Patent application number | Description | Published |
20090155904 | METHOD OF INHIBITING EXPRESSION OF TARGET MRNA USING SIRNA CONSISTING OF NUCLEOTIDE SEQUENCE COMPLEMENTARY TO SAID TARGET MRNA - A inhibition method of target mRNA expression includes: (a) obtaining binding energy of a double combination section on a dsRNA sequence of all combination comprising complementary nucleotides to a random target mRNA; (b) dividing the binding energy into four sections on the dsRNA sequence of each combination to obtain a difference of the mean binding energy between each section and convert into a score of a relative combination energy pattern; (c) selecting siRNA whose inhibition efficiency to target mRNA is expected to be high by applying the converted score to the dsRNA sequence with other factors that affect the efficiency of siRNA; and (d) inhibiting target mRNA expression using the selected siRNA. As a result, a researcher or an experimenter can analyze patterns of a relative binding energy on base sequences of unknown siRNA without actual experiments to determine whether the siRNA is effective or ineffective rapidly, thereby design and production efficiency of siRNA can be maximized and target mRNA can be effectively inhibited with efficient siRNA to the target mRNA. | 06-18-2009 |
20090325291 | METHOD OF PREPARING siRNAs FOR SELECTIVE INHIBITION OF TARGET mRNA ISOTYPES - A method of preparing siRNAs for selective inhibition of target mRNA isotypes comprises: dividing target mRNA isotypes intended to inhibit the expression thereof and non-target mRNA isotypes from the mRNA isotypes of a gene; allotting a common location information region (A) of exons on genome DNA corresponding to the target mRNA isotypes; allotting a location information region (B) present specifically in exons of genome DNA corresponding to target mRNAs by excluding the location information region of exons on genome DNA corresponding to non-target mRNA from the location information region (A); determining base sequences in the target mRNAs corresponding to the location information region (B); and obtaining siRNA sequences for inhibiting the determined base sequences specifically. The method of the present invention can be used to prepare siRNAs for selective inhibition of specific target mRNA isotypes in a gene having several isotypes by alternative splicing, and enables siRNA design for all the genes in genome, making good tool for functional genomics study. | 12-31-2009 |
20110050890 | METHOD AND SYSTEM FOR MEASURING STRUCTURAL VIBRATION USING CURVE FITTING FROM VIDEO SIGNAL - A method and system for measuring structural vibration using curve fitting from a video signal, which can reduce an error in vibration measurement displacement, is provided. A method for measuring structural vibration using curve fitting from a video signal, the method includes the steps of: obtaining a video signal of the object; converting the video signal of the object into a gray video signal; adjusting the brightness of the converted video signal; separating an area to be measured from the brightness-adjusted video signal; selecting an edge area of the object from a video signal of the separated area; removing noises from the edge regions; and performing curve fitting with respect to the noise-removed video signal of the edge area. Accordingly, a displacement error is reduced, so that vibration can be more exactly measured. | 03-03-2011 |
20110185790 | Leakage Detection Method and System Using Camera Image - Provided is a leakage detection system and method using an image that may detect a leakage of high temperature high pressure steam using an image. The leakage detection method may include: obtaining an image of a target where a leakage of high temperature high pressure steam occurs; detecting, in the obtained image, an edge image before the leakage occurs and an edge image after the leakage occurs; detecting only a leakage edge image by comparing the edge image before the leakage occurs and the edge image after the leakage occurs; removing noise from the leakage edge image; and displaying the leakage edge image in which the noise is removed. | 08-04-2011 |
20110314916 | METHOD AND DEVICE FOR LOW FREQUENCY VIBRATION EXCITATION USING ULTRASONIC WAVE - Provided is a method and device for low frequency vibration excitation, which may generate a low frequency using a plurality of ultrasonic generators for high frequency. The method generates ultrasonic waves using a plurality of ultrasonic generators attached to a target structure to induce a beat phenomenon, and extract a frequency lower than a frequency of each of the plurality of the ultrasonic generators to measure a property of the target structure, and thereby may be freely applied to a target structure, regardless of a shape of the target structure such as a plate, a curved pipe, and the like, using a relatively small-sized ultrasonic sensor for high frequency, and may excite a specific frequency of an acceleration range, so that the ultrasonic excitation method may be applicable in a relatively poor Signal-to-Noise Ratio (SNR) range. | 12-29-2011 |
20110314917 | METHOD AND DEVICE FOR LOW FREQUENCY VIBRATION EXCITATION USING ULTRASONIC WAVE - Provided is a method and device for low frequency vibration excitation, which may generate a low frequency using a plurality of ultrasonic generators for high frequency. The method generates ultrasonic waves using a plurality of ultrasonic generators attached to a target structure to induce a beat phenomenon, and extract a frequency lower than a frequency of each of the plurality of the ultrasonic generators to measure a property of the target structure, and thereby may be freely applied to a target structure, regardless of a shape of the target structure such as a plate, a curved pipe, and the like, using a relatively small-sized ultrasonic sensor for high frequency, and may excite a specific frequency of an acceleration range, so that the ultrasonic excitation method may be applicable in a relatively poor Signal-to-Noise Ratio (SNR) range. | 12-29-2011 |
Patent application number | Description | Published |
20090115314 | BORON NITRIDE NANOTUBE PASTE COMPOSITION, ELECTRON EMISSION SOURCE INCLUDING THE SAME, ELECTRON EMISSION DEVICE INCLUDING THE ELECTRON EMISSION SOURCE, AND BACKLIGHT UNIT AND ELECTRON EMISSION DISPLAY DEVICE INCLUDING THE ELECTRON EMISSION DEVICE - Boron nitride nanotube paste compositions, electron emission sources including the same, electron emission devices including the same and backlight units and electron emission display devices including the same are provided. A boron nitride nanotube paste composition includes about 100 parts by weight boron nitride nanotubes, from about 500 to about 2000 parts by weight glass frit, from about 1000 to about 2000 parts by weight filler, from about 2000 to about 4000 parts by weight organic solvent, and from about 4000 to about 6000 parts by weight polymer binder. Electron emission devices including the boron nitride nanotube electron emission sources have longer lifespan and improved uniformity among pixels. | 05-07-2009 |
20090134766 | ELECTRON EMISSION SOURCE, ELECTRON EMISSION DEVICE, ELECTRON EMISSION TYPE BACKLIGHT UNIT AND ELECTRON EMISSION DISPLAY DEVICE - An electron emission source electrically coupled to a cathode, the electron emission source including: an insulating material at or near the center of the electron emission source; and an electron emission material around the insulating material. | 05-28-2009 |
20090134768 | ELECTRON EMISSION DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRON EMISSION DISPLAY INCLUDING THE SAME - An electron emission device includes: a substrate; a cathode on the substrate; one or more electron emission regions electrically connected with the cathode; an insulation layer between the cathode and a gate electrode formed on the insulation layer; and a resistance layer electrically connected to the cathode and the one or more electron emission regions. Here, the resistance layer includes a boron nitride-based material. | 05-28-2009 |
20090206722 | ELECTRON EMISSION DEVICE, ELECTRON EMISSION TYPE BACKLIGHT UNIT EMPLOYING THE ELECTRON EMISSION DEVICE, AND METHOD OF MANUFACTURING THE ELECTRON EMISSION DEVICE - An electron emission device is provided having a first substrate and a first electrode on the first substrate. A second electrode is electrically insulated from the first electrode. An electron emission source is electrically connected to the first electrode. A blocking layer is between the first electrode and the second electrode. | 08-20-2009 |
20100164343 | ELECTRON EMISSION DEVICE, ELECTRON EMISSION DISPLAY APPARATUS HAVING THE SAME, AND METHOD OF MANUFACTURING THE SAME - An electron emission device that can uniformly emit electrons and has low manufacturing costs, a display apparatus having improved pixel uniformity by using the electron emission device, and a method of manufacturing the electron emission device, wherein the electron emission device includes a first substrate, a cathode and an electron emission source disposed on the first substrate, a gate electrode electrically insulated from the cathode, an insulating layer interposed between the cathode and the gate electrode to insulate the cathode from the gate electrode, and a resistance layer that contacts the cathode and includes semiconductive carbon nanotubes (CNTs). | 07-01-2010 |
Patent application number | Description | Published |
20120261715 | POWER SEMICONDUCTOR DEVICE AND METHODS FOR FABRICATING THE SAME - A power semiconductor device includes: a drain region of a first conductive type; a drift region of a first conductive type formed on the drain region; a first body region of a second conductive type formed below an upper surface of the drift region; a second body region of a second conductive type formed below the upper surface of the drift region and in the first body region; a third body region of a second conductive type formed by protruding downwards from a lower end of the first body region; a source region of a first conductive type formed below the upper surface of the drift region and in the first body region; and a gate insulating layer formed on channel regions of the first body region and on the drift region between the first body regions. | 10-18-2012 |
20130277793 | POWER DEVICE AND FABRICATING METHOD THEREOF - A power device, which has a Field Stop (FS) layer based on a semiconductor substrate between a collector region and a drift region in an FS-IGBT structure, wherein the thickness of the FS layer and the impurity density of the collector region are easy to adjust and the FS layer has an improved function, and a fabricating method thereof. | 10-24-2013 |
20140141584 | POWER SEMICONDUCTOR DEVICE AND METHODS FOR FABRICATING THE SAME - A power semiconductor device includes: a drain region of a first conductive type; a drift region of a first conductive type formed on the drain region; a first body region of a second conductive type formed below an upper surface of the drift region; a second body region of a second conductive type formed below the upper surface of the drift region and in the first body region; a third body region of a second conductive type formed by protruding downwards from a lower end of the first body region; a source region of a first conductive type formed below the upper surface of the drift region and in the first body region; and a gate insulating layer formed on channel regions of the first body region and on the drift region between the first body regions. | 05-22-2014 |
20140312382 | POWER DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are a power device having an improved field stop layer and a method of manufacturing the same. The power device includes: a first field stop layer formed of a semiconductor substrate and of a first conductive type; a second field stop layer formed on the first field stop layer and of the first conductive type, the second field stop layer having a region with an impurity concentration higher than the first field stop layer; a drift region formed on the second field stop layer and of the first conductive type, the drift region having an impurity concentration lower than the first field stop layer; a plurality of power device cells formed on the drift region; and a collector region formed below the first field stop layer, wherein the second field stop layer includes a first region having a first impurity concentration and a second region having a second impurity concentration higher than the first impurity concentration. | 10-23-2014 |