Patent application number | Description | Published |
20100190320 | METHODS OF REMOVING WATER FROM SEMICONDUCTOR SUBSTRATES AND METHODS OF DEPOSITING ATOMIC LAYERS USING THE SAME - Provided are methods of removing water adsorbed or bonded to a surface of a semiconductor substrate, and methods of depositing an atomic layer using the method of removing water described herein. The method of removing water includes applying a chemical solvent to the surface of a semiconductor substrate, and removing the chemical solvent from the surface of the semiconductor substrate. | 07-29-2010 |
20100200950 | Semiconductor device having dielectric layer with improved electrical characteristics and associated methods - A semiconductor device having a dielectric layer with improved electrical characteristics and associated methods, the semiconductor device including a lower metal layer, a dielectric layer, and an upper metal layer sequentially disposed on a semiconductor substrate and an insertion layer disposed between the dielectric layer and at least one of the lower metal layer and the upper metal layer, wherein the dielectric layer includes a metal oxide film and the insertion layer includes a metallic material film. | 08-12-2010 |
20100209595 | Methods of Forming Strontium Ruthenate Thin Films and Methods of Manufacturing Capacitors Including the Same - In a method of forming a strontium ruthenate thin film using water vapor as an oxidizing agent, a strontium source and a ruthenium source are used. The strontium source includes a cyclopentadienyl (Cp) ligand, an alkoxide ligand, an alkyl ligand, an amide ligand or a halide ligand, and the ruthenium source includes a beta diketonate ligand. | 08-19-2010 |
20110045183 | METHODS OF FORMING A LAYER, METHODS OF FORMING A GATE STRUCTURE AND METHODS OF FORMING A CAPACITOR - In a method of forming a layer, a precursor including a metal and a ligand chelating to the metal is stabilized by contacting the precursor with an electron donating compound to provide a stabilized precursor onto a substrate. A reactant is introduced onto the substrate to bind to the metal in the stabilized precursor. The precursor stabilized by the electron donating compound has an improved thermal stability and thus the precursor is not dissociated at a high temperature atmosphere, and the layer having a uniform thickness is formed on the substrate. | 02-24-2011 |
20110095397 | Semiconductor Structures Including Dielectric Layers and Capacitors Including Semiconductor Structures - Semiconductor structures including a first conductive layer; a dielectric layer on the first conductive layer; a second conductive layer on the dielectric layer; and a crystallized seed layer in at least one of a first portion between the first conductive layer and the dielectric layer and a second portion between the dielectric layer and the second conductive layer. Related capacitors and methods are also provided herein. | 04-28-2011 |
20110102968 | MULTILAYER STRUCTURE, CAPACITOR INCLUDING THE MULTILAYER STRUCTURE AND METHOD OF FORMING THE SAME - In a multilayer structure and a method of forming the same, a conductive layer including a metal nitride and a dielectric layer positioned on a surface of the conductive layer and having a high dielectric constant. The metal nitride comprises one of niobium, vanadium and compositions thereof. Thus, the EOT and leakage current of the multilayer structure may be sufficiently improved. | 05-05-2011 |
20110104907 | METHODS OF FORMING A METAL SILICATE LAYER AND METHODS OF FABRICATING A SEMICONDUCTOR DEVICE INCLUDING THE METAL SILICATE LAYER - Methods of forming a metal silicate layer and methods of fabricating a semiconductor device including the metal silicate layer are provided, the methods of forming the metal silicate layer include forming the metal silicate using a plurality of silicon precursors. The silicon precursors are homoleptic silicon precursors in which ligands bound to silicon have the same molecular structure. | 05-05-2011 |
20110136317 | Semiconductor device, method of fabricating the same, and semicondutor module, electronic circuit board, and electronic system including the device - Example embodiments relate to a semiconductor device including an oxide dielectric layer and a non-oxide dielectric layer, a method of fabricating the device, and a semiconductor module, an electronic circuit board, and an electronic system including the device. The semiconductor device may include a lower electrode, an oxide dielectric layer disposed on the lower electrode, a non-oxide dielectric layer disposed on the oxide dielectric layer, and an upper electrode disposed on the non-oxide dielectric layer. | 06-09-2011 |
20110151639 | SEMICONDUCTOR DEVICE, METHOD OF FABRICATING THE SAME, SEMICONDUCTOR MODULE, ELECTRONIC CIRCUIT BOARD, AND ELECTRONIC SYSTEM INCLUDING THE DEVICE - Provided are a semiconductor device, a method of fabricating the same, and a semiconductor module, an electronic circuit board, and an electronic system including the device. The semiconductor device includes a lower electrode, a rutile state lower vanadium dioxide layer on the lower electrode, a rutile state titanium oxide on the lower vanadium dioxide layer, and an upper electrode on the titanium oxide layer. | 06-23-2011 |
20120094022 | METHOD OF FORMING METAL THIN FILM - Provided is a method of forming a metal thin film which can reduce leakage current while improving electric properties by improving step coverage of a device. The method of forming a metal thin film includes supplying a metal precursor including chlorine, purging byproducts produced after the supplying of the metal precursor by injecting a purge gas, supplying a reactant to allow the reactant and the metal precursor to react with each other to form a thin film layer, and purging the byproducts produced after the reaction by injecting a purge gas, wherein before the supplying of the metal precursor, the method further includes supplying a reactant to be adsorbed on a treated product. | 04-19-2012 |
20120178254 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE HAVING DIELECTRIC LAYER WITH IMPROVED ELECTRICAL CHARACTERISTICS - A semiconductor device having a dielectric layer with improved electrical characteristics and associated methods, the semiconductor device including a lower metal layer, a dielectric layer, and an upper metal layer sequentially disposed on a semiconductor substrate and an insertion layer disposed between the dielectric layer and at least one of the lower metal layer and the upper metal layer, wherein the dielectric layer includes a metal oxide film and the insertion layer includes a metallic material film. | 07-12-2012 |
20120225548 | METHODS OF FORMING DIELECTRIC LAYERS AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME - To form a dielectric layer, an organometallic precursor is adsorbed on a substrate loaded into a process chamber. The organometallic precursor includes a central metal and ligands bound to the central metal. An inactive oxidant is provided onto the substrate. The inactive oxidant is reactive with the organometallic precursor. An active oxidant is also provided onto the substrate. The active oxidant has a higher reactivity than that of the inactive oxidant. | 09-06-2012 |
20120276721 | METHOD OF FORMING AN OXIDE LAYER AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING THE OXIDE LAYER - A method of forming an oxide layer. The method includes: forming a layer of reaction-inhibiting functional groups on a surface of a substrate; forming a layer of precursors of a metal or a semiconductor on the layer of the reaction-inhibiting functional groups; and oxidizing the precursors of the metal or the semiconductor in order to obtain a layer of a metal oxide or a semiconductor oxide. According to the method, an oxide layer having a high thickness uniformity may be formed and a semiconductor device having excellent electrical characteristics may be manufactured. | 11-01-2012 |
20130244445 | Method of Fabricating Semiconductor Device - Methods of fabricating a semiconductor device include forming a deposited film on a semiconductor substrate in a process chamber by repeatedly forming unit layers on the semiconductor substrate. The unit layer is formed by forming a preliminary unit layer on the semiconductor substrate by supplying a process material including a precursor material and film-control material into the process chamber, purging the process chamber, forming a unit layer from the preliminary unit layer, and again purging the process chamber. The precursor material includes a central atom and a ligand bonded to the central atom, and the film-control material includes a hydride of the ligand. | 09-19-2013 |
20150031186 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE HAVING DIELECTRIC LAYER WITH IMPROVED ELECTRICAL CHARACTERISTICS - A semiconductor device having a dielectric layer with improved electrical characteristics and associated methods, the semiconductor device including a lower metal layer, a dielectric layer, and an upper metal layer sequentially disposed on a semiconductor substrate and an insertion layer disposed between the dielectric layer and at least one of the lower metal layer and the upper metal layer, wherein the dielectric layer includes a metal oxide film and the insertion layer includes a metallic material film. | 01-29-2015 |