Patent application number | Description | Published |
20080251816 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor memory device is composed of a field effect transistor using the interface between a ferroelectric film and a semiconductor film as the channel and including a gate electrode to which a voltage for controlling the polarization state of the ferroelectric film is applied and source/drain electrodes provided on both ends of the channel to detect a current flowing in the channel in accordance with the polarization state. The semiconductor film is made of a material having a spontaneous polarization and the direction of the spontaneous polarization is parallel with the interface between the ferroelectric film and the semiconductor film. | 10-16-2008 |
20090097299 | SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND SEMICONDUCTOR SWITCHING DEVICE - A first electrode is formed on a stacked-layer film, which is formed of a ferroelectric layer and a semiconductor layer, at the ferroelectric layer and a plurality of second electrodes are formed on the stacked-layer film at the semiconductor layer side. Each of parts of the semiconductor layer located in regions in which the second electrodes are formed functions as a resistance modulation element (memory) using the polarization assist effect of the ferroelectric layer. Information (a low resistance state or a high resistance state) held in a memory is read by detecting a value of a current flowing in each part of the semiconductor layer. Information is written in a memory by inverting a polarization of the ferroelectric layer. | 04-16-2009 |
20090152607 | FERROELECTRIC STACKED-LAYER STRUCTURE, FIELD EFFECT TRANSISTOR, AND FERROELECTRIC CAPACITOR AND FABRICATION METHODS THEREOF - A ferroelectric stacked-layer structure is fabricated by forming a first polycrystalline ferroelectric film on a polycrystalline or amorphous substrate, and after planarizing a surface of the first ferroelectric film, laminating on the first ferroelectric film a second thin ferroelectric film having the same crystalline structure as the first ferroelectric film. A field effect transistor or a ferroelectric capacitor includes the ferroelectric stacked-layer structure as a gate insulating film or a capacitor film. | 06-18-2009 |
20090290404 | SEMICONDUCTOR MEMORY DEVICE - A memory cell includes a memory element including a MFSFET having a gate insulating film made of a ferroelectric film, and a selection switching element including a MISFET having a gate insulating film made of a paraelectric film. A load element for a read operation is connected in series to the memory cell. The ferroelectric film and the paraelectric film are stacked with a semiconductor film being interposed therebetween. The semiconductor film forms a common channel shared by the MFSFET and the MISFET. The load element includes a MISFET having a channel made of the semiconductor film or a resistance element having a resistor made of the semiconductor film. | 11-26-2009 |
20110299318 | SEMICONDUCTOR MEMORY CELL AND MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR MEMORY DEVICES - A semiconductor memory cell includes: a memory element formed by a first field effect transistor having a gate insulating film made of a ferroelectric film; and a select switching element formed by a second field effect transistor having a gate insulating film made of a paraelectric film. The ferroelectric film and the paraelectric film are stacked together with a semiconductor film of a compound semiconductor interposed therebetween. A first gate electrode of the first field effect transistor is formed on a side of the ferroelectric film, and a second gate electrode of the second field effect transistor is formed on a side of the paraelectric film so as to face the first gate electrode. The semiconductor film forms a common channel layer of the first and second field effect transistors. | 12-08-2011 |
20110299566 | PYROELECTRIC TEMPERATURE SENSOR AND A METHOD FOR MEASURING A TEMPERATURE WITH THE PYROELECTRIC TEMPERATURE SENSOR - A temperature sensor includes first and second lower electrodes, a ferroelectric layer having polarization, a semiconductor layer; and first to third upper electrodes. The second upper electrode is interposed between the first upper electrode and the third upper electrode in a plan view. The semiconductor layer includes a first channel disposed between the first upper electrode and the second upper electrode, and a second channel disposed between the second upper electrode and the third upper electrode. The ferroelectric layer includes a first ferroelectric part disposed below the first channel and a second ferroelectric part disposed below the second channel. A polarization direction of the first ferroelectric part is opposite to a polarization direction of the second first ferroelectric part. The temperature is calculated based on the output voltage from the second upper electrode and the voltage applied to the first upper electrode. | 12-08-2011 |
20110309858 | NON-VOLATILE LOGIC CIRCUIT AND A METHOD FOR OPERATING THE SAME - In a non-volatile logic circuit, a first input electrode and a second input electrode are formed on a semiconductor layer and interposed between an electric current source electrode and an output electrode in a plan view. The first input electrode is next to the second input electrode along the a direction orthogonal to the direction between the electric current source electrode and the output electrode. A method of operating the non-volatile logic circuit includes a step of writing one state selected from four states by applying voltages to the first input electrode and the second input electrode, respectively, and a step of measuring current generated by applying the voltage between the electric current power electrode and the output electrode to determine on the basis of the current, which of the high or low resistant state the non-volatile logic circuit has. | 12-22-2011 |
20110309859 | METHOD FOR OPERATING A NON-VOLATILE LOGIC CIRCUIT - In a non-volatile logic circuit, a first input electrode and a second input electrode are formed on a semiconductor layer and interposed between an electric current source electrode and an output electrode in a plan view. The semiconductor layer is disposed on a ferroelectric layer. A method of operating the non-volatile logic circuit includes a step of writing one state selected from four states by applying voltages to the first and second input electrode, respectively, a step of measuring current generated by applying the voltage between the electric current source electrode and the output electrode to determine, on the basis of the measured current, which of the high or low resistant state the non-volatile logic circuit has. | 12-22-2011 |
20110309860 | NONVOLATILE LOGIC CIRCUIT AND A METHOD FOR OPERATING THE SAME AS AN EXCLUSIVE-OR (XOR) CIRCUIT - A non-volatile logic circuit includes a control electrode, a ferroelectric layer disposed on the control electrode, a semiconductor layer disposed on the ferroelectric layer, a power electrode and an output electrode disposed on the semiconductor layer, and first to fourth input electrodes disposed on the semiconductor layer. The first and second input electrodes receive first and second inputs, respectively. The third and fourth input electrodes receive inversion signals of the second and first input signal, respectively. A resistance value of the semiconductor layer between the power electrode and the output electrode varies according to the first input signal and the second input signal so that an exclusive-OR signal of the first and second input signals is output from the output electrode. | 12-22-2011 |
20110310650 | SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF OPERATING THEREOF - In the operating method of the semiconductor memory device, (1) voltages V | 12-22-2011 |
20120008365 | METHOD FOR OPERATING A NONVOLATILE SWITCHING DEVICE - A method of flowing a current selectively with a nonvolatile switching device according to the present disclosure includes a step of configuring, in the nonvolatile switching device, any one of a first state in which a current does not flow between the electrode group, a second state in which a current flows selectively between the first electrode and the second electrode, and a third state in which a current flows selectively between the first electrode and the third electrode. When any one of the first state, the second state and the third state is configured, voltages V | 01-12-2012 |
20120068732 | NONVOLATILE LOGIC CIRCUIT AND A METHOD FOR OPERATING THE SAME - A nonvolatile logic circuit includes logic configuration electrodes and input electrodes. The nonvolatile logic circuit is programmable to any one of the logics between the input signals selected from logical conjunction (AND), logical disjunction (OR), logical non-conjunction (NAND), logical non-disjunction (NOR), and logical exclusive disjunction (XOR) by changing applied voltages to the logic configuration electrodes. | 03-22-2012 |
20120112787 | NONVOLATILE LOGIC CIRCUIT AND A METHOD FOR OPERATING THE SAME - A nonvolatile logic circuit includes logic configuration electrodes and input electrodes. The nonvolatile logic circuit is programmable to any one of the logics between the input signals selected from logical conjunction (AND), logical disjunction (OR), logical non-conjunction (NAND), logical non-disjunction (NOR), and logical exclusive disjunction (XOR) by changing applied voltages to the logic configuration electrodes. | 05-10-2012 |
20120217996 | NONVOLATILE LOGIC CIRCUIT AND A METHOD FOR OPERATING THE SAME - A nonvolatile logic circuit includes logic configuration electrodes and input electrodes. The nonvolatile logic circuit is programmable to any one of the logics between the input signals selected from logical conjunction (AND), logical disjunction (OR), logical non-conjunction (NAND), logical non-disjunction (NOR), and logical exclusive disjunction (XOR) by changing applied voltages to the logic configuration electrodes. | 08-30-2012 |
20120217997 | NONVOLATILE LOGIC CIRCUIT AND A METHOD FOR OPERATING THE SAME - A nonvolatile logic circuit includes logic configuration electrodes and input electrodes. The nonvolatile logic circuit is programmable to any one of the logics between the input signals selected from logical conjunction (AND), logical disjunction (OR), logical non-conjunction (NAND), logical non-disjunction (NOR), and logical exclusive disjunction (XOR) by changing applied voltages to the logic configuration electrodes. | 08-30-2012 |
20130009713 | RESISTANCE-CAPACITANCE OSCILLATION CIRCUIT - A resistance-capacitance oscillation circuit comprises an amplifier and a phase shifting circuit. The phase shifting circuit comprises at least three resistance-capacitance circuit elements, which comprise a resistance and a capacitance. At least one of the resistance-capacitance circuit elements comprises a variable resistance and a variable capacitance. The variable resistance is formed of a first electrode, a second electrode, a part of a semiconductor film, a part of a ferroelectric film, and a fourth electrode. The variable capacitor is formed of the second electrode, a third electrode, a fifth electrode, another part of the ferroelectric film, another part of the semiconductor film, and a paraelectric film. | 01-10-2013 |
20130009714 | RESISTANCE-CAPACITANCE OSCILLATION CIRCUIT - A resistance-capacitance oscillation circuit comprises an amplifier and a phase shifting circuit. The phase shifting circuit comprises at least three resistance-capacitance circuit elements, each of which comprises a resistance and a capacitor. At least one of the resistance-capacitance circuit elements comprises a variable resistance and a variable capacitor. The variable resistance is formed of a first electrode, a second electrode, a part of a semiconductor film, a part of a ferroelectric film, and a fourth electrode. The variable capacitor is formed of the second electrode, a third electrode, a fifth electrode, another part of the ferroelectric film, another part of the semiconductor film, and a paraelectric film. | 01-10-2013 |
20130094274 | METHOD FOR DRIVING SEMICONDUCTOR MEMORY DEVICE - An object of the present invention is to provide a novel method for driving a semiconductor memory device. | 04-18-2013 |
20130311414 | LEARNING METHOD OF NEURAL NETWORK CIRCUIT - A neuron circuit in a neural network circuit element includes a waveform generating circuit for generating a predetermined pulse voltage, and a first input signal has a waveform of the predetermined pulse voltage. For a period having a predetermined duration of the predetermined pulse voltage generated within the neural network circuit element including the variable resistance element which is applied with the first input signal from another neural network circuit element, the first input signal is permitted to be input to the control electrode of the variable resistance element, to change the resistance value of the variable resistance element due to an electric potential difference generated between the first electrode and the control electrode which occurs depending on an input timing of the first input signal with respect to the period during which the first input signal is permitted to be input to the control electrode. | 11-21-2013 |
20130311415 | LEARNING METHOD OF NEURAL NETWORK CIRCUIT - A neuron circuit in a neural network circuit element includes a waveform generating circuit for generating a bipolar sawtooth pulse voltage, and a first input signal has a bipolar sawtooth pulse waveform. For a period during which the first input signal is permitted to be input to a first electrode of a variable resistance element, the bipolar sawtooth pulse voltage generated within the neural network circuit element including the variable resistance element which is applied with the first input signal from another neural network circuit element is input to a control electrode of the variable resistance element. The resistance value of the variable resistance element changes due to an electric potential difference between the first electrode and the control electrode, the electric potential difference being generated depending on an input timing difference between a voltage applied to the first electrode and the voltage applied to the control electrode. | 11-21-2013 |
20140016395 | METHOD OF DRIVING NONVOLATILE SEMICONDUCTOR DEVICE - Pulse voltages V1 and V2 are applied to the first upper gate electrode and the second upper gate electrode, respectively, for a period T1 which is shorter than a period necessary to invert all the polarizations included in the ferroelectric film, while voltages Vs, Vd, and V3 are applied to the source electrode, the drain electrode, and the lower gate electrode film, respectively, so as to increase the values of the widths WRH1 and WRH2 and so as to decrease the value of the width WRL. The pulse voltages V1 and V2 have a smaller voltage than a voltage necessary to invert all the polarizations included in the ferroelectric film. The voltage Vs, the voltage Vd, the voltage V3, the pulse voltage V1, and the pulse voltage V2 satisfy the following relationship: Vs, Vd, V301-16-2014 | |
20140112051 | METHOD OF DRIVING NONVOLATILE SEMICONDUCTOR DEVICE - Pulse voltages V | 04-24-2014 |