Patent application number | Description | Published |
20080283852 | Light-emitting device and a method for producing the same - A light-emitting device and a method to from the device are is described. The device described herein may realize the transversely single mode operation by the buried mesa configuration even when the active layer contains aluminum. The method provides a step to form the mesa on a semiconductor substrate with an average dislocation density of 500 to 5000 cm | 11-20-2008 |
20090170327 | Method of manufacturing a semiconductor device - In this method of manufacturing a semiconductor device, the remaining layer of an etching mask layer remains in a predetermined thickness when the stamping face of a nano-stamper is pressed on the surface of the etching mask layer. Therefore, the remaining layer of the etching mask layer functions as a cushion so that the stress added to the nano-stamper and the semiconductor substrate is reduced. Accordingly, the crystal defect that might otherwise be introduced in the semiconductor substrate in pressing the nano-stamper on the semiconductor substrate can be restrained, resulting in suppression of the degradation of optical characteristics of the semiconductor device. Also, since the nano-stamper can be prevented from being damaged, extra steps such as the replacement of the nano-stamper can be avoided. | 07-02-2009 |
20100197057 | METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE - A method for manufacturing a semiconductor optical device having an optical grating, includes the steps of: forming a semiconductor layer, an insulating layer and a first resin layer not containing silicon (Si); forming a second resin layer containing silicon (Si) on the first resin layer wherein the second resin layer has a pattern corresponding to the optical grating; etching the first resin layer using the second resin layer as a mask by a reactive ion etching that uses a mixed gas of oxygen and nitrogen where the first resin layer is cooled downto a first temperature during etching to form a protective layer on a side face of the etched first resin layer; increasing the temperature of the first resin layer upto a second temperature higher than the first temperature; etching the insulating layer using the patterned first resin layer as a mask; and forming the optical grating on the semiconductor layer by etching the semiconductor layer using the patterned insulating layer as a mask. | 08-05-2010 |
20110306155 | METHOD FOR PRODUCING SEMICONDUCTOR OPTICAL DEVICE - A method for producing a semiconductor optical device includes the steps of forming a semiconductor layer; forming a non-silicon-containing resin layer; forming a first pattern in the non-silicon-containing resin layer; forming a silicon-containing resin layer; etching the silicon-containing resin layer to have a second pattern reverse to the first pattern; selectively etching the non-silicon-containing resin layer by a RIE method employing a gas mixture containing CF | 12-15-2011 |
20110306185 | METHOD FOR FORMING LAMINATED RESIN FILM AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE - A method for producing a semiconductor device includes the steps of forming a semiconductor layer; forming a non-silicon-containing resin layer on the semiconductor layer; forming a pattern in the non-silicon-containing resin layer; forming a silicon-containing resin layer on the non-silicon-containing resin layer; etching the silicon-containing resin layer; selectively etching the non-silicon-containing resin layer; and etching the semiconductor layer. The step of forming the silicon-containing resin layer includes the steps of applying a silicon-containing resin solution with a first viscosity on a surface of the non-silicon-containing resin layer, the silicon-containing resin solution containing a silicon-containing resin and a volatile solvent; heating the silicon-containing resin layer to a first temperature, the silicon-containing resin layer having a second viscosity by heating to the first temperature, the second viscosity being larger than the first viscosity; and applying a rinse solution containing a volatile component to an edge portion of the silicon-containing resin layer. | 12-15-2011 |
20120003348 | NANO-IMPRINT MOLD - A nano-imprint mold includes a mold base; mold body having a first surface and a second surface opposite the first surface; and an elastic body disposed between a surface of the mold base and the first surface of the mold body, the elastic body being composed of resin. The second surface of the mold body is provided with a nano-imprint pattern. In addition, the elastic body has a bulk modulus lower than a bulk modulus of the mold body. | 01-05-2012 |
20120040041 | METHOD FOR MANUFACTURING NANO-IMPRINT MOLD, METHOD FOR FORMING RESIN PATTERN BY NANO-IMPRINT TECHNIQUE, AND NANO-IMPRINT MOLD - A nano-imprint mold includes a mold body having a first surface provided with a pattern having projections and recesses, a second surface opposite the first surface and a side surface between the first surface and the second surface; and a mold base having a surface for fixing the mold body thereto. In addition, the second surface of the mold body is fixed to a part of the surface of the mold base, the second surface of the mold body being disposed away from at least a part of an edge of the surface of the mold base. Furthermore, the mold body has a shape such that a width thereof in a direction orthogonal to a direction extending from the first surface toward the second surface decreases from the first surface toward the second surface. | 02-16-2012 |
20120058581 | METHOD OF MANUFACTURING LASER DIODE - Manufacturing a laser diode includes growing an active layer, a first InP layer, and a diffraction grating layer; forming an alignment mark having a recess by etching the diffraction grating layer and the first InP layer; forming a first etching mask; forming a diffraction grating in the diffraction grating layer using the first etching mask; forming a modified layer containing InAsP on a surface of the alignment mark recess by supplying a first source gas containing As and a second source gas containing P; growing a second InP layer on the diffraction grating layer and on the alignment mark; forming a second etching mask on the second InP layer; selectively etching the second InP layer embedded in the recess of the alignment mark through the second etching mask by using the modified layer serving as an etching stopper; and forming a waveguide structure using the alignment mark. | 03-08-2012 |
20120058582 | METHOD FOR ETCHING INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE - A method for etching an insulating film includes the steps of forming an insulating film; forming a first resin layer composed of a non-silicon-containing resin on the insulating film; forming a pattern including projections and recesses in the first resin layer; forming a second resin layer composed of a silicon-containing resin to cover the projections and the recesses of the pattern in the first resin layer; etching the second resin layer by reactive ion etching with etching gas containing CF | 03-08-2012 |
20120058635 | METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE - A method for manufacturing includes the steps of forming a BCB resin region on a semiconductor optical device; processing a surface of the BCB resin region with inductively coupled plasma produced with a high-frequency power supply for supplying ICP power and a high-frequency power supply for supplying bias power, thus forming a silicon oxide film on the surface of the BCB resin region and roughening the surface of the BCB resin region with projections and recesses; and forming an electrode pad on the surface of the BCB resin region in direct contact with the silicon oxide film. The surface roughness of the BCB resin region and the thickness of the silicon oxide film on the surface of the BCB resin region are controlled by adjusting the bias power and the ICP power. | 03-08-2012 |
20120142129 | METHOD OF MANUFACTURING SEMICONDUCTOR LASER HAVING DIFFRACTION GRATING - A method of manufacturing a semiconductor laser having a diffraction grating includes the steps of forming a first semiconductor layer on a semiconductor substrate; forming periodic projections and recesses which constitute a diffraction grating in the first semiconductor layer; cleaning a surface of the first semiconductor layer with water; drying the surface of the first semiconductor layer; and forming a second semiconductor layer on the first semiconductor layer. In drying the surface of the first semiconductor layer, after replacing water adhering to the surface of the first semiconductor layer with a water-soluble organic solvent, exposing the surface of the first semiconductor layer provided with the projections and recesses to an atmosphere containing the water-soluble organic solvent. At least one of the first semiconductor layer and the second semiconductor layer is composed of a p-type semiconductor. | 06-07-2012 |
20120309123 | METHOD FOR MANUFACTURING QUANTUM CASCADE LASER - A method for manufacturing a quantum cascade laser includes the steps of forming a semiconductor stacked structure including a first semiconductor region and a second semiconductor region; forming an etching mask having a striped pattern on the second semiconductor region; forming a semiconductor mesa structure having a mesa shape in cross section by etching the first and second semiconductor regions using the etching mask; forming an insulating layer over a top portion and side surfaces of the semiconductor mesa structure and the first semiconductor region; forming an opening in a portion of the insulating layer that is disposed on the top portion of the semiconductor mesa structure; and forming an electrode over the inside of the opening of the insulating layer, the top portion and side surfaces of the semiconductor mesa structure, and the first semiconductor region. | 12-06-2012 |
20130017638 | PROCESS FOR MANUFACTURING BURIED HETERO-STRUCTURE LASER DIODESAANM TSUJI; YukihiroAACI Yokohama-shiAACO JPAAGP TSUJI; Yukihiro Yokohama-shi JP - A process for manufacturing buried hetero-structure laser diodes includes the steps of forming a stacked semiconductor layer on a substrate; forming a mask layer on the stacked semiconductor layer; forming a semiconductor mesa by etching the stacked semiconductor layer through the mask layer; forming an overhang of the mask layer by selectively etching the stacked semiconductor layer of the semiconductor mesa; selectively growing a buried layer on a side surface of the semiconductor mesa while leaving the mask layer on the semiconductor mesa; forming a lateral portion of the buried layer, the lateral portion having a side surface adjacent to the side surface of the semiconductor mesa; after forming the lateral portion of the buried layer, removing the mask layer on the semiconductor mesa; and forming an electrode on a top surface of the semiconductor mesa and on the side surface of the lateral portion of the buried layer. | 01-17-2013 |