device is much inexpensive and superior to those implemented by the conventional Group III-V optoelectronic device. In the hybrid optoelectronic device, a physical vapor deposition method is used to form a RMG structure with a smooth surface, and further produce a RE structure on the RMG structure. It relates a monolithic process. The wavelength and the material which attract interest can be adjusted. Thereby, the optoelectronic device can be manufactured with large yield and productivity. High optical coupling efficiency that can be offered comes from the Group III-V active device to the Si passive device (optical access). This would be beneficial to the application to the photonic integrated circuit and suitable for future development of high-performance electronic and optoelectronic devices. | 08-01-2013 |
20140159183 | HIGH-EFFICIENCY BANDWIDTH PRODUCT GERMANIUM PHOTODETECTOR - A high-efficiency bandwidth product germanium photodetector includes a silicon substrate having an opening-down three-sided groove formed by etching; a metallic reflective mirror layer formed by plating along an internal periphery of the opening-down three-sided groove of the silicon substrate; a light absorbent layer between the metallic reflective mirror layer and a dielectric reflective mirror layer. The light absorbent layer can be p-i-n type or other types. By the use of the critical coupling of resonant cavity, all the incident lights can be completely obstructed in the cavity between the metallic reflective mirror layer and the dielectric reflective mirror layer to reach a critical coupling which means 100% absorption efficiency can be achieved without light leakage. Thus on the basis of the critical coupling, the trade-off between bandwidth and efficiency can be broken through to reach high responsivity and high bandwidth up to 50 GHz by decreasing the germanium layer thickness without sacrificing the light-switch-to-electro absorption efficiency. | 06-12-2014 |
20150037048 | LOW VOLTAGE PHOTODETECTORS - A low voltage photodetector structure including a semiconductor device layer, which may be Ge, is disposed over a substrate semiconductor, which may be Si, for example within a portion of a waveguide extending laterally within a photonic integrated circuit (PIC) chip. In exemplary embodiments where the device layer is formed over an insulator layer, the insulator layer is removed to expose a surface of the semiconductor device layer and a passivation material formed as a replacement for the insulator layer within high field regions. In further embodiments, controlled avalanche gain is achieved by spacing electrodes in a metal-semiconductor-metal (MSM) architecture, or complementary doped regions in a p-i-n architecture, to provide a field strength sufficient for impact ionization over a distance not significantly more than an order of magnitude greater than the distance that a carrier must travel so as to acquire sufficient energy for impact ionization. | 02-05-2015 |
20150069565 | Germanium Photodetector Having Absorption Enhanced under Slow-Light Mode - A novel germanium (Ge) photodetector is disclosed, containing a stripe layer including Ge, a substrate supporting the stripe layer, and P and N regions, which are located inside the substrate and near opposite sides of the stripe. The stripe layer containing Ge for light absorption is operated in a slow-light mode by adding combinations of a gradual taper indent structure and a periodic indent structure to reduce light scatterings and to control light group velocity inside the stripe. Due to the slower light traveling velocity inside the stripe, the absorption coefficient of the stripe containing Ge is upgraded to be 1 to 2 orders of magnitude larger than that of a traditional bulk Ge at L band, and so the absorption coefficient reaches more than 1 dB/μm at the wavelength of 1600 nm. | 03-12-2015 |
20150071631 | Device of Optical Passive Repeater Used in Optical Multimode communication - An optical passive repeater is provided. The repeater is operated under a state of polariton Bose-Einstein condensation (BEC). A phase transition from a thermal polariton state to a condensed polariton state is controlled, where system temperatures and densities are lower than thermal dissociation temperatures and nonlinear saturation densities, respectively. Original input multimode laser signals are transformed into final output single-mode laser signals. Thus, the polariton BEC passive repeater becomes a power-efficient and low-cost device to increase the reach of optical links without sacrificing its signal quality and integrity. | 03-12-2015 |
Patent application number | Description | Published |
20140205234 | VERTICAL OPTICAL COUPLER FOR PLANAR PHOTONIC CIRCUITS - Described herein are an apparatus, system, and method for providing a vertical optical coupler (VOC) for planar photonics circuits such as photonics circuits fabricated on silicon-on-insulator (SOI) wafers. In one embodiment, the VOC comprises a waveguide made from a material having refractive index in a range of 1.45 to 3.45, the waveguide comprising: a first end configured to reflect light nearly vertical by total internal reflection between the waveguide and another medium, a second end to receive the light for reflection, and a third end to output the reflected light. The VOC couples with a Si waveguide having a first region including: a first end to receive light; and an inverted tapered end in the direction of light propagation to output the received light, wherein the inverted tapered end of the Si waveguide is positioned inside the waveguide. | 07-24-2014 |
20140217537 | RE-ENTRANT MIRROR PHOTODETECTOR WITH WAVEGUIDE MODE FOCUSING - A photonic integrated circuit (I/C) includes a focusing sidewall or in-plane surface that redirects and focuses light from a waveguide to a photodetector structure. The focusing includes redirecting an optical signal to a width smaller than a width of the waveguide. The focusing of the light allows the photodetector structure to be outside a waveguide defined by parallel oxide structures. With the photodetector structure outside the waveguide, the contacts can be placed closer together, which reduces contact resistance. | 08-07-2014 |
20140231946 | WAVEGUIDE AVALANCHE PHOTODETECTORS - Devices comprised of end-on waveguide-coupled photodetectors are described. in embodiments of the invention, the pbotodetectors are avalanche photodiodes coupled end-on to a waveguide. The waveguide comprises an insulating trench proximate to the coupled photodetector. In embodiments of the invention, the avalanche photodiodes are silicin/germanium avalanche photodiodes. | 08-21-2014 |