Patent application number | Description | Published |
20080218439 | PLASMA DISPLAY PANEL AND IMAGING DEVICE USING THE SAME - A plasma display panel and an imaging device realize a high luminous efficiency, a long lifetime and stable driving. The plasma display panel uses a discharge-gas mixture containing at least Xe, Ne and He. A Xe proportion of the discharge-gas mixture is in a range of from 2% to 20%, a He proportion of the discharge-gas mixture is in a range of from 15% to 50%, the He proportion is greater than the Xe proportion, and a total pressure of the discharge-gas mixture is in a range of from 400 Torr to 550 Torr. A width of a voltage pulse to be applied to an electrode serving as an address electrode is 2 μs or less. | 09-11-2008 |
20080303404 | PLASMA DISPLAY PANEL - A transmission type PDP having a contrast enhanced by reducing or preventing influences of diffuse reflection by a phosphor layer is described. This PDP includes: a first substrate structure (rear unit) having a pair of display electrodes formed thereto; a second substrate structure (front unit) having an address electrode formed thereto and having a display surface; a barrier rib; and a phosphor layer between the barrier ribs. A width of the address electrode is formed to be the same as or larger than a width of a bottom surface portion of the phosphor layer between the barrier ribs, thereby hiding the bottom portion of the phosphor by the address electrode. In this manner, the diffuse reflection at the bottom surface portion of the phosphor layer is mostly suppressed. | 12-11-2008 |
20080303440 | PLASMA DISPLAY PANEL - A transmission-type PDP capable of dealing with a moiré pattern which occurs on a display surface of a panel is provided. This PDP comprises: a rear unit having a pair of lateral display electrodes; a front unit having a longitudinal address electrode and including a display surface; and a barrier rib having transmittance and a phosphor layer. An electric potential of the address electrode is held constant in a display period. In this manner, a layer of the longitudinally striped address electrodes (first shielding layer) achieves an effect of shielding electromagnetic wave. Further, a layer of a laterally-striped electrode pattern (second shielding layer) may be arranged on a front surface of the panel. Superposing the above two shielding layers prevents the occurrence of a moiré pattern. | 12-11-2008 |
20080315767 | PLASMA DISPLAY PANEL - A transmission-type PDP having high emission efficiency is provided. This PDP comprises: a first substrate structure (rear unit) having a pair of display electrodes; a second substrate structure (front unit) having an address electrode and a display surface; a barrier rib being translucent; and a phosphor layer. And, at the rear unit side, a specular reflecting film having light reflectivity toward the front side is provided to a first substrate. For example, the specular reflecting film is adhered to the rear side of the first glass substrate. The emission from the phosphor layer is reflected by the specular reflecting film and transmitted by the barrier rib, thereby utilizing the emission as luminance. | 12-25-2008 |
20090140951 | PLASMA DISPLAY PANEL - A technology capable of stably maintaining the address discharge characteristics even in a long-term drive of a PDP is provided. A PDP has a structure where projecting portions are provided to a display electrode pair used for surface discharge so as to extend toward a reverse slit side in a cell region. Address discharge is performed between a scan electrode having the projecting portion and an address electrode. Since surface discharge in the display electrode pair and address discharge using the projecting portion are positionally separated from each other in this structure, address discharge characteristics are stabilized even if a protective layer is degraded due to the surface discharge. | 06-04-2009 |
Patent application number | Description | Published |
20080296497 | METHOD AND APPARATUS FOR SPECIMEN FABRICATION - A system for analyzing a semiconductor device, including: a first ion beam apparatus including: a sample stage to mount a sample substrate; a vacuum chamber in which the sample stage is placed; an ion beam irradiating optical system to irradiate the sample substrate; a specimen holder that accommodates a plurality of specimens separated from the sample substrate by the irradiation of the ion beam; and a probe to extract the separated specimen from the sample substrate, and to transfer the separated specimen to the specimen holder; a second ion beam apparatus that carries out a finishing process to the specimen; and an analyzer to analyze the finished specimen, wherein the first ion beam apparatus separates the specimen and the probe in a vacuum condition. | 12-04-2008 |
20080296516 | METHOD AND APPARATUS FOR SPECIMEN FABRICATION - A specimen fabrication apparatus, including: an ion beam irradiating optical system to irradiate a sample placed in a chamber with an ion beam; a specimen holder to mount a specimen separated by the irradiation with the ion beam; a holder cassette to hold the specimen holder; a sample stage to hold, the sample and the holder cassette; and a probe to move the specimen to the specimen holder, wherein the holder cassette is transferred to outside of the chamber in a condition of holding the specimen holder with the specimen mounted. | 12-04-2008 |
20090008578 | METHOD AND APPARATUS FOR SPECIMEN FABRICATION - A specimen fabrication apparatus, including: an ion beam irradiating optical system to irradiate a sample placed in a chamber, with an ion beam; a specimen holder to mount a specimen separated by the irradiation with the ion beam; a holder cassette to hold the specimen holder; a sample stage to hold the sample and the holder cassette; and a probe to move the specimen to the specimen holder, wherein the holder cassette is transferred to outside of the chamber in a condition of holding the specimen holder with the specimen mounted. | 01-08-2009 |
20110140006 | METHOD AND APPARATUS FOR SPECIMEN FABRICATION - A focused ion beam apparatus, including: a specimen transferring unit having a probe to which a micro-specimen extracted from a specimen, can be joined through a joining deposition film, for transferring the micro-specimen to a sample holder; and wherein, the specimen transferring unit holds the probe which is joined through the joining deposition film to the micro-specimen extracted from the specimen, and the sample stage moves so that the sample holder mounted on the holder clasp is provided into an irradiated range of the focused ion beam, and the specimen transferring unit approaches the probe to the sample holder, and the gas nozzle supplies the deposition gas so that the micro-specimen is fixed to the sample holder through a fixing deposition film, and the ion beam irradiating optical system irradiates the focused ion beam to the micro-specimen fixed to the sample holder for various procedures. | 06-16-2011 |
20120085924 | METHOD AND APPARATUS FOR SPECIMEN FABRICATION - A focused ion beam apparatus, including: a sample holder provided with a fixing surface for fixing, via a deposition film, a micro-specimen extracted from a specimen using a method for fabrication by a focused ion beam, in which a width of the fixing surface is smaller than 50 microns; a specimen transferring unit having a probe to which the specimen can be joined through the deposition film, and transferring the micro-specimen extracted from the specimen by the focused ion-beam fabrication method, to the sample holder; and a sample chamber in which the sample, the sample holder and the probe are laid out, wherein, in the sample chamber, the micro-specimen extracted from the specimen by the focused ion-beam fabrication method is fixed to the fixing surface of the sample holder through the deposition film, and the micro-specimen fixed to the fixing surface is fabricated by irradiating the focused ion beam. | 04-12-2012 |
Patent application number | Description | Published |
20120199758 | GAS FIELD IONIZATION ION SOURCE AND ION BEAM DEVICE - Provided is a gas field ionization ion source capable of emitting heavy ions with high brightness which are suitable for processing a sample. The gas field ionization ion source according to the present invention includes a temperature controller individually controlling the temperature of the tip end of an emitter electrode ( | 08-09-2012 |
20120217391 | CHARGED PARTICLE MICROSCOPE - The charged particle beam microscope is configured of: a gas field ionization ion source ( | 08-30-2012 |
20130119252 | GAS FIELD ION SOURCE AND METHOD FOR USING SAME, ION BEAM DEVICE, AND EMITTER TIP AND METHOD FOR MANUFACTURING SAME - To provide a gas field ion source having a high angular current density, the gas field ion source is configured such that at least a base body of an emitter tip configuring the gas field ion source is a single crystal metal, such that the apex of the emitter tip is formed into a pyramid shape or a cone shape having a single atom at the top, and such that the extraction voltage in the case of ionizing helium gas by the single atom is set to 10 kV or more. | 05-16-2013 |
20130126731 | Charged Particle Microscope and Ion Microscope - In order to provide a safe and environmentally-friendly charged gas particle microscope that exhibits a superior ionized gas-utilization efficiency and economic efficiency, the gas field ion source of a charged particle microscope is equipped with a vacuum chamber in which are provided a vacuum chamber evacuation mechanism, an acicular emitter tip, an extraction electrode disposed facing the emitter tip, and a mechanism for supplying a gas to the vicinity of the emitter tip, and is configured so that the gas in the region around the tip of acicular ion emitter is ionized and extracted as an ion beam. Therein, the evacuation mechanism and the gas supply mechanism are connected, and a material for adhering the gas to be ionized is disposed between the evacuation mechanism and the gas supply mechanism. | 05-23-2013 |
20140326897 | GAS FIELD IONIZATION ION SOURCE AND ION BEAM DEVICE - Provided is a gas field ionization ion source capable of emitting heavy ions with high brightness which are suitable for processing a sample. The gas field ionization ion source according to the present invention includes a temperature controller individually controlling the temperature of the tip end of an emitter electrode ( | 11-06-2014 |
Patent application number | Description | Published |
20140191128 | EMITTER, GAS FIELD ION SOURCE, AND ION BEAM DEVICE - Provided is an ion source emitter that does not cause significant extraction voltage changes even when an apex portion of the emitter is repeatedly regenerated. The emitter has a shape of a triangular pyramid with the single atom at the apex. An apex portion of the emitter is substantially shaped like a hexagon when viewed from the apex side. | 07-10-2014 |
20140197329 | ION BEAM DEVICE - To avoid a glow discharge during the use of a conventional gas ionization chamber, there is no alternative but to increase a gas pressure. Therefore, while a conventional gas ionization chamber is used, an ion current cannot be increased by raising a gas introduction pressure. An object of the present invention is to increase the ion current by raising the gas pressure and prevent an ion beam from being scattered by an ionization gas. The gas is supplied from a structure maintained at a ground potential to prevent the application of a high voltage to the vicinity of an ionization gas introduction port at which the gas pressure is relatively high. Further, the ionization gas existing in a region through which the ion beam passes is preferentially reduced by performing differential evacuation from a lens opening in a lens electrode that forms an acceleration/focusing lens. | 07-17-2014 |
20140299768 | ION SOURCE AND ION BEAM DEVICE USING SAME - Provided is a charged particle beam microscope which has a small mechanical vibration amplitude of a distal end of an emitter tip, is capable of obtaining an ultra-high resolution sample observation image and removing shaking or the like of the sample observation image. A gas field ion source includes: an emitter tip configured to generate ions; an emitter-base mount configured to support the emitter tip; a mechanism configured to heat the emitter tip; an extraction electrode installed to face the emitter tip; and a mechanism configured to supply a gas to the vicinity of the emitter tip, wherein the emitter tip heating mechanism is a mechanism of heating the emitter tip by electrically conducting a filament connecting at least two terminals, the terminals are connected by a V-shaped filament, an angle of the V shape is an obtuse angle, and the emitter tip is connected to a substantial center of the filament. | 10-09-2014 |
20150041650 | Gas Field Ionization Ion Source and Ion Beam Apparatus - In the case of a conventional gas field ionization ion source, it was not possible to carry out an analysis with a high S/N ratio and a high-speed machining process because the current amount of an ion beam is small. In view of these problems, the present invention has been devised, and its object is to obtain a large ion beam current, while suppressing a probability of damaging an emitter electrode. The present invention is characterized by a process in which an ion beam is emitted at least in two operation states including a first operation state in which, when a first extraction voltage is applied, with the gas pressure being set to a first gas pressure, ions are emitted from a first ion emission region at the apex of the emitter electrode, and a second operation state in which, when a second extraction voltage that is higher than the first extraction voltage is applied, with the gas pressure being set to a second gas pressure that is higher than the first gas pressure, ions are emitted from a second ion emission region that is larger than the first ion emission region. | 02-12-2015 |
20150048247 | SCANNING ION MICROSCOPE AND SECONDARY PARTICLE CONTROL METHOD - The present invention is provided to enable a detailed inspection of a specimen and preventing a distortion of an observation image even when a specimen containing an insulating material is partially charged. For a scanning ion microscope utilizing a gas field ionization ion source, a thin film is disposed between an ion optical system and a specimen, and an ion beam is applied to and transmitted through this thin film in order to focus a neutralized beam on the specimen. Furthermore, an electrode for regulating secondary electrons discharged from this thin film is provided in order to eliminate mixing of noises into an observation image. | 02-19-2015 |
20150083930 | CHARGED PARTICLE MICROSCOPE - The ionized gas supplied to the emitter tip of a gas field ionization ion source is cooled and purified to enable supplying a reliable and stable ion beam. Impurities contained in the ionized gas destabilize the field ionization ion source. The invention is configured to include a first heat exchanger thermally connected to a part of the field ionization ion source, a cryocooler capable of cooling a second gas line and a cold head, the second gas line being connected to the first heat exchanger and circulating a refrigerant, and a second heat exchanger that cools the first and second gas lines and is connected to the cold head. | 03-26-2015 |