Patent application number | Description | Published |
20090256604 | REGISTER CONTROLLED DELAY LOCKED LOOP CIRCUIT - A register controlled DLL circuit occupies a relatively small area in a semiconductor device by reducing the number of flip-flops for generating timing pulses that are used to control a DLL operation and sequentially toggled. The registered controlled DLL circuit for generating a DLL clock by delaying internal clocks includes a timing pre-pulse generating unit configured to generate a plurality of timing pre-pulses activated sequentially in response to a source clock, the plurality of pre-pulses being repeated two or more times in each delay shifting update period, a mask signal generating unit configured to generating a mask signal having a logic level varied according to toggling of a predetermined one of the timing pre-pulses, and a timing pulse outputting unit configured to output the plurality of timing pre-pulses as a plurality of timing pulses in response to the mask signal. | 10-15-2009 |
20100073057 | DUTY CYCLE CORRECTOR AND CLOCK GENERATOR HAVING THE SAME - A duty cycle corrector includes a delay unit configured to adjust an input clock and an inverted input clock with a delay value controlled in response to one or more control signals and to generate a positive clock and a negative clock, and a duty detector configured to receive the positive clock and the negative clock, to detect duty ratios of the positive clock and the negative clock and to generate the one or more control signals. | 03-25-2010 |
20100118580 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes first positive and negative data lines driven with voltage levels contrary to each other in response to first data and second positive and negative data lines driven with voltage levels contrary to each other in response to second data, wherein one of the second positive and negative data lines is disposed between the first positive and negative data lines. | 05-13-2010 |
20100134164 | DELAY LOCKED LOOP CIRCUIT - A delay locked loop circuit includes a delay locking block configured to delay an input clock and output the delayed input clock as an internal clock to compensate a skew of an external clock and the internal clock, a pulse generating block configured to sequentially output a plurality of pulse signals that control an operation of the delay locking block and enable one of the plurality of pulse signals in response to a detection signal, wherein the plurality of pulse signals is shifted by being synchronized with the input clock, and a pulse detecting block configured to output the detection signal in case all of the plurality of pulse signals are disabled. | 06-03-2010 |
20100164566 | DELAY LOCKED LOOP CIRCUIT AND OPERATIONAL METHOD THEREOF - A delay locked loop circuit includes a clock buffering block to generate first and second internal clocks corresponding to first and second edges of a source clock in response to a clock buffering control signal, respectively, wherein generation of the second internal clock is controlled by a duty correcting operation terminating signal and a delay locking signal, a delay locking block to compare phases of the first and second internal clocks with those of first and second feedback clocks, respectively, to enable the delay locking signal according to a delay locking and delay the first and second internal clocks as many as times corresponding to the comparison results, respectively, thereby outputting first and second delay locking clocks, a duty correcting block to mix phases of the first and second delay locking clocks, and a first signal generating block to generate the duty correcting operation terminating signal. | 07-01-2010 |
20100165750 | DATA INPUT DEVICE OF SEMICONDUCTOR MEMORY APPARTUS AND CONTROL METHOD THEREOF - A data input device of a semiconductor memory apparatus includes input means configured to input data; precharge means configured to supply a precharge voltage for converting inputted data to a differential signal; enable means configured to enable the input means and the precharge means to operate; and control means configured to control a current amount of the enable means in a standby mode. | 07-01-2010 |
20100283520 | DELAY LOCKED LOOP - A semiconductor memory device includes a delay locked loop for achieving a delay locked state by correcting a phase difference between a reference clock and an internal delayed clock and for indicating the state that a larger delay amount than a maximum delay amount of a delay line is required, or a smaller delay amount than a minimum delay amount of delay line is required. A control unit resets the delay locked loop according to the state of the delay line. | 11-11-2010 |
20110291720 | DELAY LOCKED LOOP CIRCUIT AND SEMICONDUCTOR DEVICE HAVING THE SAME - A semiconductor device includes a delay line configured to delay a source clock by a delay equal to a first number of delay units in response to a delay control code and to generate a delayed source clock; a delay amount sensing unit configured to sense whether the delay amount of the delay line reaches a delay amount limit; a clock cycle measuring unit configured to measure the cycle of the source clock by counting a sampling clock in response to an output signal of the delay amount sensing unit, wherein a cycle of the sampling clock is equal to a second number of delay units; and a delay amount controlling unit configured to change the delay amount of the delay line in response to the measured cycle of the source clock as determined from an output signal of the clock cycle measuring unit. | 12-01-2011 |
20120007250 | SEMICONDUCTOR INTEGRATED CIRCUIT - A semiconductor integrated circuit includes a first semiconductor chip including a first output circuit which is enabled in a first operation mode and outputs a first output signal and a second output circuit which is enabled in a second operation mode and outputs a second output signal; a second semiconductor chip including a first input circuit which is enabled in the first operation mode and receives the first output signal and a second input circuit which is enabled in the second operation mode and receives the second output signal; and a common through chip via arranged to vertically penetrate through the semiconductor chip, be coupled with the first and second output circuits in one end and coupled with the first and second input circuits in the other end, and interface transfer of the first and second output signals which are enabled in different operation modes, including the first and second operation modes. | 01-12-2012 |
20120218838 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a read circuit configured to sequentially output a plurality of compressed data corresponding to all banks which are to be tested in response to a plurality of bank addresses and a read enable signal during a test mode and a pad configured to transfer the compressed data which are sequentially outputted from the read circuit to an outside of the semiconductor memory device. | 08-30-2012 |
20120274373 | SEMICONDUCTOR DEVICE AND DELAY LOCKED LOOP CIRCUIT THEREOF - A semiconductor device includes a first phase detector for detecting a phase of a second clock by comparing the phase of the second clock with the phase of the first clock, a second phase detector for detecting a phase of a clock obtained by delaying the second clock by a set delay amount, a third phase detector for detecting the phase of the second clock by delaying the first clock by the set delay amount, and a phase difference detection signal generator for setting a logic level of a phase difference detection signal corresponding to a phase difference between the first and second clocks detecting that the phase of the first or second clock is changed, and change the logic level of the phase difference detection signal. | 11-01-2012 |
20140098620 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a read circuit configured to sequentially output a plurality of compressed data corresponding to all banks which are to be tested in response to a plurality of bank addresses and a read enable signal during a test mode and a pad configured to transfer the compressed data which are sequentially outputted from the read circuit to an outside of the semiconductor memory device. | 04-10-2014 |
20150023119 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SYSTEM HAVING THE SAME - A semiconductor device includes a column command generation unit suitable for generating a column command delayed by a first delay time from a source command, in response to a first control signal and the source command, a bank address generation unit suitable for generating a bank address delayed by the first delay time from a bank source address, in response to the first control signal and the bank source address, a precharge command generation unit suitable for generating a precharge command delayed by a second delay time from the column command, in response to a second control signal and the column command, and a precharge bank address generation unit suitable for generating a precharge bank address delayed by the second delay time from the bank address, in response to the second control signal and the bank address. | 01-22-2015 |
20150043289 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a pad configured to receive a first write data from outside of the semiconductor memory device, and a write circuit configured to generate a plurality of second write data which are to be written in memory cells of all banks to be tested in response to a test mode signal, data strobe signals, a write enable signal, and the first write data transferred through the pad. | 02-12-2015 |
20150048870 | SEMICONDUCTOR DEVICE, SEMICONDUCTOR SYSTEM INCLUDING THE SAME, AND METHOD FOR OPERATING THE SAME - A semiconductor device may include first to fourth output lines, an input signal latch unit suitable for latching first to fourth input signals that are sequentially inputted in response to first to fourth clocks having sequential phases, respectively, a valid signal latch unit suitable for latching a valid signal in response to one clock among the first to fourth clocks, where the valid signal corresponds to one input signal among the first to fourth input signals and represents whether the corresponding input signal is valid or not, and a signal transfer unit suitable for transferring the latched input signals, which are obtained by latching the input signals in response to the first to fourth clocks, to the first to fourth output lines based on a correspondence relationship that is decided based on a valid signal latch result of the valid signal latch unit. | 02-19-2015 |
Patent application number | Description | Published |
20080212383 | Circuit and method for parallel test of memory device - A test circuit in a memory device includes a first compression unit configured to compress data of a plurality of cells to transmit first compressed data to a plurality of input/output lines, and a second compression unit configured to compress the first compressed data on the plurality of input/output line to output second compressed data to at least one output pin, wherein the second compression unit operates in a low compressing mode and a high compressing mode in response to a data compression selecting signal. | 09-04-2008 |
20080239846 | Delay locked loop and semiconductor memory device with the same - A semiconductor memory device is capable of controlling a delay locked loop appropriately based on operation modes, particularly in a fast power-down mode to reduce an amount of current maximumly. The semiconductor memory device includes a delay-locked clock signal generating unit, a mode signal generating unit, and a delay locking control unit. The delay-locked clock signal generating unit performs a delay locking operation on a clock signal, thereby generating a delay-locked clock signal. The mode signal generating unit enables a fast precharge power-down mode signal in a fast precharge power-down mode. The delay locking control unit controls the delay-locked clock signal generating unit to be activated in a predetermined cycle in response to the fast precharge power-down mode signal. | 10-02-2008 |
20090116316 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE - Semiconductor device and semiconductor memory device include a plurality of internal circuits configured to perform test operations in response to their respective test mode signals and a plurality of test-off units configured to control the test operations of the internal circuits to be disabled in response to a test-off signal. | 05-07-2009 |
20100054060 | DELAY LOCKED LOOP AND SEMICONDUCTOR MEMORY DEVICE WITH THE SAME - A semiconductor memory device is capable of controlling a delay locked loop appropriately based on operation modes, particularly in a fast power-down mode to reduce an amount of current maximumly. The semiconductor memory device includes a delay-locked clock signal generating unit, a mode signal generating unit, and a delay locking control unit. The delay-locked clock signal generating unit performs a delay locking operation on a clock signal, thereby generating a delay- locked clock signal. The mode signal generating unit enables a fast precharge power-down mode signal in a fast precharge power-down mode. The delay locking control unit controls the delay-locked clock signal generating unit to be activated in a predetermined cycle in response to the fast precharge power-down mode signal. | 03-04-2010 |
20120001175 | SEMICONDUCTOR DEVICE CAPABLE OF SUPPRESSING A COUPLING EFFECT OF A TEST-DISABLE TRANSMISSION LINE - Semiconductor device and semiconductor memory device include a plurality of internal circuits configured to perform test operations in response to their respective test mode signals and a plurality of test-mode control units configured to control the test operations of the internal circuits to be disabled in response to a test-off signal. | 01-05-2012 |