Patent application number | Description | Published |
20080205615 | Method for Providing Caller Identification Service and System of Enabling the Method - A caller identification service providing system including: a biz lettering database recording identification information with respect to at least one originating terminal belonging to a subscriber and predetermined multimedia data registered by the subscriber; and a biz lettering server receiving a call request signal from the at least one originating terminal, reading the multimedia data corresponding to the identification information of the at least one originating terminal from the biz lettering database, and transmitting the call request signal including the read multimedia data to a terminating terminal. | 08-28-2008 |
20090067721 | IMAGE PROCESSING APPARATUS AND METHOD AND A COMPUTER READABLE MEDIUM HAVING COMPUTER EXECUTABLE INSTRUCTIONS STORED THEREON FOR PERFORMING THE METHOD - Image processing apparatus and methods perform effective labeling of objects in an image while advantageously requiring only a small memory. The apparatus and methods practicably and effectively implement various applications, in particular, a detection technique for determination of a detection target. The apparatus comprises a detection unit for detecting values of pixels adjacent to a target pixel within a transformation matrix area of a binary image. The apparatus also includes a labeling unit for assigning a label value to the target pixel. The assigned label value is either a new value or the value existing in the pixels adjacent the target pixel, depending on the value of the adjacent pixels' label. | 03-12-2009 |
20110049458 | Non-volatile memory device including phase-change material - A non-volatile memory device including a phase-change material, which has a low operating voltage and low power consumption, includes a lower electrode; a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, wherein the phase-change material layer includes a phase-change material having a composition represented by Sn | 03-03-2011 |
20110049459 | NON-VOLATILE MEMORY DEVICE INCLUDING PHASE-CHANGE MATERIAL - A non-volatile memory device includes a lower electrode, a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, and an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer. The phase-change material layer includes a phase-change material including a composition represented by the formula (I) | 03-03-2011 |
20120018824 | MAGNETIC MEMORY LAYER AND MAGNETIC MEMORY DEVICE INCLUDING THE SAME - A magnetic memory layer and a magnetic memory device including the same, the magnetic memory layer including a first seed layer; a second seed layer on the first seed layer, the second seed layer grown according to a <002> crystal direction with respect to a surface of the first seed layer; and a main magnetic layer on the second seed layer, the main magnetic layer grown according to the <002> crystal direction with respect to a surface of the second seed layer. | 01-26-2012 |
20120195516 | IMAGE PROCESSING APPARATUS AND METHOD FOR PERFORMING A DISCRETE COSINE TRANSFORM - An image processing apparatus and method providing a high speed pipeline structure having a low level of complexity is described. The image processing apparatus includes a memory configured to store a plurality of data in a plurality of memory locations, where an ordinally specified data is in a corresponding ordinal memory location. | 08-02-2012 |
20120292724 | MAGNETIC DEVICE - A magnetic tunnel junction element is provided. The magnetic tunnel junction element has first magnetic layer and second magnetic layer formed adjacent, e.g., on lower and upper portions of an insulating layer, respectively and each having a perpendicular magnetic anisotropy, a magnetic field adjustment layer formed on the second magnetic layer and having a perpendicular magnetic anisotropy, and a bather layer formed between the magnetic field adjustment layer and the second magnetic layer. The second magnetic layer and the magnetic field adjustment layer are magnetically decoupled from each other. | 11-22-2012 |
20130148890 | DIGITAL IMAGE PROCESSING APPARATUS AND METHOD - A digital image processing apparatus and method are provided. The digital image processing apparatus includes: a Y component processing unit receiving a Y component and performing edge enhancement processing and first noise reduction processing on the Y component by using a memory allocated to the Y component; and a CbCr processing unit receiving a Cb component and a Cr component, and performing false color suppression processing and second noise reduction processing on the Cb component and the Cr component by using a memory allocated to the Cb component and the Cr component, where the Y component, the Cb component and the Cr component are variables of the YCbCr color space. | 06-13-2013 |
20140256062 | METHOD FOR FABRICATING NONVOLATILE MEMORY DEVICE - A method for fabricating a nonvolatile memory device is provided. The method includes forming a transistor including an impurity region formed in a substrate, forming a first interlayer insulation layer covering the transistor, the first interlayer insulation layer including a protrusion overlapping the impurity region, and forming an information storage unit on the protrusion, the information storage unit exposing side surfaces of the protrusion using point cusp magnetron-physical vapor deposition (PCM-PVD) and electrically connected to the impurity region. | 09-11-2014 |
20140264680 | Non-Volatile Memory Devices and Methods of Fabricating the Same - A nonvolatile memory device is provided. The nonvolatile memory device comprises a plurality of impurity regions formed in a substrate, a first contact electrically connected to at least one of the impurity regions, a second contact electrically connected to at least one of the impurity regions, a first information storage portion formed at a first height from the substrate and electrically connected to the first contact, and a second information storage portion formed at a second height, which is different from the first height, from the substrate and electrically connected to the second contact. | 09-18-2014 |
20140308759 | METHOD OF FORMING SEMICONDUCTOR DEVICE HAVING MAGNETIC TUNNEL JUNCTION AND RELATED DEVICE - A method of forming a semiconductor device includes forming a perpendicular magnetized magnetic device, annealing the perpendicular magnetized magnetic device, and applying a magnetic field to the perpendicular magnetized magnetic device. The semiconductor device may be a magnetoresistance data storage device. The magnetic field is applied in a direction that is substantially perpendicular to a substrate coupled to the perpendicular magnetized magnetic device. | 10-16-2014 |
20140327095 | MAGNETIC DEVICE - A magnetic device can include a tunnel bather and a hybrid magnetization layer disposed adjacent the tunnel barrier. The hybrid magnetization layer can include a first perpendicular magnetic anisotropy (PMA) layer, a second PMA layer, and an amorphous blocking layer disposed between the first and second PMA layers. The first PMA layer can include a multi-layer film in which a first layer formed of Co and a second layer formed of Pt or Pd are alternately stacked. A first dopant formed of an element different from those of the first and second layers can also be included in the first PMA layer. The second PMA layer can be disposed between the first PMA layer and the tunnel barrier, and can include at least one element selected from a group consisting of Co, Fe, and Ni. | 11-06-2014 |