Young-Kuk
Young Kuk Kim, Gyeonggi-Do KR
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20110155204 | WIRE TYPE THIN FILM SOLAR CELL AND METHOD OF MANUFACTURING THE SAME - Disclosed herein is a wire type thin film solar cell, including: a metal wire which is made of any one selected from the group consisting of aluminum (Al), titanium (Ti), chromium (Cr), molybdenum (Mo) and tungsten (W); an N-type layer which is deposited on a circumference of the metal wire and conducts electrons generated from the metal wire; a P-type layer which is deposited on the N-type layer and emits electrons excited by solar light; and a transparent electrode layer which is deposited on the P-type layer. The wire type thin film solar cell can exhibit high photoelectric conversion efficiency compared to conventional flat-plate type thin film solar cells and can be easily manufactured into a highly-dense solar cell module. | 06-30-2011 |
Young Kuk Kim US
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20120254930 | METHOD AND VIDEO DEVICE FOR ACCESSING INFORMATION - A method and video device are disclosed for accessing information. In an embodiment of the present invention, part of data included in a title, being played, read from a storage medium or extracted from a broadcast signal is extracted and sent to a server over a network, and information corresponding to the part of the data (i.e., information related to the data and complete data of the data) is received from the server and played. Rather than the part of the data, information related to a position of the data, (e.g. a time point at which the playing of the data starts within the title or a radial position or a physical address at which the data is located in the storage medium) may be sent. The data may be data that forms audio, a frame-shaped video clip or a frame-shaped picture included in the title. | 10-04-2012 |
Young Kuk Ko, Suwon-Si KR
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20150114699 | INSULATION MATERIAL, PRINTED CIRCUIT BOARD USING THE SAME AND METHOD OF MANUFACTURING THE SAME - There are provided an insulation material, a printed circuit board using the same, and a method of manufacturing the same. The insulation material includes a via region in which a via is to be formed; and a reinforcement material, wherein the via region and the reinforcement material are formed to be spaced apart from each other. | 04-30-2015 |
Young Kuk Lee, Seoul KR
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20130161416 | Source Material Supplying Unit For Thin Film Depositing Apparatus - Disclosed is a source material supplying unit for a thin film depositing apparatus, arranged in a chamber for the thin film deposition apparatus and supplying an evaporation material to an injector for injecting the evaporation material, the source material supplying unit including: a container body which is internally formed with a storage space where the evaporation material is stored, and includes a discharging hole formed at one side thereof connected to the injector via a connection line; a transfer member which includes a piston body inserted in the storage space of the container body movably along a straight line, two or more seating members formed with a seating portion on an outer circumferential surface and arranged on an outside surface of the piston body, and at least two contact rings assembled to the seating portion of the seating member and closely contacting the inner circumferential surface of the storage space of the container body; and a pressing member which applies pressure to the transfer member so that the transfer member can move toward the discharging hole of the container body. | 06-27-2013 |
Young Kuk Lee, Daejeon KR
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20090275770 | NOVEL TIN AMINO-ALKOXIDE COMPLEXES AND PROCESS FOR PREPARING THEREOF - The present invention relates to novel tin amino-alkoxide complexes and a method for preparing the same, precisely novel tin amino-alkoxide complexes represented by formula 1 and useful as a precursor for tin and tin oxide thin films and a precursor for the production of nano-sized tin and tin oxide particles and a method for preparing the same. In formula 1, A is linear or branched (C2-C10) alkylene substituted or not substituted with halogen; R | 11-05-2009 |
Young Kuk Park, Seoul KR
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20090134507 | Adhesive on wire stacked semiconductor package - A semiconductor package and a method of producing the same has a substrate. A first semiconductor chip is coupled to a surface of the substrate. The first semiconductor chip has a first and second surfaces which are substantially flat in nature. An adhesive layer is coupled to the second surface of the first semiconductor chip. A second semiconductor chip having first and second surfaces which are substantially flat in nature is further provided. An insulator is coupled to the first surface of the second semiconductor chip for preventing shorting of wirebonds. The second semiconductor chip is coupled to the adhesive layer by the insulator coupled to the first surface thereof. | 05-28-2009 |
20110089564 | ADHESIVE ON WIRE STACKED SEMICONDUCTOR PACKAGE - A semiconductor package and a method of producing the same has a substrate. A first semiconductor chip is coupled to a surface of the substrate. The first semiconductor chip has a first and second surfaces which are substantially flat in nature. An adhesive layer is coupled to the second surface of the first semiconductor chip. A second semiconductor chip having first and second surfaces which are substantially flat in nature is further provided. An insulator is coupled to the first surface of the second semiconductor chip for preventing shorting of wirebonds. The second semiconductor chip is coupled to the adhesive layer by the insulator coupled to the first surface thereof. | 04-21-2011 |
Young-Kuk Kim, Masan-Si KR
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20120094841 | METHOD OF PREPARING MgB2 SUPERCONDUCTING WIRE AND THE MgB2 SUPERCONDUCTING WIRE PREPARED THEREBY - Disclosed herein is a method of preparing a MgB | 04-19-2012 |
Young-Kuk Kim, Busan KR
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20100095748 | NON-DESTRUCTIVE TEST APPARATUS - The present invention provides a non-destructive test apparatus which can be applied not only to a structure in dry conditions but also to a structure constructed under water or in a location to which it is difficult for a worker to gain access. The non-destructive test apparatus includes a support frame which is disposed adjacent to the target structure and has a vertical guide rail, and a vacuum box which moves upwards or downwards along the guide rail of the support frame. The vacuum box is attached to the target structure and creates a vacuum therein. The non-destructive test apparatus further includes a hoist which is provided on the upper end of the support frame to move the vacuum box upwards or downwards, a fastening unit which fastens the support frame and the vacuum box to the target structure, and a vacuum pump which creates a vacuum in the vacuum box. The non-destructive test apparatus further includes a defect detecting unit which measures a strength of vacuum in the vacuum box to determine whether the target structure is defective, and a control unit which controls the elements. | 04-22-2010 |
Young-Kuk Kim, Suwon-Si KR
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20100287496 | APPARATUS AND METHOD FOR MANAGING LAYOUT OF A WINDOW - An apparatus and method for managing the layout of a window is provided. The apparatus includes a display unit that displays the window on a screen; the screen is divided into a plurality of display areas; a pointer-position-checking unit that checks the coordinate position of a pointer moved by a user and determines the one display area corresponding to the position of the checked pointer; and a window-size-adjusting unit that moves the window to the one display area where the pointer is positioned and adjusts the size of the window in proportion to the size of the one display area. | 11-11-2010 |
Young-Kuk Kim, Seoul KR
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20100051893 | PLASMA TREATING METHODS OF FABRICATING PHASE CHANGE MEMORY DEVICES, AND MEMORY DEVICES SO FABRICATED - Phase change memory devices may be fabricated by forming a first electrode on a substrate and forming a chalcogenide material on the first electrode. The chalcogenide material is plasma treated sufficiently to induce a plasma species throughout the chalcogenide material. A second electrode is formed on the chalcogenide material. Related devices are also described. | 03-04-2010 |
20110051497 | METHOD OF MEASURING A RESISTANCE OF A RESISTIVE MEMORY DEVICE - A method of measuring a resistance of a memory cell in a resistive memory device can be provided by applying a data write pulse to a selected cell of the resistive memory device, applying a resistance read pulse to the selected cell after a delay time measured from a time of applying the data write pulse, measuring a drop voltage at the cell responsive to a pulse waveform output when applying the resistance read pulse to the selected cell, measuring a total current through the cell using the drop voltage and an internal resistance of a test device coupled to the cell, and determining a resistance of the resistive memory device using the total current and a voltage of the resistance read pulse. | 03-03-2011 |
20110121852 | PROBE CARD AND TEST APPARATUS INCLUDING THE SAME - A probe card and a test apparatus including the probe card for improving test reliability. The probe card may include a first input terminal Microelectromechanical Systems (MEMS) switch that connects a first input terminal and a first input probe pin, wherein the first input terminal MEMS switch comprises a control portion that receives an operation signal and a connection portion that connects the first input terminal and the first input probe pin. The probe card may further include a first output terminal MEMS switch that connects a first output terminal and a first output probe pin, wherein the first output terminal MEMS switch comprises a control portion that receives the operation signal and a connection portion that connects the first output terminal and the first output probe pin. | 05-26-2011 |
20110312126 | METHOD FABRICATING A PHASE-CHANGE SEMICONDUCTOR MEMORY DEVICE - A method of fabricating a phase-change semiconductor memory device includes a plasma treatment of an electrode connected to a phase-change material pattern after a conductive layer used to form the electrode has been planarized in the presence of an oxidizing agent. The plasma is formed from a plasma gas having a molecular weight of 17 or less. | 12-22-2011 |
20120088347 | Methods Of Manufacturing Non-Volatile Phase-Change Memory Devices - Methods of manufacturing non-volatile memory devices may include separating first phase-change material groups and second phase-change material groups, which have different sizes, from a target including phase-change materials and faulting a phase-change material layer on an object by using the first phase-change material groups and the second phase-change material groups. | 04-12-2012 |
20120147658 | SYSTEM OF MEASURING A RESISTANCE OF A RESISTIVE MEMORY DEVICE - A system for measuring a resistance of a memory cell in a resistive memory device can include a pulse generator configured to apply a data write pulse and a resistance read pulse to the resistive memory device with a delay time. A connecting member can be connected between the pulse generator and the resistive memory device. A test measurement device can be connected to the resistive memory device outputting a pulse waveform and a data-processing member can be configured to determine the resistance of the resistive memory device using the pulse waveform and an internal resistance of the test measurement device. | 06-14-2012 |
20130126510 | NON-VOLATILE MEMORY DEVICES HAVING DUAL HEATER CONFIGURATIONS AND METHODS OF FABRICATING THE SAME - A non-volatile memory device includes a data storage structure coupled between first and second conductive lines of the memory device. The data storage structure includes a conductive lower heater element, a data storage pattern, and a conductive upper heater element sequentially stacked. At least one sidewall surface of the data storage pattern is coplanar with a sidewall surface of the upper heater element thereabove and a sidewall surface of the lower heater element therebelow. Related fabrication methods are also discussed. | 05-23-2013 |
20140098504 | ELECTROPLATING METHOD FOR PRINTED CIRCUIT BOARD - Disclosed is an electroplating method for printed circuit board. The method includes: providing a printed circuit board including a circuit pattern, a pad part on which components are mounted, a terminal part for electrical connection to an external device, and a connector part; masking the portion of the printed circuit board other than the terminal part and the connector part; dipping the printed circuit board in a nickel-tungsten alloy plating solution including a water-soluble nickel compound, a water-soluble tungsten compound, a complexing agent, and a ductility improver; forming a nickel-tungsten alloy plated layer on each of the exposed portions of the terminal part and the connector part by direct-current (DC) electroplating; and forming a gold-containing plated layer on the nickel-tungsten alloy plated layer by DC electroplating. | 04-10-2014 |
20140131655 | SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME - Provided are semiconductor memory devices and the methods of fabricating the same. The method may include forming a plurality of diode patterns in each of a plurality of first trenches, each of the plurality of first trenches including at least two active regions, the plurality of diode patterns occupying a plurality of spaces, treating the plurality of diode patterns to form a plurality of semiconductor patterns in each of the plurality of spaces, removing portions of the plurality of semiconductor patterns to form a recess in each of the plurality of spaces, treating the of the plurality of semiconductor patterns to form a plurality of diodes in each of the plurality of spaces, forming a bottom electrode on each of the plurality of diodes, forming a plurality of memory elements on each of the bottom electrodes, and forming a plurality of upper interconnection lines on the plurality of memory elements. | 05-15-2014 |
Young-Kuk Kwon, Suwon-Si KR
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20090184639 | Plasma display panel - A plasma display panel (PDP) including: a pair of substrates facing each other; a plurality of discharge electrodes disposed on inner surfaces of the substrates; a dielectric layer covering the discharge electrodes; and barrier ribs disposed between the substrates to form discharge spaces therebetween, wherein the substrates are partitioned into a display area displaying an image and a non-display area extended from the display area, and the barrier ribs include a plurality of first barrier ribs disposed in the display area and a plurality of second barrier ribs disposed in the non-display area, and the thickness of the dielectric layer in the non-display area in which the second barrier ribs are disposed is smaller than the thickness of the dielectric layer in the display area in which the first barrier ribs are disposed. | 07-23-2009 |
20090190198 | Film filter and flat panel display having the same - The present embodiments relate to a film filter and a flat panel display having the same capable of improving visibility and bright room contrast ratio. The film filter of the present embodiments comprises: first and second electrode layers disposed to be opposed to each other; a support layer having a hole and disposed between the first electrode layer and the second electrode layer; and a blind member disposed on the hole and of which transmittance is changed depending on electric field applied from the external. | 07-30-2009 |
Young-Kuk Oh, Seoul KR
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20080201837 | Bidet For Toliet Bowl - A bidet device for toilet bowls is mounted on a toilet bowl for washing an anus and the inner part of an intestine or a vagina, and includes a main body ( | 08-28-2008 |
20090025133 | BIDET HAVING VIBRATOR - A beauty-care bidet includes an introduction hose for introducing washing water, a water purifier connected to the introduction hose for purifying the washing water introduced through the introduction hose, a head separably coupled to the water purifier and having an open tip end portion communicating with the water purifier, a control valve for cutting off the washing water supplied to the open tip end portion of the head or for regulating a pressure of the washing water, a tip end operating unit detachably attached to the open tip end portion of the head, and a vibrator mounted to the head in such a way that the vibrator can be operatively connected to the tip end operating unit. The tip end operating unit is a bidet-washing insertion device that can be inserted into an intestine or a vagina of a user. | 01-29-2009 |
Young-Kuk Park, Yongin-Si KR
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20090054013 | Transmitter and Transmitting Method Thereof In Wireless Communication System - A transmitter and a transmitting method of a wireless communication system are provided. The transmitter transmits RF signals using an outphasing scheme of converting one analog IF NC-EMS into two analog C-EMSs. In the transmitter, a baseband processor generates a baseband digital modulated I-signal and a baseband digital modulated Q-signal. A signal converter converts the baseband digital modulated I-signal and the baseband digital modulated Q-signal into a baseband analog modulated I-signal and a baseband analog modulated Q-signal. An IF processor up-converts the baseband analog modulated I-signal and the baseband analog modulated Q-signal to generate one analog IF NC-EMS. A signal component separator separates the analog IF NC-EMS into a first analog IF C-EMS and a second analog IF C-EMS. An RF processor up-converts the first analog IF C-EMS and the second analog IF C-EMS to generate a first analog RF C-EMS and a second analog RF C-EMS. A power amplifier amplifies powers of the first and second analog RF C-EMSs. An RF combiner combines the first and second analog RF C-EMSs having the amplified powers to generate one combined analog RF C-EMS. | 02-26-2009 |
20090054014 | Transmitter and Transmitting Method Thereof In Wireless Communication System - A transmitter and a transmitting method of a wireless communication system are provided. The transmitter transmits RF signals using an outphasing scheme of converting one analog IF NC-EMS into two analog C-EMSs. In the transmitter, a baseband processor generates a baseband digital modulated I-signal and a baseband digital modulated Q-signal. An IF processor up-converts the baseband digital modulated I-signal and the baseband digital modulated Q-signal to generate one digital IF NC-EMS. A signal component separator separates the digital IF NC-EMS into a first digital IF C-EMS and a second digital IF C-EMS. An RF processor up-converts the first digital IF C-EMS and the second digital IF C-EMS to generate a first analog RF C-EMS and a second analog RF C-EMS. A power amplifier amplifies powers of the first and second analog RF C-EMSs. An RF combiner combines the first and second analog RF C-EMSs having the amplified powers to generate one combined analog RF C-EMS. | 02-26-2009 |