Yukimune
Yukimune Takahashi, Takasaki JP
Patent application number | Description | Published |
---|---|---|
20090306300 | Cell Made of Polymers for Spectra Measurement and Method for Producing the Same - This invention provides a cell made of polymers for spectra measurement while inhibiting a decrease in a molecular weight of resin caused by discharge treatment and having a stable hydrophilic modified surface. The hydrophilic resin cell is prepared by providing a polymeric resin cell between the two opposing electrodes, applying an electric field to a region between the above opposing electrodes under a nitrogen atmosphere with a pressure close to the atmospheric pressure to generate an electric discharge, and exposing the cell subjected to discharge treatment with a gas including oxygen. | 12-10-2009 |
Yukimune Watanabe, Chino JP
Patent application number | Description | Published |
---|---|---|
20080303119 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming a metal oxide on a semiconductor substrate, forming a gate electrode film on the metal oxide, and executing a thermal treatment on the semiconductor substrate provided with the metal oxide and the gate electrode film to crystallize the metal oxide. | 12-11-2008 |
20080318439 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor wafer is placed in a chamber of a film-deposition apparatus, and gas in the chamber is exhausted from a gas exhaust outlet. Then, with interrupting the exhaust, an inert gas is introduced into the chamber so that the chamber has a pressure of 133 Pa or higher and lower than 101325 Pa, and then a mixed gas of an inert gas and a source gas for depositing a metal oxide film is introduced into the chamber. Then, after exhausting the gas in the chamber, an oxidation gas is introduced into the chamber to react with the molecules of the source gas absorbed on the semiconductor wafer to form a metal oxide film on the semiconductor wafer. By repeating these steps, a metal oxide film having a desired film thickness is deposited on the semiconductor wafer with a film-thickness distribution by an ALD method. | 12-25-2008 |
Yukimune Watanabe, Hokuto-Shi JP
Patent application number | Description | Published |
---|---|---|
20120037067 | CUBIC SILICON CARBIDE FILM MANUFACTURING METHOD, AND CUBIC SILICON CARBIDE FILM-ATTACHED SUBSTRATE MANUFACTURING METHOD - A method for manufacturing a cubic silicon carbide film includes: a first step of introducing a carbon-containing gas onto a silicon substrate and rapidly heating the silicon substrate to an epitaxial growth temperature of cubic silicon carbide so as to carbonize a surface of the silicon substrate and form a cubic silicon carbide film; and a second step of introducing a carbon-containing gas and a silicon-containing gas onto the cubic silicon carbide film while maintaining the cubic silicon carbide film at the epitaxial growth temperature of cubic silicon carbide, so as to allow further epitaxial growth of the cubic silicon carbide film. | 02-16-2012 |
20120235163 | SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE - A semiconductor substrate includes: single crystal silicon; a mask material formed on a surface of the single crystal silicon and having an opening; a silicon carbide film formed on a portion exposed in the opening of the single crystal silicon; and a single crystal silicon carbide film formed so as to cover the silicon carbide film and the mask material. The mask material has a viscosity of 10 | 09-20-2012 |
20130181230 | SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD - A semiconductor substrate includes: a silicon substrate; a monocrystalline silicon carbide film formed on a surface of the silicon substrate; and a stress relieving film formed on the surface of the silicon substrate opposite from the side on which the monocrystalline silicon carbide film is formed, and that relieves stress in the silicon substrate by applying compressional stress to the silicon substrate surface on which the stress relieving film is formed, wherein a plurality of spaces is present in the monocrystalline silicon carbide film in portions on the side of the silicon substrate and along the interface between the monocrystalline silicon carbide film and the silicon substrate. | 07-18-2013 |