Patent application number | Description | Published |
20120280185 | Method for Forming an Ink - A method for forming an ink is disclosed. The method includes steps of forming at least one of metal ions and metal complex ions, forming metal chalcogenide nanoparticles, forming a first solution to include the metal chalcogenide nanoparticles and the at least one of metal ions and metal complex ions, wherein metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions are selected from group I, group II, group III or group IV of periodic table and repeating at least one forming step of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions, and forming the first solution as the ink if metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions do not include all metal elements of a chalcogenide semiconductor material. | 11-08-2012 |
20120282730 | Ink composition, Chalcogenide Semiconductor Film, Photovoltaic Device and Methods for Forming the same - An ink composition includes a solvent system, a plurality of metal chalcogenide nanoparticles, at least one of metal ions and metal complex ions and a sodium source. The at least one of the metal ions and the metal complex ions are distributed on the surface of the metal chalcogenide nanoparticles and adapted to disperse the metal chalcogenide nanoparticles in the solvent system. The sodium source is dispersed in the solvent system and/or is included in at least one of the metal chalcogenide nanoparticle, the metal ions and the metal complex ions. The metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions are selected from a group consisted of group I, group II, group III, group IV elements of periodic table, and sodium and include all metal elements of a chalcogenide semiconductor material. | 11-08-2012 |
20140137942 | Ink composition, thin film solar cell and methods for forming the same - An ink composition, a thin film solar cell and method for forming the thin film solar cell are disclosed. The ink composition includes a solvent system, a source of Cu, a source of Zn, a source of Sn, a source of S and/or Se, and a source of group III element, wherein the ink composition is adapted in forming a I-II-IV-VI thin film solar cell to increase a fill factor of the I-II-IV-VI thin film solar cell. | 05-22-2014 |
20140335649 | Compound semiconductor precursor ink composition, method for forming a chalcogenide semiconductor film, and method for forming a photovoltaic device - A compound semiconductor precursor ink composition includes an ink composition for forming a chalcogenide semiconductor film and a peroxide compound mixed with the ink composition. A method for forming a chalcogenide semiconductor film and a method for forming a photovoltaic device each include using the compound semiconductor precursor ink composition containing peroxide compound to form a chalcogenide semiconductor film. | 11-13-2014 |