Patent application number | Description | Published |
20100261099 | PHOTOMASK BLANK AND PHOTOMASK MAKING METHOD - A photomask blank comprises a transparent substrate, a light-shielding film deposited on the substrate and comprising a metal or metal compound susceptible to fluorine dry etching, and an etching mask film deposited on the light-shielding film and comprising another metal or metal compound resistant to fluorine dry etching. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy. | 10-14-2010 |
20100261100 | PHOTOMASK BLANK AND PHOTOMASK - A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy. | 10-14-2010 |
20100261101 | PHOTOMASK BLANK AND PHOTOMASK - A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy. | 10-14-2010 |
20120064438 | PHOTOMASK BLANK AND MAKING METHOD, PHOTOMASK, LIGHT PATTERN EXPOSURE METHOD, AND DESIGN METHOD OF TRANSITION METAL/SILICON BASE MATERIAL FILM - A photomask blank has a film of a transition metal/silicon base material comprising a transition metal, silicon, oxygen and nitrogen, having an oxygen content of at least 3 atom %, and satisfying the formula: 4×C | 03-15-2012 |
20120212514 | APPARATUS, A METHOD AND A PROGRAM THEREOF - Apparatus and method capable of extracting a part where information highly necessary for a user is displayed without using information registered in advance. The method includes detecting an operation part in a screen, comparing a first screen and a second screen, determining a priority order of objects in the first and second screens based on a result of the comparing and displaying at least one of the objects in the first and second screens on a display device based on the priority order. The screen is changed to the first screen by first operation of the operation part and the screen is changed to the second screen by a second operation of the operation part. | 08-23-2012 |
20120251930 | PHOTOMASK BLANK AND METHOD FOR MANUFACTURING PHOTOMASK - According to one embodiment, a photomask blank wherein a second film is stacked on a first film, the first film containing chromium and which is not substantially etched by the dry etching using fluorine and which is etchable by the dry etching using oxygen-containing chlorine, and the second film containing no chromium and which is etchable by dry etching using fluorine and dry etching using oxygen-containing chlorine. | 10-04-2012 |
20130130159 | LIGHT PATTERN EXPOSURE METHOD, HALFTONE PHASE SHIFT MASK, AND HALFTONE PHASE SHIFT MASK BLANK - A light pattern exposure method is by irradiating ArF excimer laser light to a resist film through a halftone phase shift mask. The mask includes a transparent substrate and a pattern of halftone phase shift film of a material comprising a transition metal, silicon, nitrogen and oxygen and having an atomic ratio (Met/Si) of 0.18-0.25, a nitrogen content of 25-50 atom %, and an oxygen content of 5-20 atom %. The mask may be irradiated with ArF excimer laser light in a cumulative dose of at least 10 kJ/cm | 05-23-2013 |
20130130160 | LIGHT PATTERN EXPOSURE METHOD, PHOTOMASK, AND PHOTOMASK BLANK - A light pattern exposure method is by irradiating ArF excimer laser light to a resist film through a photomask. The photomask includes a transparent substrate and a pattern of optical film of a material comprising a transition metal, silicon, nitrogen and oxygen, with contents thereof falling in a specific range. The photomask may be irradiated with ArF excimer laser light in a cumulative dose of at least 10 kJ/cm | 05-23-2013 |