Patent application number | Description | Published |
20120001152 | SEMICONDUCTOR LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF - A semiconductor light emitting diode (LED) and a manufacturing method thereof are disclosed. The method for manufacturing a semiconductor light emitting diode (LED) includes: forming a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a substrate with prominences and depressions; removing the substrate from the light emission structure to expose a first concavoconvex portion corresponding to the prominences and depressions; forming a protection layer on the first concavoconvex portion; removing a portion of the protection layer to expose a convex portion of the first concavoconvex portion; and forming a second concavoconvex portion on the convex portion of the first concavoconvex portion. The semiconductor light emitting diode (LED) includes: a light emission structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a first concavoconvex portion formed on the light emission structure and having a second concavoconvex portion at a convex portion thereof; and a protection layer filling up a concave portion of the first concavoconvex portion. | 01-05-2012 |
20120104449 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes: a first conductive semiconductor layer including first and second areas; an active layer disposed on the second area; a second conductive semiconductor layer disposed on the active layer; first and second electrode branches disposed on the first and second conductive semiconductor layers, respectively; a first electrode pad electrically connected to the first electrode branch and disposed on the first electrode branch; and a second electrode pad electrically connected to the second electrode branch and disposed on the second electrode branch. | 05-03-2012 |
20120107987 | METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a method of manufacturing a semiconductor light emitting device, the method including: forming a light emitting structure by sequentially growing an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate; forming a transparent electrode on the p-type nitride semiconductor layer through a sputtering process; and forming a nitrogen gas atmosphere in an interior of a reaction chamber in which the sputtering process is performed, prior to or during the sputtering process. | 05-03-2012 |
20130020554 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS - There is provided a semiconductor light emitting device and a light emitting apparatus. The semiconductor light emitting device includes a light emitting diode (LED) part disposed on one region of a light transmissive substrate and including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; and a Zener diode part disposed on the other region of the light transmissive substrate and including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. | 01-24-2013 |
20130168718 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND LED MODULE - A semiconductor light emitting device includes a semiconductor laminate including first and second conductivity-type semiconductor layers and an active layer formed therebetween, and divided into first and second regions. At least one contact hole is formed on the first region and connected to a portion of the first conductivity-type semiconductor layer through the active layer. A first electrode is formed to be connected to the first conductivity-type semiconductor layer of the first region and connected to the second conductivity-type semiconductor layer of the second region through the at least one contact hole. A second electrode is formed and connected to the second conductivity-type semiconductor layer of the first region. First and second electrode pads and a support substrate are formed. | 07-04-2013 |
20130234170 | SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING MULTI-CELL ARRAY - A semiconductor light emitting device (LED) includes a first light emitting cell having a first plurality of electrodes. A second light emitting cell includes a second plurality of electrodes. The first and second light emitting cells are disposed on the substrate and are physically separated from each other. A first interconnection unit electrically connects the first plurality of electrodes to the second plurality of the electrodes. | 09-12-2013 |
20140061713 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes: a first conductive semiconductor layer including first and second areas; an active layer disposed on the second area; a second conductive semiconductor layer disposed on the active layer; first and second electrode branches disposed on the first and second conductive semiconductor layers, respectively; a first electrode pad electrically connected to the first electrode branch and disposed on the first electrode branch; and a second electrode pad electrically connected to the second electrode branch and disposed on the second electrode branch. | 03-06-2014 |
20140197026 | SPUTTERING APPARATUS AND METHOD FOR FORMING A TRANSMISSIVE CONDUCTIVE LAYER OF A LIGHT EMITTING DEVICE - There is provided a method for manufacturing a nitride semiconductor light emitting device, including: forming a light emitting structure including first and second conductive nitride semiconductor layers on a substrate and an active layer formed therebetween; forming the first conductive nitride semiconductor layer, the active layer, and the second conductive nitride semiconductor layer in sequence; forming a first electrode connected to the first conductive nitride semiconductor layer; forming a photo-resist layer on the second conductive nitride semiconductor layer so as to expose a portion of the semiconductor layer; and removing the photo-resist layer after a reflective metal layer and a barrier metal layer serving as a second electrode structure are successively formed on the second conductive nitride semiconductor layer exposed by the photo-resist layer. | 07-17-2014 |