Yoshika
Yoshika Hatasako, Kitakyushu-Shi JP
Patent application number | Description | Published |
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20150013741 | THERMOELECTRIC CONVERSION MATERIAL - The present invention provides a thermoelectric conversion material of which the structure is controlled to have nano-order microscopic pores and which has a low thermal conductivity and has an improved thermoelectric performance index. In the thermoelectric conversion material having a thermoelectric semiconductor layer formed on a block copolymer substrate that comprises a block copolymer having microscopic pores, wherein the block copolymer comprises a polymer unit (A) formed of a monomer capable of forming a homopolymer having a glass transition temperature of 50° C. or higher, and a polymer unit (B) formed of a conjugated dienic polymer. | 01-15-2015 |
Yoshika Kaneko, Hunabashi-Shi JP
Patent application number | Description | Published |
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20090092166 | Nitride semiconductor light-emitting device - A nitride semiconductor light-emitting device wherein a substrate or nitride semiconductor layer has a defect concentration region and a low defect density region other than the defect concentration region. A portion including the defect concentration region of the nitride semiconductor layer or substrate has a trench region deeper than the low defect density region. Thus by digging the trench in the defect concentration region, the growth detection is uniformized, and the surface planarity is improved. The uniformity of the characteristic in the wafer surface leads to improvement of the yield. | 04-09-2009 |
20100150199 | Nitride semiconductor light-emitting device - A nitride semiconductor light-emitting device wherein a substrate or nitride semiconductor layer has a defect concentration region and a low defect density region other than the defect concentration region. A portion including the defect concentration region of the nitride semiconductor layer or substrate has a trench region deeper than the low defect density region. Thus by digging the trench in the defect concentration region, the growth detection is uniformized, and the surface planarity is improved. The uniformity of the characteristic in the wafer surface leads to improvement of the yield. | 06-17-2010 |
Yoshika Kaneko, Funabashi-Shi JP
Patent application number | Description | Published |
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20110136276 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATION THEREOF - A nitride semiconductor laser device uses a substrate with low defect density, contains reduced strains inside a nitride semiconductor film, and thus offers a satisfactorily long useful life. On a GaN substrate ( | 06-09-2011 |
20120220122 | NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Provided are a nitride semiconductor device and a manufacturing method thereof. The nitride semiconductor device includes an insulating layer and a metal layer formed on a nitride semiconductor layer. The insulating layer makes contact with the nitride semiconductor layer. A separation preventing layer is formed between the insulating layer and the metal layer so as to make contact with each of these layers. The separation preventing layer has, as a main component, at least one kind of oxide of a metal selected from the group consisting of tungsten, molybdenum, chromium, titanium, nickel, hafnium, zinc, indium and yttrium. | 08-30-2012 |