Patent application number | Description | Published |
20080283928 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device comprises a first MIS transistor and a second MIS transistor. The first MIS transistor includes a first gate insulating film formed on a first active region, and a first gate electrode formed on the first gate insulating film. The second MIS transistor includes a second gate insulating film formed on a second active region and made of an insulating material different from that of the first gate insulating film, and a second gate electrode formed on the second gate insulating film. Upper regions of the first gate electrode and the second gate electrode are electrically connected to each other on the isolation region located between the first active region and the second active region, and lower regions thereof are separated from each other with a sidewall insulating film made of the same insulating material as that of the first gate insulating film being interposed therebetween. | 11-20-2008 |
20080315318 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes an n-type MIS (Metal Insulator Semiconductor) transistor and a p-type MIS transistor. The n-type MIS transistor includes a first gate insulating film, a first fully silicided (FUSI) gate electrode formed on the first gate insulating film and made of a first metal silicide film, and a first sidewall insulating film. The p-type MIS transistor includes a second gate insulating film, a second fully silicided (FUSI) gate electrode formed on the second gate insulating film and made of a second metal silicide film, and a second sidewall insulating film. A top surface of the first FUSI gate electrode is located lower than a top surface of the second FUSI gate electrode. | 12-25-2008 |
20090085123 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device comprises a first MIS transistor and a second MIS transistor. The first MIS transistor includes a first sidewall formed on a side surface of a first gate electrode, and including a first inner sidewall having an L-shaped cross-section and a first outer sidewall. The second MIS transistor includes a second sidewall formed on a side surface of a second gate electrode, and including a second inner sidewall having an L-shaped cross-section and a second outer sidewall, a trench provided in a region outside the second sidewall in a second active region, and a silicon mixed-crystal layer formed in the trench, for causing first stress in a gate length direction of a channel region in the second active region. A height of an upper end of the second inner sidewall is lower than a height of an upper end of the first inner sidewall. | 04-02-2009 |
20090108379 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR THE SAME - The semiconductor device includes: a transistor having a gate electrode formed on a semiconductor substrate and first and second source/drain regions formed in portions of the semiconductor substrate on both sides of the gate electrode; a gate interconnect formed at a position opposite to the gate electrode with respect to the first source/drain region; and a first silicon-germanium layer formed on the first source/drain region to protrude above the top surface of the semiconductor substrate. The gate interconnect and the first source/drain region are connected via a local interconnect structure that includes the first silicon-germanium layer. | 04-30-2009 |
20090197403 | METHOD FOR FORMING INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for forming an insulating film includes forming a silicon nitride film on a silicon surface by subjecting a target substrate wherein silicon is exposed in the surface to a treatment for nitriding the silicon, forming a silicon oxynitride film by heating the target substrate provided with the silicon nitride film in an N | 08-06-2009 |
20100059827 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A first and second gate electrodes are formed on a first and second active regions, respectively. The first and second gate electrodes have a first and second metal-containing conductive films, respectively. The first and second metal-containing conductive films are formed on the isolation region for segmenting the first and second active regions to be spaced apart from each other. A third metal-containing conductive film, which is a part of each of the first and second gate electrodes, is continuously formed from a top of the first metal-containing conductive film through a top of the isolation region to a top of the second metal-containing conductive film. The third metal-containing conductive film is in contact with the first and second metal-containing conductive films. | 03-11-2010 |
20100072523 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a first MIS transistor and a second MIS transistor. The first MIS transistor includes a first gate electrode includes a second metal film formed on a first gate insulating film, and an insulating film formed, extending over side surfaces of the first gate electrode and upper surfaces of regions located in the first active region laterally outside the first gate electrode. The second MIS transistor includes a second gate electrode including a first metal film formed on a second gate insulating film and a conductive film formed on the first metal film, and the insulating film formed, extending over side surfaces of the second gate electrode and upper surfaces of regions located in the second active region laterally outside the second gate electrode. The first and second metal films are made of different metal materials. | 03-25-2010 |
20100307685 | MICROWAVE PLASMA PROCESSING APPARATUS - In a microwave plasma processing apparatus, when a surface of a planar antenna | 12-09-2010 |
20100323529 | METHOD FOR FORMING INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for forming an insulating film includes a step of preparing a substrate, which is to be processed and has silicon exposed on the surface; a step of performing first nitriding to the silicon exposed on the surface of the substrate, and forming a silicon nitride film having a thickness of 0.2 nm but not more than 1 nm on the surface of the substrate; and a step of performing first heat treatment to the silicon nitride film in N | 12-23-2010 |
20100323531 | METHOD FOR FORMING INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for forming an insulating film includes a step of preparing a substrate, which is to be processed and has silicon exposed on the surface, a step of performing oxidizing to the silicon on the surface, and forming a silicon oxide thin film on the surface of the silicon, a step of performing first nitriding to the silicon oxide film and the base silicon thereof, and forming a silicon oxynitride film, and a step of performing first heat treatment to the silicon oxynitride film in N | 12-23-2010 |
20110124175 | ALTERATION METHOD AND ALTERATION APPARATUS FOR TITANIUM NITRIDE - An alteration method of a titanium nitride film, comprising exposing a titanium nitride film formed on a semiconductor substrate to plasma obtained by exciting a process gas that includes noble gas or nitrogen and excludes oxygen, thereby increasing a specific resistance of the titanium nitride film. | 05-26-2011 |
20110227168 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR THE SAME - The semiconductor device includes: a transistor having a gate electrode formed on a semiconductor substrate and first and second source/drain regions formed in portions of the semiconductor substrate on both sides of the gate electrode; a gate interconnect formed at a position opposite to the gate electrode with respect to the first source/drain region; and a first silicon-germanium layer formed on the first source/drain region to protrude above the top surface of the semiconductor substrate. The gate interconnect and the first source/drain region are connected via a local interconnect structure that includes the first silicon-germanium layer. | 09-22-2011 |