Yueh-Chin
Yueh-Chin Lin, Hsinchu TW
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20120025270 | ENHANCEMENT-MODE HIGH-ELECTRON-MOBILITY TRANSISTOR AND THE MANUFACTURING METHOD THEREOF - This invention discloses an enhancement-mode high-electron-mobility transistor and the manufacturing method thereof. The transistor comprises an epitaxial buffer layer on a substrate, a source and drain formed in the buffer layer, a PN-junction stack formed on the buffer layer and located between the source and drain, and a gate formed on the PN-junction stack, wherein the PN-junction stack is composed of alternating layers of a P-type semiconductor and an N-type semiconductor. | 02-02-2012 |
20120238064 | ENHANCEMENT-MODE HIGH-ELECTRON-MOBILITY TRANSISTOR AND THE MANUFACTURING METHOD THEREOF - This invention discloses an enhancement-mode high-electron-mobility transistor and the manufacturing method thereof. The transistor comprises an epitaxial buffer layer on a substrate, a source and drain formed in the buffer layer, a PN-junction stack formed on the buffer layer and located between the source and drain, and a gate formed on the PN-junction stack, wherein the PN-junction stack is composed of alternating layers of a P-type semiconductor and an N-type semiconductor. | 09-20-2012 |
Yueh-Chin Lin, Taipei County TW
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20120032279 | III-V METAL-OXIDE-SEMICONDUCTOR DEVICE - A barrier layer, hafnium oxide layer, between a III-V semiconductor layer and an lanthanum oxide layer is used to prevent interaction between the III-V semiconductor layer and the lanthanum oxide layer. Meanwhile, the high dielectric constant of the lanthanum oxide can be used to increase the capacitance of the semiconductor device. | 02-09-2012 |
Yueh-Chin Lin, Xinzhuang City TW
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20120080760 | Dielectric structure, transistor and manufacturing method thereof - The present invention discloses a dielectric structure, a transistor and a manufacturing method thereof with praseodymium oxide. The transistor with praseodymium oxide comprises at least a III-V substrate, a gate dielectric layer and a gate. The gate dielectric layer is disposed on the III-V substrate, and the gate is disposed on the gate dielectric layer, and the gate dielectric layer is praseodymium oxide (Pr | 04-05-2012 |
Yueh-Chin Lin, Hsinchu City TW
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20130140647 | III-V METAL-OXIDE-SEMICONDUCTOR DEVICE - A hafnium oxide layer, between a III-V semiconductor layer and a metal oxide layer is used to prevent interaction between the III-V semiconductor layer and the metal oxide layer. | 06-06-2013 |
20130153886 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a III-V semiconductor layer; an aluminum oxide layer formed on the III-V semiconductor layer; and a lanthanide oxide layer formed on the aluminum oxide layer. The method of manufacturing a semiconductor device includes: forming an aluminum oxide layer between a III-V semiconductor layer and a lanthanide oxide layer so as to prevent an inter-reaction of atoms between the III-V semiconductor layer and the lanthanide oxide layer. | 06-20-2013 |
20140151710 | Stacked Gate Structure, Metal-Oxide-Semiconductor Including the Same, and Method for Manufacturing the Stacked Gate Structure - The invention provides a stacked gate structure and metal-oxide-semiconductor including the same, and method for manufacturing the stacked gate structure. The stacked gate structure comprises a substrate, a semiconductor layer positioned on the substrate, a gate dielectric positioned on the semiconductor layer, and a gate electrode layer positioned on the gate dielectric, which the gate dielectric comprises a composite oxide layer composed of lanthanum oxide (La | 06-05-2014 |
Yueh-Chin Wu, Taipei TW
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20090138026 | Water dermabrasion and skincare device and method thereof - A water dermabrasion and skincare device includes a water jet, a positive-pressure air compressor, a negative-pressure air compressor, a three-way flow control valve, a skincare container, a cuticle softening container and a waste water tank. The water jet is formed with a water outlet joint and a water inlet joint, which is connected to a water outputting end of the three-way flow control valve, while the water outlet joint is connected to the negative-pressure air compressor. Two water inputting ends of the three-way flow control valve are connected to a pure water bottle. When the three-way flow control valve is switched to a dermabrasion position or a skincare position, the negative-pressure air compressor can be started to generate a vacuum suction, which will suck pure water from the pure water bottle to flow into the water jet for executing a dermabrasion operation or a skincare operation. | 05-28-2009 |