Patent application number | Description | Published |
20110183519 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - A method of manufacturing a semiconductor device and a substrate processing apparatus capable of providing a TiN film that is higher in quality than a TiN film formed by a conventional CVD method at a higher film-forming rate, that is, with a higher productivity than a TiN film formed by an ALD method. The method includes steps of: (a) loading a substrate into a processing chamber; (b) forming a predetermined film on the substrate by simultaneously supplying the first processing gas and the second processing gas into the processing chamber; (c) stopping the supply of the first processing gas and the second processing gas and removing the first processing gas and the second processing gas remaining in the processing chamber; (d) modifying the film formed on the substrate by supplying the second processing gas into the processing chamber after the step (c); and (e) unloading the substrate from the processing chamber, wherein, in the step (b), a time period for supplying the second processing gas into the processing chamber is longer than a time period for supplying the first processing gas into the processing chamber. | 07-28-2011 |
20110186984 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device which are able to form a conductive film, which is dense, includes a low concentration of source-derived impurities and has low resistivity, at a higher film-forming rate. The substrate processing apparatus includes a processing chamber configured to stack and accommodate a plurality of substrates; a first processing gas supply system configured to supply a first processing gas into the processing chamber; a second processing gas supply system configured to supply a second processing gas into the processing chamber; and a control unit configured to control the first processing gas supply system and the second processing gas supply system. Here, at least one of the first processing gas supply system and the second processing gas supply system includes two nozzles which are vertically arranged in a stacking direction of the substrates and have different shapes, and the control unit is configured to supply at least one of the first processing gas and the second processing gas into the processing chamber through the two nozzles having different shapes when films are formed on the substrates by supplying the first processing gas and the second processing gas into the processing chamber at pulses having different film-forming rates. | 08-04-2011 |
20110230057 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, AND SUBSTRATE PROCESSING APPARATUS - An excellent type of a film is realized by modifying conventional types of films. A carbonitride film of a predetermined thickness is formed on a substrate by performing, a predetermined number of times, a cycle including the steps of: supplying a source gas into a process vessel accommodating the substrate under a condition where a CVD reaction is caused, and forming a first layer including an element on the substrate; supplying a carbon-containing gas into the process vessel to form a layer including carbon on the first layer, and forming a second layer including the element and the carbon; supplying the source gas into the process vessel under a condition where a CVD reaction is caused to additionally form a layer including the element on the second layer, and forming a third layer including the element and the carbon; and supplying a nitrogen-containing gas into the process vessel to nitride the third layer, and forming a carbonitride layer serving as a fourth layer including the element, the carbon, and nitrogen. | 09-22-2011 |
20120108077 | SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - Disclosed is a substrate processing apparatus that includes: a substrate supporting member that supports a substrate; a processing chamber capable of housing the substrate supporting member; a rotating mechanism that rotates the substrate supporting member; a carrying mechanism that carries out the substrate supporting member from the processing chamber; a material gas supply system that supplies material gas into the processing chamber; a nitrogen-containing-gas supply system that supplies nitrogen containing gas into the processing chamber; and a controller that controls the material gas supply system, the nitrogen-containing-gas supply system, the carrying mechanism, and the rotating mechanism, after forming a nitride film on the substrate by using the material gas and the nitrogen containing gas, to carry out the substrate supporting member that supports the substrate while being rotated from the processing chamber. | 05-03-2012 |
20120214300 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE PROCESSING APPARATUS - Provided are a semiconductor device manufacturing method and a substrate processing apparatus that are capable of increasing a work function of a film to be formed, in comparison with a related art. A cycle including (a) supplying a metal-containing gas into a processing chamber where a substrate is accommodated (b) supplying a nitrogen-containing gas into the processing chamber; and (c) supplying one of an oxygen-containing gas, a halogen-containing gas and a combination thereof into the processing chamber, is performed a plurality of times to form a metal-containing film on the substrate. | 08-23-2012 |
20140073146 | Reaction Tube, Substrate Processing Apparatus and Method of Manufacturing Semiconductor Device - Provided are a reaction tube, a substrate processing apparatus, and a method of manufacturing a semiconductor device capable of suppressing a non-uniform distribution of a gas in a top region to improve the flow of the gas and film uniformity within and between substrate surfaces. The reaction tube has a cylindrical shape, accommodates a plurality of substrates stacked therein, and includes a cylindrical portion and a ceiling portion covering an upper end portion of the cylindrical portion, the ceiling portion having a substantially flat top inner surface. A thickness of a sidewall of the ceiling portion is greater than that of a sidewall of the cylindrical portion. | 03-13-2014 |
20140162454 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - Provided is a method of manufacturing a semiconductor device. The method includes (a) loading a substrate into a processing chamber; (b) starting a supply of a first processing gas into the processing chamber; (c) starting a supply of a second processing gas into the processing chamber during the supply of the first processing gas; (d) stopping the supply of the second processing gas during the supply of the first processing gas; (e) stopping the supply of the first processing gas after performing the step (d); (f) removing the first processing gas and the second processing gas remaining after performing the step (e) from the processing chamber; and (g) unloading the substrate from the processing chamber. | 06-12-2014 |
20140295667 | Method of Manufacturing Semiconductor Device - To improve quality or manufacturing throughput of a semiconductor device, a method includes supplying a source gas to a substrate in a process chamber; exhausting an inside of the process chamber; supplying a reaction gas to the substrate; and exhausting the inside of the process chamber, wherein the source gas and/or the reaction gas is supplied in temporally separated pulses in the supply of the source gas and/or in the supply of the reaction gas. Then, the source gas and/or the reaction gas is supplied in temporally separated pulses to form a film during a gas supply time determined by a concentration distribution of by-products formed on a surface of the substrate. | 10-02-2014 |