Patent application number | Description | Published |
20080278261 | MILLIMETER-BAND SWITCHING CIRCUIT - A millimeter-band switching circuit easily corrects a varied off capacitance of a switching element without shifting position of the switching element. The millimeter-band switching circuit includes: a coupling line having a line length that can be changed; a first input and output terminal; a second input and output terminal; a first transmission line connected between the first input and output terminal and a first end of the coupling line; a second transmission line connected between the input and output terminal and a second end of the coupling line; a first field effect transistor (FET) connected in parallel with the first transmission line; and a second FET connected in parallel with the second transmission line and turned ON/OFF simultaneously with turning ON/OFF of the first FET. | 11-13-2008 |
20090256646 | MILLIMETER WAVEBAND SWITCH - A millimeter waveband switch which enables high isolation without increasing passing loss, includes a first switching element that is connected in series between input and output terminals through which a signal passes; and a first transmission line having an electrical length of ½ wavelength and which is connected in parallel with the first switching element. Alternatively, the millimeter waveband switch may include: a first switching element having a first end connected in parallel to input and output terminals through which a signal passes; a first transmission line having an electrical length of ½ wavelength which is connected in parallel with the first switching element; and a second transmission line having an electrical length of ½ wavelength and which is connected between ground and a second end of the first switching element. | 10-15-2009 |
20100052799 | VOLTAGE CONTROLLED OSCILLATOR, MMIC, AND HIGH FREQUENCY WIRELESS DEVICE - A voltage controlled oscillator having low phase noise and including: a variable resonator including a varactor and a control voltage terminal; and an open-end stub connected in parallel to the variable resonator, the open-end stub having a length shorter than or equal to an odd multiple of one quarter of a wavelength of a harmonic signal plus one sixteenth of the wavelength of the harmonic signal, and longer than or equal to an odd multiple of one quarter of the wavelength of the harmonic signal minus one sixteenth of the wavelength of the harmonic signal. In this structure, a high Q value is realized for a fundamental wave frequency. Fluctuation in a control voltage due to a harmonic signal is controlled. | 03-04-2010 |
20100225376 | SEMICONDUCTOR SWITCH, SEMICONDUCTOR SWITCH MMIC, CHANGEOVER SWITCH RF MODULE, POWER RESISTANCE SWITCH RF MODULE, AND TRANSMITTER AND RECEIVER MODULE - A semiconductor switch for switching a signal according to input power and maintaining performance of a receiver system with a simple configuration. The semiconductor switch comprises: a first FET connected between a first input/output terminal and a second input/output terminal; a first transmission line connected between the first input/output terminal and a third input/output terminal; a second transmission line parallel to the first transmission line; and a detector circuit connected to one end of the second transmission line, for outputting a DC voltage corresponding to power level of the high frequency signal, branched by the second transmission line. The first FET is controlled and switched according to an output from the detector circuit to switch between a route from the first input/output terminal to the second input/output terminal and a route from the first input/output terminal to the third input/output terminal. | 09-09-2010 |
20110175686 | HIGH FREQUENCY SECOND HARMONIC OSCILLATOR - A high frequency second harmonic oscillator includes a transistor, a first signal line connected at a first end to the base or gate of the transistor, a first shunt capacitor connected at a first end to a second end of the first signal line and at a second end to ground, a second signal line connected at a first end to the collector or drain of the transistor, a second shunt capacitor connected at a first end to a second end of the second signal line and at a second end to ground, and a high capacitance capacitor connected between the first signal line and the second signal line. The first signal line has a length equal to an odd integer multiple of one quarter of the wavelength of a fundamental signal, plus or minus one-sixteenth of the wavelength of the fundamental signal. | 07-21-2011 |
20110234333 | SEMICONDUCTOR SWITCH, TRANSCEIVER, TRANSMITTER, AND RECEIVER - A semiconductor switch includes a main line, branch lines branching from the main line at the same branch point, switching devices shunt-connected between one of the branch lines and ground and operated so that the one of the branch lines is connected to and disconnected from ground, a main terminal connected to an end of the main line, and branch terminals connected to an end of one of the branch lines. The impedance of one of the branch lines, as seen from the branch point, is conjugately matched to the combined impedance of the main line and the rest of the branch lines, as seen from the branch point, the one of the branch lines transmitting an RF signal, and the rest of the branch lines blocking the RF signal. | 09-29-2011 |
20120025366 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor device comprises: forming a circuit pattern and a first metal film on a first major surface of a body wafer; forming a through-hole penetrating the body wafer from a second major surface of the body wafer and reaching the first metal film; forming a second metal film on a part of the second major surface of the body wafer, on an inner wall of the through-hole, and on the first metal film exposed in the through-hole; forming a recess on a first major surface of a lid wafer; forming a third metal film on the first major surface of the lid wafer including inside the recess of the lid wafer; with the recess facing the circuit pattern, and the first metal film contacting the third metal film, joining the lid wafer to the body wafer; and dicing the joined body wafer and lid wafer along the through-hole. | 02-02-2012 |
20120094481 | METHOD OF MANUFACTURING AIRBRIDGE - In making an airbridge structure, a second resist layer is applied over a first resist layer. The resist layers are exposed and developed to have a predetermined width W | 04-19-2012 |
20120133436 | POWER AMPLIFIER AND MMIC USING THE SAME - A power amplifier includes an input terminal, an input matching circuit connected to the input terminal, an amplifying transistor having a gate connected to the input matching circuit, an output matching circuit connected to the drain of the amplifying transistor, an output terminal connected to the output matching circuit, and an inverting differentiator circuit for either inverting and then differentiating, or differentiating and then inverting, a signal from the input terminal. The output of the inverting differentiator circuit is connected to the gate. | 05-31-2012 |
20120299178 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a main body chip; a circuit pattern on a front surface of the main body chip and including a first pad; a cap chip including a first recess in a front surface of the cap chip and a second recess in a back surface of the cap chip, the cap chip being joined to the main body chip with the first recess facing the circuit pattern; a second pad on a bottom surface of the first recess of the cap chip; a first metallic member inlaid in the second recess of the cap chip; a first through electrode electrically connecting the second pad to the first metallic member through the cap chip; and a bump electrically connecting the first pad to the second pad. | 11-29-2012 |
20130032817 | POWER AMPLIFIER - A power amplifier includes a semiconductor substrate including transistor cells, a drain electrode for the transistor cells located on the semiconductor substrate, a drain pad located on the semiconductor substrate and connected to the drain electrode, an ion-implanted resistance located in the semiconductor substrate and extending along and in contact with the drain pad, a floating electrode located on the semiconductor substrate and in contact with the ion-implanted resistance, and an output matching circuit located outside the semiconductor substrate. The power amplifier further includes a wire connecting the drain pad to the output matching circuit. | 02-07-2013 |
20130169346 | SWITCH CIRCUIT - A switch circuit includes: first, second, and third input-output terminals; a first switching element connected between the first and second input-output terminals; a second switching element connected between the third input-output terminal and a grounding point; a third switching element connected between the first and third input-output terminals; a fourth switching element connected between the second input-output terminal and the grounding point; a first control voltage applying terminal connected to control terminals of the first and second switching elements; a second control voltage applying terminal connected to control terminals of the third and fourth switching elements; first and second resistors connected between the control terminals of the first and second switching elements and the first control voltage applying terminal, respectively; and first and second diodes connected in parallel with the first and second resistors, respectively, and having cathodes connected to the first control voltage applying terminal. | 07-04-2013 |