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| 20090171230 | SYSTEM AND METHOD FOR ANALYZING WAVES OF ELECTROCARDIOGRAM - Electrocardiogram wave data in which a component of cardiac massage is removed from the electrocardiogram wave data is generated, so that the electrocardiogram wave at the time of cardiopulmonary resuscitation is identified. An electrocardiogram wave processing system of obtaining and processing the electrocardiogram wave data includes a wave identification unit that identifies an electrocardiogram wave from the obtained electrocardiogram wave data, a feature selection unit that selects a feature pattern including a feature when a cardiac massage has been performed with respect to the electrocardiogram wave data identified by the wave identification unit, a generation unit that generates a component of the cardiac massage using the feature pattern selected by the feature selection unit, and a removal unit that removes, from the obtained electrocardiogram wave data, the component of the cardiac massage generated by the generation unit. | 07-02-2009 |
| 20110049531 | POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME - Provided is a power semiconductor device including: an insulating substrate; a circuit pattern formed on an upper surface of the insulating substrate; a power semiconductor formed on the circuit pattern; a plurality of metal socket electrode terminals formed perpendicularly to the circuit pattern or the power semiconductor so as to be in conduction with external terminals; an integral resin sleeve in which a plurality of sleeve parts are integrated, the plurality of sleeve parts being fitted with the plurality of metal socket electrode terminals from above the plurality of metal socket electrode terminals and having openings at both ends thereof; and a molding resin covering the insulating substrate, the circuit pattern, the power semiconductor, the electrode terminals, and the integral resin sleeve. | 03-03-2011 |
| 20110087727 | INFORMATION PROCESSING SYSTEM, INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD, AND COMPUTER PROGRAM - An information processing system is disclosed. The system includes: a client that executes information display processing; and a server that creates a display structure description file applied in the information display processing, wherein the client acquires image data reference information and transmits display structure description file creating data including the image data reference information to the server, the server creates the display structure description file and transmits the created display structure description file to the client, and the client executes processing for displaying a map on a display unit on the basis of the display structure description file received from the server and acquiring image data from a storage unit within the client on the basis of the image data reference information recorded in the display structure description file and then displaying the acquired image data on the display unit. | 04-14-2011 |
| 20110134257 | SYSTEM, APPARATUS, METHOD, PROGRAM AND RECORDING MEDIUM FOR PROCESSING IMAGE - An image processing system may include an imaging device for capturing an image and an image processing apparatus for processing the image. The imaging device may include an imaging unit for capturing the image, a first recording unit for recording information relating to the image, the information being associated with the image, and a first transmission control unit for controlling transmission of the image to the image processing apparatus. The image processing apparatus may include a reception control unit for controlling reception of the image transmitted from the imaging device, a feature extracting unit for extracting a feature of the received image, a second recording unit for recording the feature, extracted from the image, the feature being associated with the image, and a second transmission control unit for controlling transmission of the feature to the imaging device. | 06-09-2011 |
| 20110260315 | POWER BLOCK AND POWER SEMICONDUCTOR MODULE USING SAME - A power block includes an insulating substrate, a conductive pattern formed on the insulating substrate, a power semiconductor chip bonded onto the conductive pattern by lead-free solder, a plurality of electrodes electrically connected to the power semiconductor chip and extending upwardly away from the insulating substrate, and a transfer molding resin covering the conductive pattern, the lead-free solder, the power semiconductor chip, and the plurality of electrodes, wherein surfaces of the plurality of electrodes are exposed at an outer surface of the transfer molding resin and lie in the same plane as the outer surface, the outer surface being located directly above the conductive pattern. | 10-27-2011 |
| 20120041327 | SYSTEM AND METHOD FOR ANALYZING WAVES OF ELECTROCARDIOGRAM - Electrocardiogram wave data in which a component of cardiac massage is removed from the electrocardiogram wave data is generated, so that the electrocardiogram wave at the time of cardiopulmonary resuscitation is identified. An electrocardiogram wave processing system of obtaining and processing the electrocardiogram wave data includes a wave identification unit that identifies an electrocardiogram wave from the obtained electrocardiogram wave data, a feature selection unit that selects a feature pattern including a feature when a cardiac massage has been performed with respect to the electrocardiogram wave data identified by the wave identification unit, a generation unit that generates a component of the cardiac massage using the feature pattern selected by the feature selection unit, and a removal unit that removes, from the obtained electrocardiogram wave data, the component of the cardiac massage generated by the generation unit. | 02-16-2012 |
| 20120074516 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device having a plate electrode adapted to a plurality of chips, capable of being produced at low cost, and having high heat cycle property. A semiconductor device according to the present invention includes a plurality of semiconductor chips formed on a substrate, and a plate electrode connecting electrodes of the plurality of semiconductor chips. The plate electrode has half-cut portions formed by half-pressing and the raised sides of the half-cut portions are bonded with the electrodes of the semiconductor chips. | 03-29-2012 |
| 20120110070 | INFORMATION PROCESSING SYSTEM, INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD, AND COMPUTER PROGRAM - An information processing system is disclosed. The system includes: a client that executes information display processing; and a server that creates a display structure description file applied in the information display processing, wherein the client acquires image data reference information and transmits display structure description file creating data including the image data reference information to the server, the server creates the display structure description file and transmits the created display structure description file to the client, and the client executes processing for displaying a map on a display unit on the basis of the display structure description file received from the server and acquiring image data from a storage unit within the client on the basis of the image data reference information recorded in the display structure description file and then displaying the acquired image data on the display unit. | 05-03-2012 |
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| 20080283909 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device includes a second-conductivity-type base region provided on a first-conductivity-type semiconductor layer, a first-conductivity-type source region provided on the second-conductivity-type base region, a gate insulating film covering an inner wall of a trench which passes through the second-conductivity-type base region and reaching the first-conductivity-type semiconductor layer, a gate electrode buried in the trench via the gate insulating film, and a second-conductivity-type region being adjacent to the second-conductivity-type base region below the first-conductivity-type source region, spaced from the gate insulating film, and having a higher impurity concentration than the second-conductivity-type base region. c≧d is satisfied, where d is a depth from an upper surface of the first-conductivity-type source region to a lower end of the gate electrode, and c is a depth from an upper surface of the first-conductivity-type source region to a lower surface of the second-conductivity-type base region. | 11-20-2008 |
| 20090127616 | POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A vertical power semiconductor device includes a first semiconductor layer of a first conductivity type formed in both a cell section and a termination section, the termination section surrounding the cell section, a second semiconductor layer of a second conductivity type formed on the first semiconductor layer in the cell section, a third semiconductor layer of the first conductivity type formed in part on the second semiconductor layer, and a guard ring layer of the second conductivity type formed on the first semiconductor layer in the termination section. Net impurity concentration in the guard ring layer is generally sloped so as to be relatively high on its lower side and relatively low on its upper side. Alternatively, the net impurity concentration in the guard ring layer is constant. | 05-21-2009 |
| 20090146209 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of the first conductivity type provided on a main surface of the first semiconductor layer and having a lower impurity concentration than that of the first semiconductor layer; a third semiconductor layer of a second conductivity type provided on the second semiconductor layer; a fourth semiconductor layer of the first conductivity type selectively provided on the third semiconductor layer; a gate electrode provided in a trench passing through the third semiconductor layer and reaching the second semiconductor layer; a first main electrode contacting the fourth semiconductor layer and contacting the third semiconductor layer through a contact groove provided to pass through the fourth semiconductor layer between the contiguous gate electrodes; a second main electrode provided on an opposite surface to the main surface of the first semiconductor layer; and a fifth semiconductor layer of the second conductivity type provided in an interior portion of the second semiconductor layer corresponding to a part under the contact groove. An uppermost portion of the fifth semiconductor layer contacts the third semiconductor layer, a lowermost portion of the fifth semiconductor layer has a higher impurity concentration than that of the other portion in the fifth semiconductor layer and is located in the second semiconductor layer and not contacting the first semiconductor layer, and the fifth semiconductor layer is narrower from the uppermost portion to the lower most portion. | 06-11-2009 |
| 20090184352 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device includes: a semiconductor substrate; a lateral MOSFET formed in an upper portion of a first region of the semiconductor substrate; a vertical MOSFET formed in a second region of the semiconductor substrate; a backside electrode formed on a lower surface of the semiconductor substrate and connected to a lower region of source/drain regions of the vertical MOSFET; and a connecting member penetrating the semiconductor substrate and connecting one of source/drain regions of the lateral MOSFET to the backside electrode. | 07-23-2009 |
| 20090242977 | SEMICONDUCTOR DEVICE AND DC-DC CONVERTER - A semiconductor device includes: a semiconductor substrate of a first conductivity type; a semiconductor region provided in the semiconductor substrate; a first trench formed in the semiconductor region; a second trench formed in the semiconductor substrate; a trench gate electrode provided in the first trench; and a trench source electrode provided in the second trench. The trench source electrode is shaped like a stripe and connected to the source electrode through its longitudinal portion. | 10-01-2009 |
| 20100013010 | POWER SEMICONDUCTOR DEVICE - An impurity concentration profile in a vertical direction of a p type base contact layer of a power semiconductor device has a two-stage configuration. In other word, the impurity concentration profile is highest at an upper face of the p type base contact layer, has a local minimum value at a position other than the upper face and a lower face of the base contact layer, and has a local maximum value at a position lower than the position of the local minimum value. | 01-21-2010 |
| 20110059586 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of the first conductivity type provided on a main surface of the first semiconductor layer and having a lower impurity concentration than that of the first semiconductor layer; a third semiconductor layer of a second conductivity type provided on the second semiconductor layer; a fourth semiconductor layer of the first conductivity type selectively provided on the third semiconductor layer; a gate electrode provided in a trench passing through the third semiconductor layer and reaching the second semiconductor layer; a first main electrode contacting the fourth semiconductor layer and contacting the third semiconductor layer through a contact groove provided to pass through the fourth semiconductor layer between the contiguous gate electrodes; a second main electrode provided on an opposite surface to the main surface of the first semiconductor layer; and a fifth semiconductor layer of the second conductivity type provided in an interior portion of the second semiconductor layer corresponding to a part under the contact groove. An uppermost portion of the fifth semiconductor layer contacts the third semiconductor layer, a lowermost portion of the fifth semiconductor layer has a higher impurity concentration than that of the other portion in the fifth semiconductor layer and is located in the second semiconductor layer and not contacting the first semiconductor layer, and the fifth semiconductor layer is narrower from the uppermost portion to the lower most portion. | 03-10-2011 |
| 20120086073 | POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A vertical power semiconductor device includes a first semiconductor layer of a first conductivity type formed in both a cell section and a termination section, the termination section surrounding the cell section, a second semiconductor layer of a second conductivity type formed on the first semiconductor layer in the cell section, a third semiconductor layer of the first conductivity type formed in part on the second semiconductor layer, and a guard ring layer of the second conductivity type formed on the first semiconductor layer in the termination section. Net impurity concentration in the guard ring layer is generally sloped so as to be relatively high on its lower side and relatively low on its upper side. Alternatively, the net impurity concentration in the guard ring layer is constant. | 04-12-2012 |
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| 20090001657 | SHEET-FEEDING DEVICE AND IMAGE FORMING APPARATUS PROVIDED WITH THE SAME - A sheet-feeding device includes a sheet-feeding cassette with a sheet holding surface for holding a sheet. A side wall extends up from the sheet holding surface. A sheet-restricting plate is in the cassette on a downstream side in the sheet-feeding direction for setting a position of the sheet in a width direction perpendicular to the sheet-feeding direction. A cassette accommodating section accommodates the sheet-feeding cassette drawably in a direction parallel to the sheet-feeding direction. A projection is on an upstream side in the sheet-feeding direction from the position of the sheet-restricting plate. The projection is formed by partially projecting the side wall of the cassette upward. A height of the projection exceeds a maximum height of a sheet stack that can be accommodated in the cassette, and a height of parts of the side wall other than the projection is lower than the maximum height of the sheet stack. | 01-01-2009 |
| 20090014945 | SHEET-FEEDING MECHANISM, SHEET-FEEDING DEVICE, AND IMAGE FORMING APPARATUS - An object of the present invention is to improve separability with respect to other sheet without damaging sheets in a sheet-feeding mechanism used in an image forming apparatus. For the purpose of accomplishing the object, the sheet-feeding mechanism includes: a feeding roller ( | 01-15-2009 |
| 20100001454 | SHEET FEEDING DEVICE AND IMAGE FORMING APPARATUS INCLUDING SHEET FEEDING DEVICE - A sheet feeding device for feeding a sheet-form recording medium includes: a sheet accommodating portion for accommodating a sheet stack constituted by a plurality of sheets of the sheet-form recording medium; and a first warm air unit having a first blowing port for blowing warm air toward an upper face of the sheet stack accommodated in the sheet accommodating portion. The sheet feeding device preferably further includes a second warm air unit having a second blowing port for blowing warm air onto a side face of the sheet stack that is parallel to a sheet feeding direction. | 01-07-2010 |
| 20100032890 | SHEET FEEDING DEVICE AND IMAGE FORMING APPARATUS INCLUDING SHEET FEEDING DEVICE - A sheet feeding device has a sheet accommodating portion for accommodating a sheet stack, a sheet carrying plate for carrying the sheet stack and a pickup roller that dispatches the uppermost sheet of the stack. An elevator displaces the sheet carrying plate between a sheet feeding position where an upper face of the sheet stack contacts the pickup roller and a separating position where the upper face of the sheet stack is separated from the pickup roller. A first warm air mechanism blows warm air toward a side face of the sheet stack. A controller causes the first warm air mechanism to blow warm air to the side face of the sheet stack and causes the elevator to displace the sheet carrying plate between the sheet feeding position and the separating position. | 02-11-2010 |
| 20110049798 | IMAGE FORMING APPARATUS WITH CASSETTE CONFIGURED TO STORE VARIOUS SIZES OF SHEETS - An image forming apparatus for forming an image on a sheet including: a housing; a cassette detachably accommodated in the housing and configured to store the sheet; a feeding unit configured to feed the sheet; and an image forming unit configured to form the image on the sheet fed by the feeding unit, wherein the cassette includes: a first wall along the trailing edge, a second wall along the leading edge, a first bottom plate extending from the first wall toward the second wall, a second bottom plate extending from the second wall toward the first wall, and a connecting member configured to set a first state where the first and second bottom plates are connected and a second state where the first and second bottom plates are disconnected, and the first and second bottom plates in the second state are independently withdrawable from the housing. | 03-03-2011 |
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| 20080302767 | Plasma Cutting Machine - A plasma cutting machine cuts stainless steel with good quality. An inactive gas (nitrogen) is supplied as a plasma gas, and a combustible gas (propane) having a specific gravity higher than that of air and having a reducing ability or a mixed gas of the combustible gas (propane) and an inactive gas (nitrogen) is supplied as an assist gas to a plasma torch. The combustible gas (propane) contained in the assist gas is not supplied in the pre-flow interval and after-flow interval, and is supplied only in the plasma arc generation interval. | 12-11-2008 |
| 20090126533 | Fume Disposal Process and Fume Disposal System - For collecting fine particles from fume generated in the process of thermal cutting or welding of a metal material and solidifying them, a fume disposal system comprises a fume introducing chamber | 05-21-2009 |
| 20090250445 | Automatic Cutting Device and Production Method for Beveled Product - A plasma cutting device performs cutting in a plurality of stages. In a first cutting sub-process, a manufactured product is cut out from a base material upon a stage according to an NC program. Next, images of respective regions in the vicinities of proper positions at two corner points of the manufactured product which has been cut out are photographed by an image sensor, the actual positions of these two corner points of the manufactured product are detected from these images which have been photographed, and the translation distances and the rotational angle between the actual positions which have been detected and the proper positions are calculated. The NC program is corrected. And, in a subsequent cutting sub-process, additional cutting for beveling is carried out upon cutting surfaces at the outer circumference of the manufactured product, according to the corrected NC program. | 10-08-2009 |
| 20100155373 | PLASMA TORCH, PLASMA TORCH NOZZLE, AND PLASMA-WORKING MACHINE - A plasma torch includes a torch main unit and a nozzle. The torch main unit has a nozzle seat member on which the nozzle is mounted. The nozzle is arranged to move toward or away from the nozzle seat member in a direction substantially parallel to a center axis of the nozzle when the nozzle is mounted on or removed from the nozzle seat member. The nozzle has an electroconductive surface facing the nozzle seat member. The torch main unit has an elastic electric contact portion contacting with the electroconductive surface of the nozzle to form an electroconductive path for a pilot arc to the nozzle. The electroconductive surface of the nozzle presses the electric contact portion in the direction substantially parallel to the center axis when the nozzle is moved toward the nozzle seat member to mount the nozzle on the nozzle seat member. | 06-24-2010 |
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| 20080210297 | Photoelectric Conversion Device and Method for Manufacturing the Same - Disclosed are a method for effectively preventing the contact between the surface of a titanium oxide semiconductor electrode and an electrolyte solution, a photoelectric conversion device exhibiting high photoelectric conversion efficiency, and a dye-sensitized solar cell using the said photoelectric conversion device. The photoelectric conversion device comprising a dye-sensitized semiconductor electrode is manufactured by letting a semiconductor adsorb a sensitizing dye, then rinsing the dye-adsorbed semiconductor, and finally letting the rinsed dye-adsorbed semiconductor adsorb a carboxylic acid in supercritical carbon dioxide. The adsorption of a dye and the rinsing are performed preferably in supercritical carbon dioxide in the presence or absence of an alcohol of 1-4 carbon atoms. | 09-04-2008 |
| 20090314339 | DYE-SENSITIZED SOLAR CELL AND PROCESS FOR PRODUCING THE SAME - A dye-sensitized solar cell is provided, wherein it can be produced by a relatively easy and simple process and ensures high conversion efficiency even in cases where the thickness of the porous semiconductor layer is increased. The dye-sensitized solar cell | 12-24-2009 |
| 20110232743 | DYE-SENSITIZED SOLAR CELL AND MANUFACTURING METHOD FOR THE SAME - To provide a dye-sensitized solar cell capable of significantly improving power extraction efficiency, and a manufacturing method of the dye-sensitized solar cell. The dye-sensitized solar cell includes a substrate, a porous semiconductor layer adsorbing a dye, a conductive metal layer, and a conductive substrate. The conductive metal layer | 09-29-2011 |
| 20120029206 | DYE-SENSITIZED SOLAR CELL, PHOTOELECTRIC CONVERSION ELEMENT, AND DYE FOR USE IN THE SOLAR CELL AND THE ELEMENT - Provided are a squarylium dye having a carboxyindolenine structure and an N-alkyl substituent, and a photoelectric conversion element having high photoelectric conversion efficiency in a near-infrared region and a dye-sensitized solar cell, both of which are produced using the squarylium dye. The photoelectric conversion element or dye-sensitized solar cell uses a compound represented by the formula (1) as the squarylium dye. In the formula (1), R | 02-02-2012 |
