| Patent application number | Description | Published |
|---|
| 20090230467 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - In a power MISFET having a trench gate structure with a dummy gate electrode, a technique is provided for improving the performance of the power MISFET, while preventing electrostatic breakdown of a gate insulating film therein. A power MISFET having a trench gate structure with a dummy gate electrode, and a protective diode are formed on the same semiconductor substrate. The protective diode is provided between a source electrode and a gate interconnection. In a manufacturing method of such a semiconductor device, a polycrystalline silicon film for the dummy gate electrode and a polycrystalline silicon film for the protective diode are formed simultaneously. A source region of the power MISFET and an n | 09-17-2009 |
| 20100171174 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A gate trench | 07-08-2010 |
| 20100327359 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - In a power MISFET having a trench gate structure with a dummy gate electrode, a technique is provided for improving the performance of the power MISFET, while preventing electrostatic breakdown of a gate insulating film therein. A power MISFET having a trench gate structure with a dummy gate electrode, and a protective diode are formed on the same semiconductor substrate. The protective diode is provided between a source electrode and a gate interconnection. In a manufacturing method of such a semiconductor device, a polycrystalline silicon film for the dummy gate electrode and a polycrystalline silicon film for the protective diode are formed simultaneously. A source region of the power MISFET and an n | 12-30-2010 |
| 20110068392 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A gate trench | 03-24-2011 |
| 20110233665 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A gate trench | 09-29-2011 |
| 20120241855 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - In a power MISFET having a trench gate structure with a dummy gate electrode, a technique is provided for improving the performance of the power MISFET, while preventing electrostatic breakdown of a gate insulating film therein. A power MISFET having a trench gate structure with a dummy gate electrode, and a protective diode are formed on the same semiconductor substrate. The protective diode is provided between a source electrode and a gate interconnection. In a manufacturing method of such a semiconductor device, a polycrystalline silicon film for the dummy gate electrode and a polycrystalline silicon film for the protective diode are formed simultaneously. A source region of the power MISFET and an n | 09-27-2012 |
| 20120241856 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - In a power MISFET having a trench gate structure with a dummy gate electrode, a technique is provided for improving the performance of the power MISFET, while preventing electrostatic breakdown of a gate insulating film therein. A power MISFET having a trench gate structure with a dummy gate electrode, and a protective diode are formed on the same semiconductor substrate. The protective diode is provided between a source electrode and a gate interconnection. In a manufacturing method of such a semiconductor device, a polycrystalline silicon film for the dummy gate electrode and a polycrystalline silicon film for the protective diode are formed simultaneously. A source region of the power MISFET and an n | 09-27-2012 |
