Patent application number | Description | Published |
20090026972 | Light Emitting Unit and Lighting Apparatus - To provide a light emitting unit and a lighting apparatus capable of handling different voltages. | 01-29-2009 |
20090101925 | Light Emitting Element and Method for Manufacturing the Same - A light emitting element including: a growth substrate, which has, as a main plane, a plane on which cleavage directions are orthogonal to each other; a first nitride semiconductor layer formed on the main plane of the growth substrate; an active layer formed on the first nitride semiconductor layer; and a second nitride semiconductor layer formed on the active layer. An angle formed on the main plane by the side of the growth substrate and one of the cleavage directions is ranging approximately from 30° to 60°. | 04-23-2009 |
20090127539 | Nitride semiconductor light emitting device - As an example of a nitride semiconductor light emitting device, on a sapphire substrate, a GaN buffer layer, an n-type GaN contact layer, an MQW active layer, and a p-type GaN contact layer are sequentially stacked, and a partial region from the p-type GaN contact layer to the middle of the n-type GaN contact layer is mesa-etched so as to form an n electrode. Meanwhile, a p electrode is provided on the p-type GaN contact layer, and, in addition to the p electrode, multiple ridge parts are formed by crystal growth so as to be scattered. By providing the multiple ridge parts, device characteristics can be improved without causing damage on the GaN-based semiconductor layer. | 05-21-2009 |
20090146187 | Nitride semiconductor element and process for producing the same - An undoped GaN layer, a silicon film, an n type GaN layer, an MQW active layer and a p type GaN layer are stacked sequentially in this order on an AlN buffer layer formed on a sapphire substrate. In this manner, the silicon film is formed in the mid-section of the GaN layers. The AlN buffer layer is crystal-grown at a high temperature. The construction is formed such that a reflectivity of light from a crystal-growing surface is once decreased in a crystal-growing process of the n type GaN layer formed on the silicon film, and the reflectivity of light is increased from the crystal-growing surface in a crystal-growing process of a nitride semiconductor layer to be formed on the n type GaN layer. | 06-11-2009 |
20090160361 | LIGHT EMITTING DEVICE - A light emitting element group includes a plurality of light emitting element units connected in series. A first current limiting circuit is arranged in series with the light emitting element group, and limits a first drive current flowing from one end to the other end of the light emitting element group. A second current limiting circuit is arranged in parallel to the first current limiting circuit, and limits a second drive current flowing in an opposite direction to the first drive current in the light emitting element group. The light emitting element units are configured to include a first light emitting element and a second light emitting element; an anode of the first light emitting element and a cathode of the second light emitting element are connected, and an anode of the second light emitting element and a cathode of the first light emitting element are connected. | 06-25-2009 |
20090256170 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME - A semiconductor light emitter (A) includes an n-type semiconductor layer ( | 10-15-2009 |
20090269867 | METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR AND NITRIDE SEMICONDUCTOR ELEMENT - The present invention provides a method of manufacturing a nitride semiconductor capable of improving the crystallinity and the surface state of the nitride semiconductor crystal formed on top of a high-temperature AlN buffer layer. An AlN buffer layer is formed on top of a growth substrate, and then nitride semiconductor crystals are grown on top of the AlN buffer layer. In a stage of manufacturing the nitride semiconductor, the crystal of the AlN buffer layer is grown at a high temperature of 900° C. or higher. In addition, an Al-source material of the AlN buffer layer is started to be supplied first to a reaction chamber and continues to be supplied without interruption, and then a N-source material is supplied intermittently. | 10-29-2009 |
20090278143 | Semiconductor Light Emitting Device - A plurality of transistors are formed on a substrate in a plurality of columns. Each transistor has a first conductivity type region and second conductivity type regions provided on both sides thereof in a column direction, and has an active layer on the side of each second conductivity type region closer to the substrate. Between two columns adjacent to each other, the second conductivity type region on a first side in the column direction of each transistor arranged on a first column, the second conductivity type region on a second side in the column direction of the transistor adjacent to this transistor on the first side in the column direction and the first conductivity type region of each transistor arranged on a second column are electrically connected by a first wire. Between these two columns, the second conductivity type region on the first side in the column direction of each transistor arranged on the second column, the second conductivity type region on the second side in the column direction of the transistor adjacent to this transistor on the first side in the column direction and the first conductivity type region of each transistor arranged on the first column are electrically connected by a second wire. | 11-12-2009 |
20100289041 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Provided is a semiconductor light emitting device which includes a number of hexagon-shaped semiconductor light emitting elements formed two-dimensionally, and in which the positive electrodes and the negative electrodes are formed on its light outputting surface side lest the light outputting efficiency should decrease. A mask | 11-18-2010 |
20110121337 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present invention provides a nitride semiconductor light-emitting device capable of preventing shortening of the device lifetime due to increase in the driving voltage of the device and internal heat generation, and also providing uniform laser characteristics, even if the device has a ridge stripe structure. On a GaN substrate | 05-26-2011 |