Patent application number | Description | Published |
20120329280 | METHOD FOR FORMING PHOTORESIST PATTERNS - A method for forming photoresist patterns includes providing a substrate, forming a bi-layered photoresist on the substrate, and performing a photolithography process to pattern the bi-layered photoresist. The bi-layered photoresist includes a first photoresist layer and a second photoresist layer positioned between the first photoresist layer and the substrate. The first photoresist layer has a first refraction index and the second photoresist layer has a second refraction index, and the second refraction index is larger than the first refraction index. | 12-27-2012 |
20130017474 | METHOD OF FORMING ASSIST FEATURE PATTERNSAANM Chiang; Yi-ChihAACI Tainan CityAACO TWAAGP Chiang; Yi-Chih Tainan City TWAANM Pai; Yuan-ChiAACI Tainan CityAACO TWAAGP Pai; Yuan-Chi Tainan City TWAANM Lee; Sho-ShenAACI New Taipei CityAACO TWAAGP Lee; Sho-Shen New Taipei City TWAANM Chen; Yi-TingAACI Kaohsiung CityAACO TWAAGP Chen; Yi-Ting Kaohsiung City TWAANM Yu; Tuan-YenAACI Tainan CityAACO TWAAGP Yu; Tuan-Yen Tainan City TW - A method of forming assist feature patterns includes providing an original layout pattern having at least a first region defined therein, the first region having a first light transmission rate larger than 0%; performing a search step to the original layout pattern to define at least a second region having a second light transmission rate equal to 0% in the original layout pattern; forming a plurality of assist features in the second region to increase the second light transmission rate to larger than 0%; and outputting the original layout pattern and the assist features to a reticle blank. | 01-17-2013 |
20130200535 | OVERLAY MARK FOR MULTIPLE PRE-LAYERS AND CURRENTLY LAYER - An overlay mark is described, including N (N≧2) groups of first x-directional linear patterns each defined from a different one of N pre-layers, N groups of second x-directional linear patterns of a current layer, N groups of first y-directional linear patterns each defined from a different one of the N pre-layers, and N groups of second y-directional linear patterns of the current layer. Each group of second x-directional linear patterns is disposed together with one group of first x-directional linear patterns, wherein the second linear patterns and the x-directional linear patterns are arranged alternately. Each group of second y-directional linear patterns is disposed together with one group of first y-directional linear patterns, wherein the second linear patterns and the first linear patterns are arranged alternately. | 08-08-2013 |
20130210237 | PHOTORESIST REMOVAL METHOD AND PATTERNING PROCESS UTILIZING THE SAME - A photoresist removal method is described. A substrate having thereon a positive photoresist layer to be removed is provided. The positive photoresist layer is UV-exposed without using a photomask. A development liquid is used to remove the UV-exposed positive photoresist layer. The substrate as provided may further have thereon a sacrificial masking layer under the positive photoresist layer. The sacrificial masking layer is removed after the UV-exposed positive photoresist layer is removed. | 08-15-2013 |
20140120476 | Method of forming a photoresist pattern - A method of forming a photoresist pattern, in which, a substrate is coated with a photoresist layer, an exposure process is performed on the photoresist layer to expose the photoresist layer, the photoresist layer is rinsed with a surfactant after the exposure process is performed, and the photoresist layer is post-exposure baked after the photoresist layer is rinsed with the surfactant. | 05-01-2014 |
20150064861 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device is provided. A substrate having a first gate and a second gate respectively formed in a first region and a second region is provided. An underlayer is formed on the substrate to cover the first gate in the first region and the second gate in the second region. A patterned mask with a predetermined thickness is formed on the underlayer in the first region. The underlayer corresponding to the second gate in the second region is removed by the patterned mask to expose the second gate, wherein the underlayer corresponding to the first gate in the first region is partially consumed to expose part of the first gate. | 03-05-2015 |
20150362905 | METHOD OF CORRECTING OVERLAY ERROR - A method of correcting an overlay error includes the following steps. First, an overlay mark disposed on a substrate is captured so as to generate overlay mark information. The overlay mark includes at least a pair of first mark patterns and at least a second mark pattern above the first mark patterns. Then, the overlay mark information is calculated to generate an offset value between two first mark patterns and to generate a shift value between the second mark pattern and one of the first mark patterns. Finally, the offset value is used to compensate the shift value so as to generate an amended shift value. | 12-17-2015 |
20150380312 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device is provided. The method includes the following steps. A substrate including a first transistor having a first conductivity type, a second transistor having a second conductivity type and a third transistor having the first conductivity type is formed. An inner-layer dielectric layer is formed on the substrate, and includes a first gate trench corresponding to the first transistor, a second gate trench corresponding to the second transistor and a third gate trench corresponding to the third transistor. A work function metal layer is formed on the inner-layer dielectric layer. An anti-reflective layer is coated on the work function metal layer. The anti-reflective layer on the second transistor and on the top portion of the third gate trench is removed to expose the work function metal layer. The exposed work function metal layer is removed. | 12-31-2015 |