Patent application number | Description | Published |
20080246867 | SOLID-STATE IMAGE PICKUP APPARATUS AND METHOD FOR DRIVING SOLID-STATE IMAGE PICKUP APPARATUS - A solid-state image pickup apparatus includes rows and columns of pixels, each column or each set of a plurality of columns being provided with an analog-to-digital converter. When an operation for holding analog electric signals performed by the analog-to-digital converters is performed simultaneously with an operation for outputting data from memories holding digital signals that are output from the analog-to-digital converters, “streaky noise” artifacts appear on an image obtained by such operations. To avoid this, the operation for holding the analog electric signals and the operation for outputting data from the memories holding the digital signals are set apart from each other by at least one data clock period of a scanning circuit. | 10-09-2008 |
20090009372 | PHOTOELECTRIC CONVERSION APPARATUS - Providing a configuration that, when an AD converter is provided for each of pixel columns, enables each of the elements to be arranged without increasing the element arrangement pitch. A photoelectric conversion apparatus according to the present invention includes a plurality of AD converters. The AD converter includes: an arithmetic operation amplifying circuit unit, a comparator circuit unit for comparing, with a reference signal, an output from the arithmetic operation amplifying circuit unit; a DA converted circuit unit for DA converting a signal based on a signal from the comparator circuit unit; and a sampling and holding unit arranged at an input section of the arithmetic operation amplifying circuit unit. The DA converted circuit unit is arranged between the comparator circuit unit and the arithmetic operation amplifying circuit unit. | 01-08-2009 |
20090015690 | IMAGING APPARATUS AND IMAGING METHOD - The object is to determine an appropriate light exposure condition thereby to generate an appropriate synthesized image signal for an imaging scene for which an appropriate light exposure condition cannot be obtained by conventional techniques. There is provided an imaging apparatus including: a light exposure condition determining unit for determining a plurality of light exposure conditions based on a histogram of the luminance distribution of an imaging scene; an imaging unit for imaging, at plural times, the imaging scene under the plurality of light exposure conditions determined, and generating a first raw image signal and a second raw image signal; and an image synthesizing unit for synthesizing the first raw image signal and the second raw image signal using, as a boundary, a reference value in the first raw image signal to generate a synthesized image signal, wherein the light exposure condition determining unit determines at least one light exposure condition of the plurality of light exposure conditions so that the reference value in the first raw image signal corresponds to the luminance value at the bottom of a ravine of the histogram of the luminance distribution of the imaging scene. | 01-15-2009 |
20090073142 | TOUCH PANEL - A touch panel includes a light guide including a first face for detecting the position of an object in contact therewith and a second face opposite the first face, and a line sensor for receiving light emitted from a side face of the light guide plate, wherein, of light irradiated from the second face side, the light guide guides toward the side face the portion of light reflected by the object. | 03-19-2009 |
20090244328 | IMAGE PICKUP DEVICE AND SIGNAL PROCESSING METHOD THEREOF - An image pickup device is provided, capable of complete correction with data of once analog-to-digital conversion, and prevention of excess use of switches and analog devices and/or erroneous correction, including: an image sensor having a plurality of analog-to-digital converters determining conversion results from a digital signal of higher order bit through separate steps of two or more times; a first correction unit which has a correction factor for correcting nonlinear errors of the plurality of analog-to-digital converters so as to adapt to the analog-to-digital converters and corrects a nonlinear error of a digital signal output from respective analog-to-digital converters based on a correction factor corresponding to respective analog-to-digital converters, characterized in that the first correction unit corrects the nonlinear errors after converting the digital signals from the plurality of analog-to-digital converters into a serial output. | 10-01-2009 |
20090251578 | IMAGE PICKUP DEVICE AND IMAGE PICKUP SYSTEM - In an image pickup device with A/D converters at each column signal line, improvements in the A/D conversion speed and accuracy in image sensors having A/D converters are achieved. In an image pickup device wherein sensing elements are arranged in a matrix and A/D converters are arranged for each column signal line, the A/D converter first retains in its memory unit as an initial value an electric signal corresponding to the signal of the sensing element which is an analog signal, then initiates charge or discharge of the memory unit at a rate corresponding to the size of an input fixed signal, measures the time period from either the charge start time or the discharge start time until the memory unit electric signal becomes equal to the reference signal, and then recognizes the measured time period as a digital value. | 10-08-2009 |
20090256176 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus, controlling a potential on a semiconductor substrate for an electronic shutter operation, includes: a first semiconductor region of the first conductivity type for forming a photoelectric conversion region; a second semiconductor region of the first conductivity type, formed separately from the photoelectric conversion region, for accumulating carriers; a third semiconductor region of a second conductivity type arranged under the second semiconductor region, for operating as a potential barrier; a fourth semiconductor region of the second conductivity type extending between the first semiconductor region and the semiconductor substrate, and between the third semiconductor region and the semiconductor substrate; and a first voltage supply portion for supplying a voltage to the third semiconductor region; wherein the first voltage supply portion includes a fifth semiconductor region of the second conductivity type arranged in the pixel region, and a first electrode connected to the fifth semiconductor region. | 10-15-2009 |
20090284632 | DRIVING METHOD OF SOLID-STATE IMAGING APPARATUS AND SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus comprises a pixel portion including a plurality of pixels, wherein each pixel including a photoelectric conversion portion, an accumulation portion for accumulating the charge, a first transfer portion connecting the photoelectric conversion portion to the accumulation portion, a second transfer portion connecting the accumulation portion to a floating diffusion portion, and a third transfer portion connecting the photoelectric conversion portion to a power source, and wherein, from a state where no potential barrier is formed in the second transfer portion, a potential barrier is formed in the second transfer portion under a condition that a potential barrier is formed in the first transfer portion and no potential barrier is formed in the third transfer portion, and then a potential barrier is formed in the third transfer portion, thereby the operation of accumulating charges in the pixels is started. | 11-19-2009 |
20100053398 | SOLID-STATE IMAGING APPARATUS - The present invention provides a imaging apparatus including a plurality of pixels, each of the pixels including: a photoelectric conversion unit; a charge accumulating unit; an amplifying unit, and a transfer electrode, wherein the solid-state imaging apparatus includes a light shielding portion covering the charge accumulating unit, and a connecting unit for electrically connecting the control electrode and the light shielding portion, and wherein the light shielding portion of the pixel in one row is electrically connected to the other light shielding portions of the other pixels in the same row and adjacent to the pixel in the one row, and is electrically insulated from other light shielding portions of pixels in rows different from the one row. | 03-04-2010 |
20100090092 | IMAGE PICKUP APPARATUS - An apparatus includes pixels each having a transistor that transfers a charge of a photoelectric conversion unit, an amplification unit that receives the transferred charge, a scanning unit that supplies, to the transistor, a conductive pulse, a non-conductive pulse, and an intermediate-level pulse having a peak value between the conductive pulse and the non-conductive pulse, a generating unit that generates an image signal using a signal based on a charge transferred in response to the conductive and intermediate-level pulses, and a control unit that changes at least one of a pulse width of the intermediate-level pulse and the peak value in accordance with information on the detected temperature. The conductive and intermediate-level pulses are supplied to the transistor during a light shielding period of the photoelectric conversion unit. | 04-15-2010 |
20100091157 | SOLID STATE IMAGE PICKUP APPARATUS - An apparatus includes a plurality of pixels each including a charge storage part, a photoelectric conversion part, a first transfer part and a second transfer part, when a signal charge generated during one period is transferred to an amplifier, a control unit supplies pulses such that a turning-on pulse is supplied to the second transfer part while supplying a turning-off pulse to the first transfer part thereby transferring the stored signal charge to the amplifier, a turning-on pulse is then supplied to a reset part to reset the signal charge transferred to the amplifier, and subsequently a turning-on pulse is supplied to the first transfer part and the second transfer part to transfer the signal charge held in the photoelectric conversion part to the amplifier. | 04-15-2010 |
20100091158 | IMAGE PICKUP APPARATUS - In an apparatus, operation is switchable between first and second modes. In the first mode, a photoelectric conversion part and a charge storage part are released from a reset state for all pixels included in an image acquisition area to start a period, and, when a predetermined time has elapsed, the photoelectric conversion part and an overflow drain region of each pixel are turned onto end the period, and finally the charge stored in the charge storage part is transferred to the amplifier part. In the second mode, after a mechanical shutter is opened to start a period, the mechanical shutter is closed to end the period, and stored charge is transferred to the amplifier part. | 04-15-2010 |
20100165167 | SOLID-STATE IMAGING APPARATUS, DRIVING METHOD OF THE SAME AND IMAGING SYSTEM - A solid-state imaging apparatus has a plurality of pixels, wherein each of the pixels includes: a photoelectric conversion element for converting incident light to an electric charge; an accumulating element accumulating the electric charge converted by the photoelectric conversion element; a first transfer element for transferring the electric charge converted by the photoelectric conversion element to the accumulating element; a second transfer element for transferring the electric charge accumulated in the accumulating element to a floating diffusion region; and an amplifying element for amplifying the electric charge in the floating diffusion region, wherein the first transfer element transfers the electric charge converted by the photoelectric conversion element to the accumulating element a plurality of times and causes the accumulating element to cumulatively accumulate the electric charge transferred the plurality of times. | 07-01-2010 |
20100200738 | PHOTOELECTRIC CONVERSION DEVICE AND IMAGING SYSTEM - A photoelectric conversion device comprises: a plurality of photoelectric conversion elements each having a photo-sensing surface; insulation films; a plurality of light-guiding portions arranged above the insulation films, each of the plurality of light-guiding portions guiding light on the photo-sensing surface of each of the plurality of photoelectric conversion elements; and boundary portions, each of the boundary portions defines a boundary between the adjacent light-guiding portions and is formed of a material lower in refractive index than a material that forms the plurality of light-guiding portions, wherein a width of each of the boundary portions is not more than half a shortest wavelength in a wavelength range of visible light, and a height from a lower surface to an upper surface of each of the plurality of light-guiding portions is not less than double a longest wavelength in the wavelength range of visible light. | 08-12-2010 |
20100328302 | SOLID-STATE IMAGING APPARATUS AND DRIVING METHOD THEREOF - A solid-state imaging apparatus includes the carrier holding portion and the amplifying portion in each pixel, wherein a first voltage supplied to a transfer electrode when the transfer portion for transferring carriers from the carrier holding portion to the amplifying portion is placed in a non-conducting state is opposite in polarity to a voltage supplied to the transfer electrode during the turning on period of the transfer portion, and a second voltage supplied to the control electrode of the carrier holding portion during a holding period in which the carriers are retained in the carrier holding portion is the same in polarity as the first voltage and is larger in absolute value than the first voltage. | 12-30-2010 |
20100328509 | PHOTOELECTRIC CONVERSION APPARATUS, CONTROL METHOD THEREOF, IMAGING APPARATUS, AND IMAGING SYSTEM - Each pixel has a photoelectric conversion unit configured to convert light into electrical charges and to store the electrical charges, an amplifying unit configured to amplify a signal based on the electrical charges stored in the photoelectric conversion unit and to output the signal to an output line, and a reset unit configured to reset a input part of the amplifying unit. A clip unit, which is configured to limit an electric voltage of the output line, includes an amplifying circuitry for amplifying a signal based on the electric voltage of the output line and an MOS transistor for limiting the electric voltage of the output line based on the difference in electric potential between the gate and source. The clip unit controls the electric potential of the gate of the MOS transistor by the amplifying circuitry. | 12-30-2010 |
20110007196 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus including a plurality of pixels each including: a first holding portion for holding signal carriers from a photoelectric conversion portion; an amplifying portion for amplifying and reading a signal based on the signal carriers generated in the photoelectric conversion portion; and a carrier discharging control portion for discharging charge carriers in the photoelectric conversion portion to an OFD region, and having a carrier path between the photoelectric conversion portion and the first carrier holding portion, in which the solid-state imaging apparatus further includes a second carrier holding portion electrically connected with the first carrier portion in parallel through a first transfer unit, when viewed from an output node of the photoelectric conversion portion, thereby smoothing an movie imaging without causing discontinuous frame while suppressing generation of noise mixing into the charge carrier holding portion. | 01-13-2011 |
20110013062 | SOLID-STATE IMAGING APPARATUS - In the solid-state imaging apparatus, the carrier holding portion is arranged at a position in a first direction from a photoelectric conversion portion, a floating diffusion region is arranged at a position in a second direction perpendicular to the first direction from the carrier holding portion with a transfer portion sandwiched between the floating diffusion region and the carrier holding portion, the carrier holding portion included in the first pixel is arranged between the photoelectric conversion portion included in the first pixel and the photoelectric conversion portion included in the second pixel, the carrier holding portion included in the first pixel is covered with a light shielding portion, and the light shielding portion extends over a part of each of the photoelectric conversion portions included in the first and second pixels. | 01-20-2011 |
20110013067 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE SAME - A photoelectric conversion apparatus includes: a first semiconductor region forming a part of a photoelectric conversion element; a second semiconductor region stacked on the first semiconductor region, and forming a part of the photoelectric conversion element; a third semiconductor region to which a signal charge transferred from the photoelectric conversion element; a fourth semiconductor region of the first conductivity type having an higher impurity concentration, between the first and third semiconductor region and between the second and third semiconductor regions, closer to a main surface than the first semiconductor region, and connected to the first semiconductor region; a first gate electrode over the fourth semiconductor region, an insulating film on the main surface and between the first gate electrode and the fourth semiconductor region; and a second gate electrode between the third and fourth semiconductor regions, and over the insulating film. | 01-20-2011 |
20110025896 | DRIVING METHOD FOR SOLID-STATE IMAGING APPARATUS, AND IMAGING SYSTEM - A driving method for a solid-state imaging apparatus including a plurality of pixels is provided. A potential of the electric charge accumulated in an accumulating portion is lower than a potential of a first transferring portion for connecting a photoelectric conversion element to the accumulating portion for accumulating an electric charge. The driving method includes: a first driving mode setting a start and an end of an operation of accumulating the electric charge in each of the plurality of pixels common for the plurality of pixels; and a second driving mode setting the start and the end of the operation of accumulating the electric charge in each of the plurality of pixels common for the pixels in each row. | 02-03-2011 |
20110032379 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE SAME - In a photoelectric conversion apparatus including charge storing portions in its imaging region, isolation regions for the charge storing portions include first isolation portion each having a PN junction, and second isolation portions each having an insulator. A second isolation portion is arranged between a charge storing portion and at least a part of a plurality of transistors. | 02-10-2011 |
20110080492 | SOLID-STATE IMAGE SENSOR AND IMAGE SENSING APPARATUS - In an image sensor including a first column readout line and a second column readout line provided to each pixel column, a plurality of pixel rows are divided into pixel rows of a first group and pixel rows of a second group, pixels of the pixel rows of the first group output signals to the first column readout line, and pixels of the pixel rows of the second group output signals to the second column readout line. A shortest distance between a conversion region of a first pixel of a pixel row of the first group and the first column readout line to which a signal from the first pixel is output is not more than a shortest distance between the conversion region of the first pixel and the second column readout line to which the signals from the pixels belonging to the pixel rows of the second group are output. | 04-07-2011 |
20110080493 | SOLID-STATE IMAGE SENSOR AND IMAGE SENSING APPARATUS - In a solid-state image sensor, first and second column readout lines are provided to each pixel column, pixel rows are divided into pixel rows of first and second groups, the first group is divided into subgroups each formed from pixels of an identical color, the second group is divided into subgroups each formed from pixels of an identical color, signals from pixels of the pixel rows of the first group are output to the first column readout lines, and signals from pixels of the pixel rows of the second group are output to the second column readout lines. Pixels of an identical subgroup in an identical pixel column share a conversion region and an amplification element, a given conversion region and another conversion region included in a pixel column identical to a pixel column of the given conversion region do not intersect with each other. | 04-07-2011 |
20110084316 | PICKUP DEVICE AND METHOD FOR MANUFACTURING THE SAME - A pickup device according to the present invention includes a photoelectric conversion portion, a charge holding portion configured to include a first semiconductor region, and a transfer portion configured to include a transfer gate electrode that controls a potential between the charge holding portion and a sense node. A second semiconductor region is disposed on a surface of a semiconductor region between the control electrode and the transfer gate electrode. A third semiconductor region is disposed below the second semiconductor region. An impurity concentration of the third semiconductor region is higher than the impurity concentration of the first semiconductor region. | 04-14-2011 |
20110128424 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus which performs a global exposure operation, in a determined imaging region, for performing exposure as matching respective start times and respective end times of all rows, comprises: plural unit pixels arranged in two-dimensional matrix and each comprising a photoelectric converting unit for generating a pixel signal by photoelectric conversion, a holding unit for holding the generated pixel signal, and a first gate for transferring the generated pixel signal to the holding unit; a first controlling line connected commonly to the first gates in the unit pixels on the same row; a vertical controlling circuit for resetting the unit pixel; and a first driving line connected to the first controlling line, and not connected to and thus independent of the vertical controlling circuit, thereby enabling to reduce a current flowing in a power supply of the vertical controlling circuit when driving electrodes of the holding units. | 06-02-2011 |
20110168872 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus, controlling a potential on a semiconductor substrate for an electronic shutter operation, includes: a first semiconductor region of the first conductivity type for forming a photoelectric conversion region; a second semiconductor region of the first conductivity type, formed separately from the photoelectric conversion region, for accumulating carriers; a third semiconductor region of a second conductivity type arranged under the second semiconductor region, for operating as a potential barrier; a fourth semiconductor region of the second conductivity type extending between the first semiconductor region and the semiconductor substrate, and between the third semiconductor region and the semiconductor substrate; and a first voltage supply portion for supplying a voltage to the third semiconductor region; wherein the first voltage supply portion includes a fifth semiconductor region of the second conductivity type arranged in the pixel region, and a first electrode connected to the fifth semiconductor region. | 07-14-2011 |
20110234868 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM - A photoelectric conversion apparatus comprises multiple photoelectric conversion portions ( | 09-29-2011 |
20110242380 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus is provided that including a plurality of amplifiers each one amplifying a signal from each one of a plurality of pixels. The amplifier including first and second field effect transistors, gate electrodes of which are connected to the same voltage node (VBL); and a first wiring connected between the voltage node and the gate electrodes of the first and second field effect transistors. The first and second field effect transistors are arranged in a direction perpendicular to a direction in which the plurality of amplifiers is arranged. Material of the first wiring has a resistivity smaller than that of the gate electrodes of the first and second field effect transistors. | 10-06-2011 |
20110273598 | SOLID-STATE IMAGE SENSOR AND CAMERA - A solid-state image sensor comprises a pixel array in which a plurality of pixels are two-dimensionally arranged, and a plurality of column signal processing circuits which read out signals from the pixel array via a plurality of column signal lines arranged in correspondence with respective columns of the pixel array, wherein signals of the pixels of different colors in the pixel array are read out by the plurality of column signal processing circuits during a single period, and wherein at least the column signal processing circuits which process signals of the pixels of different colors, of the plurality of column signal processing circuits, are driven via conductive lines which are separated from each other in a region where at least the column signal processing circuits which process signals of the pixels of different colors are arranged. | 11-10-2011 |
20120006993 | SOLID-STATE IMAGING APPARATUS AND IMAGING SYSTEM - An imaging apparatus has an imaging area formed by arranging a plurality of imaging blocks each including a pixel array, a plurality of vertical signal lines, a horizontal output line commonly provided for the plurality of vertical signal lines to read out signals read out to the plurality of vertical signal lines, a first scanning circuit, and a second scanning circuit, wherein signals of the pixels of a selected row in the pixel array are read out to the plurality of vertical signal lines in accordance with a driving pulse from the first scanning circuit, the signals read out to the plurality of vertical signal lines are sequentially read out to the horizontal output line in accordance with a driving pulse from the second scanning circuit, and a length in a row direction of the pixel array is smaller than a length in a column direction of the pixel array. | 01-12-2012 |
20120007197 | SOLID-STATE IMAGING APPARATUS AND IMAGING SYSTEM - A solid-state imaging apparatus comprising a plurality of pixels each including a photoelectric conversion element, and a light shielding layer which covers the photoelectric conversion element is provided. The light shielding layer comprises a first light shielding portion which covers at least part of a region between the photoelectric conversion elements that are adjacent to each other, and a second light shielding portion for partially shielding light incident on the photoelectric conversion element of each of the plurality of pixels. An aperture is provided for the light shielding layer, the remaining component of the incident light passing through the aperture. A shape of the aperture includes a cruciform portion including a portion extending in a first direction and a portion extending in a second direction that intersects the first direction. | 01-12-2012 |
20120007203 | SOLID-STATE IMAGING APPARATUS AND IMAGING SYSTEM - A solid-state imaging apparatus including pixels each including a photoelectric conversion element, and a light shielding layer covering the photoelectric conversion element is provided. For each of the photoelectric conversion elements, the light shielding layer includes a light shielding portion which shields a portion of incident light to the photoelectric conversion element, and an aperture which passes another portion of the incident light. The pixels include first and second pixels which have different areas on a planar view of the photoelectric conversion element. The area of the photoelectric conversion element in the first pixel is larger than the area of the photoelectric conversion element in the second pixel on the planar view. An area of the light shielding portion included in the first pixel is larger than an area of the light shielding portion included in the second pixel. | 01-12-2012 |
20120008030 | SOLID-STATE IMAGING APPARATUS AND IMAGING SYSTEM - A solid-state imaging apparatus including a plurality of pixels each having a photoelectric conversion element, and an amplifier circuit which amplifies and outputs signals of the plurality of pixels is provided. The plurality of pixels include a first pixel having a first photoelectric conversion element with a first sensitivity and a second pixel having a second photoelectric conversion element with a second sensitivity higher than the first sensitivity. The amplifier circuit amplifies a signal output from the first pixel by a first gain and a signal output from the second pixel by a second gain smaller than the first gain. | 01-12-2012 |
20120008031 | SOLID-STATE IMAGING APPARATUS AND IMAGING SYSTEM - A solid-state imaging apparatus has a pixel array in which a plurality of pixels are arranged to form a plurality of rows and a plurality of columns, and a plurality of column signal lines are arranged, wherein each of the plurality of pixels includes a photoelectric converter including a first well formed in a semiconductor substrate and having a first conductivity type, and an impurity region arranged in the first well and having a second conductivity type different from the first conductivity type, and an in-pixel readout circuit which outputs, to the column signal line, a signal corresponding to charges generated in the photoelectric converter, the in-pixel readout circuit including a circuit element arranged in a second well having the first conductivity type, and wherein the first well and the second well are isolated by a semiconductor region having the second conductivity type. | 01-12-2012 |
20120008177 | SOLID-STATE IMAGING APPARATUS AND IMAGING SYSTEM - A solid-state imaging apparatus includes a pixel array in which a plurality of unit cells are arranged to form a plurality of rows and a plurality of columns, wherein each of the plurality of unit cells includes a pixel, and the pixel comprising a photoelectric conversion element and an in-pixel readout circuit which outputs a signal corresponding to charges generated in the photoelectric conversion element, power is supplied to the plurality of unit cells via a power supply line and a ground line, and at least one of the plurality of unit cells includes at least a part of a capacitive element having a first electrode connected to the power supply line and a second electrode connected to the ground line. | 01-12-2012 |
20120057072 | FOCUS ADJUSTMENT APPARATUS AND IMAGE CAPTURING APPARATUS - A focus adjustment apparatus for performing focus adjustment using a captured image and a plurality of point spread functions prepared in advance for each defocus direction and defocus amount is provided. The apparatus includes a focus adjusting stop whose aperture does not have rotational symmetry about an optical axis. Focus adjustment is performed by comparing the plurality of point spread functions prepared in advance with a point spread function of an image captured using the focus adjusting stop and not having rotational symmetry about the optical axis, obtaining the defocus direction and the defocus amount, and performing the focus adjustment according to the obtained defocus direction and defocus amount. | 03-08-2012 |
20120085889 | IMAGE PICKUP APPARATUS - An apparatus includes pixels each having a transistor that transfers a charge of a photoelectric conversion unit, an amplification unit that receives the transferred charge, a scanning unit that supplies, to the transistor, a conductive pulse, a non-conductive pulse, and an intermediate-level pulse having a peak value between the conductive pulse and the non-conductive pulse, a generating unit that generates an image signal using a signal based on a charge transferred in response to the conductive and intermediate-level pulses, and a control unit that changes at least one of a pulse width of the intermediate-level pulse and the peak value in accordance with information on the detected temperature. The conductive and intermediate-level pulses are supplied to the transistor during a light shielding period of the photoelectric conversion unit. | 04-12-2012 |
20120127355 | DRIVING METHOD OF SOLID-STATE IMAGING APPARATUS AND SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus comprises a pixel portion including a plurality of pixels, wherein each pixel including a photoelectric conversion portion, an accumulation portion for accumulating the charge, a first transfer portion connecting the photoelectric conversion portion to the accumulation portion, a second transfer portion connecting the accumulation portion to a floating diffusion portion, and a third transfer portion connecting the photoelectric conversion portion to a power source, and wherein, from a state where no potential barrier is formed in the second transfer portion, a potential barrier is formed in the second transfer portion under a condition that a potential barrier is formed in the first transfer portion and no potential barrier is formed in the third transfer portion, and then a potential barrier is formed in the third transfer portion, thereby the operation of accumulating charges in the pixels is started. | 05-24-2012 |
20120193745 | SOLID-STATE IMAGE PICKUP DEVICE - A photoelectric conversion portion, a charge holding portion, a transfer portion, and a sense node are formed in a P-type well. The charge holding portion is configured to include an N-type semiconductor region, which is a first semiconductor region holding charges in a portion different from the photoelectric conversion portion. A P-type semiconductor region having a higher concentration than the P-type well is disposed under the N-type semiconductor region. | 08-02-2012 |
20120194696 | SOLID-STATE IMAGE SENSOR AND CAMERA - A solid-state image sensor includes a plurality of pixels for focus detection by a phase difference detection scheme. The pixel includes a semiconductor region provided therein with a plurality of photoelectric converters configured so that signals therefrom are independently read out, a microlens, and a lens surface arranged between the microlens and the semiconductor region, wherein the lens surface exerts a negative power on light which passes through the microlens toward the semiconductor region. | 08-02-2012 |
20120194714 | SOLID-STATE IMAGE SENSOR AND CAMERA - A solid-state image sensor includes a semiconductor region including a plurality of photoelectric converters from which signals are allowed to be independently read out; a first microlens; and a second microlens which is arranged between the first microlens and the semiconductor region, wherein the second microlens includes a central portion and a peripheral portion that surrounds the central portion, and a power of the peripheral portion is a positive value and larger than a power of the central portion. | 08-02-2012 |
20120199933 | SOLID-STATE IMAGE PICKUP DEVICE - A solid-state image pickup device includes a plurality of pixels, each of the pixels including a photoelectric conversion portion, a charge holding portion, a floating diffusion, and a transfer portion. The pixel also includes a beneath-holding-portion isolation layer and a pixel isolation layer. An end portion on a photoelectric conversion portion side of the pixel isolation layer is away from the photoelectric conversion portion compared to an end portion on a photoelectric conversion portion side of the beneath-holding-portion isolation layer, and an N-type semi-conductor region constituting part of the photoelectric conversion portion is disposed under at least part of the beneath-holding-portion isolation layer. | 08-09-2012 |
20120199934 | SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR MANUFACTURING THE SAME - A solid-state image pickup device includes a photoelectric conversion portion, a charge holding portion configured to include a first-conductivity-type first semiconductor region, and a transfer portion configured to include a transfer gate electrode that controls a potential between the charge holding portion and a sense node. The charge holding portion includes a control electrode. A second-conductivity-type second semiconductor region is disposed on a surface of a semiconductor region between the control electrode and the transfer gate electrode. A first-conductivity-type third semiconductor region is disposed under the second semiconductor region. The third semiconductor region is disposed at a deeper position than the first semiconductor region. | 08-09-2012 |
20120236189 | IMAGE PICKUP APPARATUS - In an apparatus, operation is switchable between first and second modes. In the first mode, a photoelectric conversion part and a charge storage part are released from a reset state for all pixels included in an image acquisition area to start a period, and, when a predetermined time has elapsed, the photoelectric conversion part and an overflow drain region of each pixel are turned onto end the period, and finally the charge stored in the charge storage part is transferred to the amplifier part. In the second mode, after a mechanical shutter is opened to start a period, the mechanical shutter is closed to end the period, and stored charge is transferred to the amplifier part. | 09-20-2012 |
20120298841 | SOLID-STATE IMAGE PICKUP APPARATUS - Provided is a back-illuminated solid-state image pickup apparatus having an improved color separation characteristic. A photo detector includes a first photo detector unit and a second photo detector unit disposed deeper than the first photo detector unit with respect to a back surface of a semiconductor substrate, wherein the first photo detector unit includes a first-conductivity-type first semiconductor region where carriers generated through photo-electric conversion are collected as signal carriers. A readout portion includes a first-conductivity-type second semiconductor region extending in a depth direction such that the carriers collected in the first semiconductor region are read out to a front surface of the semiconductor substrate. A unit that reduces the amount of light incident on the second semiconductor region is provided. | 11-29-2012 |
20120300106 | SOLID-STATE IMAGE PICKUP APPARATUS, AND IMAGE PICKUP SYSTEM USING SOLID-STATE IMAGE PICKUP APPARATUS - A solid-state image pickup apparatus includes a photoelectric conversion unit, a charge storage unit, and a floating diffusion unit, all disposed on a semiconductor substrate. The solid-state image pickup apparatus further includes a first gate electrode disposed on the semiconductor substrate and extending between the photoelectric conversion unit and charge storage unit, and a second gate electrode disposed on the semiconductor substrate and extending between the charge storage unit and the floating diffusion unit. The solid-state image pickup apparatus further includes a light shielding member including a first part and a second part, wherein the first part is disposed over the charge storage unit and at least over the first gate electrode or the second gate electrode, and the second part is disposed between the first gate electrode and the second gate electrode such that the second part extends from the first part toward a surface of the semiconductor substrate. | 11-29-2012 |
20120312964 | IMAGE PICKUP APPARATUS - An image pickup apparatus includes a plurality of pixels each including a read-out node to which an electric charge generated in a photoelectric conversion unit is transferred, an output unit configured to convert the electric charge transferred to the read-out node into a voltage and output the resultant voltage to a signal line, and a switch including a first node electrically connected to the read-out node. Each switch includes a second node different from the first node, and a particular number of second nodes are electrically connected to a common bypass wiring. | 12-13-2012 |
20120312965 | SOLID-STATE IMAGE PICKUP DEVICE AND METHOD OF DRIVING THE SAME - A solid-state image pickup device which includes, on a semiconductor substrate, an image pickup area which includes plural columns of pixels, and plural column amplifier circuits each provided at each column of pixels or at every plural columns of pixels, wherein: each of the column amplifier circuits includes at least two amplifier circuit stages; a preceding amplifier circuit is a variable-gain amplifier circuit and the switchable gains include plural one or more gains; and a subsequent amplifier circuit is capable of amplifying, at one or more gains, the signal amplified at one or more gains in the preceding amplifier circuit. | 12-13-2012 |
20130087875 | PHOTOELECTRIC CONVERSION DEVICE AND IMAGING SYSTEM - In a photoelectric conversion device capable of adding signals of photoelectric conversion elements included in each of photoelectric conversion units, each of the photoelectric conversion elements includes a first semiconductor region of a first conductivity type for collecting a signal charge, a second semiconductor region of a second conductivity type is arranged between the photoelectric conversion elements arranged adjacent to each other and included in the photoelectric conversion unit, and a third semiconductor region of the second conductivity type is arranged between the photoelectric conversion elements arranged adjacent to each other among the plurality of photoelectric conversion elements and included in different photoelectric conversion units arranged adjacent to each other. An impurity concentration of the second semiconductor region is lower than an impurity concentration of the third semiconductor region. | 04-11-2013 |
20130105931 | SOLID-STATE IMAGING APPARATUS | 05-02-2013 |
20130187210 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE SAME - In a photoelectric conversion apparatus including charge storing portions in its imaging region, isolation regions for the charge storing portions include first isolation portion each having a PN junction, and second isolation portions each having an insulator. A second isolation portion is arranged between a charge storing portion and at least a part of a plurality of transistors. | 07-25-2013 |
20130193497 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE SAME - A photoelectric conversion apparatus includes: a first semiconductor region forming a part of a photoelectric conversion element; a second semiconductor region stacked on the first semiconductor region, and forming a part of the photoelectric conversion element; a third semiconductor region to which a signal charge transferred from the photoelectric conversion element; a fourth semiconductor region of the first conductivity type having an higher impurity concentration, between the first and third semiconductor region and between the second and third semiconductor regions, closer to a main surface than the first semiconductor region, and connected to the first semiconductor region; a first gate electrode over the fourth semiconductor region, an insulating film on the main surface and between the first gate electrode and the fourth semiconductor region; and a second gate electrode between the third and fourth semiconductor regions, and over the insulating film. | 08-01-2013 |
20130206964 | SOLID-STATE IMAGING APPARATUS WITH EACH PIXEL INCLUDING A PHOTOELECTRIC CONVERSION PORTION AND PLURAL HOLDING PORTIONS - A solid-state imaging apparatus including a plurality of pixels each including: a first holding portion for holding signal carriers from a photoelectric conversion portion; an amplifying portion for amplifying and reading a signal based on the signal carriers generated in the photoelectric conversion portion; and a carrier discharging control portion for discharging charge carriers in the photoelectric conversion portion to an OFD region, and having a carrier path between the photoelectric conversion portion and the first carrier holding portion, in which the solid-state imaging apparatus further includes a second carrier holding portion electrically connected with the first carrier portion in parallel through a first transfer unit, when viewed from an output node of the photoelectric conversion portion, thereby smoothing an movie imaging without causing discontinuous frame while suppressing generation of noise mixing into the charge carrier holding portion. | 08-15-2013 |
20130206965 | DRIVING METHOD FOR SOLID-STATE IMAGING APPARATUS, AND IMAGING SYSTEM - A driving method for a solid-state imaging apparatus including a plurality of pixels is provided. A potential of the electric charge accumulated in an accumulating portion is lower than a potential of a first transferring portion for connecting a photoelectric conversion element to the accumulating portion for accumulating an electric charge. The driving method includes: a first driving mode setting a start and an end of an operation of accumulating the electric charge in each of the plurality of pixels common for the plurality of pixels; and a second driving mode setting the start and the end of the operation of accumulating the electric charge in each of the plurality of pixels common for the pixels in each row. | 08-15-2013 |
20130208156 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus which performs a global exposure operation, in a determined imaging region, for performing exposure as matching respective start times and respective end times of all rows, comprises: plural unit pixels arranged in two-dimensional matrix and each comprising a photoelectric converting unit for generating a pixel signal by photoelectric conversion, a holding unit for holding the generated pixel signal, and a first gate for transferring the generated pixel signal to the holding unit; a first controlling line connected commonly to the first gates in the unit pixels on the same row; a vertical controlling circuit for resetting the unit pixel; and a first driving line connected to the first controlling line, and not connected to and thus independent of the vertical controlling circuit, thereby enabling to reduce a current flowing in a power supply of the vertical controlling circuit when driving electrodes of the holding units. | 08-15-2013 |
20130221202 | SOLID STATE IMAGE PICKUP APPARATUS - An apparatus includes a plurality of pixels each including a charge storage part, a photoelectric conversion part, a first transfer part and a second transfer part, when a signal charge generated during one period is transferred to an amplifier, a control unit supplies pulses such that a turning-on pulse is supplied to the second transfer part while supplying a turning-off pulse to the first transfer part thereby transferring the stored signal charge to the amplifier, a turning-on pulse is then supplied to a reset part to reset the signal charge transferred to the amplifier, and subsequently a turning-on pulse is supplied to the first transfer part and the second transfer part to transfer the signal charge held in the photoelectric conversion part to the amplifier. | 08-29-2013 |
20130222658 | SOLID-STATE IMAGING APPARATUS - In the solid-state imaging apparatus, the carrier holding portion is arranged at a position in a first direction from a photoelectric conversion portion, a floating diffusion region is arranged at a position in a second direction perpendicular to the first direction from the carrier holding portion with a transfer portion sandwiched between the floating diffusion region and the carrier holding portion, the carrier holding portion included in the first pixel is arranged between the photoelectric conversion portion included in the first pixel and the photoelectric conversion portion included in the second pixel, the carrier holding portion included in the first pixel is covered with a light shielding portion, and the light shielding portion extends over a part of each of the photoelectric conversion portions included in the first and second pixels. | 08-29-2013 |
20130235244 | IMAGE PICKUP DEVICE AND SIGNAL PROCESSING METHOD THEREOF - An image pickup device is provided, capable of complete correction with data of once analog-to-digital conversion, and prevention of excess use of switches and analog devices and/or erroneous correction, including: an image sensor having a plurality of analog-to-digital converters determining conversion results from a digital signal of higher order bit through separate steps of two or more times; a first correction unit which has a correction factor for correcting nonlinear errors of the plurality of analog-to-digital converters so as to adapt to the analog-to-digital converters and corrects a nonlinear error of a digital signal output from respective analog-to-digital converters based on a correction factor corresponding to respective analog-to-digital converters, characterized in that the first correction unit corrects the nonlinear errors after converting the digital signals from the plurality of analog-to-digital converters into a serial output. | 09-12-2013 |
20130250137 | SOLID-STATE IMAGE SENSOR AND IMAGE SENSING APPARATUS - In an image sensor including a first column readout line and a second column readout line provided to each pixel column, a plurality of pixel rows are divided into pixel rows of a first group and pixel rows of a second group, pixels of the pixel rows of the first group output signals to the first column readout line, and pixels of the pixel rows of the second group output signals to the second column readout line. A shortest distance between a conversion region of a first pixel of a pixel row of the first group and the first column readout line to which a signal from the first pixel is output is not more than a shortest distance between the conversion region of the first pixel and the second column readout line to which signals from the pixels belonging to the pixel rows of the second group are output. | 09-26-2013 |
20130299678 | SOLID-STATE IMAGING APPARATUS AND IMAGING SYSTEM - An imaging apparatus has an imaging area formed by arranging a plurality of imaging blocks each including a pixel array, a plurality of vertical signal lines, a horizontal output line commonly provided for the plurality of vertical signal lines to read out signals read out to the plurality of vertical signal lines, a first scanning circuit, and a second scanning circuit, wherein signals of the pixels of a selected row in the pixel array are read out to the plurality of vertical signal lines in accordance with a driving pulse from the first scanning circuit, the signals read out to the plurality of vertical signal lines are sequentially read out to the horizontal output line in accordance with a driving pulse from the second scanning circuit, and a length in a row direction of the pixel array is smaller than a length in a column direction of the pixel array. | 11-14-2013 |
20130300904 | SOLID-STATE IMAGING APPARATUS, DRIVING METHOD OF THE SAME AND IMAGING SYSTEM - A solid-state imaging apparatus has a plurality of pixels, wherein each of the pixels includes: a photoelectric conversion element for converting incident light to an electric charge; an accumulating element accumulating the electric charge converted by the photoelectric conversion element; a first transfer element for transferring the electric charge converted by the photoelectric conversion element to the accumulating element; a second transfer element for transferring the electric charge accumulated in the accumulating element to a floating diffusion region; and an amplifying element for amplifying the electric charge in the floating diffusion region, wherein the first transfer element transfers the electric charge converted by the photoelectric conversion element to the accumulating element a plurality of times and causes the accumulating element to cumulatively accumulate the electric charge transferred the plurality of times. | 11-14-2013 |
20140361346 | SOLID-STATE IMAGE PICKUP DEVICE - A photoelectric conversion portion, a charge holding portion, a transfer portion, and a sense node are formed in a P-type well. The charge holding portion is configured to include an N-type semiconductor region, which is a first semiconductor region holding charges in a portion different from the photoelectric conversion portion. A P-type semiconductor region having a higher concentration than the P-type well is disposed under the N-type semiconductor region. | 12-11-2014 |