Patent application number | Description | Published |
20090284278 | DISPLAY DEVICE AND ELECTRONIC APPARATUS HAVING THE DISPLAY DEVICE - To provide a display device having a test circuit with high accuracy for testing in the step after a counter substrate is attached and before shipping, and to provide a display device having a correction circuit inside the display device, for the case where a defect occurs. A pixel circuit operated by a gate line and a source line, a first wiring formed at the same time as the gate line, a second wiring formed at the same time as the source line, and a test circuit of detecting a defect of the pixel circuit by using potentials of the first wiring and the second wiring are provided over a substrate. | 11-19-2009 |
20100084475 | Semiconductor Device - The semiconductor device includes an antenna | 04-08-2010 |
20110297928 | SEMICONDUCTOR DEVICE - The semiconductor device is provided in which a plurality of memory cells each including a first transistor, a second transistor, and a capacitor is arranged in matrix and a wiring (also referred to as a bit line) for connecting one of the memory cells and another one of the memory cells and a source or drain region in the first transistor are electrically connected through a conductive layer and a source or drain electrode in the second transistor provided therebetween. With this structure, the number of wirings can be reduced in comparison with a structure in which the source or drain electrode in the first transistor and the source or drain electrode in the second transistor are connected to different wirings. Thus, the integration degree of a semiconductor device can be increased. | 12-08-2011 |
20110298027 | SEMICONDUCTOR DEVICE - It is an object to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied and there is no limitation on the number of writings. A semiconductor device includes a second transistor and a capacitor provided over a first transistor. A source electrode of the second transistor which is in contact with a gate electrode of the first transistor is formed using a material having etching selectivity with respect to the gate electrode. By forming the source electrode of the second transistor using a material having etching selectivity with respect to the gate electrode of the first transistor, a margin in layout can be reduced, so that the degree of integration of the semiconductor device can be increased. | 12-08-2011 |
20120032171 | SEMICONDUCTOR DEVICE - An object is to miniaturize a semiconductor device. Another object is to reduce the area of a driver circuit of a semiconductor device including a memory cell. The semiconductor device includes an element formation layer provided with at least a first semiconductor element, a first wiring provided over the element formation layer, an interlayer film provided over the first wiring, and a second wiring overlapping with the first wiring with the interlayer film provided therebetween. The first wiring, the interlayer film, and the second wiring are included in a second semiconductor element. The first wiring and the second wiring are wirings to which the same potentials are supplied. | 02-09-2012 |
20130207101 | SEMICONDUCTOR DEVICE - A transistor including an oxide semiconductor and having favorable operation characteristics is provided. Further, by using the transistor, a semiconductor having improved operation characteristics can be provided. In planar view, one of a source electrode and a drain electrode of the transistor is surrounded by a ring-shaped gate electrode. Further, in planar view, one of the source electrode and the drain electrode of the transistor is surrounded by a channel formation region. Accordingly, the source electrode is not electrically connected to the drain electrode through a parasitic channel generated in an end portion of an island-shaped oxide semiconductor layer. | 08-15-2013 |
20140368486 | DISPLAY DEVICE - An object of the present invention is to provide a display device which does not need an input/output terminal such as an FPC or a cable for connecting to the display device and inputting an image signal to the display device directly, and can provide a setting, a display image, and the like which an operator desires. A display device of the present invention includes a display portion, a console portion to operate or input from the exterior, an antenna portion to transmit and receive a radio signal, a controller portion to control a signal input into the console portion and a signal for being transmitted or received in the antenna portion, and a battery portion to convert the radio signal received in the antenna portion into electric power and retain the electric power for driving the display portion. | 12-18-2014 |
20150014685 | SEMICONDUCTOR DEVICE - An object is to miniaturize a semiconductor device. Another object is to reduce the area of a driver circuit of a semiconductor device including a memory cell. The semiconductor device includes an element formation layer provided with at least a first semiconductor element, a first wiring provided over the element formation layer, an interlayer film provided over the first wiring, and a second wiring overlapping with the first wiring with the interlayer film provided therebetween. The first wiring, the interlayer film, and the second wiring are included in a second semiconductor element. The first wiring and the second wiring are wirings to which the same potentials are supplied. | 01-15-2015 |
20150069383 | SEMICONDUCTOR DEVICE - A semiconductor device including an oxide semiconductor that is miniaturized and has favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor film and a blocking film; a source electrode and a drain electrode electrically connected to the oxide semiconductor film; a gate insulating film in contact with the oxide semiconductor film, the source electrode, and the drain electrode; and a gate electrode in contact with the gate insulating film. The blocking film contains the same material as the oxide semiconductor film, is on the same surface as the oxide semiconductor film, and has a higher conductivity than the oxide semiconductor film. | 03-12-2015 |