Patent application number | Description | Published |
20120223338 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor device includes the steps of forming a silicon oxide film on a silicon carbide substrate, annealing the silicon carbide substrate and the silicon oxide film in gas containing hydrogen, and forming an aluminum oxynitride film on the silicon oxide film after the annealing of the silicon carbide substrate and the silicon oxide film. | 09-06-2012 |
20120261676 | SiC FIELD EFFECT TRANSISTOR - A SiC field effect transistor includes: a SiC semiconductor layer; and a MIS transistor structure including a first conductivity type source region in the semiconductor layer, a second conductivity type body region in the semiconductor layer in contact with the source region, a first conductivity type drift region in the semiconductor layer in contact with the body region, a gate electrode opposed to the body region with a gate insulation film interposed between the electrode and the body region for forming a channel in the body region to cause electric current to flow between the drift region and the source region, and a barrier forming layer in contact with the drift region to form a junction barrier by the contact with the drift region, the junction barrier being lower than a diffusion potential of a body diode defined by a junction between the body region and the drift region. | 10-18-2012 |
20130001680 | SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device (A | 01-03-2013 |
20130313576 | SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME - A semiconductor power device of the present invention includes a first electrode and a second electrode, a breakdown voltage holding layer that is made of a semiconductor having a predetermined thickness and a predetermined impurity concentration, to which the first electrode and the second electrode are joined, and that has an active region in which carriers to generate electric conduction between the first electrode and the second electrode move, and an insulation film that is formed on the breakdown voltage holding layer and that has a high dielectric-constant portion having a higher dielectric constant than SiO | 11-28-2013 |
20130313635 | SEMICONDUCTOR DEVICE - A semiconductor device of the present invention is a semiconductor device having a semiconductor layer comprising a wide band gap semiconductor, wherein the semiconductor layer includes: a first conductivity-type source region, a second conductivity-type channel region and a first conductivity-type drain region, which are formed in this order from the surface side of the semiconductor layer; a source trench lying from the surface of the semiconductor layer through the source region and the channel region to the drain region; a gate insulating film formed so as to contact the channel region; a gate electrode facing the channel region with the gate insulating film interposed therebetween; and a first breakdown voltage holding region of a second conductivity type formed selectively on the side face or the bottom face of the source trench, and the semiconductor device includes a barrier formation layer, which is joined with the drain region in the source trench, for forming, by junction with the drain region, a junction barrier lower than a diffusion potential of a body diode formed by p-n junction between the channel region and the drain region. | 11-28-2013 |
20140034969 | SILICON CARBIDE TRENCH MOSFET HAVING REDUCED ON-RESISTANCE, INCREASED DIELECTRIC WITHSTAND VOLTAGE, AND REDUCED THRESHOLD VOLTAGE - A semiconductor device (A | 02-06-2014 |
20140346529 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE - A semiconductor-device manufacturing method of the present invention includes a step of selectively implanting impurity ions into a surface of an SiC semiconductor layer and forming impurity regions and a step of activating the impurity ions by annealing the SiC semiconductor layer at a temperature of 1400° C. or more when the surface of the SiC semiconductor layer is covered with an insulating film. | 11-27-2014 |
20150034971 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - [Problem] To provide an SiC semiconductor device, with which stabilization of high-temperature operation can be achieved by decreasing mobile ions in a gate insulating film, and a method for manufacturing the SiC semiconductor device. | 02-05-2015 |