Patent application number | Description | Published |
20130270553 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device in which generation of a parasitic channel in an end region of an oxide semiconductor film is suppressed. The semiconductor device includes a gate electrode, an oxide semiconductor film, a source electrode and a drain electrode, and a channel region formed in the oxide semiconductor film. The channel region is formed between a first side surface of the source electrode and a second side surface of the drain electrode opposite to the first side surface. The oxide semiconductor film has an end region which does not overlap with the gate electrode. The end region which does not overlap with the gate electrode is positioned between a first region that is the nearest to one end of the first side surface and a second region that is the nearest to one end of the second side surface. | 10-17-2013 |
20130270554 | SEMICONDUCTOR DEVICE - The semiconductor conductor device includes a gate electrode | 10-17-2013 |
20130270555 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to suppress conducting-mode failures of a transistor that uses an oxide semiconductor film and has a short channel length. A semiconductor device includes a gate electrode | 10-17-2013 |
20140021466 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film in contact with the gate insulating film and including a channel formation region which overlaps with the gate electrode; a source electrode and a drain electrode over the oxide semiconductor film; and an oxide insulating film over the oxide semiconductor film, the source electrode, and the drain electrode. The source electrode and the drain electrode each include a first metal film having an end portion at the end of the channel formation region, a second metal film over the first metal film and containing copper, and a third metal film over the second metal film. The second metal film is formed on the inner side than the end portion of the first metal film. | 01-23-2014 |
20150060846 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device in which the threshold is adjusted is provided. In a transistor including a semiconductor, a source or drain electrode electrically connected to the semiconductor, a gate electrode, and an electron trap layer between the gate electrode and the semiconductor, the electron trap layer includes crystallized hafnium oxide. The crystallized hafnium oxide is deposited by a sputtering method using hafnium oxide as a target. When the substrate temperature is Tsub (° C.) and the proportion of oxygen in an atmosphere is P (%) in the sputtering method, P≧45−0.15×Tsub is satisfied. The crystallized hafnium oxide has excellent electron trapping properties. By the trap of an appropriate number of electrons, the threshold of the semiconductor device can be adjusted. | 03-05-2015 |
20150069385 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for adjusting threshold of a semiconductor device is provided. In a plurality of semiconductor devices each including a semiconductor, a source or drain electrode electrically in contact with the semiconductor, a gate electrode, and a charge trap layer between a gate electrode and the semiconductor, a state where the potential of the gate electrode is set higher than the potential of the source or drain electrode while the semiconductor devices are heated at 150° C. or higher and 300° C. or lower is kept for one second or longer to trap electrons in the charge trap layer, so that the threshold is increased and Icut is reduced. Here, the potential difference between the gate electrode and the source or drain electrode is set so that it is different between the semiconductor devices, and the thresholds of the semiconductor devices are adjusted to be appropriate to each purpose. | 03-12-2015 |
20150069387 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device with adjusted threshold is provided. In a semiconductor device including a semiconductor, a source or drain electrode electrically connected to the semiconductor, a first gate electrode and a second gate electrode between which the semiconductor is provided, a charge trap layer provided between the first gate electrode and the semiconductor, and a gate insulating layer provided between the second gate electrode and the semiconductor, a threshold is increased by trapping electrons in the charge trap layer by keeping a potential of the first gate electrode at a potential higher than a potential of the source or drain electrode for 1 second or more while heating. After the threshold adjustment process, the first gate electrode is removed or insulated from other circuits. Alternatively, a resistor may be provided between the first gate electrode and other circuits. | 03-12-2015 |