Patent application number | Description | Published |
20120003591 | METHOD OF FORMING PATTERN AND DEVELOPER FOR USE IN THE METHOD - Provided is a method of forming a pattern, including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, and (c) developing the exposed film with a developer containing an organic solvent, wherein the developer contains an alcohol compound (X) at a content of 0 to less than 500 ppm based on the total mass of the developer. | 01-05-2012 |
20120058427 | PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM - A pattern forming method, including: (i) forming a film from a chemical amplification resist composition; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film by using a developer containing an organic solvent, wherein the chemical amplification resist composition contains: (A) a resin capable of decreasing a solubility of the resin (A) in the developer containing an organic solvent by an action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and (C) a basic, compound or ammonium salt compound whose basicity decreases upon irradiation with an actinic ray or radiation, and a resist composition used for the pattern forming method and a resist film formed from the resist composition are provided. | 03-08-2012 |
20120077131 | METHOD OF FORMING PATTERN USING ACTINIC-RAY OR RADIATION-SENSITIVE RESIN COMPOSITION, AND PATTERN - According to one embodiment, a method of forming a pattern includes the step of applying an actinic-ray- or radiation-sensitive resin composition on a substrate so as to form a film, the step of selectively exposing the film through a mask and the step of developing the exposed film with the use of a developer containing an organic solvent, wherein the actinic-ray- or radiation-sensitive resin composition contains a resin (A) whose polarity is increased by the action of an acid so that the solubility of the resin in the developer containing an organic solvent is decreased, a photoacid generator (B) that when exposed to actinic rays or radiation, generates an acid containing a fluorine atom and a solvent (C), and wherein the photoacid generator (B) is contained in the composition in a ratio of 8 to 20 mass % based on the total solids of the composition. | 03-29-2012 |
20120148957 | PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM - A pattern forming method includes: (i) forming a film from a chemical amplification resist composition; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film by using an organic solvent-containing developer, wherein the chemical amplification resist composition contains: (A) a resin substantially insoluble in alkali; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a crosslinking agent; and (D) a solvent, a negative chemical amplification resist composition used in the method, and a resist film formed from the negative chemical amplification resist composition. | 06-14-2012 |
20120282548 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM - Provided is a pattern forming method comprising (i) a step of forming a film from an actinic ray-sensitive or radiation-sensitive resin composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the actinic ray-sensitive or radiation-sensitive resin composition comprises (A) a resin capable of decreasing the solubility for an organic solvent-containing developer by the action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (D) a solvent, and (G) a compound having at least either one of a fluorine atom and a silicon atom and having basicity or being capable of increasing the basicity by the action of an acid. | 11-08-2012 |
20120288691 | PATTERN FORMING METHOD, PATTERN, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM - A pattern forming method comprising (i) a step of forming a film from a chemical amplification resist composition (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the chemical amplification resist composition contains (A) a resin containing a repeating unit having two or more hydroxyl groups, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a crosslinking agent and (D) a solvent; a pattern formed by the pattern forming method; a chemical amplification resist composition used in the pattern forming method; and a resist film formed using the chemical amplification resist composition. | 11-15-2012 |
20120321855 | PATTERN FORMING METHOD AND RESIST COMPOSITION - Provided is a method of forming a pattern, ensuring excellent sensitivity, limiting resolving power, roughness characteristic, exposure latitude (EL), dependence on post-exposure bake (PEB) temperature and focus latitude (depth of focus DOF), and a resist composition for use in the method. The method comprises (A) forming a film from a resist composition comprising a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, which resin thus when acted on by an acid decreases its solubility in a developer containing an organic solvent, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent. | 12-20-2012 |
20120322007 | PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM - A pattern forming method comprising (i) a step of forming a film from a chemical amplification resist composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using a developer containing an organic solvent, wherein the resist composition contains (A) a resin, (B) a compound capable of generating a specific acid upon irradiation with an actinic ray or radiation, (C) a crosslinking agent, and (D) a solvent. | 12-20-2012 |
20130017377 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAMEAANM Kataoka; ShoheiAACI ShizuokaAACO JPAAGP Kataoka; Shohei Shizuoka JPAANM Iwato; KaoruAACI ShizuokaAACO JPAAGP Iwato; Kaoru Shizuoka JPAANM Kamimura; SouAACI ShizuokaAACO JPAAGP Kamimura; Sou Shizuoka JPAANM Tsuchihashi; ToruAACI ShizuokaAACO JPAAGP Tsuchihashi; Toru Shizuoka JPAANM Enomoto; YuichiroAACI ShizuokaAACO JPAAGP Enomoto; Yuichiro Shizuoka JPAANM Fujii; KanaAACI ShizuokaAACO JPAAGP Fujii; Kana Shizuoka JPAANM Mizutani; KazuyoshiAACI ShizuokaAACO JPAAGP Mizutani; Kazuyoshi Shizuoka JPAANM Tarutani; ShinjiAACI ShizuokaAACO JPAAGP Tarutani; Shinji Shizuoka JPAANM Kato; KeitaAACI ShizuokaAACO JPAAGP Kato; Keita Shizuoka JP - Provided is an actinic-ray- or radiation-sensitive resin composition and a method of forming a pattern using the same, ensuring excellent the etching resistivity and the stability during a post-exposure delay (PED) period. The composition contains a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, and a compound that generates an acid of pKa≧1.5 when exposed to actinic rays or radiation. | 01-17-2013 |
20130045365 | PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM - A pattern forming method comprising: (i) a step of forming a film from a chemical amplification resist composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the resist composition contains: (A) a resin, (B) a nonionic compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a crosslinking agent, and (D) a solvent. | 02-21-2013 |
20130101812 | METHOD OF FORMING PATTERN - Provided is a method of forming a pattern, including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, and (c) developing the exposed film with a developer containing an organic solvent, wherein the developer contains an ester and a ketone having 7 or more carbon atoms. | 04-25-2013 |
20130113082 | METHOD OF FORMING PATTERN AND DEVELOPER FOR USE IN THE METHOD - Provided is a method of forming a pattern, including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, (c) developing the exposed film with a developer containing an organic solvent, and (d) rinsing the developed film with a rinse liquid containing an organic solvent, which rinse liquid has a specific gravity larger than that of the developer. | 05-09-2013 |
20130122427 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM - A pattern forming, method, includes: (i) forming a film from an actinic ray-sensitive or radiation-sensitive resin composition that contains (A) a compound capable of generating an acid upon irradiation with an actinic ray or radiation and decomposing by an action of an acid to decrease a solubility of the compound (A) for an organic solvent; (ii) exposing the film; and (iii) performing development by using a developer containing an organic solvent. | 05-16-2013 |
20140127629 | METHOD OF FORMING PATTERN - Provided is a method of forming pattern including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, and (c) developing the exposed film with a developer containing a first organic solvent, wherein in the developer, particles each having a diameter of 0.3 μm or greater amount to a density of 30 particles/ml or less. | 05-08-2014 |