Yoshihiro Yamaguchi
Yoshihiro Yamaguchi, Tokyo JP
Patent application number | Description | Published |
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20090171230 | SYSTEM AND METHOD FOR ANALYZING WAVES OF ELECTROCARDIOGRAM - Electrocardiogram wave data in which a component of cardiac massage is removed from the electrocardiogram wave data is generated, so that the electrocardiogram wave at the time of cardiopulmonary resuscitation is identified. An electrocardiogram wave processing system of obtaining and processing the electrocardiogram wave data includes a wave identification unit that identifies an electrocardiogram wave from the obtained electrocardiogram wave data, a feature selection unit that selects a feature pattern including a feature when a cardiac massage has been performed with respect to the electrocardiogram wave data identified by the wave identification unit, a generation unit that generates a component of the cardiac massage using the feature pattern selected by the feature selection unit, and a removal unit that removes, from the obtained electrocardiogram wave data, the component of the cardiac massage generated by the generation unit. | 07-02-2009 |
20110049531 | POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME - Provided is a power semiconductor device including: an insulating substrate; a circuit pattern formed on an upper surface of the insulating substrate; a power semiconductor formed on the circuit pattern; a plurality of metal socket electrode terminals formed perpendicularly to the circuit pattern or the power semiconductor so as to be in conduction with external terminals; an integral resin sleeve in which a plurality of sleeve parts are integrated, the plurality of sleeve parts being fitted with the plurality of metal socket electrode terminals from above the plurality of metal socket electrode terminals and having openings at both ends thereof; and a molding resin covering the insulating substrate, the circuit pattern, the power semiconductor, the electrode terminals, and the integral resin sleeve. | 03-03-2011 |
20110087727 | INFORMATION PROCESSING SYSTEM, INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD, AND COMPUTER PROGRAM - An information processing system is disclosed. The system includes: a client that executes information display processing; and a server that creates a display structure description file applied in the information display processing, wherein the client acquires image data reference information and transmits display structure description file creating data including the image data reference information to the server, the server creates the display structure description file and transmits the created display structure description file to the client, and the client executes processing for displaying a map on a display unit on the basis of the display structure description file received from the server and acquiring image data from a storage unit within the client on the basis of the image data reference information recorded in the display structure description file and then displaying the acquired image data on the display unit. | 04-14-2011 |
20110134257 | SYSTEM, APPARATUS, METHOD, PROGRAM AND RECORDING MEDIUM FOR PROCESSING IMAGE - An image processing system may include an imaging device for capturing an image and an image processing apparatus for processing the image. The imaging device may include an imaging unit for capturing the image, a first recording unit for recording information relating to the image, the information being associated with the image, and a first transmission control unit for controlling transmission of the image to the image processing apparatus. The image processing apparatus may include a reception control unit for controlling reception of the image transmitted from the imaging device, a feature extracting unit for extracting a feature of the received image, a second recording unit for recording the feature, extracted from the image, the feature being associated with the image, and a second transmission control unit for controlling transmission of the feature to the imaging device. | 06-09-2011 |
20110260315 | POWER BLOCK AND POWER SEMICONDUCTOR MODULE USING SAME - A power block includes an insulating substrate, a conductive pattern formed on the insulating substrate, a power semiconductor chip bonded onto the conductive pattern by lead-free solder, a plurality of electrodes electrically connected to the power semiconductor chip and extending upwardly away from the insulating substrate, and a transfer molding resin covering the conductive pattern, the lead-free solder, the power semiconductor chip, and the plurality of electrodes, wherein surfaces of the plurality of electrodes are exposed at an outer surface of the transfer molding resin and lie in the same plane as the outer surface, the outer surface being located directly above the conductive pattern. | 10-27-2011 |
20120041327 | SYSTEM AND METHOD FOR ANALYZING WAVES OF ELECTROCARDIOGRAM - Electrocardiogram wave data in which a component of cardiac massage is removed from the electrocardiogram wave data is generated, so that the electrocardiogram wave at the time of cardiopulmonary resuscitation is identified. An electrocardiogram wave processing system of obtaining and processing the electrocardiogram wave data includes a wave identification unit that identifies an electrocardiogram wave from the obtained electrocardiogram wave data, a feature selection unit that selects a feature pattern including a feature when a cardiac massage has been performed with respect to the electrocardiogram wave data identified by the wave identification unit, a generation unit that generates a component of the cardiac massage using the feature pattern selected by the feature selection unit, and a removal unit that removes, from the obtained electrocardiogram wave data, the component of the cardiac massage generated by the generation unit. | 02-16-2012 |
20120074516 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device having a plate electrode adapted to a plurality of chips, capable of being produced at low cost, and having high heat cycle property. A semiconductor device according to the present invention includes a plurality of semiconductor chips formed on a substrate, and a plate electrode connecting electrodes of the plurality of semiconductor chips. The plate electrode has half-cut portions formed by half-pressing and the raised sides of the half-cut portions are bonded with the electrodes of the semiconductor chips. | 03-29-2012 |
20120110070 | INFORMATION PROCESSING SYSTEM, INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD, AND COMPUTER PROGRAM - An information processing system is disclosed. The system includes: a client that executes information display processing; and a server that creates a display structure description file applied in the information display processing, wherein the client acquires image data reference information and transmits display structure description file creating data including the image data reference information to the server, the server creates the display structure description file and transmits the created display structure description file to the client, and the client executes processing for displaying a map on a display unit on the basis of the display structure description file received from the server and acquiring image data from a storage unit within the client on the basis of the image data reference information recorded in the display structure description file and then displaying the acquired image data on the display unit. | 05-03-2012 |
20120231586 | POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME - A method of manufacturing includes arranging an integral resin sleeve formed by integrating a plurality of sleeve parts so that the sleeve parts are respectively fitted with a plurality of electrode terminals. There is a press-fitting of the sleeve parts to the electrode terminals by performing mold clamping on molds to apply a force downward on the integral resin sleeve. Further, there is a filling of a molding resin into a hollow cavity of the molds. | 09-13-2012 |
20120313252 | SEMICONDUCTOR DEVICE - A semiconductor device includes a base plate having one main surface joined to an insulating substrate on which a semiconductor chip and the like are mounted and a transfer mold resin which is so provided as to cover the one main surface of the base plate, the insulating substrate, the semiconductor chip, and the like and expose the other main surface of the base plate. The coefficient of linear expansion of the base plate is lower than that of copper and the coefficient of linear expansion of the transfer mold resin is not higher than 16 ppm/° C. The transfer mold resin has such scooped shapes as to expose opposed short-side centers and the vicinity of the base plate, respectively. The base plate has mounting holes in portions exposed by the scooped shapes of the transfer mold resin. | 12-13-2012 |
20130240912 | SEMICONDUCTOR DEVICE - A semiconductor device including: a semiconductor element; a lead frame connected to the semiconductor element; a metal base plate mounted on the lead frame via a first insulation layer; and a second insulation layer disposed on the opposite side of the metal base plate face on which the first insulation layer is disposed; wherein the first insulation layer is an insulation layer whose heat-dissipation performance is higher than that of the second insulation layer, and the second insulation layer is an insulation layer whose insulation performance is the same as that of the first insulation layer or higher than that of the first insulation layer. | 09-19-2013 |
20130243273 | IMAGE PUBLISHING DEVICE, IMAGE PUBLISHING METHOD, IMAGE PUBLISHING SYSTEM, AND PROGRAM - An image publishing device includes an image storage that stores images owned by a user, an image analyzer that performs image analyses on each of the images stored in the image storage, and a publishing/non-publishing decision unit that makes a publishing/non-publishing decision on each of the images based on results of the image analyses made on each of the images. | 09-19-2013 |
20140035123 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor element; a substrate; a metal plate; and a plurality of spherical particles. The substrate has the semiconductor element mounted thereon. The metal plate has one surface and the other surface that face each other, and the substrate is provided on the one surface. The plurality of spherical particles each has a spherical outer shape, and a part of the spherical outer shape is buried in the other surface of the metal plate. With such a configuration, there can be obtained a semiconductor device that allows promotion of heat dissipation from the semiconductor element, and a method for manufacturing the semiconductor device. | 02-06-2014 |
20140217569 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device according to the present invention includes a plurality of semiconductor chips, a plate electrode disposed on the plurality of semiconductor chips for connecting the plurality of semiconductor chips, and an electrode disposed on the plate electrode. The electrode has a plurality of intermittent bonding portions to be bonded to the plate electrode and a protruded portion which is protruded erectly from the bonding portions. The protruded portion has an ultrasonic bonding portion which is parallel with the bonding portion and is ultrasonic bonded to an external electrode. | 08-07-2014 |
20140217600 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The present invention includes a plate electrode to be a plate-shaped electrode member, an epoxy sheet serving as an integrated insulating sheet and provided on the plate electrode, a double printed board serving as a control board and provided on the epoxy sheet, and a board integrated electrode in which the plate electrode and the double printed board are formed integrally by the epoxy sheet. | 08-07-2014 |
20140239468 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device having a plate electrode adapted to a plurality of chips, capable of being produced at low cost, and having high heat cycle property. A semiconductor device according to the present invention includes a plurality of semiconductor chips formed on a substrate, and a plate electrode connecting electrodes of the plurality of semiconductor chips. The plate electrode has half-cut portions formed by half-pressing and the raised sides of the half-cut portions are bonded with the electrodes of the semiconductor chips. | 08-28-2014 |
20150091406 | PERMANENT MAGNET MOTOR - A permanent magnet motor includes a P-pole-implanted permanent magnet rotator containing a ferrite magnet in a laminated silicon steel sheet, wherein, at one pole, a U-shaped permanent magnet comprising three parts, and, at the outer periphery of the U-shaped magnet, one outer-periphery permanent magnet disposed longitudinally in the peripheral direction are provided to generate permanent magnet torque. At one pole, the permanent magnet rotator generates reluctance torque using two salient poles formed between the U-shaped permanent magnet and the outer-periphery permanent magnet. One central salient pole is formed between the adjacent poles. A stator comprises an M-phase stator winding that is a distributed winding, and a stator core having Ns slots. The ratio of Ns/P/M is a common fraction. When the width of the center salient pole is set to τcp and the slot pitch of the stator core is set to τs, τcp is smaller than τs. | 04-02-2015 |
20150092997 | PERSON RECOGNITION APPARATUS, PERSON RECOGNITION METHOD, AND NON-TRANSITORY COMPUTER READABLE RECORDING MEDIUM - There are provided a person recognition apparatus, method, and a non-transitory computer readable recording medium which can perform accurate person recognition according to a time dependent face change. A sorting section sorts a plurality of images by shooting date and time. A group division section divides the plurality of images into a plurality of groups according to a predetermined shooting date and time range. A face recognition section extracts feature amounts by face recognition for each group. An in-group person determination section determines a person having a similarity of a predetermined reference threshold value or higher as the same person and integrates the feature amounts relevant to the person for each group. An inter-group person recognition section recognizes persons having a similarity of a predetermined recognition threshold value or higher as the same person between two groups based on the feature amounts integrated in adjacent groups. | 04-02-2015 |
Yoshihiro Yamaguchi, Saitama-Ken JP
Patent application number | Description | Published |
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20080283909 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device includes a second-conductivity-type base region provided on a first-conductivity-type semiconductor layer, a first-conductivity-type source region provided on the second-conductivity-type base region, a gate insulating film covering an inner wall of a trench which passes through the second-conductivity-type base region and reaching the first-conductivity-type semiconductor layer, a gate electrode buried in the trench via the gate insulating film, and a second-conductivity-type region being adjacent to the second-conductivity-type base region below the first-conductivity-type source region, spaced from the gate insulating film, and having a higher impurity concentration than the second-conductivity-type base region. c≧d is satisfied, where d is a depth from an upper surface of the first-conductivity-type source region to a lower end of the gate electrode, and c is a depth from an upper surface of the first-conductivity-type source region to a lower surface of the second-conductivity-type base region. | 11-20-2008 |
20090127616 | POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A vertical power semiconductor device includes a first semiconductor layer of a first conductivity type formed in both a cell section and a termination section, the termination section surrounding the cell section, a second semiconductor layer of a second conductivity type formed on the first semiconductor layer in the cell section, a third semiconductor layer of the first conductivity type formed in part on the second semiconductor layer, and a guard ring layer of the second conductivity type formed on the first semiconductor layer in the termination section. Net impurity concentration in the guard ring layer is generally sloped so as to be relatively high on its lower side and relatively low on its upper side. Alternatively, the net impurity concentration in the guard ring layer is constant. | 05-21-2009 |
20090146209 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of the first conductivity type provided on a main surface of the first semiconductor layer and having a lower impurity concentration than that of the first semiconductor layer; a third semiconductor layer of a second conductivity type provided on the second semiconductor layer; a fourth semiconductor layer of the first conductivity type selectively provided on the third semiconductor layer; a gate electrode provided in a trench passing through the third semiconductor layer and reaching the second semiconductor layer; a first main electrode contacting the fourth semiconductor layer and contacting the third semiconductor layer through a contact groove provided to pass through the fourth semiconductor layer between the contiguous gate electrodes; a second main electrode provided on an opposite surface to the main surface of the first semiconductor layer; and a fifth semiconductor layer of the second conductivity type provided in an interior portion of the second semiconductor layer corresponding to a part under the contact groove. An uppermost portion of the fifth semiconductor layer contacts the third semiconductor layer, a lowermost portion of the fifth semiconductor layer has a higher impurity concentration than that of the other portion in the fifth semiconductor layer and is located in the second semiconductor layer and not contacting the first semiconductor layer, and the fifth semiconductor layer is narrower from the uppermost portion to the lower most portion. | 06-11-2009 |
20090184352 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device includes: a semiconductor substrate; a lateral MOSFET formed in an upper portion of a first region of the semiconductor substrate; a vertical MOSFET formed in a second region of the semiconductor substrate; a backside electrode formed on a lower surface of the semiconductor substrate and connected to a lower region of source/drain regions of the vertical MOSFET; and a connecting member penetrating the semiconductor substrate and connecting one of source/drain regions of the lateral MOSFET to the backside electrode. | 07-23-2009 |
20090242977 | SEMICONDUCTOR DEVICE AND DC-DC CONVERTER - A semiconductor device includes: a semiconductor substrate of a first conductivity type; a semiconductor region provided in the semiconductor substrate; a first trench formed in the semiconductor region; a second trench formed in the semiconductor substrate; a trench gate electrode provided in the first trench; and a trench source electrode provided in the second trench. The trench source electrode is shaped like a stripe and connected to the source electrode through its longitudinal portion. | 10-01-2009 |
20100013010 | POWER SEMICONDUCTOR DEVICE - An impurity concentration profile in a vertical direction of a p type base contact layer of a power semiconductor device has a two-stage configuration. In other word, the impurity concentration profile is highest at an upper face of the p type base contact layer, has a local minimum value at a position other than the upper face and a lower face of the base contact layer, and has a local maximum value at a position lower than the position of the local minimum value. | 01-21-2010 |
20110059586 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of the first conductivity type provided on a main surface of the first semiconductor layer and having a lower impurity concentration than that of the first semiconductor layer; a third semiconductor layer of a second conductivity type provided on the second semiconductor layer; a fourth semiconductor layer of the first conductivity type selectively provided on the third semiconductor layer; a gate electrode provided in a trench passing through the third semiconductor layer and reaching the second semiconductor layer; a first main electrode contacting the fourth semiconductor layer and contacting the third semiconductor layer through a contact groove provided to pass through the fourth semiconductor layer between the contiguous gate electrodes; a second main electrode provided on an opposite surface to the main surface of the first semiconductor layer; and a fifth semiconductor layer of the second conductivity type provided in an interior portion of the second semiconductor layer corresponding to a part under the contact groove. An uppermost portion of the fifth semiconductor layer contacts the third semiconductor layer, a lowermost portion of the fifth semiconductor layer has a higher impurity concentration than that of the other portion in the fifth semiconductor layer and is located in the second semiconductor layer and not contacting the first semiconductor layer, and the fifth semiconductor layer is narrower from the uppermost portion to the lower most portion. | 03-10-2011 |
20120086073 | POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A vertical power semiconductor device includes a first semiconductor layer of a first conductivity type formed in both a cell section and a termination section, the termination section surrounding the cell section, a second semiconductor layer of a second conductivity type formed on the first semiconductor layer in the cell section, a third semiconductor layer of the first conductivity type formed in part on the second semiconductor layer, and a guard ring layer of the second conductivity type formed on the first semiconductor layer in the termination section. Net impurity concentration in the guard ring layer is generally sloped so as to be relatively high on its lower side and relatively low on its upper side. Alternatively, the net impurity concentration in the guard ring layer is constant. | 04-12-2012 |
Yoshihiro Yamaguchi, Osaka-Shi JP
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20090001657 | SHEET-FEEDING DEVICE AND IMAGE FORMING APPARATUS PROVIDED WITH THE SAME - A sheet-feeding device includes a sheet-feeding cassette with a sheet holding surface for holding a sheet. A side wall extends up from the sheet holding surface. A sheet-restricting plate is in the cassette on a downstream side in the sheet-feeding direction for setting a position of the sheet in a width direction perpendicular to the sheet-feeding direction. A cassette accommodating section accommodates the sheet-feeding cassette drawably in a direction parallel to the sheet-feeding direction. A projection is on an upstream side in the sheet-feeding direction from the position of the sheet-restricting plate. The projection is formed by partially projecting the side wall of the cassette upward. A height of the projection exceeds a maximum height of a sheet stack that can be accommodated in the cassette, and a height of parts of the side wall other than the projection is lower than the maximum height of the sheet stack. | 01-01-2009 |
20090014945 | SHEET-FEEDING MECHANISM, SHEET-FEEDING DEVICE, AND IMAGE FORMING APPARATUS - An object of the present invention is to improve separability with respect to other sheet without damaging sheets in a sheet-feeding mechanism used in an image forming apparatus. For the purpose of accomplishing the object, the sheet-feeding mechanism includes: a feeding roller ( | 01-15-2009 |
20100001454 | SHEET FEEDING DEVICE AND IMAGE FORMING APPARATUS INCLUDING SHEET FEEDING DEVICE - A sheet feeding device for feeding a sheet-form recording medium includes: a sheet accommodating portion for accommodating a sheet stack constituted by a plurality of sheets of the sheet-form recording medium; and a first warm air unit having a first blowing port for blowing warm air toward an upper face of the sheet stack accommodated in the sheet accommodating portion. The sheet feeding device preferably further includes a second warm air unit having a second blowing port for blowing warm air onto a side face of the sheet stack that is parallel to a sheet feeding direction. | 01-07-2010 |
20100032890 | SHEET FEEDING DEVICE AND IMAGE FORMING APPARATUS INCLUDING SHEET FEEDING DEVICE - A sheet feeding device has a sheet accommodating portion for accommodating a sheet stack, a sheet carrying plate for carrying the sheet stack and a pickup roller that dispatches the uppermost sheet of the stack. An elevator displaces the sheet carrying plate between a sheet feeding position where an upper face of the sheet stack contacts the pickup roller and a separating position where the upper face of the sheet stack is separated from the pickup roller. A first warm air mechanism blows warm air toward a side face of the sheet stack. A controller causes the first warm air mechanism to blow warm air to the side face of the sheet stack and causes the elevator to displace the sheet carrying plate between the sheet feeding position and the separating position. | 02-11-2010 |
20110049798 | IMAGE FORMING APPARATUS WITH CASSETTE CONFIGURED TO STORE VARIOUS SIZES OF SHEETS - An image forming apparatus for forming an image on a sheet including: a housing; a cassette detachably accommodated in the housing and configured to store the sheet; a feeding unit configured to feed the sheet; and an image forming unit configured to form the image on the sheet fed by the feeding unit, wherein the cassette includes: a first wall along the trailing edge, a second wall along the leading edge, a first bottom plate extending from the first wall toward the second wall, a second bottom plate extending from the second wall toward the first wall, and a connecting member configured to set a first state where the first and second bottom plates are connected and a second state where the first and second bottom plates are disconnected, and the first and second bottom plates in the second state are independently withdrawable from the housing. | 03-03-2011 |
Yoshihiro Yamaguchi, Ishikawa JP
Patent application number | Description | Published |
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20080302767 | Plasma Cutting Machine - A plasma cutting machine cuts stainless steel with good quality. An inactive gas (nitrogen) is supplied as a plasma gas, and a combustible gas (propane) having a specific gravity higher than that of air and having a reducing ability or a mixed gas of the combustible gas (propane) and an inactive gas (nitrogen) is supplied as an assist gas to a plasma torch. The combustible gas (propane) contained in the assist gas is not supplied in the pre-flow interval and after-flow interval, and is supplied only in the plasma arc generation interval. | 12-11-2008 |
20090126533 | Fume Disposal Process and Fume Disposal System - For collecting fine particles from fume generated in the process of thermal cutting or welding of a metal material and solidifying them, a fume disposal system comprises a fume introducing chamber | 05-21-2009 |
20090250445 | Automatic Cutting Device and Production Method for Beveled Product - A plasma cutting device performs cutting in a plurality of stages. In a first cutting sub-process, a manufactured product is cut out from a base material upon a stage according to an NC program. Next, images of respective regions in the vicinities of proper positions at two corner points of the manufactured product which has been cut out are photographed by an image sensor, the actual positions of these two corner points of the manufactured product are detected from these images which have been photographed, and the translation distances and the rotational angle between the actual positions which have been detected and the proper positions are calculated. The NC program is corrected. And, in a subsequent cutting sub-process, additional cutting for beveling is carried out upon cutting surfaces at the outer circumference of the manufactured product, according to the corrected NC program. | 10-08-2009 |
20100155373 | PLASMA TORCH, PLASMA TORCH NOZZLE, AND PLASMA-WORKING MACHINE - A plasma torch includes a torch main unit and a nozzle. The torch main unit has a nozzle seat member on which the nozzle is mounted. The nozzle is arranged to move toward or away from the nozzle seat member in a direction substantially parallel to a center axis of the nozzle when the nozzle is mounted on or removed from the nozzle seat member. The nozzle has an electroconductive surface facing the nozzle seat member. The torch main unit has an elastic electric contact portion contacting with the electroconductive surface of the nozzle to form an electroconductive path for a pilot arc to the nozzle. The electroconductive surface of the nozzle presses the electric contact portion in the direction substantially parallel to the center axis when the nozzle is moved toward the nozzle seat member to mount the nozzle on the nozzle seat member. | 06-24-2010 |
Yoshihiro Yamaguchi, Fukuoka JP
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20080210297 | Photoelectric Conversion Device and Method for Manufacturing the Same - Disclosed are a method for effectively preventing the contact between the surface of a titanium oxide semiconductor electrode and an electrolyte solution, a photoelectric conversion device exhibiting high photoelectric conversion efficiency, and a dye-sensitized solar cell using the said photoelectric conversion device. The photoelectric conversion device comprising a dye-sensitized semiconductor electrode is manufactured by letting a semiconductor adsorb a sensitizing dye, then rinsing the dye-adsorbed semiconductor, and finally letting the rinsed dye-adsorbed semiconductor adsorb a carboxylic acid in supercritical carbon dioxide. The adsorption of a dye and the rinsing are performed preferably in supercritical carbon dioxide in the presence or absence of an alcohol of 1-4 carbon atoms. | 09-04-2008 |
20090314339 | DYE-SENSITIZED SOLAR CELL AND PROCESS FOR PRODUCING THE SAME - A dye-sensitized solar cell is provided, wherein it can be produced by a relatively easy and simple process and ensures high conversion efficiency even in cases where the thickness of the porous semiconductor layer is increased. The dye-sensitized solar cell | 12-24-2009 |
20110232743 | DYE-SENSITIZED SOLAR CELL AND MANUFACTURING METHOD FOR THE SAME - To provide a dye-sensitized solar cell capable of significantly improving power extraction efficiency, and a manufacturing method of the dye-sensitized solar cell. The dye-sensitized solar cell includes a substrate, a porous semiconductor layer adsorbing a dye, a conductive metal layer, and a conductive substrate. The conductive metal layer | 09-29-2011 |
20120029206 | DYE-SENSITIZED SOLAR CELL, PHOTOELECTRIC CONVERSION ELEMENT, AND DYE FOR USE IN THE SOLAR CELL AND THE ELEMENT - Provided are a squarylium dye having a carboxyindolenine structure and an N-alkyl substituent, and a photoelectric conversion element having high photoelectric conversion efficiency in a near-infrared region and a dye-sensitized solar cell, both of which are produced using the squarylium dye. The photoelectric conversion element or dye-sensitized solar cell uses a compound represented by the formula (1) as the squarylium dye. In the formula (1), R | 02-02-2012 |
Yoshihiro Yamaguchi, Ishilawa JP
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20090183612 | Cutting Machine and Method for Controlling Head Moving Device of Same - A cutting machine secures safety of a worker during movement of a head without lowering production efficiency. When moving a cutting head without cutting material to be cut upon a table, a moving truck and the cutting head are moved at a higher speed as compared with when cutting the material to be cut. If, when the moving truck and the cutting head are moving at high speed, a worker who is present upon the table intercepts either of light beams which are located in front of and behind a horizontal beam, then this movement speed is decelerated to a safe low speed, but the task of cutting the material is not interrupted. Subsequently, when the worker approaches the horizontal beam closer, and contacts a wire or a bar in the vicinity of the horizontal beam, movement of the moving truck and the cutting head is forcibly stopped. | 07-23-2009 |
Yoshihiro Yamaguchi, Kaga-Shi JP
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20080314875 | THERMAL CUTTER - A thermal cutter for cutting with heat a board mounted upon a table having an internal space includes a plurality of walls and a sound absorbent material. The walls are disposed in the internal space of the table to partition a plurality of exhaust chambers with each of the exhaust chambers having an aperture that opens towards a side on which the board is mounted. The sound absorbent material is provided to at least a portion of at least one of the walls, the sound absorbent material being removably coupled to the table. | 12-25-2008 |
20140353294 | PLASMA CUTTING METHOD AND PLASMA CUTTING DEVICE - A plurality of cutout members are cut out from a plate blank by a plasma arc generated from a plasma torch by a method including a piercing step and a cutting step. In the piercing step, an aperture is formed on an outer peripheral side of a cutout member by maintaining the plasma torch at a first height from the plate blank on the outer peripheral side of the cutout member while the plasma arc is generated from the plasma torch and by moving the plasma torch relative to the plate blank in a horizontal direction. In the cutting step, a continuous cutting groove is formed along an outer contour of the cutout member by setting the plasma torch at a second height lower than the first height and by moving the plasma torch in the horizontal direction along an incision part and a processing line continuing to the incision part. | 12-04-2014 |
20150027999 | COMBINED MACHINING METHOD AND COMBINED MACHINING DEVICE - A method of cutting a cut member out of an original sheet by means of thermal cutting and machining, and includes a hole-cutting process, a finishing process, and an outer periphery-cutting process. During the hole-cutting process, a hole is created in the original sheet by means of thermal cutting while leaving a machining allowance in addition to the finished size of the hole. During the finishing process, a cutting tool is inserted into the hole which has been created through the hole-cutting process, and the cutting tool is guided along the inner circumference of the hole so as to cut the thermally-cut end surface in order to machine the hole to the finished size. During the outer periphery-cutting process, the outer periphery of the cut member is cut by means of thermal cutting to take the cut member out of the original sheet. | 01-29-2015 |
Yoshihiro Yamaguchi, Saitama-Shi JP
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20080299725 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES - A method of manufacturing semiconductor devices comprises forming an semiconductor layer of the first conduction type on a substrate of the first conduction type; forming an anti-oxidizing layer on the surface of the semiconductor layer of the first conduction type, the anti-oxidizing layer having an aperture only through a region for use in formation of a guard ring layer of the second conduction type; forming the guard ring layer of the second conduction type in the surface of the semiconductor layer of the first conduction type through implantation of ions into a surface where said anti-oxidizing layer is formed; forming an oxide layer at least in the aperture; forming a base layer of the second conduction type adjacent to the guard ring layer of the second conduction type in the surface of the semiconductor layer of the first conduction type; and forming a diffused layer of the first conduction type through implantation of ions into the base layer of the second conduction type. | 12-04-2008 |
Yoshihiro Yamaguchi, Saitama JP
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20080251838 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor substrate, at least a surface portion thereof serving as a low-resistance drain layer of a first conductivity type; a first main electrode connected to the low-resistance drain layer; a high-resistance epitaxial layer of a second-conductivity type formed on the low-resistance drain layer; a second-conductivity type base layer selectively formed on the high-resistance epitaxial layer; a first-conductivity type source layer selectively formed in a surface portion of the second-conductivity type base layer; a trench formed in a region sandwiched by the second-conductivity type base layers with a depth extending from the surface of the high-resistance epitaxial layer to the semiconductor substrate; a jfet layer of the first conductivity type formed on side walls of the trench; an insulating layer formed in the trench; an LDD layer of the first-conductivity type formed in a surface portion of the second-conductivity type base layer so as to be connected to the first-conductivity type jfet layer around a top face of the trench; a control electrode formed above the semiconductor substrate so as to be divided into a plurality of parts, and formed on a gate insulating film formed on a part of the surface of the LDD layer, on surfaces of end parts of the first-conductivity type source layer facing each other across the trench, and on a region of the surface of the second-conductivity type base layer sandwiched by the LDD layer and the first-conductivity type source layer; and a second main electrode in ohmic contact with the first-conductivity type source layer and the second-conductivity type base layer so as to sandwich the control electrode. | 10-16-2008 |
Yoshihiro Yamaguchi, Matsumoto-Shi JP
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20080200558 | Inhibitory or blocking agents of molecular generating and/or/ inducing functions - A method for inhibiting or blocking molecular generating and/or inducing functions of molecules using an inhibitory or blocking agent of the formula: | 08-21-2008 |
Yoshihiro Yamaguchi, Nagaokakyo-Shi JP
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20110199744 | CIRCUIT MODULE - A circuit module includes a substrate, a component land provided on the substrate, an electronic component bonded to the component land, a case land provided on the substrate, and a case bonded to the case land so as to cover the electronic component. The case includes a top plate, and a leg that extends from a peripheral edge of the top plate in a direction substantially perpendicular to the top plate and that includes a groove in an end surface thereof that is bonded to the case land. | 08-18-2011 |
Yoshihiro Yamaguchi, Somerset, NJ US
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20110217282 | Novel Toxin-Antitoxin System - Disclosed in certain embodiments is a method of inhibiting cell function comprising inducing the expression of a mRNA interferase that cleaves mRNA at GCU. | 09-08-2011 |
20140294801 | SEQUENCE-SPECIFIC MRNA INTERFERASE AND USES THEREOF - The present invention provides an improved and specific mRNA interferase and related methods of protein-based mRNA interference. | 10-02-2014 |
20140319415 | METHODS OF INCORPORATING AMINO ACID ANALOGUES INTO A PROTEIN - The present invention provides a novel use of a SPP system for replacing natural amino acid residues with non-naturally occurring amino acids in a protein or peptide, using cell based expression system. | 10-30-2014 |
20140369988 | Novel Toxin-Antitoxin System - Disclosed in certain embodiments is a method of inhibiting cell function comprising inducing the expression of a mRNA interferase that cleaves mRNA at GCU. | 12-18-2014 |
Yoshihiro Yamaguchi, Chiyoda-Ku JP
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20110266686 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a substrate having a conductor; a semiconductor chip disposed on the substrate and electrically connected to the conductor; a tubular electrode having one end electrically connected to the conductor; and a sealing resin sealing the substrate, the semiconductor chip and the electrode. The electrode is configured to be extendable and contractible in the stacking direction in which the substrate and the semiconductor chip are stacked in the state before sealing of the sealing resin. The edge of the other end of the electrode is exposed from the sealing resin. The electrode has a hollow space opened at the edge of the other end. Therefore, a semiconductor device reduced in size and a method of manufacturing this semiconductor device can be provided. | 11-03-2011 |
Yoshihiro Yamaguchi, Kitakyushu-Shi JP
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20110315203 | DYE-SENSITIZED SOLAR CELL - There is provided a tandem-type dye-sensitized solar cell having a novel structure whereby optical absorption efficiency is improved and which can be manufactured at low cost. | 12-29-2011 |
20110315212 | DYE-SENSITIZED SOLAR CELL, AND METHOD FOR MANUFACTURING THE SAME - There are provided a dye-sensitized solar cell easy to manufacture, high in power extraction efficiency, and suitable for upsizing, and a method for manufacturing the dye-sensitized solar cell. The dye-sensitized solar cell | 12-29-2011 |
20130118560 | SEALING STRUCTURE FOR PHOTOELECTRIC CONVERSION ELEMENT, PHOTOELECTRIC CONVERSION ELEMENT, AND PHOTOELECTRIC CONVERSION ELEMENT MODULE - Provided is a sealing structure of a photoelectric conversion element in which the open side end section of the photoelectric conversion element can be surely and continuously sealed by a simple structure with high durability, and also the problem of insufficient sealing of the extraction electrode can be solved. A sealing structure | 05-16-2013 |
20140182669 | DYE-SENSITIZED SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - To provide a dye-sensitized solar cell with suppressed photoelectric conversion efficiency deterioration due to a gap to be possibly be generated between a transparent member on which a light is incident and the dye-sensitized solar cell components. | 07-03-2014 |
Yoshihiro Yamaguchi, Kltakyushu-Shi JP
Patent application number | Description | Published |
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20120055549 | DYE-SENSITIZED SOLAR CELL - There is provided a dye-sensitized solar cell high in power generation efficiency. | 03-08-2012 |
Yoshihiro Yamaguchi, Kitakyusyu-Shi JP
Patent application number | Description | Published |
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20120073643 | DYE-SENSITIZED SOLAR CELL AND PROCESS FOR MANUFACTURING THE SAME - A dye-sensitized solar cell is provided, wherein it can be produced by a relatively easy and simple process and ensures high conversion efficiency even in cases where the thickness of the porous semiconductor layer is increased. The dye-sensitized solar cell | 03-29-2012 |
20120305073 | DYE-SENSITIZED SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - Provided is a dye-sensitized solar cell, and a method for manufacturing the same, that in a technology in which a current collector electrode is used instead of a transparent conductive film, can be manufactured by a simple cell producing operation and is capable of achieving a desirably thin thickness for the current collector electrode. A dye-sensitized solar cell | 12-06-2012 |
20140116503 | DYE-SENSITIZED SOLAR CELL AND PROCESS FOR MANUFACTURING THE SAME - A dye-sensitized solar cell is provided, wherein it can be produced by a relatively easy and simple process and ensures high conversion efficiency even in cases where the thickness of the porous semiconductor layer is increased. The dye-sensitized solar cell | 05-01-2014 |
Yoshihiro Yamaguchi, Osaka JP
Patent application number | Description | Published |
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20120205860 | SHEET STORAGE APPARATUS AND IMAGE FORMING APPARATUS - A sheet storage apparatus | 08-16-2012 |
20120205861 | SHEET STORAGE DEVICE - When a sheet cassette ( | 08-16-2012 |
20140284868 | SHEET CONVEYING APPARATUS, AND SHEET PROCESSING APPARATUS AND IMAGE FORMING APPARATUS PROVIDED WITH THE SAME - A sheet conveying apparatus according to one aspect of the present disclosure includes a housing, a sheet storage portion, a sheet conveying path, and a guide member. Housing is mounted to apparatus body that includes bottom portion having opening portion, and main sheet conveying path extending upward from opening portion to convey sheets, and includes top face portion arranged opposing bottom portion. Sheet conveying path extends from sheet storage portion to top face portion, and is configured to be capable of communicating with main sheet conveying path. Sheets are conveyed on sheet conveying path. Guide member is pivotably supported by housing, and is configured to be capable of changing its position between a first position where guide member follows along top face portion and a second position where guide member projects upward from top face portion to guide sheet toward main sheet conveying path from sheet conveying path. | 09-25-2014 |
Yoshihiro Yamaguchi, Sagamihara-Shi JP
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20140028230 | MOTOR EXCITING DEVICE AND MOTOR EXCITING METHOD AND MOTOR CONTROL DEVICE AND MOTOR CONTROL METHOD - A motor control device which can determine a magnetic pole position for a magnetic pole position detector included in a permanent magnet motor in which the reluctance torque proportion is larger than the magnet torque proportion is provided. In a permanent magnet synchronous motor having multi-phase windings of N axes (N≧2), the windings of optionally selected K axes (K≦N) are DC excited using corresponding independent power supplies. | 01-30-2014 |
Yoshihiro Yamaguchi, Inagi-Shi JP
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20130204452 | INFORMATION COMMUNICATION DEVICE AND INFORMATION COMMUNICATION METHOD - An information communication device is provided with a monitoring unit, a communication unit, a storage, a switching unit, an acquisition unit, a creation unit, and a transmission unit. In the event that the monitoring unit detects trouble in the basic network, the switching unit switches the communication function of the communication unit from a first communication function to a second communication function. In the event that the monitoring unit detects trouble in the basic network, the creation unit creates notification information about the trouble in the basic network. The transmission unit transmits the created notification information via the switched-to communication function to a contact retrieved from the storage. | 08-08-2013 |
Yoshihiro Yamaguchi, Toyota-Shi JP
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20140184375 | REACTOR - A reactor includes a core body having a U-shape block core and an I-shape block core arranged with a gap, a coil wound on an outer circumference of the core body, and a gap plate inserted into the gap between the U-shape block core and I-shape block core. The gap plate includes a coil retaining member extending towards and retaining the coil. By such a configuration, a reactor having temperature increase at the coil suppressed can be provided. | 07-03-2014 |
Yoshihiro Yamaguchi, Wako-Shi JP
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20150054302 | APPARATUS FOR REDUCING VEHICLE AERODYNAMIC DRAG - In an apparatus for reducing vehicle aerodynamic drag equipped with an air jet device installed at upper and lower positions of a rear of a vehicle and each having a vibrator connected to a diaphragm disposed in an enclosed region and adapted to be driven based on a drive signal to vibrate the diaphragm to jet/suck air through an orifice formed in the region, a vehicle traveling condition is detected, the drive signals for the respective air jet devices are determined independently of each other based on the detected traveling condition, and the vibrators of the respective air jet devices are driven based on the determined drive signals to reduce aerodynamic drag acting on the vehicle. | 02-26-2015 |
Yoshihiro Yamaguchi, Sagamihara JP
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20150108865 | COMPOSITE TORQUE ROTATING ELECTRIC MACHINE - A composite torque rotating electric machine includes a stator having armature windings arranged at multiple positions in a circumferential direction, a rotor having a cylindrical core, first permanent magnets arranged on axes (d) and in the circumferential direction on the outer periphery of the rotor, second permanent magnets arranged on axes (d) on the inner periphery side of the rotor across from the permanent magnets on the outer circumference side, third permanent magnets on axes (q) and extending in the longitudinally and radially of the rotor, and air gaps on the outer periphery side of the third permanent magnets and intermediate in the circumferential direction of the first permanent magnets. The radial distance between the first and second magnets is greater than the circumferential distance between the first permanent magnets and the air gaps. A rectifier having multiple slits is disposed between the first permanent magnets and the air gaps. | 04-23-2015 |