Patent application number | Description | Published |
20090209050 | In-Situ Formed Capping Layer in MTJ Devices - A method of forming an integrated circuit includes forming magnetic tunnel junction (MTJ) layers; etching the MTJ layers to form a MTJ cell; and forming a dielectric capping layer on sidewalls of the MTJ cell, wherein the step of forming the dielectric capping layer is in-situ performed with the step of etching the MTJ layers. | 08-20-2009 |
20090303779 | Spin Torque Transfer MTJ Devices with High Thermal Stability and Low Write Currents - An integrated circuit structure includes a first fixed magnetic element; a second fixed magnetic element; and a composite free magnetic element between the first and the second fixed magnetic elements. The composite free magnetic element includes a first free layer and a second free layer. | 12-10-2009 |
20100193891 | In-Situ Formed Capping Layer in MTJ Devices - A method of forming an integrated circuit includes forming magnetic tunnel junction (MTJ) layers; etching the MTJ layers to form a MTJ cell; and forming a dielectric capping layer on sidewalls of the MTJ cell, wherein the step of forming the dielectric capping layer is in-situ performed with the step of etching the MTJ layers. | 08-05-2010 |
20100214825 | Programming MRAM Cells Using Probability Write - A method of writing a magneto-resistive random access memory (MRAM) cell includes providing a writing pulse to write a value to the MRAM cell; and verifying a status of the MRAM cell immediately after the step of providing the first writing pulse. In the event of a write failure, the value is rewritten into the MRAM cell. | 08-26-2010 |
20100254181 | Raising Programming Currents of Magnetic Tunnel Junctions Using Word Line Overdrive and High-k Metal Gate - A method of operating magneto-resistive random access memory (MRAM) cells includes providing an MRAM cell, which includes a magnetic tunneling junction (MTJ) device; and a selector comprising a source-drain path serially coupled to the MTJ device. The method further includes applying an overdrive voltage to a gate of the selector to turn on the selector. | 10-07-2010 |
20100265759 | Raising Programming Current of Magnetic Tunnel Junctions by Applying P-Sub Bias and Adjusting Threshold Voltage - A method of operating magneto-resistive random access memory (MRAM) cells includes providing an MRAM cell, which includes a magnetic tunneling junction (MTJ) device and a word line selector having a source-drain path serially coupled to the MTJ device. A negative substrate bias voltage is connected to a body of the word line selector to increase the drive current of the word line selector. The threshold voltage of the word line selector is also reduced. | 10-21-2010 |
20120127788 | MRAM Cells and Circuit for Programming the Same - A circuit includes magneto-resistive random access memory (MRAM) cell and a control circuit. The control circuit is electrically coupled to the MRAM cell, and includes a current source configured to provide a first writing pulse to write a value into the MRAM cell, and a read circuit configured to measure a status of the MRAM cell. The control circuit is further configured to verify whether a successful writing is achieved through the first writing pulse. | 05-24-2012 |
20120281464 | Raising Programming Currents of Magnetic Tunnel Junctions Using Word Line Overdrive and High-k Metal Gate - A method of operating magneto-resistive random access memory (MRAM) cells includes providing an MRAM cell, which includes a magnetic tunneling junction (MTJ) device; and a selector comprising a source-drain path serially coupled to the MTJ device. The method further includes applying an overdrive voltage to a gate of the selector to turn on the selector. | 11-08-2012 |