| Patent application number | Description | Published |
|---|
| 20090103583 | Surface emitting laser and manufacturing method thereof - On an n-type GaN buffer layer serving as a common semiconductor layer, mesa regions are formed. The mesa region is formed of a semiconductor stack formed of an n-type GaN layer, an active layer and a p-type GaN layer. A current blocking region is not formed in the mesa region, and the mesa diameter of the mesa region is formed to be not more than 15 μm. The mesa region is formed by selective growth. The mesa region without a surface damage allows sufficient constriction of current and an induced radiation of laser with low current. | 04-23-2009 |
| 20090162008 | POLARIZATION-INDEPENDENT TWO-DIMENSIONAL PHOTONIC CRYSTAL MULTIPLEXER/DEMULTIPLEXER - The present invention is aimed at providing a two-dimensional photonic crystal wavelength multiplexer/demultiplexer capable of multiplexing and demultiplexing both TE and TM-polarized lights. In the wavelength multiplexer/demultiplexer, first and second resonators and having the same resonance wavelength λr are provided between first and second waveguides and which are separately provided in a two-dimensional photonic crystal having a photonic band gap for the TE polarization. A first polarization converter for converting a TM-polarized light to a TE-polarized light is provided on the first waveguide | 06-25-2009 |
| 20090238227 | Semiconductor light emitting device - A semiconductor light emitting device is made of a group III nitride semiconductor having a major growth surface defined by a nonpolar plane or a semipolar plane, and has a quantum well layer containing In in a light emitting layer. A strain compensation layer made of a group III nitride semiconductor containing Al and having a lattice constant smaller than the lattice constant of the quantum well layer in a strain-free state is interposed in the light emitting layer of a quantum well structure having the quantum well layer and a barrier layer or in an adjacent layer adjacent to the light emitting layer. | 09-24-2009 |
| 20100008391 | Nitride based semiconductor device and fabrication method for the same - A nitride based semiconductor device includes: an n-type cladding layer; an n-type GaN based guide layer placed on the n-type cladding layer; an active layer placed on the n-type GaN based guide layer; a p-type GaN based guide layer placed on the active layer; an electron block layer placed on the p-type GaN based guide layer; a stress relaxation layer placed on the electron block layer; and a p-type cladding layer placed on the stress relaxation layer, and the nitride based semiconductor device alleviates the stress occurred under the influence of the electron block layer, does not affect light distribution by the electron block layer, reduces threshold current, can suppress the degradation of reliability, can suppress degradation of the emitting end surface of the laser beam, can improve the far field pattern, and is long lasting, and fabrication method of the device is also provided. | 01-14-2010 |
| 20100195687 | Semiconductor laser device - A semiconductor laser device has a semiconductor laser diode structure made of group III nitride semiconductors having major growth surfaces defined by nonpolar planes or semipolar planes. The semiconductor laser diode structure includes a p-type cladding layer and an n-type cladding layer, a p-type guide layer and an n-type guide layer held between the p-type cladding layer and the n-type cladding layer, and an active layer containing In held between the p-type guide layer and the n-type guide layer. The In compositions in the p-type guide layer and the n-type guide layer are increased as approaching the active layer respectively. Each of the p-type guide layer and the n-type guide layer may have a plurality of In | 08-05-2010 |
| 20110159356 | BATTERY AND METHOD OF MANUFACTURING SAME - It is an object of the present invention to provide a battery in which current collecting connector | 06-30-2011 |
| 20110293995 | CONDUCTOR FOR CONNECTING TERMINALS, ASSEMBLED BATTERY, AND METHOD FOR PRODUCING ASSEMBLED BATTERY - A conductor for connecting terminals of a battery in which a conductor for connecting terminals ( | 12-01-2011 |
| 20120140785 | NITRIDE BASED SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR THE SAME - A nitride based semiconductor device includes: an n-type cladding layer; an n-type GaN based guide layer placed on the n-type cladding layer; an active layer placed on the n-type GaN based guide layer; a p-type GaN based guide layer placed on the active layer; an electron block layer placed on the p-type GaN based guide layer; a stress relaxation layer placed on the electron block layer; and a p-type cladding layer placed on the stress relaxation layer, and the nitride based semiconductor device alleviates the stress occurred under the influence of the electron block layer, does not affect light distribution by the electron block layer, reduces threshold current, can suppress the degradation of reliability, can suppress degradation of the emitting end surface of the laser beam, can improve the far field pattern, and is long lasting, and fabrication method of the device is also provided. | 06-07-2012 |
